Abstract: A method for fabricating a semiconductor trench structure includes forming a trench in a semiconductor substrate and filling it with a filler. A first thermal process having a first maximum temperature cures the filler. Removing the filler from an upper region of the trench as far as a boundary surface defines a collar region. In a second thermal process having a second maximum temperature that is not significantly higher than the first maximum temperature, a liner is deposited on the collar region and the boundary surface. The liner is removed from the boundary surface, thereby exposing the filler. The filler is then removed from a lower region of the trench.

Abstract: The invention relates to a bath condenser with a condenser block (1) that has evaporation passages (8) for a liquid and liquefaction passages (2) for a heating medium. The condenser block (1) has at least two circulation sections (7) that are located on top of one another, the evaporation passages (8) each having on the lower end of a circulation section (7) at least one entry opening (9) for the liquid and on the upper end of the circulation section (7) at least one exit opening (10). Only exit openings (10) and entry openings (9) that are located on the same side (12) of the condenser block (1) are connected via means (17, 30) for routing the liquid.

Abstract: An etching signal layer which is formed by a sequential gas phase deposition with a layer thickness of less than 20 nanometers, and which is composed of a metal oxide or of an oxide of rare earths is provided between a substrate, which is located underneath it, and a process layer. The etching signal layer produces an etching signal, which is independent of the stack layer systems that are to be removed, and contains two or more materials that contain silicon, and can be removed quickly and with narrow process tolerances. One substrate surface of the substrate is protected irrespective of the topography. Etching methods based on the etching signal layer can be carried out precisely, and can be used in a variable manner.

Abstract: A dielectric barrier layer composed of a metal oxide is applied in thin layers with a thickness of less than 20 nanometers in the course of processing semiconductor devices by sequential gas phase deposition or molecular beam epitaxy in molecular individual layers on differently structured base substrates. The method allows, inter alias, effective conductive diffusion barriers to be formed from a dielectric material, an optimization of the layer thickness of the barrier layer, an increase in the temperature budget for subsequent process steps, and a reduction in the effort for removing the temporary barrier layers.

Abstract: The novel trench capacitors have a constant or increased capacitance. Materials for a second electrode region and if appropriate a first electrode region include a metallic material, a metal nitride, or the like, and/or a dielectric region is formed with a material with an increased dielectric constant. An insulation region is formed in the upper wall region of the trench after the first electrode region or the second electrode region has been formed, by selective and local oxidation.

Abstract: In a method for forming patterned ceramic layers, a ceramic material is deposited on a substrate and is subsequently densified by heat treatment, for example. In this case, the initially amorphous material is converted into a crystalline or polycrystalline form. In order that the now crystalline material can be removed again from the substrate, imperfections are produced in the ceramic material, for example by ion implantation. As a result, the etching medium can more easily attack the ceramic material, so that the latter can be removed with a higher etching rate. Through inclined implantation, the method can be performed in a self-aligning manner and the ceramic material can be removed on one side, by way of example, in trenches or deep trench capacitors.

Abstract: A trench capacitor has a first capacitor electrode, a second capacitor electrode, and a dielectric, which is arranged between the capacitor electrodes. The first capacitor electrode has a tube-like structure, which extends into a substrate. The second capacitor electrode includes a first section which is opposite to the internal side of the tube-like structure, with the dielectric arranged therebetween, and a second section, which is opposite to the external side of the tube-like structure with the dielectric arranged therebetween.

Abstract: A method for producing a dielectric layer on a substrate made of a conductive substrate material includes reducing a leakage current that flows through defects of the dielectric layer at least by a self-aligning and self-limiting electrochemical conversion of the conductive substrate material into a nonconductive substrate follow-up material in sections of the substrate that are adjacent to the defects. Also provided is a configuration including a dielectric layer with defects, a substrate made of a conductive substrate material, and reinforcement regions made of the nonconductive substrate follow-up material in sections adjacent to the defects.

Abstract: The ALD process chamber has heating radiation sources and the process sequence includes rapid temperature changes on a substrate surface of a substrate arranged in the ALD process chamber. The temperature changes are controlled and the ALD and CVD processes are optimized by in situ temperature steps, for example in order to produce nanolaminates.

Abstract: The invention relates to a bath condenser with a condenser block (1) that has evaporation passages (8) for a liquid and liquefaction passages (2) for a heating medium. The condenser block (1) has at least two circulation sections (7) that are located on top of one another, the evaporation passages (8) each having on the lower end of a circulation section (7) at least one entry opening (9) for the liquid and on the upper end of the circulation section (7) at least one exit opening (10). Only exit openings (10) and entry openings (9) that are located on the same side (12) of the condenser block (1) are connected via means (7, 30) for routing the liquid.

Abstract: The present invention provides a method for fabricating a semiconductor component having a substrate (1) and a dielectric layer (70) provided on or in the substrate (1), the dielectric layer (7) being deposited in alternating self-limiting monolayer form, in the form of at least two different precursors, by means of an ALD process. There is provision for conditioning of the surface of the substrate (1) prior to the deposition of a first monolayer of a first precursor with respect to a reactive ligand of the first precursor.

Abstract: A trench capacitor has a first capacitor electrode, a second capacitor electrode, and a dielectric, which is arranged between the capacitor electrodes. The first capacitor electrode has a tube-like structure, which extends into a substrate. The second capacitor electrode includes a first section which is opposite to the internal side of the tube-like structure, with the dielectric arranged therebetween, and a second section, which is opposite to the external side of the tube-like structure with the dielectric arranged therebetween.

Abstract: In order, with an increased integration density, to be able to provide capacitors for semiconductor circuit configurations with the same or an increased capacitance, first and/or second electrode regions are formed from a metallic material, a metal nitride or the like. In addition or as an alternative, a dielectric region which lies between the electrode regions may be formed using a material with an increased dielectric constant.

Abstract: The novel trench capacitors have a constant or increased capacitance. Materials for a second electrode region and if appropriate a first electrode region include a metallic material, a metal nitride, or the like, and/or a dielectric region is formed with a material with an increased dielectric constant. An insulation region is formed in the upper wall region of the trench after the first electrode region or the second electrode region has been formed, by selective and local oxidation.

Abstract: An etching mask is produced for etching a substrate by a photoresist layer being exposed such that areas which are exposed once are not yet completely exposed and, on the basis of a reflective layer which is located under the photoresist layer, additionally exposed areas are exposed completely. In consequence, a first etching mask which is used for etching a substrate can be renewed by a second etching mask in that a photoresist layer which is applied to the first etching mask or instead of the first etching mask is exposed such that areas which have been exposed once are not yet completely exposed, and areas which have been additionally exposed on the basis of a reflective layer which is located under the photoresist layer and corresponds to the first etching mask are exposed completely.