Abstract: A phase change memory, a system, and a method to prevent high resistance drift within a phase change memory through a phase change memory cell with three terminals and self-aligned metal contacts. The phase change memory may include a bottom electrode. The phase change memory may also include a heater proximately connected to the bottom electrode. The phase change memory may also include a phase change material proximately connected to the heater. The phase change memory may also include metal proximately connected to at least two sides of the phase change material. The phase change memory may also include three terminals, where a bottom terminal is located at an area proximately connected to the heater and two top terminals are located at areas proximately connected to the metal.

Abstract: An audio and visual equipment and a method are provided. The audio and visual equipment includes a terminal device including a display. A user interface is displayed by the display. The user interface selectively displays one of a background selection page for selecting a background image, a stack layout selection page for selecting a layout pattern, a presentation selection page for selecting a presentation image, and an object rotation control page for controlling a position of an augmented reality object image. The terminal device provides a control signal according to a selection of the user interface. The terminal device receives a composite image associated with the selection of the user interface. The composite image is displayed by the display. The composite image includes at least one predetermined stacking sequence formed by a person image, the background image, and the at least one of the augmented reality object image and the presentation image.

Abstract: An integrated circuit apparatus includes a substrate and a well contact that is disposed on the substrate. The well contact includes first and second source/drain structures that are disposed on the substrate; a metal vertical portion that contacts the substrate immediately between the first and second source/drain structures; inner spacers that electrically insulate the vertical portion from the adjacent source/drain structures; bottom dielectric isolation that electrically insulates the source/drain structures from the substrate; and a well portion that is embedded into the substrate in registry with the vertical portion. The well portion is doped differently than the substrate.

Abstract: A live broadcasting recording equipment, a live broadcasting recording system and a live broadcasting recording method are provided. The live broadcasting recording equipment includes a camera, a processing device, and a terminal device. The camera captures images to provide photographic data. The processing device executes background removal processing on the photographic data to generate a person image. The terminal device communicates with the processing device and has a display. The processing device executes multi-layer processing to fuse the person image, a three-dimensional virtual reality background image, an augmented reality object image, and a presentation image, and generate a composite image. After an application gateway of the processing device recognizes a login operation of the terminal device, the processing device outputs the composite image to the terminal device, so that the display of the terminal device displays the composite image.

Abstract: An embodiment of the invention may include a Vertical Field Effect Transistor (VFET) structure, and method of making that structure, having a first VFET and a second VFET. The first VFET may include a single liner between a first source/drain epi and a contact. The second VFET may include two liners between a second source/drain epi and a contact. This may enable proper contact liner matching for differing VFET devices.

Abstract: A semiconductor device including a semiconductor substrate, a lower metal contact disposed upon the semiconductor substrate, a gate structure disposed upon the lower metal contact, an upper metal contact disposed upon the gate structure, and a plurality of semiconductor carriers disposed in contact with both the lower metal contact and the upper metal contact, the plurality of semiconductor carriers disposed in channels passing through the gate structure.

Abstract: A multi-resource editing system and a multi-resource editing method are disclosed. The multi-resource editing system comprises an editor, a user interface and a broadcasting and recording apparatus, wherein the editor comprises an image editing module. The user interface electrically connects the image editing module, wherein the user interface comprises a plurality of windows. The user interface generates at least one editing signal, the at least one editing signal is generated according to an operation result of the user interface, and the image editing module generates at least one editing instruction according to the at least one editing signal and generates a synthetic image scenario according to the at least one editing signal. The image editing module outputs the synthetic image scenario to the broadcasting and recording apparatus such that the broadcasting and recording apparatus generates a broadcast synthetic image according to a recorded image and the synthetic image scenario.

Abstract: A plurality of bit lines corresponding to elements of an input vector intersect a plurality of word lines and a plurality of memristive cells are located at the intersections. At least three cells are grouped together to represent a single matrix element. At least three word lines correspond to each element of an output vector. An A/D converter is coupled to each of the word lines, and for each line, except a first, in each group, a shifter has an input coupled to one of the A/D converters. For each group, an addition-subtraction block adds the output of the A/D converter coupled to the first one of the word lines to outputs of each of the shifters except that for a last one of the word lines, subtracts the output of the last shifter, and outputs a corresponding element of an output vector.

