Abstract: A method is suggested for determining a state of a cell structure, wherein the cell structure includes several memory cells, the method includes: (i) detecting a first condition in a predetermined number of memory cells; and (ii) determining the state of the cell structure by assigning a second condition to the memory cells that do not show the first condition.

Abstract: A method for data processing is suggested including: (i) transforming electrical variables for each cell of a data bit of a memory into a time domain; and (ii) determining a predetermined state by comparing the transformed electrical variables of at least two data bits.

Abstract: An apparatus includes a processing unit and a memory. The processing unit is configured to encode a plurality of bits to obtain a plurality of encoded bits, the processing unit is configured to determine an inversion decision. When the inversion decision indicates that the subset of the encoded bits shall not be inverted, the processing unit is configured to store, as a stored word, bits of the first codeword into the memory. When the inversion decision indicates that the subset of the encoded bits shall be inverted, the processing unit is configured to invert each encoded bit of a subset of the encoded bits to obtain a second codeword and to store the second codeword into the memory.

Abstract: A sense amplifier of a memory cell having a sense voltage generating circuit configured to generate a sense voltage; and a sensing circuit configured to compare a bitline voltage of the memory cell with the sense voltage, and to output a digital output signal indicating a content of the memory cell, wherein during a sense phase, the sensing circuit is decoupled from a voltage supply which charges a bitline capacitance during a precharge phase, and is coupled to and supplied by the bitline capacitance. The sense voltage generating circuit may be further configured to generate a sense voltage that during a precharge phase is dependent on the voltage supply and during a sense phase is independent of the voltage supply.

Abstract: The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In accordance with one aspect of the invention, a method for reading a memory cell includes combining a cell current from a memory cell with a reference current from a reference source to create an average current, enabling the average current to flow through a first mirror transistor in a sense path and a second mirror transistor in a reference path, storing the current mismatch on a capacitor coupled to the gates of the first mirror transistor and the second mirror transistor, disconnecting the memory cell from the reference path and disconnecting the reference source from the sense path, enabling the cell current only to flow through the sense path, and determining the output level of the memory cell.

Abstract: Embodiments relate to system and methods including a plurality of nonvolatile memory elements wherein sets of least two nonvolatile memory elements each share one select element for selecting one of the nonvolatile memory elements of a particular one of the sets of nonvolatile memory elements for a read operation or a program operation.

Abstract: The disclosure relates to systems and methods for performing a word line address scan in a semiconductor memory. More specifically, the disclosure provides a system and method for performing three scans for testing address decoder and word line drive circuits. The first scan determines whether only one word line is selected. The second scan determines whether the word line rise time to a target voltage level is within a specified time. Finally, the third scan determines whether the correct word line was selected. The present disclosure may realize all three scans or a combination of the three scans.

Abstract: An embodiment relates to a method for data processing and comprises determining an electrical variable for each cell of a data bit, transforming each electrical variable into the time domain, and determining a blank state for at least one data bit based on a comparison of the transformed electrical variables.

Abstract: Some embodiments of the present disclosure relate to improved regulators for charge pumps. Such regulators selectively activate a charge pump based not only on the voltage output of the charge pump, but also on an series of wake-up pulses that are delivered at predetermined time intervals and which are delivered independently of the voltage output of the charge pump. Hence, these wake-up pulses prevent extended periods of time in which the charge pump is inactive, thereby helping to prevent latch-up in some situations.

Abstract: A method for data processing is disclosed. A blank state is determined for several data bits based on a majority decision. Each data bit is represented by a group of at least two memory cells. The at least two memory cells of this group are complementary cells of a differential read memory.

Abstract: According to some embodiments, an indication of a suggested improvement to an insurance workflow may be received from a submitter's remote insurance processing terminal. A manager associated with the submitter may be automatically identified, and a message may be transmitted to the identified manager, the message including an identification of the submitter and information about the suggested improvement. Supplemental information associated with the suggested improvement may then be received from the manager and stored at a central workflow improvement platform along with the identification of the submitter and the indication of the suggested improvement. The indication of the suggested improvement and the supplemental information may then be automatically forwarded to one or more members comprising a suggestion review council. According to some embodiments, a potential sponsor for the suggested improvement may also be identified.

Abstract: Some embodiments relate to charge pump regulators to selectively activate a charge pump based not only on the voltage output of the charge pump, but also on a series of wake-up pulses that are delivered at predetermined time intervals and which are delivered independently of the voltage output of the charge pump. Hence, these wake-up pulses prevent extended periods of time in which the charge pump is inactive, thereby helping to prevent latch-up in some situations.

