Abstract: A three dimensional integrated circuit (3D-IC) structure, method of manufacturing the same and design structure thereof are provided. The 3D-IC structure includes two chips having a dielectric layer, through substrate vias (TSVs) and pads formed on the dielectric layer. The dielectric layer is formed on a bottom surface of each chip. Pads are electrically connected to the corresponding TSVs. The chips are disposed vertically adjacent to each other. The bottom surface of a second chip faces the bottom surface of a first chip. The pads of the first chip are electrically connected to the pads of the second chip through a plurality of conductive bumps. The 3D-IC structure further includes a thermal via structure vertically disposed between the first chip and the second chip and laterally disposed between the corresponding conductive bumps. The thermal via structure has an upper portion and a lower portion.

Abstract: Structures and methods for forming good electrical connections between an integrated circuit (IC) chip and a chip carrier of a flip chip package include forming one of: a tensile layer on a front side of the IC chip, which faces a tops surface of the chip carrier, and a compressive layer on the backside of the IC chip. Addition of one of: a tensile layer to the front side of the IC chip and a compressive layer the backside of the IC chip, may reduce or modulate warpage of the IC chip and enhance wetting of opposing solder surfaces of solder bumps on the IC chip and solder formed on flip chip (FC) attaches of a chip carrier during making of the flip chip package.

Abstract: A semiconductor fuse device and a method of fabricating the fuse device including a last metal interconnect layer including at least two discrete metal conductors, an inter-level dielectric layer deposited over the last metal interconnect layer and the at least two discrete metal conductors, a thin wire aluminum fuse connecting the at least two discrete metal conductors, and a fuse opening above the aluminum fuse.

Abstract: Wire-bonded semiconductor structures using organic insulating material and methods of manufacture are disclosed. The method includes forming a metal wiring layer in an organic insulator layer. The method further includes forming a protective layer over the organic insulator layer. The method further includes forming a via in the organic insulator layer over the metal wiring layer. The method further includes depositing a metal layer in the via and on the protective layer. The method further includes patterning the metal layer with an etch chemistry that is damaging to the organic insulator layer.

Abstract: A method including forming a plurality of dicing channels in a front side of a wafer; the plurality of dicing channels including a depth at least greater than a desired final thickness of the wafer, filling the plurality of dicing channels with a fill material and removing a portion of the wafer from a back side of the wafer until the desired final thickness is achieved, where a portion of the fill material within the plurality of dicing channel is exposed. The method further including depositing a metal layer on the back side of the wafer; removing the fill material from within the plurality of dicing channels to expose the metal layer at a bottom of the plurality of dicing channels, and removing a portion of the metal layer located at the bottom of the plurality of dicing channels.

Abstract: A layer of material can protect a surface of a passivation layer against damage during a final via plug process. The protective layer can be a conductive bump limiting metallurgy (BLM) base layer and can include titanium tungsten (TiW), though other materials can be employed. Examples include applying the protective layer after formation of a via opening and prior to formation of a via opening, and can include applying more protective material after conductor plug formation to enhance protection. Photosensitive and non-photosensitive passivation layers can be so protected.

Abstract: A semiconductor fuse device and a method of fabricating the fuse device including a last metal interconnect layer including at least two discrete metal conductors, an inter-level dielectric layer deposited over the last metal interconnect layer and the at least two discrete metal conductors, a thin wire aluminum fuse connecting the at least two discrete metal conductors, and a fuse opening above the aluminum fuse.

Abstract: A splash containment structure for semiconductor structures and associated methods of manufacture are provided. A method includes: forming wire bond pads in an integrated circuit chip and forming at least one passivation layer on the chip. The at least one passivation layer includes first areas having a first thickness and second areas having a second thickness. The second thickness is greater than the first thickness. The first areas having the first thickness extend over a majority of the chip. The second areas having the second thickness are adjacent the wire bond pads.

Abstract: Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a via formed in a dielectric layer to expose a contact pad and a capture pad formed in the via and over the dielectric layer. The capture pad has openings over the dielectric layer to form segmented features. The solder bump is deposited on the capture pad and the openings over the dielectric layer.

Abstract: A chip identification for organic laminate packaging and methods of manufacture is provided. The method includes forming a material on a wafer which comprises a plurality of chips. The method further includes modifying the material to provide a unique identification for each of the plurality of chips on the wafer. The organic laminate structure includes a chip with a device and a material placed on the chip which is modified to have a unique identification mark for the chip.

