Abstract: A method is presented for improved linearity of a phase change memory (PCM) cell structure. The method includes forming a bottom electrode over a substrate, constructing a PCM stack including a plurality of PCM layers each having a different crystallization temperature over the bottom electrode, and forming a top electrode over the PCM stack. The crystallization temperature varies in an ascending order from the bottom electrode to the top electrode.

Abstract: An eFuse structure including a semiconductor substrate; back end of the line (BEOL) metallization levels on the semiconductor substrate; vias extending through the metallization levels; at least one of the metallization levels including one or more metallic plates in electrical contact with one of the vias, the one or more metallic plates having at least one fusible link in electrical contact with one or more additional vias. The eFuse structure may form a multi-fuse structure such that each fusible link may be fused separately or together at the same time.

Abstract: The inventive concepts herein relate to performing block retrieval on a block to be processed of a urine sediment image. The method comprises: using a plurality of decision trees to perform block retrieval on the block to be processed, wherein each of the plurality of decision trees comprises a judgment node and a leaf node, and the judgment node judges the block to be processed to make it reach the leaf node by using a block retrieval feature in a block retrieval feature set to form a block retrieval result at the leaf node, and at least two decision trees in the plurality of decision trees are different in structures thereof and/or judgments performed by the judgment nodes thereof by using the block retrieval feature; and integrating the block retrieval results of the plurality of decision trees so as to form a final block retrieval result.

Abstract: The inventive concepts herein relate to performing block retrieval on a block to be processed of a urine sediment image. The method comprises: using a plurality of decision trees to perform block retrieval on the block to be processed, wherein each of the plurality of decision trees comprises a judgment node and a leaf node, and the judgment node judges the block to be processed to make it reach the leaf node by using a block retrieval feature in a block retrieval feature set to form a block retrieval result at the leaf node, and at least two decision trees in the plurality of decision trees are different in structures thereof and/or judgments performed by the judgment nodes thereof by using the block retrieval feature; and integrating the block retrieval results of the plurality of decision trees so as to form a final block retrieval result.

Abstract: A virtual reality goggle includes a goggle shaped body having multiple cameras mounted thereon. A display is supported by the goggle shaped body. A support extends between sides of the goggle shaped body and includes multiple cameras. Circuitry is coupled to receive video from the multiple cameras, the video comprising a composite field of view of approximately 360 degrees about the goggle, the circuitry to couple to a wireless communication device to transmit the received video to networked processing services, and to receive stitched stereoscopic three dimensional virtual reality video from the networked processing services, the circuitry further coupled to provide the received stitched stereoscopic three dimensional virtual reality video for display.

Abstract: One illustrative method disclosed herein includes forming a first transistor for an inverter and forming asymmetrically spaced first and second conductive contact structures that are conductively coupled to the source region and the drain region, respectively, of the transistor. In this example, the first conductive contact structure (for the source region) is positioned a first predetermined target distance from a first side of the gate structure of the transistor, and the second conductive contact structure (for the drain region) is positioned a second predetermined target distance from a second side of the gate structure, wherein the second predetermined target distance is less than the first predetermined target distance.

Abstract: An apparatus for enqueuing kernels on a device-side is introduced to incorporate with at least a MXU (Memory Access Unit) and a CSP (Command Stream Processor): The CSP, after receiving a first command from the MXU, executes commands of a ring buffer, thereby enabling an EU (Execution Unit) to direct the MXU to allocate space of the ring buffer for a first hardware thread and subsequently write second commands of the first hardware thread into the allocated space of the ring buffer according to an instruction of a kernel.

Abstract: A virtual reality goggle includes a goggle shaped body having multiple cameras mounted thereon. A display is supported by the goggle shaped body. A support extends between sides of the goggle shaped body and includes multiple cameras. Circuitry is coupled to receive video from the multiple cameras, the video comprising a composite field of view of approximately 360 degrees about the goggle, the circuitry to couple to a wireless communication device to transmit the received video to networked processing services, and to receive stitched stereoscopic three dimensional virtual reality video from the networked processing services, the circuitry further coupled to provide the received stitched stereoscopic three dimensional virtual reality video for display.

Abstract: An exemplary apparatus includes a testing module connected to, and providing a test voltage to, an integrated circuit containing devices under test. The testing module performs a time-dependent dielectric breakdown (TDDB) test on the devices under test. A decoder is connected to the devices under test and the testing module. The decoder selectively connects each device being tested to the testing module. Efuses are connected to a different one of the devices under test. The efuses separately electrically disconnect each of the devices under test from the test voltage upon failure of a corresponding device under test. Protection circuits are connected between the efuses and a ground voltage. Each protection circuit provides a shunt around the decoder upon failure of the device under test.

Abstract: One illustrative method disclosed herein includes forming a first transistor for an inverter and forming asymmetrically spaced first and second conductive contact structures that are conductively coupled to the source region and the drain region, respectively, of the transistor. In this example, the first conductive contact structure (for the source region) is positioned a first predetermined target distance from a first side of the gate structure of the transistor, and the second conductive contact structure (for the drain region) is positioned a second predetermined target distance from a second side of the gate structure, wherein the second predetermined target distance is less than the first predetermined target distance.

