Abstract: The present invention relates to functionalised diene rubbers and their production, to rubber mixtures, comprising these functionalised diene rubbers, and to their use for the production of rubber vulcanisates, which serve in particular for the production of highly reinforced rubber mouldings. Particular preference is given to the use in the production of tyres which have particularly low rolling resistance, and particularly high wet slip resistance and abrasion resistance.

Abstract: The present invention relates to cold flow-reduced polymers having good processing characteristics, these having, at the end of the polymer chain, a silane-containing carboxyl group of the formula (I) where R1, R2 are the same or different and are each an H, alkyl, alkoxy, cycloalkyl, cycloalkoxy, aryl, aryloxy, alkaryl, alkaryloxy, aralkyl or aralkoxy radical which may contain one or more heteroatoms, preferably O, N, S or Si, R3, R4 are the same or different and are each an H, alkyl, cycloalkyl, aryl, alkaryl or aralkyl radical which may contain one or more heteroatoms, preferably O, N, S or Si, A is a divalent organic radical which, as well as C and H, may contain one or more heteroatoms, preferably O, N, S or Si.

Abstract: The present invention relates to and group-functionalized polymers having, at the and of the polymer chain, a sliane-containing carboxyl group of the formula (I) where R1, R2 are the same or different and are each an H, alkyl, alkoxy, cycloalkyl, cycloalkoxy, aryl, aryloxy, alkaryl, alkaryloxy, aralkyl or aralkoxy radical which may contain one or more heteroatoms, preferably O, N, S or Si, R3, R4 are the same or different and are each an H, alkyl, cycloalkyl, aryl, alkaryl or aralkyl radical which may contain one or more heteroatoms, preferably O, N, S or Si, A is a divalent organic radical which, as well as C and H, may contain one or more heteroatoms, preferably O, N, S or Si.

Abstract: The invention relates to a high molecular weight bimodal neodymium-catalysed polybutadiene having a high proportion, >95%, of cis-1,4 units and a low proportion, <1%, of 1,2-vinyl content, wherein the polybutadiene has a linear polymeric main fraction and a long chain branched polymeric fraction, wherein the slope in the RGM relationship is >0.5 for the polymeric main fraction and <0.3 for the long chain branched polymeric fraction.

Abstract: A method for producing a semiconductor component with a semiconductor body includes providing a substrate of a first conductivity type. A buried semiconductor layer of a second conductivity type is provided on the substrate. A functional unit semiconductor layer is provided on the buried semiconductor layer. At least one trench, which reaches into the substrate, is formed in the semiconductor body. An insulating layer is formed, which covers inner walls of the trench and electrically insulates the trench interior from the functional unit semiconductor layer and the buried semiconductor layer, the insulating layer having at least one opening in the region of the trench bottom. The at least one trench is filled with an electrically conductive semiconductor material of the first conductivity type, wherein the electrically conductive semiconductor material forms an electrical contact from a surface of the semiconductor body to the substrate.

Abstract: A transverse link made of fiber-reinforced plastics material for a wheel suspension, which transverse link is pivotable on its bearing elements about a common pivot axis or axes running substantially coaxially with respect to one another, these bearing elements being connected by a single-shell connecting element having connecting arms to a bearing element having a ball and socket joint bearing. The bearing elements and the connecting element are elements of an integral plastics material. In order to produce a transverse link of this type, disclosed is an integral plastics material moulded part produced by extrusion of plastics, the bearing elements having bearing bushes shells surrounded by extrusion of the plastics material. The ball and socket joint bearing have a bearing bush or a shell-shaped sliding capsule, produced from plastics material and connected to the connecting element, the connecting element comprising a centre or transverse web connecting the bearing elements.

