Patents by Inventor Tianhong Zhang
Tianhong Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6422907Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the upper surface of the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.Type: GrantFiled: February 14, 2001Date of Patent: July 23, 2002Assignee: Micron Technology, Inc.Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Patent number: 6417617Abstract: A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.Type: GrantFiled: July 24, 2001Date of Patent: July 9, 2002Assignee: Micron Technology, Inc.Inventors: Tianhong Zhang, John K. Lee, Behnam Moradi
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Patent number: 6366266Abstract: A method and apparatus for programmable field emission display comprising an array of cathodoluminescent elements. Each cathodoluminescent element in the array is responsive to separate select signals to cause light to be emitted from said display at a location in the array corresponding to each separate cathodoluminescent element. In one embodiment, to account for processing variation and the like, each cathodoluminescent element is provided with a programmable element for adjusting the operating level of the associated cathodoluminescent element in response to select signals of predetermined voltage levels. Each programmable element includes a charge storage device and is initially programmed by storing a level of electric charge thereon such that uniformity of operation among the plurality of cathodoluminescent elements in the array is improved. In one embodiment the programmable element comprises a floating gate transistor.Type: GrantFiled: September 2, 1999Date of Patent: April 2, 2002Assignee: Micron Technology, Inc.Inventors: Tianhong Zhang, Zhongi Xia
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Patent number: 6361392Abstract: A display apparatus includes a substrate and a plurality of emitters formed on the substrate. The apparatus also includes a dielectric layer formed on the substrate. The dielectric layer includes a plurality of openings each formed about one of the plurality of emitters. The dielectric layer and extraction grid together have a thickness, measured perpendicular to the substrate, similar to a height of the emitters above the substrate. The apparatus also includes an extraction grid formed on the dielectric layer. The extraction grid is formed substantially in a plane of tips of the plurality of emitters and includes openings each formed about and in close proximity to a tip of one of the plurality of emitters. The extraction grid includes germanium so that photons incident on exposed portions of the extraction grid are absorbed and are not transmitted to depletion regions associated with the emitters. This reduces distortion in operation of the display.Type: GrantFiled: May 18, 2001Date of Patent: March 26, 2002Assignee: Micron Technology, Inc.Inventors: Behnam Moradi, Tianhong Zhang
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Patent number: 6348403Abstract: A multilayer structure is provided which suppresses hillock formation due to post-heat treatment steps in thin aluminum films deposited on other substrates by sandwiching the aluminum film between thin layers of aluminum titanium nitride. The first aluminum titanium nitride layer acts as a compatibilizing layer to provide a better match between the coefficients of thermal expansion of the substrate and aluminum metal layer. The second aluminum titanium nitride layer acts as a cap layer to suppress hillock formation.Type: GrantFiled: August 31, 2000Date of Patent: February 19, 2002Assignee: Micron Technology, Inc.Inventors: Kanwal K. Raina, Tianhong Zhang, Allen McTeer
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Publication number: 20020014832Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.Type: ApplicationFiled: June 20, 2001Publication date: February 7, 2002Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Publication number: 20020011778Abstract: A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.Type: ApplicationFiled: July 25, 2001Publication date: January 31, 2002Inventors: Tianhong Zhang, John K. Lee, Behnam Moradi
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Patent number: 6323587Abstract: A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.Type: GrantFiled: August 6, 1998Date of Patent: November 27, 2001Assignee: Micron Technology, Inc.Inventors: Tianhong Zhang, John K. Lee, Behnam Moradi
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Publication number: 20010040429Abstract: A field emission display apparatus includes a plurality of emitters formed on a substrate. Each of the emitters includes a titanium silicide nitride outer layer so that the emitters are less susceptible to degradation. A dielectric layer is formed on the substrate and the emitters, and an opening is formed in the dielectric layer surrounding each of the emitters. A conductive extraction grid is formed on the dielectric layer substantially in a plane defined by the emitters, and includes an opening surrounding each of the emitters. A cathodoluminescent faceplate having a planar surface is disposed parallel to the substrate.Type: ApplicationFiled: July 24, 2001Publication date: November 15, 2001Inventors: Tianhong Zhang, John K. Lee, Behnam Moradi
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Publication number: 20010031600Abstract: A display apparatus includes a substrate and a plurality of emitters formed on the substrate. The apparatus also includes a dielectric layer formed on the substrate. The dielectric layer includes a plurality of openings each formed about one of the plurality of emitters. The dielectric layer and extraction grid together have a thickness, measured perpendicular to the substrate, similar to a height of the emitters above the substrate. The apparatus also includes an extraction grid formed on the dielectric layer. The extraction grid is formed substantially in a plane of tips of the plurality of emitters and includes openings each formed about and in close proximity to a tip of one of the plurality of emitters. The extraction grid includes germanium so that photons incident on exposed portions of the extraction grid are absorbed and are not transmitted to depletion regions associated with the emitters. This reduces distortion in operation of the display.Type: ApplicationFiled: May 18, 2001Publication date: October 18, 2001Inventors: Behnam Moradi, Tianhong Zhang
