Patents by Inventor Thomas Kuenemund

Thomas Kuenemund has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11652070
    Abstract: According to various embodiments, an integrated circuit is described comprising a plurality of subcircuits having different signal transfer reaction times, a control circuit configured to form two competing paths from the plurality of subcircuits in response to a control signal, an input circuit configured to supply an input signal to the two competing paths and an output circuit configured to generate an output value depending on which of the competing paths has transferred the input signal with shorter reaction time.
    Type: Grant
    Filed: February 24, 2021
    Date of Patent: May 16, 2023
    Assignee: Infineon Technologies AG
    Inventor: Thomas Kuenemund
  • Patent number: 11463074
    Abstract: A storage element that is operable based on a system clock signal, the storage element including a clock gating circuitry configured to generate a gated clock signal based on at least one Boolean signal and the system clock signal or a preprocessed system clock signal, wherein the clock gating circuitry comprises physical connections of small capacitance such that tapping of at least one of the physical connections results in a hold-time violation. Also, a hardware-based cryptography accelerator or a secured processing system including at least one such storage element, and a method for operating at least one storage element.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: October 4, 2022
    Assignee: Infineon Technologies AG
    Inventors: Thomas Kuenemund, Thomas Poeppelmann
  • Patent number: 11437330
    Abstract: A physically obfuscated circuit (POC) circuit including a plurality of subcircuits, each comprising at least one p-channel field effect transistor (FET) and at least one n-channel FET, connected such that the at least one n-channel FET, if supplied with an upper supply potential at its gate, supplies a lower supply potential to the gate of the at least one p-channel FET and the at least one p-channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the at least one n-channel FET.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: September 6, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventor: Thomas Kuenemund
  • Patent number: 11410987
    Abstract: A chip is described including a semiconductor layer including doped regions; a metallization layer on the semiconductor layer and at least one cell row including p-channel field effect transistors and n-channel field effect transistors, wherein the doped regions form source regions and drain regions of the p-channel field effect transistors and the n-channel field effect transistors; contacts extending from the source regions, the drain regions and gate regions of the p-channel field effect transistors and the n-channel field effect transistors to the metallization layer, wherein the metallization layer is structured in accordance with a metallization grid such that the p-channel field effect transistors and the n-channel field effect transistors are connected to form one or more logic gates.
    Type: Grant
    Filed: February 16, 2021
    Date of Patent: August 9, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventor: Thomas Kuenemund
  • Patent number: 11342285
    Abstract: A semiconductor chip may have at least one p-channel field effect transistor (FET), at least one n-channel FET, a first and a second power supply terminal, wherein the at least one n-channel FET, if supplied with the upper supply potential at its gate, supplies the lower supply potential to the gate of the at least one p-channel FET and the at least one p-channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the at least one n-channel FET, a precharge circuit to precharge the circuit to a first state, and a detection circuit configured to output an alarm signal if the circuit enters a second state.
    Type: Grant
    Filed: August 26, 2020
    Date of Patent: May 24, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventor: Thomas Kuenemund
  • Patent number: 11239830
    Abstract: A master-slave D flip-flop is disclosed having gates configured to supply two second intermediate signals as a function of first intermediate signals and a clock signal, and a slave circuit connected to a transfer circuit to form at least one output signal of the flip-flop from the second intermediate signals. The slave circuit is configured, when the second intermediate signals have, after a preceding pair of states, a predetermined pair of states, to maintain the at least one output signal as given by the preceding pair of states. The transfer circuit has a control input and is configured to generate the second intermediate signals to have the predetermined pair of states in response to a predetermined control signal state at the control input.
    Type: Grant
    Filed: March 11, 2021
    Date of Patent: February 1, 2022
    Assignee: Infineon Technologies AG
    Inventors: Thomas Kuenemund, Anton Huber
  • Patent number: 11171647
    Abstract: According to one embodiment, an integrated electronic circuit has a switching network configured to receive binary control states, one or more secret-carrying gates, wherein each secret-carrying gate represents Boolean secrets and is configured to receive binary input states and to output one or more Boolean secrets according to a state sequence of the binary input states, and one or more flip-flops configured to store binary output states output by the switching network and to supply binary input states to the one or more secret-carrying gates based on the stored binary output states. The switching network generates the binary output states by combining the binary control states and Boolean secrets output by the one or more secret-carrying gates. The integrated electronic circuit outputs Boolean secrets from the one or more secret-carrying gates and/or the binary output states from the switching network to another integrated electronic circuit.
    Type: Grant
    Filed: May 14, 2020
    Date of Patent: November 9, 2021
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Thomas Kuenemund, Berndt Gammel, Franz Klug
  • Publication number: 20210288633
    Abstract: A master-slave D flip-flop is disclosed having gates configured to supply two second intermediate signals as a function of first intermediate signals and a clock signal, and a slave circuit connected to a transfer circuit to form at least one output signal of the flip-flop from the second intermediate signals. The slave circuit is configured, when the second intermediate signals have, after a preceding pair of states, a predetermined pair of states, to maintain the at least one output signal as given by the preceding pair of states. The transfer circuit has a control input and is configured to generate the second intermediate signals to have the predetermined pair of states in response to a predetermined control signal state at the control input.
    Type: Application
    Filed: March 11, 2021
    Publication date: September 16, 2021
    Inventors: Thomas Kuenemund, Anton Huber
  • Publication number: 20210280536
    Abstract: According to various embodiments, an integrated circuit is described comprising a plurality of subcircuits having different signal transfer reaction times, a control circuit configured to form two competing paths from the plurality of subcircuits in response to a control signal, an input circuit configured to supply an input signal to the two competing paths and an output circuit configured to generate an output value depending on which of the competing paths has transferred the input signal with shorter reaction time.
    Type: Application
    Filed: February 24, 2021
    Publication date: September 9, 2021
    Inventor: Thomas KUENEMUND
  • Publication number: 20210272916
    Abstract: Various embodiments describe an integrated circuit. The integrated circuit includes at least seven planar field effect transistors provided in a common substrate next to one another with a maximum feature size in accordance with a technology node of a maximum of 65 nm. Each field effect transistor of the at least seven planar field effect transistors includes a first source/drain diffusion region, a second source/drain diffusion region, a channel region between the drain diffusion region and the source diffusion region, and a gate terminal. Each field effect transistor of the at least seven planar field effect transistors includes at least one common source/drain diffusion region with another field effect transistor of the at least seven planar field effect transistors. The common source/drain diffusion regions are free of vertical terminal contact material.
    Type: Application
    Filed: February 1, 2021
    Publication date: September 2, 2021
    Inventors: Thomas KUENEMUND, Markus GRUETZNER, Peter EGGER
  • Publication number: 20210257363
    Abstract: A chip is described including a semiconductor layer including doped regions; a metallization layer on the semiconductor layer and at least one cell row including p-channel field effect transistors and n-channel field effect transistors, wherein the doped regions form source regions and drain regions of the p-channel field effect transistors and the n-channel field effect transistors; contacts extending from the source regions, the drain regions and gate regions of the p-channel field effect transistors and the n-channel field effect transistors to the metallization layer, wherein the metallization layer is structured in accordance with a metallization grid such that the p-channel field effect transistors and the n-channel field effect transistors are connected to form one or more logic gates.
    Type: Application
    Filed: February 16, 2021
    Publication date: August 19, 2021
    Inventor: Thomas KUENEMUND
  • Publication number: 20210143802
    Abstract: A storage element that is operable based on a system clock signal, the storage element including a clock gating circuitry configured to generate a gated clock signal based on at least one Boolean signal and the system clock signal or a preprocessed system clock signal, wherein the clock gating circuitry comprises physical connections of small capacitance such that tapping of at least one of the physical connections results in a hold-time violation. Also, a hardware-based cryptography accelerator or a secured processing system including at least one such storage element, and a method for operating at least one storage element.
    Type: Application
    Filed: October 14, 2020
    Publication date: May 13, 2021
    Inventors: Thomas Kuenemund, Thomas Poeppelmann
  • Publication number: 20210066216
    Abstract: A physically obfuscated circuit (POC) circuit including a plurality of subcircuits, each comprising at least one p-channel field effect transistor (FET) and at least one n-channel FET, connected such that the at least one n-channel FET, if supplied with an upper supply potential at its gate, supplies a lower supply potential to the gate of the at least one p-channel FET and the at least one p-channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the at least one n-channel FET.