Abstract: A method is provided for foaming a ballast bed of a railway track wherein the railway track comprises sleepers positioned on the ballast bed and rails positioned on the sleepers, wherein the rails are covered at least in a partial area along a region of the ballast bed to be foamed, and a foaming agent is introduced into the ballast bed whilst the rails are covered, wherein the ballast bed has in a sleeper bay defined by two successive sleepers an upper side facing against the gravitational direction, and the ballast bed is heaped up so that the upper side of the ballast bed reaches at least up to an underneath side of the sleeper facing in the gravitational direction.

Abstract: The invention relates to methods for achieving a step increase in the Mooney viscosity in production of high-molecular-weight polybutadiene having >95% by weight content of cis-1,4 units and <1% by weight 1,2-vinyl content, characterized in that 1) at least one monomer selected from butadiene and/or isoprene is polymerized at temperatures of from ?20° C. to 150° C. in the presence of at least one inert, organic solvent and in the presence of at least one catalyst based on neodymium carboxylate, 2) the polymerization is then terminated by addition of protic compounds and 3) then sulphur chlorides are added to the polymer, and prior to addition these sulphur chlorides are treated with a carboxylic acid, fatty acid and/or fatty acid ester.

Abstract: The present invention relates to diene polymers or diene copolymers, wherein she diene polymers or diene copolymers have, at the start of the polymer chains, tertiary amino groups of the formula (Ia), (Ib), (IIa) or (IIb) where R1, R2 are the same or different and are each alkyl, cycloalkyl, aryl, alkaryl and aralkyl radicals which may contain heteroatoms such as O, M, S and/or Si, Z is a divalent organic radical which, as well as C and H, may contain heleroatoms such as O, N, S and/or Si, and, at the end of the polymer chains, silane-containing carbinol groups of the formula (III) or metal salts thereof or semimetal salts thereof, where R3, R4, R5, R6 are the same or different and are each an H or alkyl, cycloalkyl, aryl, alkaryl and aralkyl radicals which may contain heteroatoms such as O, N, S and/or Si, A is a divalent organic radical which, as well as C and H, may contain heteroatoms such as O, N, S and/or Si.

Abstract: The present invention relates to diene polymers, wherein the diene polymers have, at the start of the polymer chains, tertiary amino groups of the formula (I) or (II) where R1, R2 are the same or different and are each alkyl, cycloalkyl, aryl, alkaryl and aralkyl radicals which may contain heteroatoms such as O, N, S and/or Si, Z is a divalent organic radical which, as well as C and H, may contain heteroatoms such as O, N, S and/or Si, and, at the end of the polymer chains, silane-containing carbinol groups of the formula (III) or metal salts thereof or semimetal salts thereof, where R3, R4, R5, R6 are the same or different and are each an H or alkyl, cycloalkyl, aryl, alkaryl and aralkyl radicals which may contain heteroatoms such as O, N, S and/or Si, A is a divalent organic radical which, as well as C and H, may contain heteroatoms such as O, N, S and/or Si.

Abstract: A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.

Abstract: A rail vehicle includes an aspirating or induction smoke alarm or detector which is connected by a line to at least one aspiration or induction end piece having a defined opening cross-section for collecting air samples. At least one line piece made of flexible material extends outward from the aspiration or induction end piece in the direction of the aspirating or induction smoke alarm or detector.

Abstract: A semiconductor device includes a semiconductor substrate having a first side and a second side opposite the first side, an active area and a through contact area, the active area including a transistor structure having a control electrode, the through contact area including a semiconductor mesa having insulated sidewalls. The semiconductor device further includes a first metallization on the first side in the active area and a recess extending from the first side into the semiconductor substrate and between the active area and the through contact area and including in the through contact area a horizontally widening portion, the recess being at least partly filled with a conductive material forming a first conductive region in ohmic contact with the semiconductor mesa and the transistor structure. The semiconductor device also includes a control metallization on the second side and in ohmic contact with the semiconductor mesa.

