Abstract: An integrated circuit includes a plurality of first layer deep lines, a plurality of first layer shallow lines, a plurality of second layer deep lines, and a plurality of second layer shallow lines. The integrated circuit also includes a first active device and a second active device coupled between a conducting path that has a low resistivity portion and a low capacitivity portion. The first active device has an output coupled to a first layer deep line that is in the low resistivity portion. The second active device has an input coupled to a first layer shallow line that is in the low capacitivity portion. The low resistivity portion excludes the first layer shallow lines and the second layer shallow lines, and the low capacitivity portion excludes the first layer deep lines and the second layer deep lines.

Abstract: The present disclosure provides a method for treating hypertension by using a compound, wherein the compound is selected from the group consisting of: (E)-4-(3-(3-methyl benzyloxy)benzylidene)-1-phenylpyrazolidine-3,5-dione, (2R)-2-amino-3-(2,3-dihydro-1H-inden-1-yl)-N?-((E)-quinolin-7-ylmethylene)propane hydrazide, and a combination thereof. The present disclosure uses a small molecule compound (E)-4-(3-(3-methyl benzyloxy)benzylidene)-1-phenylpyrazolidine-3,5-dione, (2R)-2-amino-3-(2,3-dihydro-1H-inden-1-yl)-N?-((E)-quinolin-7-ylmethylene)propane hydrazide or a combination thereof, which can be developed as a therapeutic drug for lowering blood pressure, whether it is taken orally or injected.

Abstract: A thermoelectric semiconductor device includes a heat dissipating semiconductor module and a stack of flash memory dies mounted on a substrate. The heat dissipating module comprises a first semiconductor die such as a controller, and a second semiconductor die such as a thermoelectric semiconductor die to cool the first semiconductor die during operation. The thermoelectric semiconductor die may be mounted to the controller die at the wafer level.

Abstract: A stator structure including a plurality of stator blades and redirection structures including a first portion and a second portion, the first portion disposed on a front edge surface of a stator hub and a second portion disposed on a facing of the stator hub is provided. The stator hub includes the facing and the front edge surface, the facing being disposed generally perpendicular to the casing, and the front edge surface is disposed generally perpendicular to the facing. During operation of a turbine engine a core air flow moves along the longitudinal axis and past the plurality of stator blades, and a leakage air flow moves in a direction different to the core air flow, the redirection structures are effective to redirect the leakage air flow to merge into the core air flow.

Abstract: A method and a control circuit for performing synchronization on playback of multiple electronic devices are provided, where the multiple electronic devices include a master device and a slave device. The method includes: utilizing the master device to receive audio data from a far-end device to be master audio data, and transmitting the master audio data to the slave device to be slave audio data, where the slave device generates ultrasound data according to the slave audio data, to make the slave device play the slave audio data and the ultrasound data; utilizing a calibration circuit to estimate a delay value between the ultrasound data received by a microphone of the master device and the master audio data; and utilizing a delay circuit to control a delay of the master audio data according to the delay value, to generate master output audio data for being played by the master device.

Abstract: An audio signal processing circuit includes a filter, a gain control circuit, and a bass boost circuit. The filter filters an audio signal and produces a filtered signal accordingly. The gain control circuit divides the filtered signal in the time domain into a first segment and a second segment that are substantially equal in length, measures a first amplitude of the first segment and a second amplitude of the second segment, and generates a gain based on the first amplitude which is greater than the second amplitude. The bass boost circuit adjusts the amplitudes of the first segment and the second segment according to the gain.

Abstract: A semiconductor device has shielding to prevent transmission and/or reception of EMI and/or RFI radiation. The semiconductor device comprises a substrate including grounded contact pads around a periphery of the substrate, exposed at one or more edges of the substrate. A bump made of gold or other non-oxidizing conductive material may be formed on the contact pads, for example using ultrasonic welding to remove an oxidation layer between the contact pads and the conductive bumps. The conductive bumps electrically couple to a conductive coating applied around the periphery of the semiconductor device.

Abstract: A semiconductor wafer includes semiconductor dies and laser grooves formed in the scribe lines along the long edges of the semiconductor dies. A laser groove extends between the long edges of two adjacent semiconductor dies to encompass the corners of the two adjacent semiconductor dies. This prevents die cracking, for example during backgrind of the wafer. Moreover, the absence of laser grooves along the short edges of the semiconductor dies prevents die cracking, for example along short edges of dies overhanging empty space that are stressed during portions of the packaging process.

Abstract: A semiconductor device includes a vertical column of wire bonds on substrate contact fingers of the device. Semiconductor dies are mounted on a substrate, and electrically coupled to the substrate such that groups of semiconductor dies may have bond wires extending to the same contact finger on the substrate. By bonding those wires to the contact finger in a vertical column, as opposed to separate, side-by-side wire bonds on the contact finger, an area of the contact finger may be reduced.

