Patents by Inventor Thomas F. Kuech
Thomas F. Kuech has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10192740Abstract: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 ?m/minute.Type: GrantFiled: September 18, 2017Date of Patent: January 29, 2019Assignees: Alliance for Sustainable Energy, LLC, Wisconsin Alumni Research FoundationInventors: David L. Young, Aaron Joseph Ptak, Thomas F. Kuech, Kevin Schulte, John D. Simon
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Publication number: 20180025902Abstract: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5?m/minute.Type: ApplicationFiled: September 18, 2017Publication date: January 25, 2018Inventors: David L. Young, Aaron Joseph Ptak, Thomas F. Kuech, Kevin Schulte, John D. Simon
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Patent number: 9824890Abstract: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 ?m/minute.Type: GrantFiled: July 16, 2015Date of Patent: November 21, 2017Assignees: Alliance for Sustainable Energy, LLC, Wisconsin Alumni Research FoundationInventors: David L. Young, Aaron Joseph Ptak, Thomas F. Kuech, Kevin Schulte, John D. Simon
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Publication number: 20160138182Abstract: Provided are methods for forming a mixed metal oxide epitaxial film (e.g., ScAlMgO4) comprising growing an amorphous layer of a mixed metal oxide on a substrate (e.g., crystalline sapphire) via atomic layer deposition and annealing the amorphous layer of the mixed metal oxide at an elevated temperature for a period of time sufficient to induce epitaxial solid-state re-growth of the amorphous layer of the mixed metal oxide, thereby forming the mixed metal oxide epitaxial film. The method may further comprise growing a layer of a semiconductor (e.g., GaN) on the mixed metal oxide epitaxial film.Type: ApplicationFiled: November 18, 2014Publication date: May 19, 2016Inventor: Thomas F. Kuech
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Publication number: 20160025927Abstract: Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostucture growth process to provide interlayer interfaces having extremely low roughnesses.Type: ApplicationFiled: July 9, 2015Publication date: January 28, 2016Inventors: Dan Botez, Thomas F. Kuech, Luke J. Mawst, Steven Christopher Ruder
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Patent number: 9244225Abstract: Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostucture growth process to provide interlayer interfaces having extremely low roughnesses.Type: GrantFiled: July 9, 2015Date of Patent: January 26, 2016Assignee: Wisconsin Alumni Research FoundationInventors: Dan Botez, Thomas F. Kuech, Luke J. Mawst, Steven Christopher Ruder
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Publication number: 20150325430Abstract: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 ?m/minute.Type: ApplicationFiled: July 16, 2015Publication date: November 12, 2015Inventors: David L. YOUNG, Aaron Joseph PTAK, Thomas F. KUECH, Kevin SCHULTE, John D. SIMON
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Patent number: 9096948Abstract: Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses.Type: GrantFiled: July 31, 2012Date of Patent: August 4, 2015Assignee: Wisconsin Alumni Research FoundationInventors: Dan Botez, Thomas F. Kuech, Luke J. Mawst, Steven Christopher Ruder
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Patent number: 9064774Abstract: Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., >20 ?m) and relatively thick growth substrates (e.g., >0.5 mm).Type: GrantFiled: May 15, 2013Date of Patent: June 23, 2015Assignee: Wisconsin Alumni Research FoundationInventors: Thomas F. Kuech, Kevin L. Schulte, Luke J. Mawst, Tae Wan Kim, Brian T. Zutter
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Publication number: 20140339505Abstract: Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., >20 ?m) and relatively thick growth substrates (e.g., >0.Type: ApplicationFiled: May 15, 2013Publication date: November 20, 2014Applicant: Wisconsin Alumni Research FoundationInventors: Thomas F. Kuech, Kevin L. Schulte, Luke J. Mawst, Tae Wan Kim, Brian T. Zutter
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Patent number: 8879595Abstract: Semiconductor structures, quantum cascade structures and lasers including the structures are provided. The semiconductor structures include a substrate, a metamorphic buffer layer structure over the substrate, and a quantum cascade structure including a superlattice of quantum wells and barriers over the metamorphic buffer layer structure. The substrate may be GaAs and the quantum cascade structure may be an InGaAs/InAlAs superlattice, including one or more barriers of AlAs.Type: GrantFiled: October 28, 2011Date of Patent: November 4, 2014Assignee: Wisconsin Alumni Research FoundationInventors: Luke J. Mawst, Jeremy D. Kirch, Thomas F. Kuech
