Abstract: Carrier droplets are employed in moving melts of metal-rich semiconductor material through a solid body of semiconductor material by thermal gradient zone melting. One element of the droplet is selected for its ability to penetrate and migrate through the semiconductor material at a reasonable rate. One or more second elements are included in the droplet to impart the desired level of resistivity, conductivity type and/or level of lifetime to the recrystallized semiconductor material or to the material of the body.

Abstract: Titanium, aluminum, lithium, magnesium and calcium are metal wetting agents which are capable of reducing the oxide of a semiconductor material naturally occurring, deposited or grown on a body of the semiconductor material and increasing the solubility of oxygen in gold, silver and tin.

Abstract: Metal wires of widths as small as 10 microns are migrated by thermal gradient zone melting processing as a molten zone through a body of semiconductor material. By calculating the width and thickness of the metal wires deposited on the wafer surface, improved uniform doped regions are produced. The method is restricted to the (100) planar orientation.

Abstract: When a body of semiconductor material is to be processed by thermal gradient zone melting, the outer peripheral side surface of the body is beveled to form an included angle .alpha. with the bottom surface of the body. The measure of the angle .alpha. is such that the radiant heat impinging on the beveled side peripheral surface is equal to the radiant heat emitted by the beveled side peripheral surface of the body.

Abstract: A thin opaque layer of material is deposited on one or both major opposed surfaces of a semiconductor wafer to enhance establishing a thermal gradient near the major surface or surfaces to produce straight, fine molten wires (<0.002") of a metal by migration of a melt of the metal through a solid, or matrix, both of semiconductor material by thermal gradient zone melting processing along a thermal gradient established and maintained aligned substantially parallel with a preferred crystal axis of migration by thermal gradient zone melting processing.

Abstract: A body of semiconductor material to be processed by thermal gradient zone melting (TGZM) has an outer side peripheral surface beveled at a predetermined included angle .alpha. with the bottom surface of the body in order that the radiant heat impinging on the beveled side peripheral surface is equal to the radiant heat emitted by the beveled side peripheral surface of the body.

Abstract: A wafer of semiconductor material processed by thermal gradient zone melting is supported by a beveled inner peripheral surface defining an aperture in a guard ring to minimize the distortion of the thermal gradient at the outer peripheral edge surface of the wafer.

Abstract: Thermal gradient zone melting (TGZM) is employed to make a semiconductor magnetoresistor device embodying a plurality of spaced highly conductive planar metallic-like electrodes formed in situ by TGZM to maximize the increase in the current path in a magnetic field established in the device.

Abstract: A semiconductor neuron comprises a tunnel diode having a region of recrystallized semiconductor material formed in situ in a columnar structure body of semiconductor material by thermal gradient zone melting. Individual electrical leads are affixed to the body and to both opposing faces of the recrystallized region. A voltage pulse applied between one pair of electrical leads on one surface across the P-N junction will propagate at a predetermined rate through the semiconductor body. After a predetermined delay, the applied pulse will appear across the P-N junction thereby mimicking the conducting nerve pulses by a biological nerve cell and its nerve fiber.

Abstract: Uniform initiation and migration of fine liquid wires by thermal gradient zone melting processing through a solid body of semiconductor material is enhanced by a heavily doped region of the body which includes the surface of initiation of the migration.

Abstract: A saturated or a supersaturated solution of the material of a solid body of semiconductor material in a layer of metal to be migrated by thermal gradient zone melting processing is utilized to achieve uniform penetration of fine lines (1 mil in width and less) and small droplets (less than 6 mils in diameter) in order to produce reliable semiconductor devices.

Abstract: Aluminum is employed as a carrier metal for antimony in order to N-type dope semiconductor material by temperature gradient zone melting (TGZM) processing.

Abstract: Straight, fine molten wires (<0.002") of a metal can be migrated through a solid, or matrix, body of semiconductor material by initiation of the migration of the melt and continuing the migration along a thermal gradient established and maintained at from 2.degree. to 10.degree. off the normally preferred crystal axis of migration by the thermal gradient zone melting processing.

Abstract: Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed.

Abstract: The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by a combination of noncentro-symmetric rotation about an axis displaced from the central axis of the body and translation of the solid body while being heated by a suitable heat source.

Abstract: An optical coating is disposed on selected surface areas of a semiconductor element to enchance processing thereof by TGZM

Abstract: An improved method of initiating the moving of a molten zone of an aluminum rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies alloying the aluminum metal to the semiconductor material of the surface of the body in contact therewith at a temperature of from 577.degree. to 660.degree. C. The alloying process enables one to migrate two or more intersecting "wires" simultaneously, as well as three "wires" intersecting at a common point of origin, through the body.

Abstract: A semiconductor body heater is provided with a planar array of radiant heating elements spaced from a reflector. In the preferred embodiment, each radiant heating element comprises a tungsten filament quartz lamp. Each lamp is removable and replaceable without disengaging any other lamp. The reflector is cooled by flows of gas and liquid coolant therethrough. Flows of gas between the planar array of lamps and the reflector and between the reflector and a cover member also cool the apparatus. Various diffusers for substantially eliminating temperature nonuniformities over an area illumined by the planar array of lamps are also disclosed. The semiconductor body heater of the present invention is particularly well suited for use in a temperature gradient zone melting process.

Abstract: A furnace for practising temperature gradient zone melting on one or more semiconductor bodies comprises a closable work chamber for receiving semiconductor bodies for processing, a radiant heat source which forms a first closure member and a heat sink which forms a second closure member, the closure members defining the work chamber and being mutually separable by, for example, a hydraulic actuator to allow access to the interior of the work chamber. A reflector is disposed between the heat source and heat sink in surrounding relationship to the semiconductor bodies being processed to ensure the maintenance of a uniform temperature gradient within the work chamber. The reflector and the heat sink are liquid cooled for the effective removal of heat therefrom. The heat sink is further provided with a plurality of radiation attenuating cavities to enhance the performance of the heat sink.

Abstract: Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed.