Abstract: A method of forming semi-insulating gallium arsenide by oxygen doping in a metal-organic vapor phase epitaxy system. The metal organic reactant gas containing aluminum and oxygen is introduced into the reaction chamber together with the gallium and arsenic containing reactant gases. A deep level oxygen impurity is incorporated into the growing gallium arsenide layer to form semi-insulating gallium arsenide.

Abstract: This invention is directed to a method of epitaxial growth by metal organic vapor phase epitaxy (MOVPE) of Group III-V compound semiconductors in a hot wall reactor. Epitaxy is accomplished by use of precursors having a metal, an organic ligand, and an inorganic ligand. The system is operated at very low pressures to provide a high throughput of wafers and a highly uniform deposition growth. The invention is further directed to the use of the class of precursors to selectively grow III-V compounds on a masked substrate, wherein growth occurs epitaxially on the exposed areas of the substrate but not on the surrounding mask.

Abstract: The formation of a self-aligned semiconductor structure in a semiconductor substrate is described by providing a first and a second layer or a wave guide of different chemical composition above said semiconductor substrate, said second layer providing a shape defining opening permitting chemical conversion of said first layer adjacent said substrate to a third chemical composition different from said first and second layers. The third chemical composition is removed with a reagent that reacts only with said third composition and not with said first and second layers for the manufacture of self-aligned semiconductor structures. The third chemical composition is retained in the formation of a wave guide and has an index of refraction different from the first layer.

Abstract: An ion implantation annealing source for a controlled excess of the most volatile element of a multielement compound semiconductor whereby the source is provided with interstices and contains the most volatile element of the multielement semiconductor; and process of ion implantation employing the annealing source.

Abstract: Picosecond response photoconductors and photoresponsive elements can be provided that retain high carrier mobility and yet have short lifetime by providing on a crystal mismatched substrate a textured layer of domain regions wherein the domain size is such that the lifetime is proportional to the square of the size divided by the diffusion coefficient of the semiconductor material. The crystalline orientation in the domains with respect to the substrate is maintained. An embodiment is an approximately 0.1 micron thick textured layer of <111> GaAs grown on a <0001> hexagonal monocrystalline Al.sub.2 O.sub.3 having domains approximately 1.0 micron with a carrier lifetime about 5 picoseconds and a carrier mobility of about 80 cm.sup.2 volt.sup.-1 sec.sup.-1.

Abstract: Ion implanted gallium arsenide substrates are annealed by providing an arsenic-containing gaseous ambient on all sides of the substrate, and heating the gallium arsenide substrate with broad area incoherent light.

Abstract: In intermetallic semiconductor crystal growth such as the growth of GaAs and GaAlAs, silicon as a dopant can be introduced more efficiently and evenly when provided as a gaseous hydride based compound involving a molecule where there are joined silicon atoms such as Si.sub.2 H.sub.6 to Si.sub.5 H.sub.12.

Abstract: A method for in situ growth of an array of single crystals from material deposited on an inert substrate is comprised of (1.0) preparing a surface of the substrate with a closely packed array of concavities which stably contain liquid material by the combined effects of surface tension and geometry, (2.0) depositing the material from which the crystals are to be grown on the prepared surface of the substrate to at least partially fill the concavities, (3.0) removing deposited material from the field by evaporation etching after the next step, and (4.0) crystallizing the material remaining in each concavity. The process may be followed by a further step (5.0) of recrystallizing the material to assure a single crystal in each concavity free of any defects, such as defects resulting from etching.