Abstract: A drum cover or protector includes features that allow it to be used with substantially any xerographic device cartridge designed to be used in a xerographic device adapted to handle standard paper sizes. The drum protector may be secured to the cartridge in a protecting position. In this position, the protector covers the drum and blocks objects from coming into contact with the drum surface. The drum protector also includes an arrangement that prevents any critical part of the drum surface from coming into contact with the cover itself.

Abstract: The invention relates to compounds of the general formula wherein Ar1, Ar2, R4, R5, R6, R7, R8, W, X, a and b have the significances given in the specification, and optionally the enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are especially suitable for controlling parasites on warm-blooded animals.

Abstract: The invention relates to compounds of the general formula: (I); wherein R1, R3, R4, R5, R6, R7, Y, a and m have the significances given in claim 1, and optionally the enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are especially suitable for controlling parasites on warm-blooded animals.

Abstract: In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: a) depositing on a first underlayer, a blanket of an aluminum compound containing an electrical short reducing amount of an alloy metal in electrical contact with the underlayer; b) depositing a photoresist and exposing and developing to leave patterns of photoresist on the blanket aluminum compound containing an electrical short reducing amount of an alloy metal; and c) reactive ion etching to obtain an aluminum compound containing an alloy metal line characterized by reduced shorts in amounts less than the aluminum compound without said short reducing amount of alloy metal.

Abstract: The invention relates to compounds of formula I wherein R1, R2, R3, R4, R5, R6, R8, R8?, R9, W, X, A1, A2, a, b and c have the significances given in the specification, and optionally the enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are especially suitable for controlling parasites on warm-blooded animals.

Abstract: The invention relates to compounds of the general formula: (I) and optionally the enantiomers thereof. The active ingredients have advantages pesticidal properties. They are especially suitable for controlling parasites on warm-blooded animals.

Abstract: In a method of planarizing a semiconductor wafer, the improvement comprising polishing above metal interconnect lines to uniformly polish the topography of the wafer to a predetermined endpoint on the wafer sufficiently close above the metal interconnect lines, yet far enough away from the lines to prevent damage to the lines, comprising: a) filling gaps between metal interconnect lines of an inter metal dielectric in a wafer being formed, by depositing HDP fill on top of the metal interconnects, between the metal interconnects, and on the surface of a dielectric layer between the metal interconnects to create an HDP overfill; b) contacting the surface of HDP overfill of the processed semiconductor wafer from step a) with a fixed abrasive polishing pad; and c) relatively moving the wafer and the fixed abrasive polishing pad to affect a polishing rate sufficient to reach a predetermined endpoint and uniformly planar surface on the wafer sufficiently close above the metal interconnect lines and yet far enough a

Abstract: The invention relates to compounds of the general formula in which R1, R2, R3, R4, R5, R6, W, X, A1, A2, a, b and c are as defined in the specification, and to any enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are particularly suitable for controlling parasites in warm-blooded animals.

Abstract: The invention relates to compounds of the general formula (I), in which Ar, R1, R2, R3, R4, R5, R6, R7, R8, W, a, b and n are as defined in claim 1, and to any enantiomers thereof The active ingredients have advantageous pesticidal properties. They are particularly suitable for controlling parasites in warm-blooded animals.

Abstract: The invention relates to compounds of the general formula (I), in which R1, R2, X, Ar1 and Ar2 are as defined in claim 1, and to any enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are particularly suitable for controlling parasites in warm-blooded animals.

Abstract: The invention relates to compounds of the general formula wherein R1, R2, R3, R4, R5, R6, R7, X, Y and a have the significances given in the patent, and optionally the enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are especially suitable for controlling parasites on warm-blooded animals.

Abstract: In a method of planarizing a semiconductor wafer, the improvement comprising polishing above metal interconnect lines to uniformly polish the topography of the wafer to a predetermined endpoint on the wafer sufficiently close above the metal interconnect lines, yet far enough away from the lines to prevent damage to the lines, comprising:

Abstract: The invention relates to compounds of the general formula (I) 1

Abstract: The invention relates to compounds of the general formula 1

Abstract: A method of forming a semiconductor device includes providing a semiconductor device including a conductor formed thereon. A dielectric layer is formed over the conductor and a recess is formed in the dielectric layer by removing a portion of the dielectric layer to expose at least a portion of the conductor. A first layer of aluminum is deposited over the top surface of the dielectric, along the sidewalls of the dielectric layer and over the exposed portion of the conductor without altering the temperature of the semiconductor device. A second layer of aluminum is deposited over the first layer of aluminum at a temperature greater than about 300° C. A third layer of aluminum is deposited over the second layer of aluminum so as to completely fill the recess in the dielectric layer. The third layer of aluminum is slow deposited at a temperature greater than about 300° C.

Abstract: Novel pesticides of formula (I) 1

Abstract: Novel pesticides of formula (I) wherein the substituents, R, R1, R2, R2′, T, U, X and Y are as defined in claim 1, are described. Also described are compositions suitable for use as parasiticides comprising those compounds as active ingredient and to methods of controlling parasites that are based on the administration of those compounds or compositions, and to the use of the said compounds and compositions in a method of controlling parasites and in the manufacture of pesticides for use against parasites. Also described are intermediates of formula (XX) wherein R1, R2, R2′, T, U, X and Y are as defined in claim 1; and Hal is halogen. The latter also exhibit parasiticidal activity and are suitable for the preparation of the compounds of formula (I).

Abstract: In a process for preparing contact layer (CL) contacts for DRAM products filled with aluminum by physical vapor deposition (PVD), the improvements of increasing the process window of wafers per hour per deposition chamber and filling the contact hole without a void to obtain high aspect ratio CL contacts, comprising:

Abstract: Disclosed is a method of ball grid array packaging, comprising the steps of providing a semiconductor die having a metal conductors thereon, covering said metal conductors with an insulative layer, etching through said insulative layer so as to provide one or more openings to said metal conductors, depositing a compliant material layer, etching through said compliant material layer so as to provide one or more openings to said metal conductors, depositing a substantially homogenous conductive layer, patterning said conductive layer so as to bring at least one of said metal conductors in electrical contact with one or more pads, each said pad comprising a portion of said conductive layer disposed upon said compliant material, and providing solder balls disposed upon said pads. Also disclosed is the apparatus made from the method.

Abstract: In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: