Abstract: An improved method of producing articles by chemical vapor deposition and articles made therefrom. The method comprises machining an appropriate shape on a suitable substrate, positioning an insert within the shape, depositing a support member material on the shape and the insert to produce a support member, separating the support member from the substrate, chemically vapor depositing an article material on the support member and etching away the support member to produce a free standing article, such as a funnel shaped diamond water-jet mixing tube.

Abstract: A method is provided for making substantially transparent polycrystalline diamond film having a thickness greater than 50 microns which can be used in glazing applications and as a heat sink in microelectric applications. A mixture of hydrogen and methane is conveyed into a heated filament reacting zone which is adjacent to an appropriate substrate, such as a molybdenum substrate to produce non-adherent polycrystalline substantially transparent diamond film.

Abstract: The present invention enables the diamond coating of stationary elongate objects, such as twist drills, with a continuous uniform film without any motion of the twist drill due to the unexpected superb "throwing power" of a reactor disclosed herein. The CVD diamond reactor includes a vacuum chamber, inlet for feed hydrogen/hydrocarbon mixtures, and an outlet, in conventional fashion.

Abstract: The present invention is directed to a twist drill which is coated with a layer of CVD diamond and which has slots in its head which are filled with CVD diamond. The invention twist drill is made by forming slots in the head of the twist drill and then subjecting the slotted twist drill to a CVD diamond deposition process for coating said twist drill with a layer of CVD diamond and for filling said slots with CVD diamond. The performance of CVD diamond-coated twist drills does not depend on retaining the diamond film over most of the areas of the drill; but, rather, drill performance is dependent upon retaining a layer of diamond on the cutting edge of the drill. The diamond-filled slots in the head of the twist drill function as wear stops and additional cutting edges as the surrounding drill material is worn away during use.

Abstract: The present invention is directed towards the production of a single crystal semiconductor device mounted in intimate contact with a polycrystalline CVD diamond substrate which allows the high heat conductivity of diamond to keep the device cool. This device is made by a method comprising the steps of placing in a reaction chamber, a single crystal of silicon heated to an elevated CVD diamond-forming temperature. A hydrocarbon/hydrogen gaseous mixture is provided within the chamber and is at least partially decomposed to form a polycrystalline CVD diamond layer on said silicon. During the deposition/growth phase, an intermediate layer of single crystal SiC has been found to form between the single crystal of silicon and the polycrystalline CVD diamond layer. In the next step of the process, the silicon is etched or removed to reveal the single crystal SiC supported by the polycrystalline CVD diamond layer. Finally, a semiconductor layer (e.g.

Abstract: Diamond is deposited by chemical vapor deposition on two parallel substrates, by means of a plurality of filaments between said substrates. The substrates and filaments are in vertical configuration and the filaments are linear and spring-tensioned to compensate for thermal expansion and expansion caused by filament carburization. The apparatus includes at least one and preferably two temperature controlling means, usually heat sinks, to maintain substrate temperature in the range of 900.degree.-1000.degree. C., for optimum rate of diamond deposition.

Abstract: A plural substrate CVD apparatus for diamond crystal production utilizes spaced apart vertical, parallel, planar substrate panels with an electrical (direct current, D.C.) resistance filament heater therebetween. A hydrogen-hydrocarbon gas mixture flows between panels to come into contact with the heater and the panels to cause diamond crystal nucleation and growth on the substrate panels. The apparatus includes means for maintaining the spaced relationship of the heater from the substrate surfaces, comprising a rod member attached to one end of the heater and tensioned by a cable passing over a pulley member and attached to a weight.

Abstract: Diamond is deposited by chemical vapor deposition on two parallel substrates, by means of a plurality of filaments between the substrates. The substrates and filaments are in vertical configuration and the filaments are prestressed to curve in a single plane parallel to the substrates, to allow for thermal expansion and expansion caused by filament carburization. The apparatus includes at least one and preferably two heat sinks to maintain substrate temperatures in the range of 900.degree.-1000.degree. C., for optimum rate of diamond deposition.

Abstract: A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.

Abstract: Self-aligned double grids for vacuum tubes and methods for making such double grids are provided. The self-aligned double grids are especially suitable for improving the efficiency and performance characteristics of high frequency power amplifier tetrode tubes.

