Abstract: A semiconductor device and a fabricating method of semiconductor device are disclosed. The semiconductor device includes: a substrate having a bonding pad on a surface of the substrate; at least two semiconductor components each having a first surface and a second surface opposite the first surface, the semiconductor components stacked on top of each other on the surface of the substrate via a layer of component attach material attached on the second surface of the respective semiconductor component; an integral through via hole extending completely through the semiconductor components and the layers of component attach material and having a substantially uniform diameter along an extending direction of the integral through via hole aligned with the bonding pad on the surface of the substrate, and a continuous conductive material filled in the integral through via hole and in physical and electrical contact with the bonding pad of the substrate.

Abstract: A semiconductor device is disclosed including at least first and second vertically stacked and interconnected semiconductor packages. Signal communication between the second semiconductor package and a host device occurs through the first semiconductor package.

Abstract: A semiconductor device is disclosed including at least first and second vertically stacked and interconnected groups of semiconductor packages. The first and second groups of semiconductor packages may differ from each other in the number of packages and functionality.

Abstract: An audio enhancement device including an audio-calculating module, a ratio-calculating module, a minimum-tracking module, a weighting-calculating module and a mixing module is provided. The audio-calculating module calculates a mid signal and a side signal according to a sum and a difference of an input first channel signal and an input second channel signal. The ratio-calculating module calculates a side-mid ratio of the side signal relative to the mid signal. The minimum-tracking module tracks a side-mid ratio minimum. The weighting-generating module determines a first and a second weighting values according to the side-mid ratio minimum. The mixing module weights the mid signal and the side signal based on the first and the second weighting values respectively and adjusts the input first channel signal and the input second channel signal accordingly to generate an enhanced first channel signal and an enhanced second channel signal.

Abstract: A semiconductor package is disclosed including a number of stacked semiconductor die, electrically connected to each other with wire bonds. The stacked semiconductor die are provided in a mold compound such that a spacing exists between a top die in the die stack and a surface of the mold compound. The wire bonds to the top die may be provided in the spacing. An RDL pad is affixed to the surface of the mold compound. Columns of bumps may be formed on the die bond pads of the top die in the die stack to electrically couple the RDL pad to the die stack across the spacing.

Abstract: A semiconductor device including control switches enabling a semiconductor die in a stack of semiconductor die to send or receive a signal, while electrically isolating the remaining die in the die stack. Parasitic pin cap is reduced or avoided by electrically isolating the non-enabled semiconductor die in the die stack.

Abstract: A device may include a fan-out structure that has a plurality of integrated circuits. The integrated circuits may be of different types, such as by being configured differently or configured to perform different functions. The fan-out structure may be coupled to another integrated circuit structure, such as a die stack. For example, the fan-out structure may be coupled to a top surface or a bottom surface of the integrated circuit structure, or may otherwise be disposed within a vertical profile defined by the integrated circuit structure. Horizontally-extending and vertically-extending paths may be disposed in between and around the combined fan-out structure and integrated circuit structure to enable the integrated circuits of the two structures to communicate.

Abstract: A semiconductor device is disclosed mounted at an angle on a signal carrier medium such as a printed circuit board. The semiconductor device includes a stack of semiconductor die stacked in a stepped offset configuration. The die stack may then be encapsulated in a block of molding compound. The molding compound may then be singulated with slanted cuts along two opposed edges. The slanted edge may then be drilled to expose the electrical contacts on each of the semiconductor die. The slanted edge may then be positioned against a printed circuit board having solder or other conductive bumps so that the conductive bumps engage the semiconductor die electrical contacts in the drilled holes. The device may then be heated to reflow and connect the electrical contacts to the conductive bumps.

Abstract: Provided is an infrared radiation blocking material including a plurality of microspheres. The particle size of each of the microspheres is 1000 nm to 2600 nm. The microspheres have a light transmittance of at least 50% within the light wavelength range of 400 nm to 700 nm and have a blocking rate of greater than 40% within the light wavelength range of 700 nm to 1500 nm.

Abstract: A semiconductor device is disclosed including at least first and second vertically stacked and interconnected groups of semiconductor packages. The first and second groups of semiconductor packages may differ from each other in the number of packages and functionality.

Abstract: A printed circuit board is disclosed having coextensive electrical connectors and contact pad areas. Areas of the contact pads where the traces and/or vias are located may be etched away to ensure electrical isolation between the traces, vias and contact pads.

