Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a first metal trace having a first metal trace width between about 30 nm to about 60 nm and a first metal trace length. A second metal trace has a second metal trace width between about 10 nm to about 20 nm and a second metal trace length, the first metal trace length different than the second metal trace length. A dielectric layer is between the first metal trace and the second metal trace. The dielectric layer has a dielectric layer width between the first metal trace and the second metal trace between about 10 nm to about 20 nm. The semiconductor arrangement is formed in a manner that allows metal traces having small dimensions to be formed where the metal traces have different dimensions from one another.

Abstract: A metal first, via first process for forming interconnects within a metallization layer of a semiconductor device is provided. In an embodiment a conductive material is deposited and the conductive material is patterned into a conductive line and a via. A dielectric material is deposited over the conductive line and the via, and the dielectric material and the via are planarized.

Abstract: A device comprises a first rounded metal line in a metallization layer over a substrate, a second rounded metal line in the metallization layer, a first air gap between sidewalls of the first rounded metal line and the second metal line, a first metal line in the metallization layer, wherein a top surface of the first metal line is higher than a top surface of the second rounded metal line and a bottom surface of the first metal line is substantially level with a bottom surface of the second rounded metal line and a second air gap between sidewalls of the second rounded metal line and the first metal line.

Abstract: The present disclosure relates to a method of forming a BEOL metallization layer that uses different conductive materials (e.g., metals) to fill different size openings in an inter-level dielectric layer, and an associated apparatus. In some embodiments, the present disclosure relates to an integrated chip having a first plurality of metal interconnect structures disposed within a first BEOL metallization layer, which include a first conductive material. The integrated chip also has a second plurality of metal interconnect structures disposed within the first BEOL metallization layer at positions laterally separated from the first plurality of metal interconnect structures. The second plurality of metal interconnect structures have a second conductive material that is different than the first conductive material.

Abstract: Conductive element structures and methods of manufacture thereof are disclosed. In some embodiments, a method of forming a conductive element in an insulating layer includes: forming a recess in a metal layer disposed over the insulating layer; selectively forming a metal liner on a sidewall of the recess; and etching a via in the insulating layer using the metal layer and the metal liner as a mask.

Abstract: A wafer etching apparatus and a method for controlling an etch bath of a wafer is provided. The wafer etching apparatus includes an etching tank comprising an etch bath, an etch bath recycle system connected to the etching tank, a real time monitor (RTM) system connected to the etching tank, and a control system coupled with the RTM system and the etch bath recycle system. The wafer etching apparatus and the method for controlling an etch bath of the wafer both control the silicate concentration in the etch bath to stable an etching selectivity with respect to silicon oxide and silicon nitride.

Abstract: Disclosed herein is a structure conductive lines disposed in a base layer and separated by a first region. Pillars are each disposed over a respective one of the conductive lines. A dielectric fill layer is disposed over the pillars and extending between the pillars into the first region, and a void is disposed in the dielectric fill layer in the first region between the conductive lines.

Abstract: An embodiment semiconductor device includes a substrate and a dielectric layer over the substrate. The dielectric layer includes a first conductive line and a second conductive line. The second conductive line comprises a different conductive material than the first conductive line.

Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a first metal trace having a first metal trace width between about 30 nm to about 60 nm and a first metal trace length. A second metal trace has a second metal trace width between about 10 nm to about 20 nm and a second metal trace length, the first metal trace length different than the second metal trace length. A dielectric layer is between the first metal trace and the second metal trace. The dielectric layer has a dielectric layer width between the first metal trace and the second metal trace between about 10 nm to about 20 nm. The semiconductor arrangement is formed in a manner that allows metal traces having small dimensions to be formed where the metal traces have different dimensions from one another.

Abstract: An aluminum (Al) layer is formed over a semiconductor substrate. A selective portion of the Al layer is removed to form openings. The Al layer is anodized to obtain an alumina dielectric layer with a plurality of pores. The openings are filled with a conductive interconnect material. The pores are widened to form air gaps and a top etch stop layer is formed over the alumina dielectric layer.

Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes an interconnect which includes an interconnect metal plug surrounded by a second metal layer. The interconnect is adjacent a sidewall of a dielectric, such that an air gap is between the interconnect and the sidewall of the dielectric. A protective barrier is over the interconnect and the air gap, and is over and in direct physical contact with a top surface of the dielectric. The interconnect metal plug surrounded by the second metal layer is less susceptible to damage than an interconnect metal plug that is not surrounded by a second metal layer. The protective barrier in direct physical contact with the dielectric reduces parasitic capacitance, which reduces an RC delay of the semiconductor arrangement, as compared to a semiconductor arrangement that does not have a protective barrier in direct physical contact with a dielectric.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A conductive feature over a substrate is provided. A first dielectric layer is deposited over the conductive feature and the substrate. A via-forming-trench (VFT) is formed in the first dielectric layer to expose the conductive feature and the substrate around the conductive feature. The VFT is filled in by a sacrificial layer. A via-opening is formed in the sacrificial layer to expose the conductive feature. A metal plug is formed in the via-opening to connect to the conductive feature. The sacrificial layer is removed to form a surrounding-vacancy around metal plug and the conductive feature. A second dielectric layer is deposited over the substrate to seal a portion of the surrounding-vacancy to form an enclosure-air-gap all around the metal plug and the conductive feature.

Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement comprises a conductive contact in contact with a substantially planar first top surface of a first active area, the contact between and in contact with a first alignment spacer and a second alignment spacer both having substantially vertical outer surfaces. The contact formed between the first alignment spacer and the second alignment spacer has a more desired contact shape then a contact formed between alignment spacers that do not have substantially vertical outer surfaces. The substantially planar surface of the first active area is indicative of a substantially undamaged structure of the first active area as compared to an active area that is not substantially planar. The substantially undamaged first active area has a greater contact area for the contact and a lower contact resistance as compared to a damaged first active area.

Abstract: An aluminum (Al) layer is formed over a semiconductor substrate. A selective portion of the Al layer is removed to form openings. The Al layer is anodized to obtain an alumina dielectric layer with a plurality of pores substantially perpendicular to a surface of the semiconductor substrate. The openings are filled with a conductive interconnect material. The pores are widened to form air gaps and a top etch stop layer is formed over the alumina dielectric layer.

Abstract: An aluminum (Al) layer is formed over a semiconductor substrate. A selective portion of the Al layer is removed to form openings. The Al layer is anodized to obtain an alumina dielectric layer with a plurality of pores substantially perpendicular to a surface of the semiconductor substrate. The openings are filled with a conductive interconnect material. The pores are widened to form air gaps and a top etch stop layer is formed over the alumina dielectric layer.

Abstract: An interconnect structure includes a first low-k dielectric layer formed over a substrate. A first metal line is disposed in the first low-k dielectric layer. The first metal line includes a first conductive body with a first width and an up landing pad with a second width. The first width is smaller than the second width. The interconnect structure further includes a first air-gap adjacent to sidewalls of the first conductive body. The interconnect structure also includes a second low-k dielectric layer formed over the first low-k dielectric layer and a first via in the second low-k dielectric layer and disposed on the up landing pad.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes several operations as follows. A semiconductor substrate is received. A trench along a depth in the semiconductor substrate is formed. The semiconductor substrate is exposed in a hydrogen containing atmosphere. Dopants are inserted into a portion of the semiconductor substrate. A dielectric is filled in the trench. The dopants are driven into a predetermined distance in the semiconductor substrate.

Abstract: A memory cell comprising a capacitor having a dielectric layer interposing first and second vertically disposed electrodes, an insulating lining located over the capacitor, and a transistor gate extension passing over the capacitor. A spacer isolates an end of one of the capacitor electrodes from the transistor gate extension. In one embodiment, the spacer includes a first non-planar profile configured to engage a second non-planar profile comprising ends of the one of the capacitor electrodes and the insulating lining.

Abstract: A capacitor structure within a microelectronic product employs at least one of: (1) an oxidation barrier layer formed upon a second capacitor plate within the capacitor structure; and (2) a spacer formed adjoining a sidewall of the second capacitor plate, where the spacer is formed with an “L” shape. The foregoing features of the capacitor structure provide a capacitor formed therein with enhanced performance.

Abstract: A capacitor structure within a microelectronic product employs at least one of: (1) an oxidation barrier layer formed upon a second capacitor plate within the capacitor structure; and (2) a spacer formed adjoining a sidewall of the second capacitor plate, where the spacer is formed with an “L” shape. The foregoing features of the capacitor structure provide a capacitor formed therein with enhanced performance.