Abstract: A layer of polyimide or polysilicon is used as a mask in vapor hydrogen fluoride etching. Both non-photosensitive and photosensitive type polyimide may be used. A non-photosensitive polyimide mask requires the use of photoresist for patterning with a lithographic mask. Alternatively, photosensitive type polyimide may be patterned directly with the use of a lithographic mask. The resulting polyimide mask enables the etching of very small features with great uniformity. Such etching may be used to expose micropoint emitters of field emission devices.

Abstract: A method of forming a sharp silicon structure, such as a silicon field emitter, includes oxidizing the silicon structure to form an oxide layer thereon, then removing the oxide layer. Oxidizing may occur at a low temperature and form a relatively thin (e.g., about 20 ? to about 40 ?) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. A silicon field emitter that has been fabricated in accordance with the method is substantially free of crystalline defects and may include an emitter tip having a diameter as small as about 40 ? to about 20 ? or less.

Abstract: A method of forming a sharp silicon structure, such as a silicon field emitter, includes oxidizing the silicon structure to form an oxide layer thereon, then removing the oxide layer. Oxidizing may occur at a low temperature and form a relatively thin (e.g., about 20 ? to about 40 ?) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. A silicon field emitter that has been fabricated in accordance with the method is substantially free of crystalline defects and may include an emitter tip having a diameter as small as about 40 ? to about 20 ? or less.

Abstract: A method of sharpening a tapered or pointed silicon structure, such as a silicon field emitter. The method includes oxidizing the silicon field emitter to form an oxide layer thereon and removing the oxide layer. Oxidizing occurs at a low temperature and forms a relatively thin (e.g., about 20 ? to about 40 ?) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. The method may be employed to sharpen existing silicon structures or in fabricating tapered or pointed silicon structures. A silicon field emitter that has been sharpened or fabricated in accordance with the method is substantially free of crystalline defects and includes an emitter tip having a diameter as small as about 40 ? to about 20 ? or less.

Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge are provided. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.

Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge are provided. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.

Abstract: Comblike, surfactant polymers for changing the surface properties of biomaterials are provided. Such surfactant polymers comprise a polymeric backbone of repeating monomeric units having functional groups for coupling with side chains, a plurality of hydrophobic side chains linked to said backbone via the functional groups, and a plurality of hydrophilic side chains linked to said backbone via the functional groups. The hydrophobic side chains comprise an alkyl group comprising from 2 to 18 methylene groups. The alkyl groups are linked to the polymeric backbone through ester linkages, secondary amine linkages, or, preferably, amide linkages.

Abstract: Comblike, surfactant polymers for changing the surface properties of biomaterials are provided. Such surfactant polymers comprise a polymeric backbone of repeating monomeric units having functional groups for coupling with side chains, a plurality of hydrophobic side chains linked to said backbone via the functional groups, and a plurality of hydrophilic side chains linked to said backbone via the functional groups. The hydrophobic side chains comprise an alkyl group comprising from 2 to 18 methylene groups. The alkyl groups are linked to the polymeric backbone through ester linkages, secondary amine linkages, or, preferably, amide linkages.

Abstract: A method for making an electrode structure and an electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the upper surface of the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode.

Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.

Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.

Abstract: A method is provided for immobilizing a ligand, e.g., a nucleic acid, on a solid support. The method includes providing a solid support containing an immobilized latent thiol group, activating the thiol group, contacting the activated thiol group with a nucleic acid comprising an acrylamide functional group, and forming a covalent bond between the two groups, thereby immobilizing the nucleic acid to the solid support. Kits containing the solid supports and method of utilizing the solid supports are also provided.

Abstract: A method is provided for immobilizing a ligand, e.g., a nucleic acid, on a solid support. The method includes providing a solid support containing an immobilized latent thiol group, activating the thiol group, contacting the activated thiol group with a nucleic acid comprising an acrylamide functional group, and forming a covalent bond between the two groups, thereby immobilizing the nucleic acid to the solid support. Kits containing the solid supports and method of utilizing the solid supports are also provided.

Abstract: A thin gel for separating and detecting a target molecule, (e.g., an analyte) and methods of use thereof is described. The gel can be optionally reinforced to facilitate removal from an electrophoretic apparatus, wherein the gel matrix comprises immobilized (e.g., covalently bound) capture probes capable of specifically hybridizing with, or binding to, the analyte to be detected. The gel is thin and very short assay times can be achieved facilitating rapid detection of analytes. An assay apparatus is suitable for use with an electrophoretic assay system for the detection of, or separation and detection of an analyte in a biological sample is also described.

Abstract: A method of sharpening a tapered or pointed silicon structure, such as a silicon field emitter. The method includes oxidizing the silicon field emitter to form an oxide layer thereon and removing the oxide layer. Oxidizing occurs at a low temperature and forms a relatively thin (e.g., about 20 Å to about 40 Å) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. The method may be employed to sharpen existing silicon structures or in fabricating tapered or pointed silicon structures. A silicon field emitter that has been sharpened or fabricated in accordance with the method is substantially free of crystalline defects and includes an emitter tip having a diameter as small as about 40 Å to about 20 Å or less.

Abstract: A method is provided for immobilizing a ligand, e.g., a nucleic acid, on a solid support. The method includes providing a solid support containing an immobilized latent thiol group, activating the thiol group, contacting the activated thiol group with a nucleic acid comprising an acrylamide functional group, and forming a covalent bond between the two groups, thereby immobilizing the nucleic acid to the solid support. Kits containing the solid supports and method of utilizing the solid supports are also provided.

Abstract: A method for making an electrode structure and an electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the upper surface of the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode.

Abstract: A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.

Abstract: The invention relates to a method for producing hydrophilic monomers which are particularly useful for electrophoresis and to electrophoresis compositions and coating compositions. The electrophoresis gel compositions and electrophoresis polymer compositions are hydrolytically stable and have high resolution. The method uses the steps of reacting a (meth)acryloyl with an aminoalcohol in the presence of a base in a polar solvent, optionally filtering an aqueous solution of the reaction product, deionizing an aqueous solution of the reaction product, and removing the solvent.

Abstract: A method of sharpening a tapered or pointed silicon structure, such as a silicon field emitter. The method includes oxidizing the silicon field emitter to form an oxide layer thereon and removing the oxide layer. Oxidizing occurs at a low temperature and forms a relatively thin (e.g., about 20 Å to about 40 Å) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. The method may be employed to sharpen existing silicon structures or in fabricating tapered or pointed silicon structures. A silicon field emitter that has been sharpened or fabricated in accordance with the method is substantially free of crystalline defects and includes an emitter tip having a diameter as small as about 40 Å to about 20 Å or less.