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Patent number: 8668370Abstract: Dimpled plates for light distribution and concentration are provided. Also provided are apparatus incorporating the plates as waveguides, and methods for using the dimpled plates for distributing or concentrating input light. The dimpled plates are designed to spatially distribute light from each of one or more near point light sources into a pixelated light projection using an array of reflective conical light deflection elements.Type: GrantFiled: May 3, 2012Date of Patent: March 11, 2014Assignee: Wisconsin Alumni Research FoundationInventors: Leon McCaughan, Thomas F. Kuech, Christopher J. Zenner, Cedric Meyers
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Publication number: 20140037258Abstract: Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses.Type: ApplicationFiled: July 31, 2012Publication date: February 6, 2014Inventors: Dan Botez, Thomas F. Kuech, Luke J. Mawst, Steven Christopher Ruder
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Publication number: 20130309848Abstract: A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 ?m/minute.Type: ApplicationFiled: May 15, 2013Publication date: November 21, 2013Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: David L. YOUNG, Aaron Joseph PTAK, Thomas F. KUECH, Kevin SCHULTE, John D. SIMON
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Publication number: 20130294064Abstract: Dimpled plates for light distribution and concentration are provided. Also provided are apparatus incorporating the plates as waveguides, and methods for using the dimpled plates for distributing or concentrating input light. The dimpled plates are designed to spatially distribute light from each of one or more near point light sources into a pixelated light projection using an array of reflective conical light deflection elements.Type: ApplicationFiled: May 3, 2012Publication date: November 7, 2013Inventors: Leon McCaughan, Thomas F. Kuech, Christopher J. Zenner, Cedric Meyers
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Patent number: 8471294Abstract: GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e.g., SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid.Type: GrantFiled: November 18, 2010Date of Patent: June 25, 2013Assignee: Duke UniversityInventors: Michael A. Garcia, Scott D. Wolter, April S. Brown, Joseph Bonaventura, Thomas F. Kuech
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Publication number: 20130107903Abstract: Semiconductor structures, quantum cascade structures and lasers including the structures are provided. The semiconductor structures include a substrate, a metamorphic buffer layer structure over the substrate, and a quantum cascade structure including a superlattice of quantum wells and barriers over the metamorphic buffer layer structure. The substrate may be GaAs and the quantum cascade structure may be an InGaAs/InAlAs superlattice, including one or more barriers of AlAs.Type: ApplicationFiled: October 28, 2011Publication date: May 2, 2013Inventors: Luke J. Mawst, Jeremy D. Kirch, Thomas F. Kuech
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Patent number: 8369915Abstract: A fiber optic probe having one or more photodetectors bound thereto is provided. By directly integrating thin, flexible photodetectors with an optical fiber, the probes provide a compact structure that increases throughput and decreases cost, making it practical for a clinical use. In some embodiments, the fiber optic probes are small enough for insertion into the shaft of a needle, such as a biopsy needle.Type: GrantFiled: November 6, 2009Date of Patent: February 5, 2013Assignees: Wisconsin Alumni Research Foundation, Duke UniversityInventors: Thomas F. Kuech, Nirmala Ramanujam, Leon McCaughan
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Publication number: 20110112388Abstract: A fiber optic probe having one or more photodetectors bound thereto is provided. By directly integrating thin, flexible photodetectors with an optical fiber, the probes provide a compact structure that increases throughput and decreases cost, making it practical for a clinical use. In some embodiments, the fiber optic probes are small enough for insertion into the shaft of a needle, such as a biopsy needle.Type: ApplicationFiled: November 6, 2009Publication date: May 12, 2011Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATIONInventors: Thomas F. Kuech, Nirmala Ramanujam, Leon McCaughan
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Publication number: 20110097837Abstract: GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e.g., SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid.Type: ApplicationFiled: November 18, 2010Publication date: April 28, 2011Inventors: Michael A. Garcia, Scott D. Wolter, April S. Brown, Joseph Bonaventura, Thomas F. Kuech