Abstract: In a plate heat exchanger having a heat exchanger block (1) with a number of heat exchange passages and a header (2) attached to the heat exchanger block, the header providing a flow connection between a portion of the heat exchange passages and a fluid connection (3), the header is defined by a cylinder jacket segment-shaped wall (7) and by a flat surface (12), which runs parallel to the axis of the cylinder (13) on a side (5) of the heat exchanger block. The length of the header extends over at least one portion of a side (5) of the heat exchanger block. At least one wall (7) of the header is connected to the side (5) of the heat exchanger block. The header is designed so that the axis (13) of the cylinder runs inside the header spaced at a distance (11) from the flat surface (12).

Abstract: A plate heat exchanger includes a heat exchanger block having a plurality of heat exchange passages. On the heat exchanger block, a header is mounted that extends over at least one part of one side of the heat exchanger block and establishes a flow connection between part of the heat exchange passages. The plate heat exchanger is provided with a fluid connection, which is formed by the header-side end of a pipeline. The fluid connection is essentially perpendicular to the side of the heat exchanger block over which the header extends. Within the pipeline directly in front of its end, there is a flow guide.

Abstract: Disclosed are systems and methods for dispensing flavor doses and beverages. A beverage tower may be provided that has a small footprint and that is capable of dispensing a wide variety of flavor doses and blended beverages. The beverage tower may include a flow control module that controls the flow rate of beverage additives and water through the beverage tower and a switch module that includes a plurality of switches that may be selectively opened and closed to control the flow of beverage additives and water through the beverage tower to a point of dispense. A flavor dose or blended beverage may be dispensed by the beverage tower in accordance with user input that is provided to the beverage tower via a control panel. The user input may specify a desired beverage additive, a desired cup size, and an indication of whether a flavor shot or a blended beverage is desired.

Abstract: In a method for producing a semiconductor structure a substrate is provided, a dielectric layer comprising at least one metal oxide is formed on the substrate, and a nitrided layer is formed from the dielectric layer. The nitrided layer comprises either at least one metal nitride corresponding to the metal oxide or a metal oxynitride. The nitrided layer is removed selectively with respect to the dielectric layer in a predetermined etching medium.

Abstract: A method for producing a dielectric layer on a substrate made of a conductive substrate material includes reducing a leakage current that flows through defects of the dielectric layer at least by a self-aligning and self-limiting electrochemical conversion of the conductive substrate material into a nonconductive substrate follow-up material in sections of the substrate that are adjacent to the defects. Also provided is a configuration including a dielectric layer with defects, a substrate made of a conductive substrate material, and reinforcement regions made of the nonconductive substrate follow-up material in sections adjacent to the defects.

Abstract: The present invention relates to a method of fabricating a capacitor in a semiconductor substrate. The capacitor is fabricated such that the capacitor comprises: a trench inside a substrate, the trench having a lower region and an upper region, wherein the trench's diameters in the lower region is larger than in the upper region; a first electrode; a dielectric layer on top of the first electrode; a conductive layer on top of the electric layer, the conductive layer forming a second electrode of the capacitor; and a plug forming a closed cavity inside the lower region.

Abstract: A dielectric barrier layer composed of a metal oxide is applied in thin layers with a thickness of less than 20 nanometers in the course of processing semiconductor devices by sequential gas phase deposition or molecular beam epitaxy in molecular individual layers on differently structured base substrates. The method allows, inter alias, effective conductive diffusion barriers to be formed from a dielectric material, an optimization of the layer thickness of the barrier layer, an increase in the temperature budget for subsequent process steps, and a reduction in the effort for removing the temporary barrier layers.

Abstract: Memory and method for fabricating it A memory formed as an integrated circuit in a semiconductor substrate and having storage capacitors and switching transistors. The storage capacitors are formed in the semiconductor substrate in a trench and have an outer electrode layer, which is formed around the trench, a dielectric intermediate layer, which is embodied on the trench wall, and an inner electrode layer, with which the trench is essentially filled, and the switching transistors are formed in the semiconductor substrate in a surface region and have a first source/drain doping region, a second source/drain doping region and an intervening channel, which is separated from a gate electrode by an insulator layer.

Abstract: The invention provides a method for fabricating a memory cell, a substrate (101) being provided, a trench-type depression (102) being etched into the substrate (101), a barrier layer (103) being deposited non-conformally in the trench-type depression (102), grain elements (104) being grown on the inner areas of the trench-type depression (102), a dielectric layer (202) being deposited on the surfaces of the grain elements and the inner areas of the trench-type depression, and a conduction layer being deposited on the dielectric layer, the grain elements (104) growing selectively on the inner areas (105) of the trench-type depression (102) in an electrode region (301) forming a lower region of the trench-type depression (102) and an amorphous silicon layer continuing to grow in a collar region (302) forming an upper region of the trench-type depression (102).

Abstract: The present invention relates to a method for etching a trench in a semiconductor substrate. More specifically, the present invention relates to a method for etching deep trenches such as those having aspect ratios of 30 and higher. According to embodiments of the invention, a method for etching a trench in a semiconductor substrate includes a first etch cycle wherein the trench is etched to a first depth. Thereafter, a protective liner is deposited on at least the upper part of the trench's sidewalls. The protective liner includes inorganic material. During at least one second etch cycle, the trench is etched to its final depth.

