Patents by Inventor Tianhong Zhang
Tianhong Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100230819Abstract: Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which nickel is formed to extend across both the barrier and the component. The barrier may extend around an entire lateral periphery of the component, and may be spaced from the component by an intervening ring of electrically insulative material. The copper component may be a bond pad or an interconnect between two levels of metal layers. Some embodiments include semiconductor constructions in which nickel extends across a copper component, a copper barrier is laterally offset from the copper component, and an insulative material is between the copper barrier and the copper component.Type: ApplicationFiled: May 21, 2010Publication date: September 16, 2010Applicant: MICRON TECHNOLOGY, INC.Inventors: Tianhong Zhang, Akram Ditali
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Patent number: 7749885Abstract: Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which nickel is formed to extend across both the barrier and the component. The barrier may extend around an entire lateral periphery of the component, and may be spaced from the component by an intervening ring of electrically insulative material. The copper component may be a bond pad or an interconnect between two levels of metal layers. Some embodiments include semiconductor constructions in which nickel extends across a copper component, a copper barrier is laterally offset from the copper component, and an insulative material is between the copper barrier and the copper component.Type: GrantFiled: December 15, 2006Date of Patent: July 6, 2010Assignee: Micron Technology, Inc.Inventors: Tianhong Zhang, Akram Ditali
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Patent number: 7504767Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge are provided. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.Type: GrantFiled: March 28, 2005Date of Patent: March 17, 2009Assignee: Micron Technology, Inc.Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Publication number: 20080247988Abstract: Comblike, surfactant polymers for changing the surface properties of biomaterials are provided. Such surfactant polymers comprise a polymeric backbone of repeating monomeric units having functional groups for coupling with side chains, a plurality of hydrophobic side chains linked to said backbone via the functional groups, and a plurality of hydrophilic side chains linked to said backbone via the functional groups. The hydrophobic side chains comprise an alkyl group comprising from 2 to 18 methylene groups. The alkyl groups are linked to the polymeric backbone through ester linkages, secondary amine linkages, or, preferably, amide linkages.Type: ApplicationFiled: May 21, 2007Publication date: October 9, 2008Inventors: Roger E. MARCHANT, Tianhong ZHANG, Yongxing QIU, Mark A. RUEGSEGGER
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Publication number: 20080142982Abstract: Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which nickel is formed to extend across both the barrier and the component. The barrier may extend around an entire lateral periphery of the component, and may be spaced from the component by an intervening ring of electrically insulative material. The copper component may be a bond pad or an interconnect between two levels of metal layers. Some embodiments include semiconductor constructions in which nickel extends across a copper component, a copper barrier is laterally offset from the copper component, and an insulative material is between the copper barrier and the copper component.Type: ApplicationFiled: December 15, 2006Publication date: June 19, 2008Inventors: Tianhong Zhang, Akram Ditali
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Patent number: 7276474Abstract: Comblike, surfactant polymers for changing the surface properties of biomaterials are provided. Such surfactant polymers comprise a polymeric backbone of repeating monomeric units having functional groups for coupling with side chains, a plurality of hydrophobic side chains linked to said backbone via the functional groups, and a plurality of hydrophilic side chains linked to said backbone via the functional groups. The hydrophobic side chains comprise an alkyl group comprising from 2 to 18 methylene groups. The alkyl groups are linked to the polymeric backbone through ester linkages, secondary amine linkages, or, preferably, amide linkages.Type: GrantFiled: April 13, 2004Date of Patent: October 2, 2007Assignee: Nanomimetics, Inc.Inventors: Roger E. Marchant, Tianhong Zhang, Yongxing Qiu, Mark A. Ruegsegger
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Patent number: 7128842Abstract: A layer of polyimide or polysilicon is used as a mask in vapor hydrogen fluoride etching. Both non-photosensitive and photosensitive type polyimide may be used. A non-photosensitive polyimide mask requires the use of photoresist for patterning with a lithographic mask. Alternatively, photosensitive type polyimide may be patterned directly with the use of a lithographic mask. The resulting polyimide mask enables the etching of very small features with great uniformity. Such etching may be used to expose micropoint emitters of field emission devices.Type: GrantFiled: November 27, 2000Date of Patent: October 31, 2006Inventors: Tianhong Zhang, John K. Lee
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Patent number: 7078249Abstract: A method of forming a sharp silicon structure, such as a silicon field emitter, includes oxidizing the silicon structure to form an oxide layer thereon, then removing the oxide layer. Oxidizing may occur at a low temperature and form a relatively thin (e.g., about 20 ? to about 40 ?) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. A silicon field emitter that has been fabricated in accordance with the method is substantially free of crystalline defects and may include an emitter tip having a diameter as small as about 40 ? to about 20 ? or less.Type: GrantFiled: March 7, 2005Date of Patent: July 18, 2006Assignee: Micron Technology, Inc.Inventor: Tianhong Zhang
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Publication number: 20060084192Abstract: A method of forming a sharp silicon structure, such as a silicon field emitter, includes oxidizing the silicon structure to form an oxide layer thereon, then removing the oxide layer. Oxidizing may occur at a low temperature and form a relatively thin (e.g., about 20 ? to about 40 ?) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. A silicon field emitter that has been fabricated in accordance with the method is substantially free of crystalline defects and may include an emitter tip having a diameter as small as about 40 ? to about 20 ? or less.Type: ApplicationFiled: March 7, 2005Publication date: April 20, 2006Inventor: Tianhong Zhang
