Abstract: A glass wafer having high aspect ratio holes passing therethrough is provided with metal conductors in the holes as feedthroughs. First, the wafer is processed to line the holes with a thin electron-conducting layer of metal. Next, a layer of the same or different metal is applied over the first metal layer providing the requisite feedthrough electrical conductivity for each hole. Preferably, the glass contains lead oxide, the first metal layer is lead and the next layer is copper.

Abstract: A semiconductor device for the detection of radiation in general and X-radiation and infrared radiation in particular is provided.

Abstract: Alignment-enhancing electrically conductive feed-through paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a plurality of silicon-on-sapphire bodies arrayed in a stack. The alignment-enhancing feed-throughs are made by a process of this invention involving the drilling of holes through the body, double-sided sputtering, electroplating, and the filling of the holes with solder by capillary action. The alignment-enhancing feed-throughs are activated by forming a stack of wafers and remelting the solder whereupon the wafers, and the feed-through paths, are pulled into alignment by surface tension forces.

Abstract: This invention provides a method for laser drilling small diameter, closely-spaced, and accurately located holes in a body of material which is transparent or substantially transparent to the laser radiation employed whereby the holes are drilled through the thickness of the body from the surface opposite to that on which the laser beam impinges to the surface of laser beam impingement.

Abstract: A fine-scale array of pressure transducers which mimic biological nerve endings and are particularly useful in robotic architecture are provided.

Abstract: Electrically conductive paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a single silicon-on-sapphire body or between integrated circuits of several silicon-on-sapphire bodies. The conductive paths through the silicon-on-sapphire bodies are made by a process involving implantation of a conductive material in laser-drilled holes.

Abstract: A large number of electrically conductive solid, dense feed-through paths for the high-speed low-loss transfer of electrical signals between integrated circuits of a single silicon-on-sapphire body, or between integrated circuits of several silicon-on-sapphire bodies, are provided by an electroforming method utilizing periodic reverse-current pulsing.

Abstract: Alignment-enhancing electrically conductive feed-through paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a plurality of silicon-on-sapphire bodies arrayed in a stack. The alignment-enhancing feed-throughs are made by a process involving the drilling of holes through the body, double-sided sputtering, electroplating, and the filling of the holes with solder by capillary action. The alignment-enhancing feed-throughs are activated by forming a stack of wafers and remelting the solder whereupon the wafers, and the feed-through paths, are pulled into alignment by surface tension forces.

Abstract: In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this invention provides anode and cathode connections generally useful in the practice of electromigration and connections which are especially useful in circumventing the adverse effects of several types of rectifying junctions encountered in the practice of electromigration.

Abstract: Liquid metal inclusions are migrated in a host body of semiconductor material by means of an electrical potential gradient to produce regions of recrystallized single crystal semiconductor material in the host body. The resistivities of the regions and the semiconductor material of the host body will be different and if the conductivity types of the regions and the semiconductor material of the host body are also different, P-N junctions will be formed between the regions and the host body.

Abstract: Electrically conductive solid, dense feed-through paths for the high-speed low-loss transfer of electrical signals between integrated circuits of a single silicon-on-sapphire body, or between integrated circuits of several silicon-on-sapphire bodies, are provided by an electroforming method.

Abstract: A laser beam is scanned over the surface of a structure comprising zirconium alloy in overlapping passes to form a barrier layer of corrosion resistant .beta.-quenched zirconium alloy at the treated surface.

Abstract: A body composed of a zirconium alloy is afforded enhanced corrosion resistance to a high pressure and high temperature steam environment by an integral surface region of .beta.-quenched zirconium formed in situ by laser beam scanning and afforded good mechanical and structural properties by the underlying bulk region whose metallurgical structure is selected to optimize these mechanical properties.

Abstract: A body of sensitized stainless steel is afforded passivity for exposure to a corrosive environment by an integral surface region of normalized stainless shell formed in situ by laser beam scanning.

Abstract: A guard ring for processing a wafer of semiconductor material by thermal gradient zone melting has a beveled internal wall surface for supporting the wafer therein. The thickness of the guard ring is about twice the thickness of the wafer.

Abstract: An apparatus for practicing temperature gradient zone melting simultaneously on a plurality of semiconductor bodies comprises a closable work chamber for receiving the bodies for processing; a heat source disposed in the work chamber and comprising a first closure member thereof; a heat sink disposed in the work chamber and comprising a second closure member thereof and means for transferring one or more bodies of semiconductor material to the work chamber for processing and from the work chamber subsequent to processing. The transferring means comprises manipulative means for selectively engaging the semiconductor bodies and supporting the bodies in transit and drive means for moving the manipulative means toward and away from the work chamber and orienting the manipulative means with respect to the semiconductor bodies.

Abstract: A semiconductor magnetoresistor device embodies a plurality of spaced highly conductive planar metallic-like electrodes formed in situ by thermal gradient zone melting to maximize the increase in the current path in a magnetic field established in the device.

Abstract: An apparatus for practising temperature gradient zone melting simultaneously on a plurality of semiconductor bodies comprises a closable work chamber for receiving the bodies for processing; a heat source disposed in the work chamber and comprising a first closure member thereof; a heat sink disposed in the work chamber and comprising a second closure member thereof and means for transferring one or more bodies of semiconductor material to the work chamber for processing and from the work chamber subsequent to processing. The transferring means comprises manipulative means for selectively engaging the semiconductor bodies and supporting the bodies in transit and drive means for moving the manipulative means toward and away from the work chamber and orienting the manipulative means with respect to the semiconductor bodies.

Abstract: Temperature gradient zone melting is utilized to make a solid state neuron which mimics the conducting nerve pulses by a biological nerve cell and its nerve fiber.

Abstract: A sealant film is employed to migrate species having a high intrinsic vapor pressure through a solid body of semiconductor material by temperature gradient zone melting.