Abstract: Charge-trapping regions are arranged beneath lower edges of the gate electrode separate from one another. Source/drain regions are formed in self-aligned manner with respect to the charge-trapping regions by means of a doping process at low energy in order to form shallow junctions laterally extending only a small distance beneath the charge-trapping regions. The self-alignment ensures a large number of program-erase cycles with high effectiveness and good data retention, because the locations of the injections of charge carriers of opposite signs are narrowly and exactly defined.

Abstract: An electrical component, such as a DRAM semiconductor memory or a field-effect transistor is fabricated. At least one capacitor having a dielectric (130) and at least one connection electrode (120, 140) are fabricated. To enable the capacitors fabricated to have optimum storage properties even for very small capacitor structures, the dielectric (130) or the connection electrode (120, 140) are formed in such a manner that transient polarization effects are prevented or at least reduced.

Abstract: A storage capacitor, suitable for use in a DRAM cell, is at least partially formed above a substrate surface and includes: a storage electrode at least partially formed above the substrate surface, a dielectric layer formed adjacent the storage electrode, and a counter electrode formed adjacent the dielectric layer, the counter electrode being isolated from the storage electrode by the dielectric layer, wherein the storage electrode is formed as a body which is delimited by at least one curved surface having a center of curvature outside the body in a plane parallel to the substrate surface. According to another configuration, the storage electrode is formed as a body which is delimited by at least one set having two contiguous planes, the two planes extending perpendicularly with respect to the substrate surface, a point of intersection of normals of the two planes lying outside the body.

Abstract: The invention relates to a method for producing a plate heat exchanger from a plurality of heat exchanger blocks (1a, 1b). Each heat exchanger block (1a, 1b) has mounted on it a header (6a, 7a, 6b, 7b) which extends over at least part of one side of the heat exchanger block (1a, 1b). The heat exchanger blocks (1a, 1b) are arranged next to one another, and the headers (6a, 6b; 7a, 7b) of two adjacent heat exchanger blocks (1a, 1b) are provided on their mutually confronting sides with orifices and are connected to one another in such a way that a flow connection occurs between the two headers (6a, 6b; 7a, 7b).

Abstract: A method for fabricating patterned ceramic layers on areas of a relief structure, wherein the layers may be arranged essentially perpendicular to a top side of a substrate. In exemplary embodiments, a patterned ceramic layer forms an oxide collar for a trench capacitor. The oxide collar is produced by a trench firstly being filled with a resist in its lower section, and an oxide layer subsequently being produced on the uncovered areas of the substrate with the aid of a low temperature ALD method. By means of anisotropic etching, only those portions of the ceramic layer which are arranged at the perpendicular walls of the trench remain. The resist filling may subsequently be removed, for example, by means of an oxygen plasma.

Abstract: A dispensing apparatus for dispensing a lid from a stack of lids each having a lid periphery includes a load platform having a main floor on which to place a stack of lids, the main floor sloping downward from an apex in a rearward direction, the load platform having a forward slope inclined downward from the apex in a forward direction. A parallelogram mechanism is mounted to move in a linear direction forward to a dispense position and rearward to a home position. A hinge is coupled to the parallelogram mechanism and has a handle with a distal end oriented upward and forward to contact an inner surface of a lid periphery of a bottommost lid of the stack of lids when the parallelogram mechanism moves forward from the home position toward the dispense position.

Abstract: Charge-trapping regions are arranged beneath lower edges of the gate electrode separate from one another. Source/drain regions are formed in self-aligned manner with respect to the charge-trapping regions by means of a doping process at low energy in order to form shallow junctions laterally extending only a small distance beneath the charge-trapping regions. The self-alignment ensures a large number of program-erase cycles with high effectiveness and good data retention, because the locations of the injections of charge carriers of opposite signs are narrowly and exactly defined.

Abstract: In a process chamber of a process reactor, a sequential gas phase deposition (ALD, atomic layer deposition) of two or more precursors fed in by means of process gases is controlled. The process chamber is connected to an auxiliary chamber for a change of precursor and so the precursor to be removed is rarefied in the process chamber, so that a process duration of the sequential gas phase deposition that is determined by a change of precursor is reduced.

Abstract: The invention relates to a plate heat exchanger with a heat exchanger block which has a multiplicity of heat exchange passages. The heat exchanger block has mounted on it a header which extends over at least part of one side of the heat exchanger block and makes a flow connection between part of the heat exchange passages. The header is provided with a fluid connection which is arranged essentially perpendicularly to that side of the heat exchanger block over which the header extends. (FIG.

Abstract: A structure on a layer surface of the semiconductor wafer has at least one first area region (8, 9), which is reflective for electromagnetic radiation, and at least one second, essentially nonreflecting area region (10, 11, 12). A light-transmissive insulation layer (13) and a light-sensitive layer are produced on said layer surface. The electromagnetic radiation is directed onto the light-sensitive layer with an angle ? of incidence and the structure of the layer surface is imaged with a lateral offset into the light-sensitive layer.