Patents by Inventor Thomas F. Kuech
Thomas F. Kuech has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7868354Abstract: GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e.g., SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid.Type: GrantFiled: November 8, 2007Date of Patent: January 11, 2011Assignee: Duke UniversityInventors: Michael A. Garcia, Scott D. Wolter, April S. Brown, Joseph Bonaventura, Thomas F. Kuech
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Patent number: 7865048Abstract: A radiation source or detector including a nested waveguide structure is provided. A smaller waveguide provides wave guiding for radiation of shorter wavelength. The smaller waveguide is embedded within a larger waveguide that provides wave guiding for radiation of longer wavelength. Wavelength conversion between the shorter wavelength and the longer wavelength can be realized through a nonlinear process.Type: GrantFiled: September 10, 2008Date of Patent: January 4, 2011Assignee: Wisconsin Alumni Research FoundationInventors: Leon McCaughan, Chad Staus, Thomas F. Kuech
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Patent number: 7794542Abstract: A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.Type: GrantFiled: February 12, 2008Date of Patent: September 14, 2010Assignee: Cree, Inc.Inventors: Michael A. Tischler, Thomas F. Kuech, Robert P. Vaudo
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Patent number: 7515801Abstract: A THz radiation source comprising a dual waveguide heterostructure is provided. The dual waveguide heterostructure includes an optical waveguide contained within a larger THz waveguide layered structure. The radiation source provides a coherent guided wave of THz radiation which is generated via difference frequency mixing in a gain medium with a large second-order nonlinearity and propagated with low THz loss by a dielectric medium in the layered waveguide structure. The THz radiation source is compact, has a high power output, and may be operated in continuous-wave (CW) mode at room temperature.Type: GrantFiled: December 28, 2006Date of Patent: April 7, 2009Assignee: Wisconsin Alumni Research FoundationInventors: Leon McCaughan, Chad Staus, Thomas F. Kuech
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Publication number: 20090067036Abstract: A radiation source or detector including a nested waveguide structure is provided. A smaller waveguide provides wave guiding for radiation of shorter wavelength. The smaller waveguide is embedded within a larger waveguide that provides wave guiding for radiation of longer wavelength. Wavelength conversion between the shorter wavelength and the longer wavelength can be realized through a nonlinear process.Type: ApplicationFiled: September 10, 2008Publication date: March 12, 2009Inventors: Leon McCaughan, Chad Staus, Thomas F. Kuech
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Publication number: 20080203431Abstract: GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e.g., SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid.Type: ApplicationFiled: November 8, 2007Publication date: August 28, 2008Inventors: Michael A. Garcia, Scott D. Wolter, April S. Brown, Joseph Bonaventura, Thomas F. Kuech
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Publication number: 20080159342Abstract: A THz radiation source comprising a dual waveguide heterostructure is provided. The dual waveguide heterostructure includes an optical waveguide contained within a larger THz waveguide layered structure. The radiation source provides a coherent guided wave of THz radiation which is generated via difference frequency mixing in a gain medium with a large second-order nonlinearity and propagated with low THz loss by a dielectric medium in the layered waveguide structure. The THz radiation source is compact, has a high power output, and may be operated in continuous-wave (CW) mode at room temperature.Type: ApplicationFiled: December 28, 2006Publication date: July 3, 2008Inventors: Leon McCaughan, Chad Staus, Thomas F. Kuech
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Publication number: 20080127884Abstract: A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.Type: ApplicationFiled: February 12, 2008Publication date: June 5, 2008Applicant: CREE, INC.Inventors: Michael A. Tischler, Thomas F. Kuech, Robert P. Vaudo
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Patent number: 7332031Abstract: A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.Type: GrantFiled: October 5, 2005Date of Patent: February 19, 2008Assignee: Cree, Inc.Inventors: Michael A. Tischler, Thomas F. Kuech, Robert P. Vaudo
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Patent number: 7319159Abstract: Silane gas precursor compounds having the formula (I): wherein R1, R2, and R3 each can independently be hydrogen or halogen and wherein the cyclohexadiene ring can have one or more substituents selected from the group consisting of a saturated or unsaturated, straight chain or branched alkyl group, a halogen, NO2, and C?N are disclosed. In one form, the silane gas precursor compound is cyclohexadien-2,4-ylsilane, an air-stable liquid, that can be thermolyzed in a pyrolysis process to efficiently generate high purity silane gas. The compounds of the present invention can thus serve as a “point-of-use” precursor for silane gas.Type: GrantFiled: September 13, 2006Date of Patent: January 15, 2008Assignee: Wisconsin Alumni Research FoundationInventors: Dovas A. Saulys, Thomas F. Kuech, John A. Roberts
