Abstract: An input buffer receiver circuit for electronic devices (e.g., memory chips) to receive reduced-swing and high bandwidth inputs to provide “buffered” output signals having symmetrical rising and falling delays, and without additional current dissipation over previous receiver circuits, is disclosed. The receiver circuit may include two differential amplifier pair stages (i.e., 4 total differential amplifiers). The first stage of differential amplifiers convert the single-ended input signal to a full-differential signal, which is converted back to a single-ended output signal by the second stage of differential amplifiers. The output of a P-diff first stage may be connected to the input of an N-diff second stage and the output of an N-diff first stage may be connected to the input of a P-diff second stage thereby creating a “cross coupled” structure. Various current saving and biasing methods may also be employed to keep operating current the same or lower than previous designs.

Abstract: An input buffer receiver circuit for electronic devices (e.g., memory chips) to receive and process reduced-swing and high bandwidth inputs to obtain “buffered” output signals therefrom with symmetrical rising and falling delays, and without additional current dissipation over previous receiver circuits, is disclosed. The receiver circuit may include two stages of differential amplifier pairs (i.e., a total of 4 separated differential amplifiers). The differential amplifiers in the first stage convert the single-ended input signal to a full-differential signal, which is then converted back to a single-ended output signal by the differential amplifier pair in the second stage. The output of a P-diff first stage may be connected to the input of an N-diff second stage and the output of an N-diff first stage may be connected to the input of a P-diff second stage thereby creating a “cross” coupled structure.

Abstract: A low-current input buffer is disclosed. The buffer uses self-biased N and P channel differential pairs with their outputs tied together. The self-biasing assists in reducing current consumption. The combination of N and P-channel differential pairs results in symmetry across a wide range of reference and supply voltages.

Abstract: In a memory device, an on-die register is provided that is configured to store a row address as well as a column address of a memory cell that fails a test. Storing the row address frees testing from being limited to activating at one time only rows related to a common redundant segment. Storing the row address also guides repair using segmented redundancy. As an addition or alternative, information may be stored in an anti-fuse bank that is designed to provide access to a redundant cell but has not yet enabled access to that cell. If the information stored in the anti-fuse bank relates to the failure of the redundant cell, such information may be used to avoid repairing with that redundant cell.

Abstract: A low-current input buffer is disclosed. The buffer uses self-biased N and P channel differential pairs with their outputs tied together. The self-biasing assists in reducing current consumption. The combination of N and P-channel differential pairs results in symmetry across a wide range of reference and supply voltages.

Abstract: There is provided a reduced current input buffer circuit. More specifically, in one embodiment, there is provided an input buffer circuit comprising an input buffer that is adapted to draw an operating current, means for providing a first portion of the operating current to the input buffer, and means for providing a second portion of the operating current to the input buffer if the input buffer is expecting data.

Abstract: An isolation circuit, comprising a first transistor having a gate, a first source/drain terminal, and a second source/drain terminal, a first pad coupled to the gate of the first transistor, the first pad operable to receive an enable signal, a second pad coupled to the first source/drain of the first transistor, the second pad operable to receive a ground potential, a first fuse device coupling the second source/drain terminal to a node, a second fuse device coupling the node to the first pad, a third pad operable to receive a signal to be applied to at least one die, and a second transistor operable to selectively transfer the signal received at the third pad to the at least one die in response to a control signal provided by the node.

Abstract: In a memory device, an on-die register is provided that is configured to store a row address as well as a column address of a memory cell that fails a test. Storing the row address frees testing from being limited to activating at one time only rows related to a common redundant segment. Storing the row address also guides repair using segmented redundancy. As an addition or alternative, information may be stored in an anti-fuse bank that is designed to provide access to a redundant cell but has not yet enabled access to that cell. If the information stored in the anti-fuse bank relates to the failure of the redundant cell, such information may be used to avoid repairing with that redundant cell.

Abstract: A low-current input buffer is disclosed. The buffer uses self-biased N and P channel differential pairs with their outputs tied together. The self-biasing assists in reducing current consumption. The combination of N and P-channel differential pairs results in symmetry across a wide range of reference and supply voltages.

