Abstract: Systems, apparatuses, and methods of and for an ophthalmic illuminated infusion line are provided. An example ophthalmic illuminated infusion line may include an infusion arrangement having a first flexible elongate member and a flow tube. The first flexible elongate member may have a lumen configured to deliver a fluid to an eye of a patient during a surgical procedure. The flow tube may be sized to penetrate the eye of the patient and deliver the fluid to an interior of an eye to maintain intraocular pressure during a surgical procedure. The ophthalmic illuminated infusion line may also include an optical fiber coupled to the infusion arrangement and configured to penetrate the eye of the patient with the flow tube and transmit light to illuminate the interior of the eye during the surgical procedure at the same time that the flow tube delivers the fluid to the interior of the eye.

Abstract: A method is suggested for determining a state of a memory cell via a sense amplifier the method including applying a first signal to the sense amplifier; sensing a first response; determining a reference signal based on the first signal; sensing a second response based on a second signal that is determined based on the first signal; and determining the state of the memory cell based on the second response and the reference signal. Also, a memory device that is able to determine the state of the memory cell is provided.

Abstract: In various embodiments, a method of correcting and/or detecting an error in a memory device is provided. The method may include, in a first operations mode, applying a first code to detect and/or correct an error, and in a second operations mode after an inactive mode and before entering the first operations mode, applying a second code for correcting and/or detecting an error, wherein the first code and the second code have different code words.

Abstract: A method for updating a memory, which comprises several blocks, wherein each of the several blocks comprises multi-level cells and is operable in an MLC-mode or in a SLC-mode, wherein each multi-level cell may store more than one bit, wherein the method includes for each block to be updated: (a) copying the content of the block to a buffer block; (b) erasing the block; (c) writing the content of the block from the buffer block and an updated content for this block to this block, utilizing the capability of the block to be operated in the MLC-mode; (d) copying the updated content of the block to the buffer block; (e) erasing the block; and (f) writing the updated content from the buffer block to the block, utilizing the capability of the block to be operated in the SLC-mode. Also, therefore is a corresponding device.

Abstract: An apparatus for correcting at least one bit error within a coded bit sequence includes an error syndrome generator and a bit error corrector. The error syndrome generator determines the error syndrome of a coded bit sequence derived by a multiplication of a check matrix with a coded bit sequence.

Abstract: In various embodiments, a method of using a memory device is provided. The method may include storing data units, check units of a first code and check units of a second code in memory cells of the memory device, wherein the data units and the check units of the first code form code words of the first code, and wherein the data units and the check units of the second code form code words of the second code, applying the second code for error correction in at least a portion of the data units and/or in at least a portion of the check units of the first code, after the correcting the errors, retaining at least a retaining portion of the data units and of the check units of the first code and deleting at least a deleting portion of the check units of the second code, thereby freeing the memory cells that are occupied by the deleting portion of the check units of the second code, and during a subsequent using of the memory device, storing data in at least a reuse portion of the freed-up memory cells.

Abstract: A method is proposed for storing bits in memory cells of a memory, wherein in two successive write operations first and second wits are written to identical memory cells at an identical address, without the memory cells being erased after the first write operation, wherein first check bits are stored in further first memory cells and second check bits are stored in further second memory cells. A corresponding device is furthermore specified.

Abstract: Overheat and fire detection for aircraft systems includes an optical controller and a fiber optic loop extending from the optical controller. The fiber optic loop extends through one or more zones of the aircraft. An optical signal is transmitted through the fiber optic loop from the optical controller and is also received back at the optical controller. The optical controller analyzes the optical signal to determine the temperature, strain, or both experienced within the zones.

Abstract: A method is suggested for updating a memory comprising a first memory area and a second memory area, the method comprising the steps: (a) using a first image of data that is stored in the first memory area while writing a second image of data to the second memory area; (b) switching to using the second image of data that is stored in the second memory area; (c) writing an inverse image of the second image to the first memory area; and (d) using the first memory area and the second memory area as a differential memory. Also, a corresponding device is provided.

Abstract: A memory device includes a memory with first memory cells and second memory cells, which are different from the first memory cells. In the first memory cells there is stored a first bit sequence and in the second memory cells there is stored a second bit sequence. The memory device includes a memory controller, which is configured to check the first bit sequence with a frequency (x1/T) assigned to the first memory cells. The frequency (x1/T) assigned to the first memory cells depends on an item of reliability information for the first memory cells. The memory controller is configured in the case of an error state to correct an erroneous bit of the first bit sequence and to write back at least the corrected bit into the memory. The second bit sequence is checked less often than the first bit sequence on the basis of an item of reliability information for the second memory cells.

