Abstract: In an embodiment, a semiconductor device includes a semiconductor body having a field effect transistor device with an active region and an edge termination region that surrounds the active region on all sides. The active region includes a first serpentine trench in the semiconductor body, a first field plate in the first serpentine trench, a second serpentine trench in the semiconductor body, and a second field plate in the second serpentine trench. The first serpentine trench is separate and laterally spaced apart from the second serpentine trench.

Abstract: In an embodiment, a module includes a first electronic device in a first device region and a second electronic device in a second device region. The first electronic device is operably coupled to the second electronic device to form a circuit. Side faces of the first electronic device and of the second electronic device are embedded in, and in direct contact with, a first epoxy layer.

Abstract: In an embodiment, a semiconductor package includes a first transistor device having first and second opposing surfaces, a first power electrode and a control electrode arranged on the first surface and a second power electrode arranged on the second surface. A first metallization structure arranged on the first surface includes a plurality of outer contact pads which includes a protective layer of solder, Ag or Sn. A second metallization structure is arranged on the second surface. A conductive connection extending from the first surface to the second surface electrically connects the second power electrode to an outer contact pad of the first metallization structure. A first epoxy layer arranged on side faces and on the first surface of the transistor device includes openings which define a lateral size of the plurality of outer contact pads and a package footprint.

Abstract: In various embodiments, a lighting device for a motor vehicle is provided. The lighting device includes at least one light source, and at least one layer of a lacquer embodied such that light may be coupled into the lacquer for achieving a luminous effect. Scattering particles are provided in the lacquer for output coupling of the light.

Abstract: A semiconductor device includes a trench extending into a first main surface of a semiconductor substrate, and a gate electrode and a gate dielectric in the trench. The gate dielectric separates the gate electrode from the semiconductor substrate. A first region having a first conductivity type is formed in the semiconductor substrate at the first surface adjacent the trench. A second region having a second conductivity type is formed in the semiconductor substrate below the first region adjacent the trench. A third region having the first conductivity type is formed in the semiconductor substrate below the second region adjacent the trench. A contact opening in the semiconductor substrate extends into the second region. An electrically insulative spacer is disposed on sidewalls of the semiconductor substrate formed by the contact opening, and an electrically conductive material in the contact opening adjoins the electrically insulative spacer on the sidewalls.

Abstract: In various embodiments, a holding device for lamps in vehicle lights is provided. The holding device may include a plate-like section that is provided with at least one receptacle for a lamp, and socket contacts for the energy supply of the lamp arranged in the receptacle. The at least one receptacle is realized in such a way that it provides space for different types of lamps.

Abstract: Disclosed is a transistor device and a method for producing a transistor device. The transistor device includes: a source region, a drift region, and a body region arranged between the source region and the drift region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. The field electrode includes first and second layers.

Abstract: According to an embodiment of a power semiconductor device, the device includes a semiconductor body coupled to a first load terminal and a second load terminal and configured to conduct a load current between the first load terminal and the second load terminal. A trench extends into the semiconductor body along an extension direction and includes an insulator. A first electrode structure included in the trench is configured to control the load current. A second electrode structure included in the trench is arranged separately and electrically insulated from the first electrode structure. The first electrode structure and the second electrode structure are spatially displaced from each other along the extension direction such that they do not have a common extension range along the extension direction. Each of the first electrode structure and the second electrode structure is made of a metal.

Abstract: A lamp for a headlamp is provided. The lamp includes at least two light source groups each including at least one controllable light source. The light sources of one light source group are set up for emitting yellow light. The light sources of another light source group are set up for emitting at least one of white or blue light. At least the light sources of the at least two light source groups are arranged for producing light that is collectively emittable.

Abstract: Disclosed is a transistor device and a method for producing a transistor device. The transistor device includes: a source region, a drift region, and a body region arranged between the source region and the drift region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. The field electrode includes at least two layers of different electrically conductive materials.

Abstract: In an embodiment, a method includes forming at least one trench in non-device regions of a first surface of a semiconductor wafer, the non-device regions being arranged between component positions, the component positions including device regions and a first metallization structure, applying a first polymer layer to the first surface of a semiconductor wafer such that the trenches and edge regions of the component positions are covered with the first polymer layer and such that at least a portion of the first metallization structure is uncovered by the first polymer layer, removing portions of a second surface of the semiconductor wafer, the second surface opposing the first surface, revealing portions of the first polymer layer in the non-device regions and producing a worked second surface and inserting a separation line through the first polymer layer in the non-device regions to form a plurality of separate semiconductor dies.