Abstract: Disclosed are a method for metallization during semiconductor wafer processing and the resulting structures. In this method, a passivation layer is patterned with first openings aligned above and extending vertically to metal structures below. A mask layer is formed and patterned with second openings aligned above the first openings, thereby forming two-tier openings extending vertically through the mask layer and passivation layer to the metal structures below. An electrodeposition process forms, in the two-tier openings, both under-bump pad(s) and additional metal feature(s), which are different from the under-bump pad(s) (e.g., a wirebond pad; a final vertical section of a crackstop structure; and/or a probe pad). Each under-bump pad and additional metal feature initially comprises copper with metal cap layers thereon.

Abstract: A metal-insulator-metal (MIM) capacitor using barrier layer metallurgy and methods of manufacture are disclosed. The method includes forming a bottom plate of a metal-insulator-metal (MIM) capacitor and a bonding pad using a single masking process. The method further includes forming a MIM dielectric on the bottom plate. The method further includes forming a top plate of the MIM capacitor on the MIM dielectric. The method further includes forming a solder connection on the bonding pad.

Abstract: A test wafer is disclosed with a first side configured to have integrated circuits formed thereon and a second side with a test structure formed thereon. The test wafer can include electrical test structures embedded in the second side of the wafer. An electrical test of the test wafer can be performed after handling by a tool used in a wafer manufacturing process to determine if the tool caused a defect on the second side of the wafer. The test structure can include a blanket layer disposed on the second side of the wafer. The test wafer can then be exposed to a wet etch and inspected thereafter for the presence of an ingress path caused from the etch chemistry. The presence of an ingress path is an indication that the tool used prior to the wet etch caused a defect in the wafer.

Abstract: A chip identification for organic laminate packaging and methods of manufacture is provided. The method includes forming a material on a wafer which comprises a plurality of chips. The method further includes modifying the material to provide a unique identification for each of the plurality of chips on the wafer. The organic laminate structure includes a chip with a device and a material placed on the chip which is modified to have a unique identification mark for the chip.

Abstract: A three dimensional integrated circuit (3D-IC) structure, method of manufacturing the same and design structure thereof are provided. The 3D-IC structure includes two chips having a dielectric layer, through substrate vias (TSVs) and pads formed on the dielectric layer. The dielectric layer is formed on a bottom surface of each chip. Pads are electrically connected to the corresponding TSVs. The chips are disposed vertically adjacent to each other. The bottom surface of a second chip faces the bottom surface of a first chip. The pads of the first chip are electrically connected to the pads of the second chip through a plurality of conductive bumps. The 3D-IC structure further includes a thermal via structure vertically disposed between the first chip and the second chip and laterally disposed between the corresponding conductive bumps. The thermal via structure has an upper portion and a lower portion.

Abstract: A controlled collapse chip connection (C4) method and integrated circuit structure for lead (Pb)-free solder balls with stress relief to the underlying insulating layers of the integrated circuit chip by disposing soft thick insulating cushions beneath the solder balls and connecting the metallization of the integrated circuit out-of-contact of the cushions but within the pitch of the solder balls.

Abstract: Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.

Abstract: A method of reducing white bump formation and dielectric cracking under controlled collapse chip connections (C4s). The method comprises fabricating a substrate having a plurality of metallization layers, one or more of the layers is of low k dielectric material. The substrate includes a plurality of attachment pads for the C4s. The fabricating comprises selectively forming at least a portion of the substrate with metal fill having a higher Young's modulus of elasticity than any of the one or more layers of low k dielectric material in portions of the substrate located beneath at least some of the attachment pads.

Abstract: A structure and method for producing the same is disclosed. The structure includes an organic passivation layer with solids suspended therein. Preferential etch to remove a portion of the organic material and expose portions of such solids creates enhanced surface roughness, which provides a significant advantage with respect to adhesion of that passivation layer to the packaging underfill material.

Abstract: Solder bump connections and methods for fabricating solder bump connections. The method includes forming a layer stack containing first and second conductive layers, forming a dielectric passivation layer on a top surface of the second conductive layer, and forming a via opening extending through the dielectric passivation layer to the top surface of the second conductive layer. The method further includes forming a conductive plug in the via opening. The solder bump connection includes first and second conductive layers comprised of different conductors, a dielectric passivation layer on a top surface of the second conductive layer, a via opening extending through the dielectric passivation layer to the top surface of the second conductive layer, and a conductive plug in the via opening.