Abstract: Three-dimensional diode arrays have been produced in semiconductor wafers by a two-step process involving laser drilling and solid-state diffusion.Holes are first produced in the wafer in various arrays by laser drilling. Under suitable conditions, laser drilling causes little or no damage to the wafer. Cylindrical P-N junctions are then formed around the laser-drilled holes by diffusing an impurity into the wafer from the walls of the hole. A variety of distinctly different ISFET devices is produced.

Abstract: A glass wafer having high aspect ratio holes passing therethrough is provided with metal conductors in the holes as feedthroughs. First, the wafer is processed to line the holes with a thin electron-conducting layer of metal. Next, a layer of the same or different metal is applied over the first metal layer providing the requisite feedthrough electrical conductivity for each hole. Preferably, the glass contains lead oxide, the first metal layer is lead and the next layer is copper.

Abstract: A conductor is provided through a narrow bore hole of a wafer. The hole has a length-to-diameter ratio in excess of six. The conductor is formed by condensation of metal vapor generated at the bottom of said hole by a spark. The spark is generated between a vaporizable metal at the bottom of the hole and a thin electrode disposed above the hole from a conventional automobile coil and battery operating through a mercury switch.

Abstract: Three-dimensional diode arrays have been produced in semiconductor wafers by a two-step process involving laser drilling and solid-state diffusion.Holes are first produced in the wafer in various arrays by laser drilling. Under suitable conditions, laser drilling causes little or no damage to the wafer. Cylindrical P-N junctions are then formed around the laser-drilled holes by diffusing an impurity into the wafer from the walls of the hole. A variety of distinctly different ISFET devices is produced.

Abstract: Three-dimensional diode arrays have been produced in semiconductor wafers by a two-step process involving laser drilling and solid-state diffusion.Holes are first produced in the wafer in various arrays by laser drilling. Under suitable conditions, laser drilling causes little or no damage to the wafer. Cylindrical P-N junctions are then formed around the laser-drilled holes by diffusing an impurity into the wafer from the walls of the hole. A variety of distinctly different ISFET devices is produced.

Abstract: A semiconductor device and a method for its preparation are disclosed, wherein a body of semiconducting material has at least one bore extending completely therethrough, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1, this bore being defined by a region of the semiconducting material in the recrystallized state having therein throughout the region a substantially constant uniform concentration level of atoms of at least one metal selected from the group consisting of aluminum, indium, gallium, antimony, gold, silver and tin in addition to the initial content of the semiconducting material.

Abstract: A method for fabricating junction field-effect transistors includes forming in an N-type silicon substrate a plurality of high-aspect-ratio bores interposed between a source region and a drain region in the substrate, diffusing P-type impurities a predetermined distance into the substrate from the inner surface to each bore to form a concentric, P-type gate zone around each bore, forming electrical contacts to the source and drain regions and to the gate zones and forming a P-type isolation zone surrounding the source and drain regions and the gate zones. The bores, which are preferably formed by laser drilling, extend completely or partially through the thickness of the substrate. The gate zones extend, either completely through the thickness of the substrate or from the top surface of the substrate to a layer-like P-type zone formed adjacent to the bottom surface thereof.

Abstract: A method of growing single crystal layers from polycrystal layers is taught. The method involves forming a eutectic of the polycrystal material and an alloying metal and forming a eutectic bridge between a seed single crystal and the polycrystalline material with the eutectic alloy. The alloy is kept molten and both the single crystal and polycrystal are kept solid at a temperature to induce the eutectic alloy to eat into the polycrystal and to extend the single crystal to form a single crystal layer.

Abstract: A semiconductor device and a method for its preparation are disclosed, wherein a semiconductor body has at least one bore extending completely or partially therethrough, this bore being defined by a semiconducting region having a conductivity type opposite to, and resistivity lower than, the material of the body contiguous to the bore-defining semiconducting region, this bore having a substantially constant diameter of less than about 1.5 mils and an average length-to-diameter ratio of at least about 6:1.

Abstract: In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this invention provides anode and cathode connections generally useful in the practice of electromigration and connections which are especially useful in circumventing the adverse effects of several types of rectifying junctions encountered in the practice of electromigration.