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Patent number: 6972051Abstract: A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.Type: GrantFiled: August 14, 2001Date of Patent: December 6, 2005Assignee: Cree, Inc.Inventors: Michael A. Tischler, Thomas F. Kuech, Robert P. Vaudo
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Patent number: 6846428Abstract: Metal oxide films such as lithium niobate are formed in an amorphous state on a substrate such as lithium niobate and can be readily etched by conventional liquid or dry etchants. The amorphous film may then be converted by annealing to a crystalline form well suited to formation of electro-optical devices.Type: GrantFiled: March 14, 2002Date of Patent: January 25, 2005Assignee: Wisconsin Alumni Research FoundationInventors: Leon McCaughan, Thomas F. Kuech, Dovas A. Saulys, Vladimir A. Joshkin, Aref Chowdhury
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Patent number: 6765240Abstract: A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.Type: GrantFiled: August 21, 2001Date of Patent: July 20, 2004Assignee: Cree, Inc.Inventors: Michael A. Tischler, Thomas F. Kuech, Robert P. Vaudo
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Publication number: 20030089950Abstract: Silicon and silicon-germanium semiconductor-on-insulator structures are formed with strong bonds between the silicon or silicon-germanium layer and the underlying insulating substrate with low defects in the semiconductor and minimal flaws in the bonding between the semiconductor layer and the substrate. An oxide layer is initially formed on the semiconductor wafer, and the wafer may then be annealed, if necessary, to drive off water from the oxide layer so that the oxide layer is well below the water saturation of the oxide. The surfaces of the oxide layer and the substrate are then cleaned and placed into contact at relatively low temperatures to effect a strong bond. The semiconductor layer may then be thinned by mechanical or chemical processes, or both, and the completed structure annealed to perfect the bond between the semiconductor layer and the substrate.Type: ApplicationFiled: November 15, 2001Publication date: May 15, 2003Inventors: Thomas F. Kuech, Peter D. Moran
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Patent number: 6545791Abstract: Electro-optic elements are formed in metal oxide films, such as lithium niobate, on a substrate such as lithium niobate for utilization in electro-optical devices. The electro-optic elements include trenches in the lithium niobate selected to improve the performance of the device. Traveling wave modulators may be formed with a waveguide having first and second arms, electrodes over the lithium niobate layer, and trenches formed in the layer to focus the electric field in the waveguide, resulting in improved modulator performance.Type: GrantFiled: March 19, 2002Date of Patent: April 8, 2003Assignee: Wisconsin Alumni Research FoundationInventors: Leon McCaughan, Thomas F. Kuech, Dovas A. Saulys, Vladimir A. Joshkin, Aref Chowdhury, Chad Matthew Staus
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Publication number: 20020182322Abstract: Metal oxide films such as lithium niobate are formed in an amorphous state on a substrate such as lithium niobate and can be readily etched by conventional liquid or dry etchants. The amorphous film may then be converted by annealing to a crystalline form well suited to formation of electro-optical devices.Type: ApplicationFiled: March 14, 2002Publication date: December 5, 2002Inventors: Leon McCaughan, Thomas F. Kuech, Dovas A. Saulys, Vladimir A. Joshkin, Aref Chowdhury
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Publication number: 20020028314Abstract: A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N: depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.Type: ApplicationFiled: August 14, 2001Publication date: March 7, 2002Inventors: Michael A. Tischler, Thomas F. Kuech, Robert P. Vaudo
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Publication number: 20010055660Abstract: A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.Type: ApplicationFiled: August 21, 2001Publication date: December 27, 2001Inventors: Michael A. Tischler, Thomas F. Kuech, Robert P. Vaudo
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Publication number: 20010008656Abstract: A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.Type: ApplicationFiled: October 21, 1997Publication date: July 19, 2001Inventors: MICHAEL A. TISCHLER, THOMAS F. KUECH, ROBERT P. VAUDO
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Patent number: 5679152Abstract: A method of making a single crystal Ga*N article, including the steps of: providing a substrate of crystalline material having a surface which is epitaxially compatible with Ga*N; depositing a layer of single crystal Ga*N over the surface of the substrate; and etchably removing the substrate from the layer of single crystal Ga*N, to yield the layer of single crystal Ga*N as said single crystal Ga*N article. The invention in an article aspect relates to bulk single crystal Ga*N articles, such as are suitable for use as a substrate for the fabrication of microelectronic structures thereon, and to microelectronic devices comprising bulk single crystal Ga*N substrates, and their precursor structures.Type: GrantFiled: January 27, 1994Date of Patent: October 21, 1997Assignee: Advanced Technology Materials, Inc.Inventors: Michael A. Tischler, Thomas F. Kuech