Abstract: A phase change memory, a system, and a method to prevent high resistance drift within a phase change memory through a phase change memory cell with three terminals and self-aligned metal contacts. The phase change memory may include a bottom electrode. The phase change memory may also include a heater proximately connected to the bottom electrode. The phase change memory may also include a phase change material proximately connected to the heater. The phase change memory may also include metal proximately connected to at least two sides of the phase change material. The phase change memory may also include three terminals, where a bottom terminal is located at an area proximately connected to the heater and two top terminals are located at areas proximately connected to the metal.

Abstract: A live broadcasting recording equipment, a live broadcasting recording system and a live broadcasting recording method are provided. The live broadcasting recording equipment includes a camera, a processing device, and a terminal device. The camera captures images to provide photographic data. The processing device executes background removal processing on the photographic data to generate a person image. The terminal device communicates with the processing device and has a display. The processing device executes multi-layer processing to fuse the person image, a three-dimensional virtual reality background image, an augmented reality object image, and a presentation image, and generate a composite image. After an application gateway of the processing device recognizes a login operation of the terminal device, the processing device outputs the composite image to the terminal device, so that the display of the terminal device displays the composite image.

Abstract: A fraud risk determination system that provides a comprehensive approach to multiple different types of fraud that outputs a single identity fraud risk score based on dynamically combining several independent fraud component models which employ various analytical techniques.

Abstract: The inventive concepts herein relate to performing block retrieval on a block to be processed of a urine sediment image. The method comprises: using a plurality of decision trees to perform block retrieval on the block to be processed, wherein each of the plurality of decision trees comprises a judgment node and a leaf node, and the judgment node judges the block to be processed to make it reach the leaf node by using a block retrieval feature in a block retrieval feature set to form a block retrieval result at the leaf node, and at least two decision trees in the plurality of decision trees are different in structures thereof and/or judgments performed by the judgment nodes thereof by using the block retrieval feature; and integrating the block retrieval results of the plurality of decision trees so as to form a final block retrieval result.

Abstract: A method is presented for improved linearity of a phase change memory (PCM) cell structure. The method includes forming a bottom electrode over a substrate, constructing a PCM stack including a plurality of PCM layers each having a different crystallization temperature over the bottom electrode, and forming a top electrode over the PCM stack. The crystallization temperature varies in an ascending order from the bottom electrode to the top electrode.

Abstract: An embodiment of the invention may include a Vertical Field Effect Transistor (VFET) structure, and method of making that structure, having a first VFET and a second VFET. The first VFET may include a single liner between a first source/drain epi and a contact. The second VFET may include two liners between a second source/drain epi and a contact. This may enable proper contact liner matching for differing VFET devices.

Abstract: A phase change material switch includes a phase change layer disposed on a metal liner. A gate dielectric layer is disposed on the phase change layer. A metal gate liner is disposed on the gate dielectric layer.

Abstract: A phase change material switch includes a phase change layer disposed on a metal liner. A gate dielectric layer is disposed on the phase change layer. A metal gate liner is disposed on the gate dielectric layer.

Abstract: An eFuse structure including a semiconductor substrate; back end of the line (BEOL) metallization levels on the semiconductor substrate; vias extending through the metallization levels; at least one of the metallization levels including one or more metallic plates in electrical contact with one of the vias, the one or more metallic plates having at least one fusible link in electrical contact with one or more additional vias. The eFuse structure may form a multi-fuse structure such that each fusible link may be fused separately or together at the same time.

Abstract: A method is presented for improved linearity of a phase change memory (PCM) cell structure. The method includes forming a bottom electrode over a substrate, constructing a PCM stack including a plurality of PCM layers each having a different crystallization temperature over the bottom electrode, and forming a top electrode over the PCM stack. The crystallization temperature varies in an ascending order from the bottom electrode to the top electrode.