Abstract: The invention relates to an NdBR wet masterbatch comprising -neodymium-catalysed polybutadienes having a high proportion of cis-1,4 units of >95% and a low proportion of 1,2-vinyl content of <1%, with narrow polydispersity of less than 3, with a Mooney viscosity (ML1-4 100° C.) between 30 and 90 MU, with a high linearity index (ratio of solution viscosity to Mooney viscosity) of 3 to 10 m Pas/MU and with a Mooney relaxation after 30 seconds of 2 to 12%, the latter being prepared by means of solution polymerization,—at least one carbon black, the carbon black having an iodine absorption number (ION) between 85 and 210 mg/g, measured to ASTM D1510-1304, and an oil absorption number (OAN) between 75 and 150 ml/100 g, measured to ASTM D2414, and—an oil.

Abstract: The invention relates to a method for producing load transferring regions in a ballast body of a track superstructure by introducing curable liquid plastics or reactive plastic mixtures from a mixing unit by means of at least two distributor pipes with outlets into the load transferring regions and allowing the plastic or the reactive plastic mixture to cure in said load transferring regions. The two distributor pipes with outlets are positioned on the left or on the right from the outside of the rails into the region between the two rails such that the outlets are located adjacent to each other and are laterally spaced from the front face (3) of the tie (2) that has the load transferring region to be reinforced. The two outlets are opened in order to allow the plastic or the reactive plastic mixture to exit at a controlled rate.

Abstract: A semiconductor device includes a semiconductor substrate having a first side and a second side opposite the first side, an active area and a through contact area, the active area including a transistor structure having a control electrode, the through contact area including a semiconductor mesa having insulated sidewalls. The semiconductor device further includes a first metallization on the first side in the active area and a recess extending from the first side into the semiconductor substrate and between the active area and the through contact area and including in the through contact area a horizontally widening portion, the recess being at least partly filled with a conductive material forming a first conductive region in ohmic contact with the semiconductor mesa and the transistor structure. The semiconductor device also includes a control metallization on the second side and in ohmic contact with the semiconductor mesa.

Abstract: Methods for content-aware image compression are disclosed. One method comprises the steps of non-uniformly downscaling an original input image according to a saliency map, creating a residual image, encoding the residual image and downscaled input image, and transmitting the residual image and downscaled input image. The encoded image components are transmitted to a receiver. Downscaling may be performed using an aspect ratio that is automatically calculated from the saliency map. The saliency map may be based on an algorithm specified at an encoder or on regions of interest selected by a plurality of users of receivers that receive the transmitted encoded image components.

Abstract: A transverse link made of fibre-reinforced plastics material for a wheel suspension, which transverse link is pivotable on its bearing elements about a common pivot axis or axes running substantially coaxially with respect to one another, these bearing elements being connected by a single-shell connecting element having connecting arms to a bearing element having a ball and socket joint bearing. The bearing elements and the connecting element are elements of an integral plastics material. In order to produce a transverse link of this type, disclosed is an integral plastics material moulded part produced by extrusion of plastics, the bearing elements having bearing bushes shells surrounded by extrusion of the plastics material. The ball and socket joint bearing have a bearing bush or a shell-shaped sliding capsule, produced from plastics material and connected to the connecting element, the connecting element comprising a centre or transverse web connecting the bearing elements.

Abstract: According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material.

Abstract: A method for producing a semiconductor component with a semiconductor body includes providing a substrate of a first conductivity type. A buried semiconductor layer of a second conductivity type is provided on the substrate. A functional unit semiconductor layer is provided on the buried semiconductor layer. At least one trench, which reaches into the substrate, is formed in the semiconductor body. An insulating layer is formed, which covers inner walls of the trench and electrically insulates the trench interior from the functional unit semiconductor layer and the buried semiconductor layer, the insulating layer having at least one opening in the region of the trench bottom. The at least one trench is filled with an electrically conductive semiconductor material of the first conductivity type, wherein the electrically conductive semiconductor material forms an electrical contact from a surface of the semiconductor body to the substrate.