Abstract: A sweet atmosphere humidifier comprises a base, a control module, an air-guiding cap, a water box and a decorative cover. The air-guiding cap is provided with a chamber and a first conductive terminal exposed inside the chamber. The water box is provided with a liquid storage tank, an atomizing unit inside the liquid storage tank, and a second conductive terminal on the external surface of the water box. The base, the control module, the air-guiding cap and the water box are mounted inside the decorative cover. In the sweet atmosphere humidifier, the atomizing unit is possibly provided in the water box to be replaced conveniently by fitting the first conductive terminal to the second conductive terminal. Moreover, the appearance profile of the decorative cover may be further fitted to the shape of base, control module, air-guiding cap and water box, so as to obtain more interesting appearance.

Abstract: An article of manufacture having a nominal airfoil profile substantially in accordance with Cartesian coordinate values of X, Y, and Z set forth in a scalable TABLE 1, wherein the Cartesian coordinate values of X, Y, and Z are non-dimensional values convertible to dimensional distances by multiplying the Cartesian coordinate values of X, Y, and Z by a number, and wherein X and Y are coordinates which, when connected by continuing arcs, define airfoil profile sections at each Z height, the airfoil profile sections at each Z height being joined with one another to form a complete airfoil shape.

Abstract: Provided is a sun protection material including a plurality of polystyrene microspheres and a plurality of refractive layers. The polystyrene microspheres have a particle size of 150 nm to 300 nm. Surfaces of the polystyrene microspheres are at least partially covered by the refractive layers. The sun protection material can scatter a light in a wavelength range between 250 nm and 400 nm. A sun protection composition containing the sun protection material also may scatter a light of a wavelength range between 250 nm and 400 nm, such that the UV protection of the sun protection composition is enhanced.

Abstract: The present technology relates to a semiconductor package. The semiconductor package comprises: a first component comprising a plurality of first dies stacked on top of each other, each of first dies comprising at least one side surface and an electrical contact exposed on the side surface, and the plurality of first dies aligned so that the corresponding side surfaces of all first dies substantially coplanar with respect to each other to form a common sidewall; a first conductive pattern formed over the sidewall and at least partially spaced away from the sidewall, the first conductive pattern electrically interconnecting the electrical contacts of the plurality of first dies; at least one second component; and a second conductive pattern formed on a surface of the second component, the second conductive pattern affixed and electrically connected to the first conductive pattern formed over the sidewall of the first component.

Abstract: The present technology relates to a semiconductor device. The semiconductor device comprises: a plurality of dies stacked on top of each other, each of the dies comprising a first major surface, an IO conductive pattern on the first major surface and extended to a minor surface substantially perpendicular to the major surfaces to form at least one IO electrical contact on the minor surface, and the plurality of dies aligned so that the corresponding minor surfaces of all dies substantially coplanar with respect to each other to form a common flat sidewall, and a plurality of IO routing traces formed over the sidewall and at least partially spaced away from the sidewall. The plurality of IO routing traces are spaced apart from each other in a first direction on the sidewall, and each of IO routing traces is electrically connected to a respective IO electrical contact and extended across the sidewall in a second direction substantially perpendicular to the first direction on the sidewall.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: A semiconductor device vertically mounted on a medium such as a printed circuit board, and a method of its manufacture, are disclosed. The semiconductor device includes a stack of semiconductor die having contact pads which extend to an active edge of the die aligned on one side of the stack. The active edges of the die are affixed to the PCB and the contact pads at the active edge are electrically coupled to the PCB. This configuration provides an optimal, high density arrangement of semiconductor die in the device, where a large number of semiconductor die can be mounted and electrically coupled directly to the PCT, without a substrate, without staggering the semiconductor die, and without using wire bonds.

Abstract: A semiconductor package is disclosed including a number of stacked semiconductor die, electrically connected to each other with wire bonds. The stacked semiconductor die are provided in a mold compound such that a spacing exists between a top die in the die stack and a surface of the mold compound. The wire bonds to the top die may be provided in the spacing. An RDL pad is affixed to the surface of the mold compound. Columns of bumps may be formed on the die bond pads of the top die in the die stack to electrically couple the RDL pad to the die stack across the spacing.

Abstract: A semiconductor device is disclosed including at least first and second vertically stacked and interconnected semiconductor packages. Signal communication between the second semiconductor package and a host device occurs through the first semiconductor package.