Abstract: An apparatus for enqueuing kernels on a device-side is introduced to incorporate with at least a MXU (Memory Access Unit) and a CSP (Command Stream Processor): The CSP, after receiving a first command from the MXU, executes commands of a ring buffer, thereby enabling an EU (Execution Unit) to direct the MXU to allocate space of the ring buffer for a first hardware thread and subsequently write second commands of the first hardware thread into the allocated space of the ring buffer according to an instruction of a kernel.

Abstract: An apparatus for enqueuing kernels on a device-side is introduced to incorporate with at least a MXU (Memory Access Unit) and a CSP (Command Stream Processor): The CSP, after receiving a first command from the MXU, executes commands of a ring buffer, thereby enabling an EU (Execution Unit) to direct the MXU to allocate space of the ring buffer for a first hardware thread and subsequently write second commands of the first hardware thread into the allocated space of the ring buffer according to an instruction of a kernel.

Abstract: A method for computing trigonometric functions, performed by an ALU (Arithmetic Logic Unit) in coordination with an SFU (Special Function Unit), is introduced to contain at least the following steps. The ALU computes a remainder r and a reduction value x* corresponding to an input parameter x. The SFU computes an intermediate function f(x*) corresponding to the reduction value x*. The ALU computes a multiplication of the reduction value x* by the intermediate function f(x*) as the computation result of a trigonometric function.

Abstract: An exemplary apparatus includes a testing module connected to, and providing a test voltage to, an integrated circuit containing devices under test. The testing module performs a time-dependent dielectric breakdown (TDDB) test on the devices under test. A decoder is connected to the devices under test and the testing module. The decoder selectively connects each device being tested to the testing module. Efuses are connected to a different one of the devices under test. The efuses separately electrically disconnect each of the devices under test from the test voltage upon failure of a corresponding device under test. Protection circuits are connected between the efuses and a ground voltage. Each protection circuit provides a shunt around the decoder upon failure of the device under test.

Abstract: An e-fuse structure including a circuit having an e-fuse operably coupling the circuit to a power source, and a redundant circuit for operably coupling the power source in response to opening of the e-fuse, wherein the e-fuse opens in response to a time-dependent dielectric breakdown (TDDB) percolation current in proximity to the circuit migrating through the e-fuse. A method of programming such an e-fuse structure is also disclosed.

Abstract: A method for generating machine code for driving an execution unit is introduced to incorporate with at least the following steps: Data access instructions of a kernel, which are associated with the same memory surface, are collected. An address pattern associated with the data access instructions is analyzed to generate a global-id address. Machine code containing the global-id address is generated.

Abstract: Memory arrays and reading, programming and erasing methods of the memory arrays are provided. An exemplary memory array includes a plurality of memory columns. Each memory column has a plurality of flash memory cells. The memory columns are divided into at least two blocks. At least one source pull down column is disposed between the two adjacent blocks. Each source pull down column has a plurality of flash memory cells. A source of each flash memory cell in the source pull down column is coupled to sources of the flash memory cells of the plurality memory columns in a same row as the flash memory cell in the source pull down column to pull down a source of a selected flash memory cell to 0 V.

Abstract: A charge pump voltage regulator is provided. The charge pump voltage regulator includes a charge pump circuit, where an output terminal of the charge pump circuit outputs a stable voltage. The charge pump voltage regulator also includes a voltage divider circuit suitable to divide the stable voltage to output a divided voltage and a clock oscillator providing a drive clock signal for the charge pump circuit. In addition, the charge pump voltage regulator includes a first voltage comparator circuit suitable to output at least one of a first comparison result and a second comparison result. Further, the charge pump voltage regulator includes a logic control unit, where, when the charge pump voltage regulator operates in a standby mode, the logic control unit outputs a first control level to the clock oscillator according to the at least one of the first comparison result and the second comparison result.

Abstract: A memory and a reference circuit calibration method are provided. The memory includes: a memory array including a plurality of memory cells; a reference circuit including a reference memory cell and a reference connection terminal, wherein the reference memory cell is a same as the memory cell; a calibration circuit including a calibration connection terminal, and a mirror circuit including a first mirror terminal and a second mirror terminal, wherein the first mirror terminal is connected to the reference connection terminal, and the second mirror terminal is connected to the calibration connection terminal; a clamp circuit, configured to set one of a voltage of the reference connection terminal and a voltage of the calibration connection terminal as a preset voltage and to set the other thereof as a comparison voltage; and a comparison circuit configured to input the comparison voltage and the preset voltage, and to output a comparison result.

Abstract: Memory arrays and reading, programming and erasing methods of the memory arrays are provided. An exemplary memory array includes a plurality of memory columns. Each memory column has a plurality of flash memory cells. The memory columns are divided into at least two blocks. At least one source pull down column is disposed between the two adjacent blocks. Each source pull down column has a plurality of flash memory cells. A source of each flash memory cell in the source pull down column is coupled to sources of the flash memory cells of the plurality memory columns in a same row as the flash memory cell in the source pull down column to pull down a source of a selected flash memory cell to 0 V.