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Patent number: 6953701Abstract: A method of sharpening a tapered or pointed silicon structure, such as a silicon field emitter. The method includes oxidizing the silicon field emitter to form an oxide layer thereon and removing the oxide layer. Oxidizing occurs at a low temperature and forms a relatively thin (e.g., about 20 ? to about 40 ?) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. The method may be employed to sharpen existing silicon structures or in fabricating tapered or pointed silicon structures. A silicon field emitter that has been sharpened or fabricated in accordance with the method is substantially free of crystalline defects and includes an emitter tip having a diameter as small as about 40 ? to about 20 ? or less.Type: GrantFiled: August 5, 2002Date of Patent: October 11, 2005Assignee: Micron Technology, Inc.Inventor: Tianhong Zhang
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Publication number: 20050168130Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge are provided. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.Type: ApplicationFiled: March 28, 2005Publication date: August 4, 2005Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Patent number: 6900586Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge are provided. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.Type: GrantFiled: August 4, 2003Date of Patent: May 31, 2005Assignee: Micron Technology, Inc.Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Publication number: 20050008603Abstract: Comblike, surfactant polymers for changing the surface properties of biomaterials are provided. Such surfactant polymers comprise a polymeric backbone of repeating monomeric units having functional groups for coupling with side chains, a plurality of hydrophobic side chains linked to said backbone via the functional groups, and a plurality of hydrophilic side chains linked to said backbone via the functional groups. The hydrophobic side chains comprise an alkyl group comprising from 2 to 18 methylene groups. The alkyl groups are linked to the polymeric backbone through ester linkages, secondary amine linkages, or, preferably, amide linkages.Type: ApplicationFiled: April 13, 2004Publication date: January 13, 2005Inventors: Roger Marchant, Tianhong Zhang, Yongxing Qiu, Mark Ruegsegger
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Patent number: 6759388Abstract: Comblike, surfactant polymers for changing the surface properties of biomaterials are provided. Such surfactant polymers comprise a polymeric backbone of repeating monomeric units having functional groups for coupling with side chains, a plurality of hydrophobic side chains linked to said backbone via the functional groups, and a plurality of hydrophilic side chains linked to said backbone via the functional groups. The hydrophobic side chains comprise an alkyl group comprising from 2 to 18 methylene groups. The alkyl groups are linked to the polymeric backbone through ester linkages, secondary amine linkages, or, preferably, amide linkages.Type: GrantFiled: April 29, 1999Date of Patent: July 6, 2004Assignee: Nanomimetics, Inc.Inventors: Roger E. Marchant, Tianhong Zhang, Yongxing Qiu, Mark A. Ruegsegger
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Patent number: 6726518Abstract: A method for making an electrode structure and an electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the upper surface of the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode.Type: GrantFiled: July 19, 2002Date of Patent: April 27, 2004Assignee: Micron Technology, Inc.Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Publication number: 20040027051Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.Type: ApplicationFiled: August 4, 2003Publication date: February 12, 2004Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Patent number: 6630781Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.Type: GrantFiled: June 20, 2001Date of Patent: October 7, 2003Assignee: Micron Technology, Inc.Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Publication number: 20030143570Abstract: A method is provided for immobilizing a ligand, e.g., a nucleic acid, on a solid support. The method includes providing a solid support containing an immobilized latent thiol group, activating the thiol group, contacting the activated thiol group with a nucleic acid comprising an acrylamide functional group, and forming a covalent bond between the two groups, thereby immobilizing the nucleic acid to the solid support. Kits containing the solid supports and method of utilizing the solid supports are also provided.Type: ApplicationFiled: August 1, 2002Publication date: July 31, 2003Applicant: Matrix Technologies CorporationInventors: Ezra S. Abrams, Tianhong Zhang, Slawomir Mielewczyk, Brian C. Patterson
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Publication number: 20030143569Abstract: A method is provided for immobilizing a ligand, e.g., a nucleic acid, on a solid support. The method includes providing a solid support containing an immobilized latent thiol group, activating the thiol group, contacting the activated thiol group with a nucleic acid comprising an acrylamide functional group, and forming a covalent bond between the two groups, thereby immobilizing the nucleic acid to the solid support. Kits containing the solid supports and method of utilizing the solid supports are also provided.Type: ApplicationFiled: August 1, 2002Publication date: July 31, 2003Applicant: Matrix Technologies CorporationInventors: Ezra S. Abrams, Tianhong Zhang, Slawomir Mielewczyk, Brian C. Patterson
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Patent number: RE40490Abstract: A method and apparatus for programmable field emission display comprising an array of cathodoluminescent elements. Each cathodoluminescent element in the array is responsive to separate select signals to cause light to be emitted from said display at a location in the array corresponding to each separate cathodoluminescent element. In one embodiment, to account for processing variation and the like, each cathodoluminescent element is provided with a programmable element for adjusting the operating level of the associated cathodoluminescent element in response to select signals of predetermined voltage levels. Each programmable element includes a charge storage device and is initially programmed by storing a level of electric charge thereon such that uniformity of operation among the plurality of cathodoluminescent elements in the array is improved. In one embodiment the programmable element comprises a floating gate transistor.Type: GrantFiled: November 12, 2003Date of Patent: September 9, 2008Assignee: Micron Technology, Inc.Inventors: Tianhong Zhang, Zhongyi Xia, John Lee, Benham Moradi