Abstract: An audio playback method includes the following steps: receiving an ultrasound signal via a microphone; processing the ultrasound signal to obtain a characteristic value of the ultrasound signal; obtaining time lag information based on the characteristic value; and controlling audio delay according to the time lag information.

Abstract: A cold brew coffee maker has a water cleaning system connected to a water source; a water pump connected to the water cleaning system, and connected to the pressurized-water storage tank for storing a filtered water in the tank; and a coffee brewing module connected to the pressurized-water storage tank and including: a detachable brewing cup detachably secured to a fixing bracket, a solenoid valve formed between the brewing cup and the pressurized-water storage tank, and a switch panel formed in the main body; whereby upon starting of the pump to suck and filter a feed water, a filtered pressurized water less than 30 degrees centigrade will be delivered into the tank and upon actuation of the switch panel to open the solenoid valve, the pressurized water will be ejected into the cup for brewing coffee.

Abstract: A thermoelectric semiconductor device includes a heat dissipating semiconductor module and a stack of flash memory dies mounted on a substrate. The heat dissipating module comprises a first semiconductor die such as a controller, and a second semiconductor die such as a thermoelectric semiconductor die to cool the first semiconductor die during operation. The thermoelectric semiconductor die may be mounted to the controller die at the wafer level.

Abstract: A semiconductor device has vertical contact fingers formed in a substrate having side portions that are flexible. Contact fingers are formed near one or more edges of the flexible side portions of the substrate. After semiconductor dies are mounted to and electrically coupled to the substrate, the semiconductor device may be encapsulated by placing the device in a mold chase including upper and lower mold plates. The lower mold plate is sized smaller than the substrate so that the flexible side portions of the substrate including the contact fingers fold vertically upward to fit within the mold.

Abstract: A semiconductor device has shielding to prevent transmission and/or reception of EMI and/or RFI radiation. The semiconductor device comprises a substrate including grounded contact pads around a periphery of the substrate, exposed at one or more edges of the substrate. A bump made of gold or other non-oxidizing conductive material may be formed on the contact pads, for example using ultrasonic welding to remove an oxidation layer between the contact pads and the conductive bumps. The conductive bumps electrically couple to a conductive coating applied around the periphery of the semiconductor device.

Abstract: An audio signal processing circuit includes a filter, a gain control circuit, and a bass boost circuit. The filter filters an audio signal and produces a filtered signal accordingly. The gain control circuit divides the filtered signal in the time domain into a first segment and a second segment that are substantially equal in length, measures a first amplitude of the first segment and a second amplitude of the second segment, and generates a gain based on the first amplitude which is greater than the second amplitude. The bass boost circuit adjusts the amplitudes of the first segment and the second segment according to the gain.

Abstract: A substrate-less integrated electronic element module for a semiconductor package, comprising: at least two electronic elements, each of the at least two electronic elements having first electrical connectors; and a first molding compound encapsulating the at least two electronic elements, the first molding compound comprising a first planar surface and an opposing second planar surface of the integrated electronic element module, wherein each of the first electrical connectors is directly exposed on the first planar surface of the integrated electronic element module. Further, a semiconductor package including the integrated electronic element module and the method of fabricating the same is provided.

Abstract: A thermoelectric semiconductor device includes a heat dissipating semiconductor module and a stack of flash memory dies mounted on a substrate. The heat dissipating module comprises a first semiconductor die such as a controller, and a second semiconductor die such as a thermoelectric semiconductor die to cool the first semiconductor die during operation. The thermoelectric semiconductor die may be mounted to the controller die at the wafer level.

Abstract: An audio playback method includes the following steps: receiving an ultrasound signal via a microphone; processing the ultrasound signal to obtain a characteristic value of the ultrasound signal; obtaining time lag information based on the characteristic value; and controlling audio delay according to the time lag information.

Abstract: A memory card includes a memory card body dimensioned to house at least one integrated circuit die package. The memory card body, in certain embodiments, includes a first surface spaced apart from a second surface and a plurality of side surfaces connecting the first surface to the second surface. The memory card also includes a contact pad disposed on at least one side surface of the plurality of side surfaces. The contact pad includes a first conductive layer, a second conductive layer, and an insulating layer disposed between the first conductive layer and the second conductive layer.

Abstract: A semiconductor device is disclosed having reinforced supports at corners of the device. The semiconductor device may include solder balls on a lower surface of the device for soldering the device onto a printed circuit board. In one example, the solder balls at the corners of the semiconductor device may be replaced by support billets having more mass and more contact area between the semiconductor device and the PCB. In a further example, screws may be provided at the corners of the device (instead of the corner solder balls or in addition to the corner solder balls). These screws may be placed through the corners of the semiconductor device and into the printed circuit board.