Abstract: An assembly includes a chip including an integrated circuit, a casing including an integrated circuit and having an upper portion formed on a side of the chip and lower portion formed on another side of the chip, plural through-wafer vias (TWVs) for electrically connecting the integrated circuit of the chip and the integrated circuit of the casing, and a card connected to the casing for electrically connecting the casing to a system board.

Abstract: A semiconductor device having a higher thermal dissipation efficiency comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.

Abstract: A stress release thermal interface is provided for preventing the building up of stress between chip and heat sink surfaces in a multi-chip module (MCM) while maintaining reliable thermal and mechanical contact. The interface achieves enhanced thermal conduction by using flexible, interlocking posts attached to the surfaces of the chip and the heat sink.

Abstract: A cooling device has a large number of closely spaced impinging jets, adjacent an impingement gap, with parallel return paths for supplying coolant flow for the impinging jets with the least possible pressure drop using an interdigitated, branched hierarchical manifold. Surface enhancement features spanning the impingement gap form U-shaped microchannels between single impinging jets and single outlets.

Abstract: A flexible, self-contained active multi-phase heat spreader apparatus for cooling electronic components, the heat spreader having fluid sealed between two plates and a pumping mechanism to actuate multi-phase flow of the fluid. Thermal energy from an electronic component in contact with the heat spreader is dissipated from a core region via the working fluid to the entire heat spreader, and then to a heat sink. Surface enhancement features located between the two plates aid transfer of thermal energy from a first metal plate into the fluid.

Abstract: An interface is formed by pressing a patterned first surface and a second surface together, with a particle-loaded interface material in between. The first surface is fabricated with a pattern of channels designed to redistribute the velocity gradients that occur in the interface material during interface formation in order to control the arrangement, orientation and concentration of particles at the end of the interface formation. The concept finds application in thermal interfaces and controlled placement of nano and micro particles and biological molecules.

Abstract: The present invention relates to methods and apparatus for producing an electronic device, such as an organic light-emitting diode (OLED), having an electrode with enhanced injection properties. An example method according to the invention comprises the steps of providing an electrode, depositing a first layer of molecular charge transfer material on the electrode, and cross-linking the molecular charge transfer material. With the method according to the invention, an OLED with higher light efficiency, lower operating voltage, and longer lifetime can be produced. The present invention further relates to an electronic device having an electrode with enhanced injection properties.

Abstract: Provides semiconductor devices and method for fabricating devices having a high thermal dissipation efficiency. An example device comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.

Abstract: The present invention provides a thermal interface with a first and a second face that are in contact to each other by a thermal conducting material. A first face includes grooves that are at least partly filled with the thermal conducting material, wherein at least two types of grooves are arranged, namely first grooves having a larger width than second grooves. The first face comprises an array with protrusions that are confined by the second grooves, the array being divided by the first grooves into sub-arrays.

Abstract: The optical waveguide coupler comprises a structure (1) of a number of elongated narrow optical waveguide strips (2), which consist respectively of a front area (3), a center area (4) and a coupling area (5). The center area (4) has respective transition areas (6) and (7) to the corresponding area (3) or (5). A gap (9) in the front areas (3) provided between two adjoining strips (2) is larger than the thickness of the narrow strips (2). The front faces (8) of the front areas (3), and the front faces of the coupling areas (5) are embodied to be as smooth as possible, wherein all strips form a stack in the coupling area (5). The gaps are pits which result from etching of an Si substrate with the aid of a DRIE etching process.

Abstract: The optical waveguide coupler comprises a structure (1) of a number of elongated narrow optical waveguide strips (2), which consist respectively of a front area (3), a center area (4) and a coupling area (5). The center area (4) has respective transition areas (6) and (7) to the corresponding area (3) or (5). A gap (9) in the front areas (3) provided between two adjoining strips (2) is larger than the thickness of the narrow strips (2). The front faces (8) of the front areas (3), and the front faces of the coupling areas (5) are embodied to be as smooth as possible, wherein all strips form a stack in the coupling area (5). The gaps are pits which result from etching of an Si substrate with the aid of a DRIE etching process.