    Type: Application
    Filed: August 27, 2020
    Publication date: March 4, 2021
    Inventor: Thomas Kuenemund
  • Publication number: 20210066215
    Abstract: A semiconductor chip may have at least one p-channel field effect transistor (FET), at least one n-channel FET, a first and a second power supply terminal, wherein the at least one n-channel FET, if supplied with the upper supply potential at its gate, supplies the lower supply potential to the gate of the at least one p-channel FET and the at least one p-channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the at least one n-channel FET, a precharge circuit to precharge the circuit to a first state, and a detection circuit configured to output an alarm signal if the circuit enters a second state.
    Type: Application
    Filed: August 26, 2020
    Publication date: March 4, 2021
    Inventor: Thomas Kuenemund
  • Publication number: 20200366291
    Abstract: According to one embodiment, an integrated electronic circuit has a switching network configured to receive binary control states, one or more secret-carrying gates, wherein each secret-carrying gate represents Boolean secrets and is configured to receive binary input states and to output one or more Boolean secrets according to a state sequence of the binary input states, and one or more flip-flops configured to store binary output states output by the switching network and to supply binary input states to the one or more secret-carrying gates based on the stored binary output states. The switching network generates the binary output states by combining the binary control states and Boolean secrets output by the one or more secret-carrying gates. The integrated electronic circuit outputs Boolean secrets from the one or more secret-carrying gates and/or the binary output states from the switching network to another integrated electronic circuit.
    Type: Application
    Filed: May 14, 2020
    Publication date: November 19, 2020
    Inventors: Thomas KUENEMUND, Berndt GAMMEL, Franz KLUG
  • Patent number: 10804216
    Abstract: A chip having a substrate region having a substrate contact, an RS latch having two complementary nodes representing a storage state of the RS latch, a control circuit having a control input and configured to connect one of the complementary nodes to a supply potential depending on a potential at the control input, wherein the control input is connected to the substrate contact, and an output circuit connected to an output of the RS latch and configured to trigger an alarm depending on the storage state of the RS latch.
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: October 13, 2020
    Assignee: Infineon Technologies AG
    Inventors: Thomas Kuenemund, Hans Friedinger
  • Patent number: 10607033
    Abstract: According to one embodiment, a physical uncloneable function circuit for providing a protected output bit is described including at least one physical uncloneable function circuit element configured to output a bit of a physical uncloneable function value, a physical uncloneable function bit output terminal and a coupling circuit connected between the physical uncloneable function circuit element and the physical uncloneable function bit output terminal configured to receive a control signal, supply the bit to the physical uncloneable function bit output terminal for a first state of the control signal and supply the complement of the bit to the physical uncloneable function bit output terminal for a second state of the control signal.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: March 31, 2020
    Assignee: Infineon Technologies AG
    Inventors: Thomas Kuenemund, Berndt Gammel
  • Patent number: 10600742
    Abstract: A chip having a substrate region having a substrate contact, an RS latch having two complementary nodes representing a storage state of the RS latch, a control circuit having a control input and configured to connect one of the complementary nodes to a supply potential depending on a potential at the control input, wherein the control input is connected to the substrate contact, and an output circuit connected to an output of the RS latch and configured to trigger an alarm depending on the storage state of the RS latch.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: March 24, 2020
    Assignee: Infineon Technologies AG
    Inventors: Thomas Kuenemund, Hans Friedinger
  • Patent number: 10483972
    Abstract: A delay circuit includes an electronic transmission element with a first input and a first output. The first input is coupled to the first output by two first switches wired in parallel. The first switches each have a control input, a second input and a second output. The second input is coupled to the second output by two second switches wired in parallel. The circuit further includes an input circuit to receive an input signal and feed the input signal to one of the transmission element inputs and feed the inverted input signal to the other of the transmission element inputs, and an output circuit. The output circuit is configured such that the output signal only changes in the case of a change in the input signal if the change in the input signal has brought about a change both at the first output and at the second output.
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: November 19, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventor: Thomas Kuenemund
  • Publication number: 20190333868
    Abstract: A chip having a substrate region having a substrate contact, an RS latch having two complementary nodes representing a storage state of the RS latch, a control circuit having a control input and configured to connect one of the complementary nodes to a supply potential depending on a potential at the control input, wherein the control input is connected to the substrate contact, and an output circuit connected to an output of the RS latch and configured to trigger an alarm depending on the storage state of the RS latch.
    Type: Application
    Filed: July 12, 2019
    Publication date: October 31, 2019
    Inventors: Thomas Kuenemund, Hans Friedinger