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Patent number: 6278229Abstract: A display apparatus includes a substrate and a plurality of emitters formed on the substrate. The apparatus also includes a dielectric layer formed on the substrate. The dielectric layer includes a plurality of openings each formed about one of the plurality of emitters. The dielectric layer and extraction grid together have a thickness, measured perpendicular to the substrate, similar to a height of the emitters above the substrate. The apparatus also includes an extraction grid formed on the dielectric layer. The extraction grid is formed substantially in a plane of tips of the plurality of emitters and includes openings each formed about and in close proximity to a tip of one of the plurality of emitters. The extraction grid includes germanium so that photons incident on exposed portions of the extraction grid are absorbed and are not transmitted to depletion regions associated with the emitters. This reduces distortion in operation of the display.Type: GrantFiled: July 29, 1998Date of Patent: August 21, 2001Assignee: Micron Technology, Inc.Inventors: Behnam Moradi, Tianhong Zhang
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Publication number: 20010010991Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the upper surface of the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.Type: ApplicationFiled: February 14, 2001Publication date: August 2, 2001Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Patent number: 6259199Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.Type: GrantFiled: May 23, 2000Date of Patent: July 10, 2001Assignee: Micron Technology, Inc.Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Patent number: 6228667Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. It the silicided layer is treated at a temperature above 1000° C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.Type: GrantFiled: June 29, 2000Date of Patent: May 8, 2001Assignee: Micron Technology, Inc.Inventors: David A. Cathey, Jr., John K. Lee, Tianhong Zhang, Behnam Moradi
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Patent number: 6224447Abstract: An electrode structure for a display device comprising a gate electrode proximate to an emitter and a focusing electrode separated from the gate electrode by an insulating layer containing a ridge. When the focusing electrode is an aperture-type electrode, the ridge protrudes closer to the emitter than the sidewall of the gate electrode or the sidewall of the focusing electrode. When the focusing electrode is a concentric-type electrode, the ridge protrudes above the upper surface of the gate electrode or the upper surface of the focusing electrode. A method for making the aperture-type and concentric-type electrode structures is described. A display device containing such electrode structures is also described. By forming an insulating ridge between the gate and focusing electrodes, shorting between the two electrodes is reduced and yield enhancement increased.Type: GrantFiled: June 22, 1998Date of Patent: May 1, 2001Assignee: Micron Technology, Inc.Inventors: Benham Moradi, Zhong-Yi Xia, Tianhong Zhang
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Patent number: 6165808Abstract: A method of sharpening a tapered or pointed silicon structure, such as a silicon field emitter. The method includes oxidizing the silicon field emitter to form an oxide layer thereon and removing the oxide layer. Oxidizing occurs at a low temperature and forms a relatively thin (e.g., about 20 .ANG. to about 40 .ANG.) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. The method may be employed to sharpen existing silicon structures or in fabricating tapered or pointed silicon structures. A silicon field emitter that has been sharpened or fabricated in accordance with the method is substantially free of crystalline defects and includes an emitter tip having a diameter as small as about 40 .ANG. to about 20 .ANG. or less.Type: GrantFiled: October 6, 1998Date of Patent: December 26, 2000Assignee: Micron Technology, Inc.Inventor: Tianhong Zhang
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Patent number: 6162585Abstract: A layer of polyimide or polysilicon is used as a mask in vapor hydrogen fluoride etching. Both non-photosensitive and photosensitive type polyimide may be used. A non-photosensitive polyimide mask requires the use of photoresist for patterning with a lithographic mask. Alternatively, photosensitive type polyimide may be patterned directly with the use of a lithographic mask. The resulting polyimide mask enables the etching of very small features with great uniformity. Such etching may be used to expose micropoint emitters of field emission devices.Type: GrantFiled: July 1, 1998Date of Patent: December 19, 2000Assignee: Micron Technology, Inc.Inventors: Tianhong Zhang, John K. Lee
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Patent number: 6153358Abstract: A layer of polyimide or polysilicon is used as a mask in vapor hydrogen fluoride etching. Both non-photosensitive and photosensitive type polyimide may be use. A non-photosensitive polyimide mask requires the use of photoresist for patterning with a lithographic mask. Alternatively, photosensitive type polyimide may be patterned directly with the use of a lithographic mask. The resulting polyimide mask enables the etching of very small features with great uniformity. Such etching may be used to expose micropoint emitters of field emission devices.Type: GrantFiled: December 23, 1996Date of Patent: November 28, 2000Assignee: Micorn Technology, Inc.Inventors: Tianhong Zhang, John K. Lee
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Patent number: 6140701Abstract: A multilayer structure is provided which suppresses hillock formation due to post-heat treatment steps in thin aluminum films deposited on other substrates by sandwiching the aluminum film between thin layers of aluminum titanium nitride. The first aluminum titanium nitride layer acts as a compatibilizing layer to provide a better match between the coefficients of thermal expansion of the substrate and aluminum metal layer. The second aluminum titanium nitride layer acts as a cap layer to suppress hillock formation.Type: GrantFiled: August 31, 1999Date of Patent: October 31, 2000Assignee: Micron Technology, Inc.Inventors: Kanwal K. Raina, Tianhong Zhang, Allen McTeer
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Patent number: 6133056Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.Type: GrantFiled: February 24, 1999Date of Patent: October 17, 2000Assignee: Micron Technology, Inc.Inventors: David A. Cathey, Jr., John K. Lee, Tianhong Zhang, Behnam Moradi