Abstract: A semiconductor device and a fabricating method of semiconductor device are disclosed. The semiconductor device comprises: a substrate having a bonding pad on a surface of the substrate; at least two semiconductor components each having a first surface and a second surface opposite the first surface, the semiconductor components stacked on top of each other on the surface of the substrate via a layer of component attach material attached on the second surface of the respective semiconductor component; an integral through via hole extending completely through the semiconductor components and the layers of component attach material and having a substantially uniform diameter along an extending direction of the integral through via hole aligned with the bonding pad on the surface of the substrate, and a continuous conductive material filled in the integral through via hole and in physical and electrical contact with the bonding pad of the substrate.

Abstract: A semiconductor package including a plurality of stacked semiconductor die, and methods of forming the semiconductor package, are disclosed. In order to ease wirebonding requirements on the controller die, the controller die may be mounted directly to the substrate in a flip chip arrangement requiring no wire bonds or footprint outside of the controller die. Thereafter, a spacer layer may be affixed to the substrate around the controller die to provide a level surface on which to mount one or more flash memory die. The spacer layer may be provided in a variety of different configurations.

Abstract: A method for calculating excursion of a diaphragm of a loudspeaker is provided. The loudspeaker includes a diaphragm and is driven by a voltage signal. The method includes: a) low-pass filtering the voltage signal and a current signal inputted to the loudspeaker to generate a low-pass filtered voltage signal and a low-pass filtered current signal, respectively; b) calculating a direct-current (DC) resistance of the loudspeaker according to the low-pass filtered voltage signal and the low-pass filtered current signal; c) calculating a vibration velocity of the diaphragm according to the voltage signal, the current signal and the DC resistance; and d) calculating the excursion of the diaphragm according to the vibration velocity. Step (a) to step (d) involve real-number calculations.

Abstract: An article of manufacture having a nominal airfoil profile substantially in accordance with Cartesian coordinate values of X, Y, and Z set forth in a scalable TABLE 1, wherein the Cartesian coordinate values of X, Y, and Z are non-dimensional values convertible to dimensional distances by multiplying the Cartesian coordinate values of X, Y, and Z by a number, and wherein X and Y are coordinates which, when connected by continuing arcs, define airfoil profile sections at each Z height, the airfoil profile sections at each Z height being joined with one another to form a complete airfoil shape.

Abstract: A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.

Abstract: A wire bonded structure for a semiconductor device is disclosed. The wire bonded structure comprises a bonding pad; and a continuous length of wire mutually diffused with the bonding pad, the wire electrically coupling the bonding pad with a first electrical contact and a second electrical contact different from the first electrical contact.

Abstract: A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI The device includes a substrate (202), one or more semiconductor die (224,225), and molding compound around the one or more semiconductor die (224,225). The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer (210) on the substrate (202). The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: An article of manufacture having a nominal airfoil profile substantially in accordance with Cartesian coordinate values of X, Y, and Z set forth in a scalable TABLE 1, wherein the Cartesian coordinate values of X, Y, and Z are non-dimensional values convertible to dimensional distances by multiplying the Cartesian coordinate values of X, Y, and Z by a number, and wherein X and Y are coordinates which, when connected by continuing arcs, define airfoil profile sections at each Z height, the airfoil profile sections at each Z height being joined with one another to form a complete airfoil shape.

Abstract: An article of manufacture having a nominal airfoil profile substantially in accordance with Cartesian coordinate values of X, Y, and Z set forth in a scalable TABLE 1, wherein the Cartesian coordinate values of X, Y, and Z are non-dimensional values convertible to dimensional distances by multiplying the Cartesian coordinate values of X, Y, and Z by a number, and wherein X and Y are coordinates which, when connected by continuing arcs, define airfoil profile sections at each Z height, the airfoil profile sections at each Z height being joined with one another to form a complete airfoil shape.

Abstract: A faucet with built-in filter units includes a plurality of filter units arranged inside a main body of the faucet and also includes a dirt discharge valve so that the present invention requires no addition of external filters attached to the main body and enables automatic washing of hollow fiber membrane type filter units arranged therein so as to improve drinking water hygiene and extend lifespan of the filters.

Abstract: The present invention relates to a method for tuning shape, exposed crystal face and size of titanium dioxide by using inorganic salts and changing pH value of the reaction environment. The present invention changes the shape of titanium dioxide crystal and the exposed face thereof by adding different inorganic salts during the reaction to utilize different alkali metal ions of the inorganic salts and also can change the size of titanium dioxide crystal by tuning different pH value in the reaction. By this synthesis method, the shape and size of titanium dioxide can be tuned for different applications, such as photocatalysis, dye-sensitized solar cells, photolysis of water and other optoelectronic components or materials, to achieve their optimal efficiencies.

Abstract: A photoelectric conversion material is disclosed in the present invention and comprises at least a cone material. The cone material is composed of an isomer and comprises a plurality of grains. The sizes of the grains are arranged from smaller ones to larger ones along a direction. In the meantime, a method for fabricating the above photoelectric conversion material is also disclosed here. The method comprises the following steps. First, a precursor is provided. The precursor comprises at least a cone material and the cone material is a multilayer structured material, such as sodium titanate and potassium titanate, formed by stacking first materials and second materials. And then, the precursor is annealed to let the second materials leave from the cone material, and the cone material becomes the above photoelectric conversion material with a plurality of grains.

Abstract: A memory device, and a method of making the memory device, are disclosed. The memory device is fabricated by mounting one or more semiconductor die on a substrate, and wire bonding the die to the substrate. The die and wire bonds are encapsuated, and the encapsulated device is singulated. The wire bonds are severed during the singulation step, and thereafter the severed wire bonds are connected to the substrate by external connectors on one or more surfaces of the molding compound.

Abstract: A memory device including a metallic layer shielding electromagnetic radiation and/or dissipating heat, and a method of making the memory device, are disclosed. The metallic layer is formed on a metallic layer transfer assembly. The metallic layer transfer assembly and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the metallic layer is transferred from the shield to the encapsulated memory device.

Abstract: A laminating device (230) and method are disclosed for laminating semiconductor die (220) on substrates on a panel (200) of substrates. The laminating device (230) includes lamination units (234,236,238,240) that operate independently of each other so that a row or column of semiconductor die (220) may be independently laminated onto a row or column of substrates simultaneously.

Abstract: A memory device including graphical content and a method of making the memory device with graphical content are disclosed. The graphical content is formed on a release media. The release media and the unencapsulated memory device are placed in a mold and encapsulated. During the encapsulation and curing of the molding compound, the graphical content is transferred from the release media to the encapsulated memory device.

Abstract: A photoelectric conversion material is disclosed in the present invention and comprises at least a cone material. The cone material is composed of an isomer and comprises a plurality of grains. The sizes of the grains are arranged from smaller ones to larger ones along a direction. In the meantime, a method for fabricating the above photoelectric conversion material is also disclosed here. The method comprises the following steps. First, a precursor is provided. The precursor comprises at least a cone material and the cone material is a multilayer structured material, such as sodium titanate and potassium titanate, formed by stacking first materials and second materials. And then, the precursor is annealed to let the second materials leave from the cone material, and the cone material becomes the above photoelectric conversion material with a plurality of grains.

Abstract: A semiconductor device includes a substrate (102) with a cavity (112) formed therein for receiving a semiconductor die. In examples, the semiconductor die is a controller die (114). The controller die (114) may be electrically connected to the substrate (102) with electrical traces (120) which may be formed for example by printing. After the controller die (114) is electrically connected to the substrate (102), one or more memory die (150) may be affixed to the substrate (102), over the cavity (112) and controller die (114).