Abstract: A wafer processing tool is capable of detecting wafer warpage. The wafer processing tool includes a wafer holder on which a wafer is held and at least one sensor set. The at least one sensor set is disposed above the wafer or under the wafer, and a projection of each of the at least one sensor set on the wafer radially extending from a center of the wafer to an edge of the wafer. The at least one sensor set is configured to scan an entire surface of the wafer so as to measure warpage of the wafer while the wafer holder and the at least one sensor set are rotatable relative to each other.

Abstract: A method for storage a workpiece used in fabrication of a semiconductor device includes disposing the workpiece on a workpiece carrier, disposing the workpiece carrier with the workpiece in a workpiece container via a workpiece storage system, identifying a content of the workpiece container, and adjusting a storage condition inside the workpiece container in response to the content of the workpiece container via the workpiece storage system.

Abstract: A monitor vehicle for a rail system includes a wheeled trolley, an overhead vehicle, a supporting structure, and a first sensor. The wheeled trolley is above a rail of the rail system, is operable to move over the rail, and has a bottom surface. The overhead vehicle body is suspended by the wheeled trolley and below the rail. The supporting structure connects the wheeled trolley and the overhead vehicle body. The first sensor is on the bottom surface of the wheeled trolley and is configured to detect a first parameter of the rail of the rail system.

Abstract: A fault detection method in a semiconductor fabricating factory is provided. The method includes delivering a test vehicle along a rail to a test region. The method further includes projecting a test signal from a transducer that is positioned on the test vehicle over a check board when the test vehicle is located within the test region. The check board and the test vehicle are arranged along an axis that is parallel to the rail. The method also includes performing an analysis of the test signal projected over the check board. In addition, the method includes issuing a warning alarm when an abnormality is detected based on the analysis result.

Abstract: A monitor vehicle for a rail system includes a wheeled trolley, an overhead vehicle body, at least one supporting structure, and at least one first sensor. The wheeled trolley is operable to move over one or more rails of the rail system. The supporting structure connects the wheeled trolley and overhead vehicle body. The first sensor is on the wheeled trolley and configured to detect at least one first parameter of the one or more rails of the rail system.

Abstract: A method includes receiving a carrier with a plurality of wafers inside; supplying a purge gas to an inlet of the carrier; extracting an exhaust gas from an outlet of the carrier; and generating a health indicator of the carrier while performing the supplying of the purge gas and the extracting of the exhaust gas.

Abstract: A cleaning module adapted for cleaning a load port of a processing apparatus in semiconductor fabrication is provided. The cleaning module includes a housing having at least one opening formed on a bottom wall panel of the housing. The cleaning module further includes a filter unit positioned in the housing. The leaning module also includes a driving assembly. The driving assembly is arranged to correspond to the opening and positioned in the housing. The driving assembly is used to create an air flow from outside of the housing via the opening to the filter unit. The filter unit is used to separate particles or contaminants from the air flow.

Abstract: A monitor vehicle for a rail system includes a wheeled trolley, an overhead vehicle body, at least one supporting structure, and at least one first sensor. The wheeled trolley is operable to move over one or more rails of the rail system. The supporting structure connects the wheeled trolley and overhead vehicle body. The first sensor is on the wheeled trolley and configured to detect at least one first parameter of the one or more rails of the rail system.

Abstract: A bipolar junction transistor (BJT) includes a semiconductor substrate and a first isolation structure. The semiconductor substrate includes a first fin structure disposed in an emitter region, a second fin structure disposed in a base region, and a third fin structure disposed in a collector region. The first, the second, and the third fin structures are elongated in a first direction respectively. The base region is adjacent to the emitter region, and the base region is located between the emitter region and the collector region. The first isolation structure is disposed between the first fin structure and the second fin structure, and a length of the first isolation structure in the first direction is shorter than or equal to 40 nanometers. An effective base width of the BJT may be reduced by the disposition of the first isolation structure, and a current gain of the BJT may be enhanced accordingly.

Abstract: An automated method of unpacking a container containing semiconductor wafers from a sealed bag is provided. The method includes inflating the bag with a gas using an automated gas dispenser. After inflating the bag, the bag is cut using an automated cutting device to expose the container, and the cut bag is removed from around the container.

