Abstract: An integrated circuit comprises a chip including a circuit area surrounded by a peripheral area, the peripheral area extending to an edge of the chip. The integrated circuitry is disposed within the circuit area. No active circuit is disposed within the peripheral area. A barrier is disposed within the peripheral area and surrounds the circuit area. The barrier includes a capacitor structure integrated therein.

Abstract: Compounds of formula (I) are described for deterring vermin, wherein R is unbranched or branched C1-C15 alkyl, which is unsubstituted or substituted by halogen, cyano or nitro; R1 and R2 are unbranched or branched C1-C12 alkyl, preferably C1-C6 alkyl, which is unsubstituted or substituted by halogen, cyano or nitro; and X and Y, independently of one another, are a straightchain or branched alkylene bridge with 1 to 20 carbon atoms, preferably an alkylene bridge with 1 to 3 carbon atoms, which is unsubstituted or substituted by halogen, cyano or nitro. Furthermore, an essentially non-therapeutical process for deterring vermin is described, which is based on the usage of these compounds, as well as verminrepellent compositions containing these compounds as the active ingredient, and finally the use of these compounds for producing vermin-deterring compositions and their usage in deterring vermin from animals, humans and objects. New compounds within the scope of formula (I) are also described.

Abstract: An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.

Abstract: The invention relates to compounds of the general formula wherein either R signifies C1-C6-alkyl, halo-C1-C6-alkyl, C1-C6-alkoxy-C2-C6-alkyl or halo-C1-C6-alkoxy-halo-C2-C6-alkyl; and X1 signifies a single bond, O, S, S(O) or S(O)2; or R signifies halogen and X1 signifies a single bond; X2 signifies CN, halogen, C1-C6-alkyl, halo-C1-C6-alkyl, C1-C6-alkoxy, halo-C1-C6-alkoxy, C1-C6-alkoxycarbonyl, C1-C6-alkylthio, C1-C6-alkylsulfinyl, C1-C6-alkylsulfonyl, C1-C6-alkylsulfonylamino, halo-C1-C6-alkylsulfonylamino, OH, NH2, COOH, CONH2, C1-C6-alkylaminocarbonyl or C1-C6-alkylcarboxamido, whereby if n is greater than 1, X2 may differ from each other; m signifies 1, 2, 3 or 4; and n is 1, 2, 3, 4 or 5, and optionally the enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are especially suitable for controlling parasites on warm-blooded animals.

Abstract: An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.

Abstract: Support structures for semiconductor devices and methods of manufacturing thereof are disclosed. In some embodiments, the support structures include a plurality of support members that is formed in a substantially annular shape beneath a wire bond region. The central region inside the substantially annular shape of the plurality of support members may be used to route functional conductive lines for making electrical contact to active areas of the semiconductor device. Dummy support structures may optionally be formed between the functional conductive lines. The support structures may be formed in one or more conductive line layers and semiconductive material layers of a semiconductor device. In other embodiments, support members are not formed in an annular shape, and are formed in insulating layers that do not comprise low dielectric constant (k) materials.

Abstract: A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

Abstract: The invention relates to compounds of the general formula (I) wherein Ar, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, W, a, b, m, n, o and p are as defined in claim 1, and to any enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are particularly suitable for controlling parasites in warm-blooded animals.

Abstract: Support structures for semiconductor devices and methods of manufacturing thereof are disclosed. In some embodiments, the support structures include a plurality of support members that is formed in a substantially annular shape beneath a wire bond region. The central region inside the substantially annular shape of the plurality of support members may be used to route functional conductive lines for making electrical contact to active areas of the semiconductor device. Dummy support structures may optionally be formed between the functional conductive lines. The support structures may be formed in one or more conductive line layers and semiconductive material layers of a semiconductor device. In other embodiments, support members are not formed in an annular shape, and are formed in insulating layers that do not comprise low dielectric constant (k) materials.

Abstract: A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

Abstract: The invention relates to an arrangement with a medical gamma probe and an optical module arranged on the medical gamma probe, said optical module having a light source which emits light rays during operation and is configured to generate an optical pointer in a detection region of the medial gamma probe using the light rays from the light source.

Abstract: A structure and method of forming passivated copper chip pads is described. In various embodiments, the invention describes a substrate that includes active circuitry and metal levels disposed above the substrate. A passivation layer is disposed above a last level of the metal levels. A conductive liner is disposed in the sidewalls of an opening disposed in the passivation layer, wherein the conductive liner is also disposed over an exposed surface of the last level of the metal levels.

Abstract: The invention relates to compounds of the general formula (I) wherein X, Y and W have the significances given in claim 1 and optionally the enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are especially suitable for controlling parasites in and on warm-blooded animals.

Abstract: The invention relates to a system comprising a medical gamma probe and a control device, which is configured for acquisition of user input for gamma probe operation, and for signal evaluation, including optional signal output in conjunction with measured signals detected by the gamma probe, wherein the medical gamma probe has a probe-side transceiver apparatus and the control device has a control device-side transceiver apparatus, between which transceiver apparatuses a wireless signal transmission connection in the form of a bidirectional radio link is formed.

Abstract: The invention relates to compounds of the general formula (I), wherein R1, R2, R3, R4, R5, R6, R7, R8, R8?, R9, W, a, b and n have the significances given in claim 1, and optionally the enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are especially suitable for controlling parasites on warm-blooded animals.

Abstract: The invention relates to compounds of the general formula (I) wherein X, Y and W have the significances given in claim 1 and optionally the enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are especially suitable for controlling parasites in and on warm-blooded animals.

Abstract: The invention is directed at a new process for the preparation of pure enantiomers from the racemate of amidoacetonitrile compounds of formula wherein R1, R2 and R3, independently of each other, signify hydrogen, halogen, nitro, cyano, C1-C6-alkyl, halogen-C1-C6-alkyl, C1-C6-alkoxy, halogen-C1-C6-alkoxy, C2-C6-alkenyl, halogen-C2-C6-alkenyl, C2-C6-alkinyl, halogen-C2-C6-alkinyl, C2-C6-alkenyloxy, halogen-C2-C6-alkenyloxy, C1-C6-alkylthio, halogen-C1-C6-alkylthio, C1-C6-alkylsulfonyloxy, halogen-C1-C6-alkylsulfonyloxy, C1-C6-alkylsulfinyl, halogen-C1-C6-alkylsulfinyl, C1-C6-alkylsulfonyl, halogen-C1-C6-alkylsulfonyl, C1-C6-alkenylthio, halogen-C1-C6-alkenylthio, C1-C6-alkenylsulfinyl, halogen-C1-C6-alkenylsulfinyl, C1-C6-alkenylsulfonyl, halogen-C1-C6-alkenylsulfonyl, C1-C6-alkylamino, di-(C1-C6-alkyl)amino, C1-C6-alkylaminocarbonyl, di-(C1-C6-alkyl)aminocarbonyl, C1-C6-alkylsulfonylamino, halogen-C1-C6-alkylsulfonylamino, C1-C6-alkylcarbonyl, halogen-C1-C6-alkylcarbonyl, C1-C6-alkoxycarbonyl, unsubstitut

Abstract: The invention relates to compounds of the general formula in which R1, R2, R3, R4, R5, R6, W, X, A1, A2, a, b and c are as defined in the specification, and to any enantiomers thereof. The active ingredients have advantageous pesticidal properties. They are particularly suitable for controlling parasites in warm-blooded animals.

Abstract: The invention relates to compounds of the general formula (I) wherein Ar, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, W, a, b, m, n, o and p are as defined in claim 1, and to any enantiomers thereof. The active ingredients have advantageous pesticidal for controlling parasites in warm-blooded animals.

Abstract: The invention is directed at a new process for the preparation of pure enantiomers from the racemate of amidoacetonitrile compounds of formula wherein R1, R2 and R3, independently of each other, signify hydrogen, halogen, nitro, cyano, C1-C6-alkyl, halogen-C1-C6-alkyl, C1-C6-alkoxy, halogen-C1-C6-alkoxy, C2-C6-alkenyl, halogen-C2-C6-alkenyl, C2-C6-alkinyl, halogen-C2-C6-alkinyl, C2-C6-alkenyloxy, halogen-C2-C6-alkenyloxy, C1-C6-alkylthio, halogen-C1-C6-alkylthio, C1-C6-alkylsulfonyloxy, halogen-C1-C6-alkylsulfonyloxy, C1-C6-alkylsulfinyl, halogen-C1-C6-alkylsulfinyl, C1-C6-alkylsulfonyl, halogen-C1-C6-alkylsulfonyl, C1-C6-alkenylthio, halogen-C1-C6-alkenylthio, C1-C6-alkenylsulfinyl, halogen-C1-C6-alkenylsulfinyl, C1-C6-alkenylsulfonyl, halogen-C1-C6-alkenylsulfonyl, C1-C6-alkylamino, di-(C1-C6-alkyl)amino, C1-C6-alkylaminocarbonyl, di-(C1-C6-alkyl)aminocarbonyl, C1-C6-alkylsulfonylamino, halogen-C1-C6-alkylsulfonylamino, C1-C6-alkylcarbonyl, halogen-C1-C6-alkylcarbonyl, C1-C6-alkoxycarbonyl, unsubstitut