Abstract: A method of processing a power semiconductor device includes: providing a semiconductor body with a trench extending into the semiconductor body along an extension direction and including an insulator; providing a monolithic electrode zone within the trench; and removing a section of the monolithic electrode zone within the trench to divide the monolithic electrode zone into at least a first electrode structure and a second electrode structure arranged separately and electrically insulated from each other.

Abstract: A socket for a lamp includes a connection which is prepared for retaining at least one light source, an optical element which is prepared for optical coupling to the light source, and a bearing. The optical element is movably mounted by the bearing for adaptation to a position of a light exit unit of a connectable light source.

Abstract: A lighting module includes a housing, in which a circuit board having at least one lighting means is arranged. The housing has a housing opening, via which radiation from the at least one lighting means can be emitted. A heat sink is provided to dissipate heat from the circuit board. For the thermal relief of the circuit board, an additional circuit board is provided in the housing, which is fitted with electric components for the operation of the lighting module and is arranged at a distance from the circuit board.

Abstract: According to the present disclosure, a method for operating an illumination apparatus is provided. The method has at least two light-emitting devices, which are arranged next to one another separated by a gap and each have a multiplicity of light-emitting elements, by individually driving all light-emitting elements of each light-emitting device, measuring a gap width of the gap and/or a luminance in the gap, and controlling or regulating in each case a luminance of one or more of the light-emitting elements which are arranged directly at the gap in dependence on the gap width and/or on the luminance in the gap.

Abstract: A module may include a housing in which a radiation source is arranged, where the radiation source is configured to emit an excitation radiation by virtue of a conversion element disposed downstream of the radiation source, and the conversion element is configured to convert, at least in part, the excitation radiation. The conversion element may be fastened to a holding section of the housing. The holding section may be encompassed by a positioning element. A receptacle of a component may be adapted to the positioning element. The component may be downstream of the module. The housing may be positionable in the receptacle in order to position the component with respect to an impingement region of the excitation radiation on the conversion element.

Abstract: A method for adjusting a luminous intensity of headlamp light of a vehicle is provided. The vehicle includes at least one headlamp producing the headlamp light. The at least one headlamp includes a plurality of individually controllable light sources which create different partial areas of a light emission pattern of the headlamp light. The method includes obtaining a ground geometry of a ground area which can be illuminated by the headlamp light in the vicinity of the vehicle, calculating an illuminance producible by each of the light sources on the ground area using the obtained ground geometry, comparing the calculated illuminances with respective reference values, and adjusting a luminous intensity of the light sources to achieve the associated reference values of the illuminance.

Abstract: According to the present disclosure, a method for operating an illumination apparatus is provided. The method has at least two light-emitting devices, which are arranged next to one another separated by a gap and each have a multiplicity of light-emitting elements, by individually driving all light-emitting elements of each light-emitting device, measuring a gap width of the gap and/or a luminance in the gap, and controlling or regulating in each case a luminance of one or more of the light-emitting elements which are arranged directly at the gap in dependence on the gap width and/or on the luminance in the gap.

Abstract: A vehicle headlight may include a plurality of selectively activatable light sources configured to emit laterally disjoint light beams, and a lens disposed optically downstream of the light sources and having a light entrance surface and a light exit surface for the light beams. The lens may include a first partial region having a first partial surface of the light entrance surface and a first partial surface of the light exit surface. The lens may further include a second partial region having a second partial surface of the light entrance surface and a second partial surface of the light exit surface. The first partial surface of at least one of the light entrance surface or the light exit surface may have a shape such that the first partial region has a greater divergent effect on light passing through the first partial region than through the second partial region.

Abstract: A module may include a housing in which a radiation source is arranged, where the radiation source is configured to emit an excitation radiation by virtue of a conversion element disposed downstream of the radiation source, and the conversion element is configured to convert, at least in part, the excitation radiation. The conversion element may be fastened to a holding section of the housing. The holding section may be encompassed by a positioning element. A receptacle of a component may be adapted to the positioning element. The component may be downstream of the module. The housing may be positionable in the receptacle in order to position the component with respect to an impingement region of the excitation radiation on the conversion element.