Abstract: A bipolar junction transistor (BJT) includes a semiconductor substrate and a first isolation structure. The semiconductor substrate includes a first fin structure disposed in an emitter region, a second fin structure disposed in a base region, and a third fin structure disposed in a collector region. The first, the second, and the third fin structures are elongated in a first direction respectively. The base region is adjacent to the emitter region, and the base region is located between the emitter region and the collector region. The first isolation structure is disposed between the first fin structure and the second fin structure, and a length of the first isolation structure in the first direction is shorter than or equal to 40 nanometers. An effective base width of the BJT may be reduced by the disposition of the first isolation structure, and a current gain of the BJT may be enhanced accordingly.

Abstract: In a data management system, a host is configured to send a data access request to a target measurement device among a plurality of measurement devices using a USB dongle. When the USB dongle is unable to receive data from the target measurement device within a predetermined period of time, the host determines that a connection interruption has occurred and releases the connection resource of the USB dongle.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a shallow trench isolation (STI) adjacent to the first fin-shaped structure; and forming a gate structure on the first fin-shaped structure and the STI. Preferably, the gate structure comprises a left portion and the right portion and the work functions in the left portion and the right portion are different.

Abstract: A cleaning module adapted for cleaning a load port of a processing apparatus in semiconductor fabrication is provided. The cleaning module includes a housing having at least one opening formed on a bottom wall panel of the housing. The cleaning module further includes a filter unit positioned in the housing. The leaning module also includes a driving assembly. The driving assembly is arranged to correspond to the opening and positioned in the housing. The driving assembly is used to create an air flow from outside of the housing via the opening to the filter unit. The filter unit is used to separate particles or contaminants from the air flow.

Abstract: A display panel and a method for cutting the same are disclosed. The display panel of the present invention comprises: a first substrate comprising at least a first side, a first edge, and a turning edge connecting the first side and the first edge, wherein the turning edge has a curve shape; and a second substrate disposed opposite to the first substrate and comprising at least a second edge partially overlapped with the first edge, wherein the second substrate is protruded from the turning edge at a region near to the turning edge of the first substrate, wherein a virtual extension line of the first side and the second edge intersect at an intersection point, and a minimum distance between the intersection point and the turning edge is in a range from 0.1 mm to 2.1 mm.

Abstract: Furo[3,2-c]Pyridine and Thieno[3,2-c]pyridine compounds of Formula I, and pharmaceutically acceptable salts thereof, preparation, intermediates, pharmaceutical compositions, and use, such as in disease treatment, including cancers, including conditions in which EMT is involved, including conditions mediated by protein kinase activity such as RON and/or MET.

Abstract: Embodiments of addressing the programming disturb effect are shown. A medium voltage having a magnitude between the programming voltage and ground is applied to a metal bit line among the cells that are subject to the program disturb effect.

Abstract: Furo[3,2-c]Pyridine and Thieno[3,2-c]pyridine compounds of Formula I, and pharmaceutically acceptable salts thereof, preparation, intermediates, pharmaceutical compositions, and use, such as in disease treatment, including cancers, including conditions in which EMT is involved, including conditions mediated by protein kinase activity such as RON and/or MET.

Abstract: A charge pump circuit comprises a first pump stage, including a first sub-pump coupled to a first pre-charge MOSFET transistor, wherein the first sub-pump is used to pump down a gate of the first pre-charge MOSFET transistor to thereby increase the pre-charge efficiency of the first pre-charge MOSFET transistor. The higher efficiency the pre-charge MOSFET is, the lower the gate level of a pass transistor is. Thus, the charge sharing efficiency becomes better, and the body effect will be eliminated. The following pump stage is the same as the first pump stage. In addition, this pre-charging is implemented by PMOSFET only; therefore, only a single well is needed and then a small layout area can be achieved. Consequently, a high efficiency negative pump can be obtained.

Abstract: Embodiments of addressing the programming disturb effect are shown. A medium voltage having a magnitude between the programming voltage and ground is applied to a metal bit line among the cells that are subject to the program disturb effect.