Abstract: A method and a memory controller for accessing a non-volatile memory are disclosed. The method includes reading a first memory region of the non-volatile memory, ascertaining whether the first memory region contains a predetermined data pattern wherein the predetermined data pattern has no influence on resulting error correcting data determined for at least the first memory region. The method evaluating a data status for a second memory region of the non-volatile memory on the basis of a presence of the predetermined data pattern in the first memory region, wherein the data status indicates at least one of whether valid data is present within the second memory region and whether the second memory region is writable.

Abstract: A method for reading memory cells from a memory is stated, inter alia, in which physical values are determined from a number of n memory cells, wherein n is at least three, in which the physical values are at least partially compared with one another, in which K different digital memory cell values are assigned to the n memory cells on the basis of the compared physical values, and in which a code word of an n1-, . . . , nK-out-of-n code is assigned to the digital memory cell values obtained in this manner. In particular, the following apply in this case: n?3, n1?1 to nK?1, K?2 and m?1.

Abstract: A method is suggested for determining a state of a memory cell via a sense amplifier the method including applying a first signal to the sense amplifier; sensing a first response; determining a reference signal based on the first signal; sensing a second response based on a second signal that is determined based on the first signal; and determining the state of the memory cell based on the second response and the reference signal. Also, a memory device that is able to determine the state of the memory cell is provided.

Abstract: A sensor (100) for detecting a state of a fluid within a microfluidic plate (120) is disclosed. The sensor (100) comprises at least a first planar electrode (102) and a second planar electrode (104) arranged parallel to one another so as to form an electric capacitor (106). The first planar electrode (102) and the second planar electrode (104) are configured to generate an electric field (114) within the fluid, wherein the sensor (100) is configured to detect the state of the fluid by means of a capacitance of the electric capacitor (106). Further, a system (116) for controlling a preparation of a sample including a fluid is disclosed. Furthermore, a method for detecting a state of a fluid within a microfluidic plate (120) is disclosed.

Abstract: A computer-implemented method of generating faster and more efficient database query execution plans includes receiving a database query, generating an optimized query execution plan, and initiating execution of the optimized plan. Database can include table columns with associated column dictionaries. Database query can have statements with conditions. Generating the optimized query execution plan involves comparing contents of a column dictionary semantics of the statements, omitting statements which will always be TRUE and omitting conditions which will always be FALSE. Related apparatus, systems, techniques, methods and articles are also described.

Abstract: The disclosure proposes a circuit including a memory which has a multiplicity of memory cells, the memory having a first area and a second area, at least one memory cell comprising a part of the first area and a part of the second area, the first area having a lower reliability than the second area, and the circuit being set up in such a manner that first bits are stored in the first area and second bits are stored in the second area. A circuit for reading the memory and methods for writing to and reading the memory are also disclosed.

Abstract: Overheat and fire detection for aircraft systems includes an optical controller and a fiber optic loop extending from the optical controller. The fiber optic loop extends through one or more zones of the aircraft. An optical signal is transmitted through the fiber optic loop from the optical controller and is also received back at the optical controller. The optical controller analyzes the optical signal to determine the temperature, strain, or both experienced within the zones.

Abstract: Overheat and fire detection for aircraft systems includes an optical controller and a fiber optic loop extending from the optical controller. The fiber optic loop extends through one or more zones of the aircraft. An optical signal is transmitted through the fiber optic loop from the optical controller and is also received back at the optical controller. The optical controller analyzes the optical signal to determine the temperature, strain, or both experienced within the zones.

Abstract: Overheat and fire detection for aircraft systems includes an optical controller and a fiber optic loop extending from the optical controller. The fiber optic loop extends through one or more zones of the aircraft. An optical signal is transmitted through the fiber optic loop from the optical controller and is also received back at the optical controller. The optical controller analyzes the optical signal to determine the temperature, strain, or both experienced within the zones.

Abstract: Overheat and fire detection for aircraft systems includes an optical controller and a fiber optic loop extending from the optical controller. The fiber optic loop extends through one or more zones of the aircraft. An optical signal is transmitted through the fiber optic loop from the optical controller and is also received back at the optical controller. The optical controller analyzes the optical signal to determine the temperature, strain, or both experienced within the zones.