Abstract: An apparatus for comparing pairs of binary words includes an intermediate value determiner and an error detector. The intermediate value determiner determines an intermediate binary word so that the intermediate binary word is equal to a reference binary word for a first pair of equal or inverted binary words, so that the intermediate binary word is equal to the inverted reference binary word for a second pair of equal or inverted binary words and so that the intermediate binary word is unequal to the reference binary word and the inverted reference binary word for a pair of unequal and uninverted binary words, if the intermediate value determiner works faultlessly. Further, the error detector provides an error signal based on the intermediate binary word so that the error signal indicates whether or not the binary words of a pair of binary words are equal or inverted.

Abstract: A memory system having a flexible read reference is disclosed. The system includes a memory partition, a failcount component, and a controller. The memory partition includes a plurality of memory cells. The failcount component is configured to generate failcounts in response to read operations of the memory partition. The controller is configured to calibrate a reference value for the memory partition by utilizing the failcounts.

Abstract: A circuitry for error correction includes a plurality of subcircuits for determining intermediate values Zw0, Zw1, Zw2, Zw3 to be used as coefficients in an error correction expression (z1i, z2i, . . . , zmi)=Zw3·?3ji+Zw2·?2ji+Zw1·?ji+Zw0. The intermediate values Zw0, Zw1, Zw2, Zw3 are determined depending on subsyndromes s1, s3, s5 so that in case of a 1-bit, 2-bit, or 3-bit error zi=(z1i, z2i, . . . , zmi)=(0, 0, . . . , 0) when an error occurred in the bit position i, and zi=(z1i, z2i, . . . , zmi)?(0, 0, . . . , 0) when no error occurred in the bit position i. A correction value ?vi= for the bit position i may then be determined on the basis of the error correction expression evaluated for ?ji.

Abstract: The disclosure relates to an electronic memory system, and more specifically, to a system to emulate an electrically erasable programmable read-only memory, and a method to emulate an electrically erasable programmable read-only memory. According to an embodiment of the disclosure, a system to emulate an electrically erasable programmable read-only memory is provided, the system including a first memory section and a second memory section, wherein the first memory section comprises a plurality of storage locations configured to store data partitioned into a plurality of data segments and wherein the second memory section is configured to store information mapping a physical address of a data segment stored in the first memory section to a logical address of the data segment.

Abstract: A variable focus lens has a housing (1) and an actuator (8) which are mutually displaceable along an optical axis (A) of the lens. A primary membrane (15) is arranged between a first chamber (24, 26) and a second chamber (30, 32), with the first and second chambers being filled with liquids of similar density but different indices of refraction. First and second auxiliary membranes (19, 17) are provided for volume compensation. The first auxiliary membrane (19) forms a wall section of the first chamber (24, 26), and the second auxiliary membrane (17) forms a wall section of the second chamber (30, 32), at least one or both of the auxiliary membranes facing environmental air at its outer side.

Abstract: The press fitting for a tube, particularly for a plastic tube or a plastic/metal compound tube, comprises a fitting body (12) including a support shell (14) for mounting thereon one end of a tube (20) which is to be connected, a press shell (16) which is plastically deformable for pressing against the support shell (14) the end of a tube (20) to be connected that has been mounted on the support shell (14), an abutment element (30) arranged on the press shell (16) and having an abutment face (34) to be abutted by a pressing tool (26) for plastically deforming the press shell (16), and at least one press indication portion (40) projecting from the abutment face (34) of the abutment element (30) and extending externally on the press shell (16) into an acting region (38) within which the pressing tool (26) encloses the press shell (16) during deformation of the press shell (16), the press indication portion (40) being separable from the abutment element (30) by means of the pressing tool (26) during the deformati

Abstract: A circuitry is provided that includes a memory including a plurality of memory cells, wherein at least one of the plurality of memory cells of the memory is configured to take on one of at least three different states. The circuitry also includes a first subcircuit BT configured to generate a plurality of ternary output values based on a sequence of binary values, a second subcircuit LH configured to transform one or more ternary state values into binary auxiliary read values based on the one or more state values, and an encoder configured to generate one or more binary check bits, wherein the encoder is configured to store each of the generated one or more check bits in a different memory cell.

Abstract: A circuitry comprising a syndrome generator configured to generate a syndrome based on a parity check matrix and a binary word comprising a first set of bits and a second set of bits is provided. For the first set of bits an error correction of correctable bit errors within the first set is provided by the parity check matrix and for the second set of bits an error detection of a detectable bit errors within the second set is provided by the parity check matrix.