Abstract: Various embodiments include apparatus, systems, and methods having multiple dice arranged in a stack in which a defective cell may be replaced by a spare cell on the same die or a different die. Other embodiments are described.

Abstract: In a multi-bank memory system such as a synchronous dynamic random access memory (SDRAM), a method of writing data to the banks is provided. This method allows for writing to any number of banks. More particularly, this method allows for writing to a selected number of banks between one and all banks. In addition, the method retains the discrete nature of the selected banks by allowing any row in each bank to be accessed regardless of the rows activated in other banks. As a result, rows of different memory banks that are intended to store similar data may be accessed simultaneously for purposes of writing the data in test and non-test modes. This allows for quicker writing to the SDRAM without the errors that may be created by other fast writing modes, such as data compression.

Abstract: Various embodiments include apparatus, systems, and methods having multiple dice arranged in a stack in which a defective cell may be replaced by a spare cell on the same die or a different die.

Abstract: There is provided a reduced current input buffer circuit. More specifically, in one embodiment, there is provided an input buffer circuit comprising an input buffer that is adapted to draw an operating current, means for providing a first portion of the operating current to the input buffer, and means for providing a second portion of the operating current to the input buffer if the input buffer is expecting data.

Abstract: A low-current input buffer is disclosed. The buffer uses self-biased N and P channel differential pairs with their outputs tied together. The self-biasing assists in reducing current consumption. The combination of N and P-channel differential pairs results in symmetry across a wide range of reference and supply voltages.

Abstract: A low-current input buffer is disclosed. The buffer uses self-biased N and P channel differential pairs with their outputs tied together. The self-biasing assists in reducing current consumption. The combination of N and P-channel differential pairs results in symmetry across a wide range of reference and supply voltages.

Abstract: Various embodiments include apparatus, systems, and methods having multiple dice arranged in a stack in which a defective cell may be replaced by a spare cell on the same die or a different die.

Abstract: There is provided a reduced current input buffer circuit. More specifically, in one embodiment, there is provided an input buffer circuit comprising an input buffer that is adapted to draw an operating current, means for providing a first portion of the operating current to the input buffer, and means for providing a second portion of the operating current to the input buffer if the input buffer is expecting data.

Abstract: An input buffer receiver circuit for electronic devices (e.g., memory chips) to receive and process reduced-swing and high bandwidth inputs to obtain “buffered” output signals therefrom with symmetrical rising and falling delays, and without additional current dissipation over previous receiver circuits, is disclosed. The receiver circuit may include two stages of differential amplifier pairs (i.e., a total of 4 separated differential amplifiers). The differential amplifiers in the first stage convert the single-ended input signal to a full-differential signal, which is then converted back to a single-ended output signal by the differential amplifier pair in the second stage. The output of a P-diff first stage may be connected to the input of an N-diff second stage and the output of an N-diff first stage may be connected to the input of a P-diff second stage thereby creating a “cross” coupled structure.

Abstract: In a multi-bank memory system such as a synchronous dynamic random access memory (SDRAM), a method of writing data to the banks is provided. This method allows for writing to any number of banks. More particularly, this method allows for writing to a selected number of banks between one and all banks. In addition, the method retains the discrete nature of the selected banks by allowing any row in each bank to be accessed regardless of the rows activated in other banks. As a result, rows of different memory banks that are intended to store similar data may be accessed simultaneously for purposes of writing the data in test and non-test modes. This allows for quicker writing to the SDRAM without the errors that may be created by other fast writing modes, such as data compression.

Abstract: An input buffer receiver circuit for electronic devices (e.g., memory chips) to receive and process reduced-swing and high bandwidth inputs to obtain “buffered” output signals therefrom with symmetrical rising and falling delays, and without additional current dissipation over previous receiver circuits, is disclosed. The receiver circuit may include two stages of differential amplifier pairs (i.e., a total of 4 separated differential amplifiers). The differential amplifiers in the first stage convert the single-ended input signal to a full-differential signal, which is then converted back to a single-ended output signal by the differential amplifier pair in the second stage. The output of a P-diff first stage may be connected to the input of an N-diff second stage and the output of an N-diff first stage may be connected to the input of a P-diff second stage thereby creating a “cross” coupled structure.