Abstract: Semiconductor package s and methods of forming the same are disclosed. The semiconductor package includes a chip, a redistribution circuit structure and a UBM pattern. The redistribution circuit structure is disposed over and electrically connected to the chip and includes a topmost conductive pattern. The UBM pattern is disposed over and electrically connected to the topmost conductive pattern, wherein the UBM pattern includes a set of vias and a pad on the set of vias, wherein the vias are arranged in an array and electrically connected to the pad and the topmost conductive pattern.

Abstract: A method for fabricating an integrated fan-out package is provided. The method includes the following steps. A plurality of conductive posts are placed in apertures of a substrate. A carrier having an adhesive thereon is provided. The conductive posts are transferred to the carrier in a standing orientation by adhering the conductive posts in the apertures to the adhesive. An integrated circuit component is mounted onto the adhesive having the conductive posts adhered thereon. An insulating encapsulation is formed to encapsulate the integrated circuit component and the conductive posts. A redistribution circuit structure is formed on the insulating encapsulation, the integrated circuit component, and the conductive posts, wherein the redistribution circuit structure is electrically connected to the integrated circuit component and the conductive posts. The carrier is removed. At least parts of the adhesive are removed (e.g. patterned or entirely removed) to expose surfaces of the conductive posts.

Abstract: A method for forming through vias comprises the steps of forming a dielectric layer over a package and forming an RDL over the dielectric layer, wherein forming the RDL includes the steps of forming a seed layer, forming a first patterned mask over the seed layer, and performing a first metal plating. The method further includes forming through vias on top of a first portion of the RDL, wherein forming the through vias includes forming a second patterned mask over the seed layer and the RDL, and performing a second metal plating. The method further includes attaching a chip to a second portion of the RDL, and encapsulating the chip and the through vias in an encapsulating material.

Abstract: A method includes forming a through-via from a first conductive pad of a first device die. The first conductive pad is at a top surface of the first device die. A second device die is adhered to the top surface of the first device die. The second device die has a surface conductive feature. The second device die and the through-via are encapsulated in an encapsulating material. The encapsulating material is planarized to reveal the through-via and the surface conductive feature. Redistribution lines are formed over and electrically coupled to the through-via and the surface conductive feature.

Abstract: A device is provided, including: a first device package including: a first redistribution structure including a first redistribution line and a second redistribution line; a die on the first redistribution structure; a first via coupled to a first side of the first redistribution line; a second via coupled to a first side of the second redistribution line and extending through the second redistribution line; an encapsulant surrounding the die, the first via, and the second via; and a second redistribution structure over the encapsulant, the second redistribution structure electrically connected to the die, the first via, and the second via; a first conductive connector coupled to a second side of the first redistribution line, the first conductive connector disposed along a different axis than a longitudinal axis of the first via; and a second conductive connector coupled to a second side of the second redistribution line, the second conductive connector disposed along a longitudinal axis of the second via.

Abstract: A bump-on-trace (BOT) interconnection in a package and methods of making the BOT interconnection are provided. An embodiment BOT interconnection comprises a landing trace including a distal end, a conductive pillar extending at least to the distal end of the landing trace; and a solder feature electrically coupling the landing trace and the conductive pillar. In an embodiment, the conductive pillar overhangs the end surface of the landing trace. In another embodiment, the landing trace includes one or more recesses for trapping the solder feature after reflow. Therefore, a wetting area available to the solder feature is increased while permitting the bump pitch of the package to remain small.

Abstract: A device is provided, including: a first device package including: a first redistribution structure including a first redistribution line and a second redistribution line; a die on the first redistribution structure; a first via coupled to a first side of the first redistribution line; a second via coupled to a first side of the second redistribution line and extending through the second redistribution line; an encapsulant surrounding the die, the first via, and the second via; and a second redistribution structure over the encapsulant, the second redistribution structure electrically connected to the die, the first via, and the second via; a first conductive connector coupled to a second side of the first redistribution line, the first conductive connector disposed along a different axis than a longitudinal axis of the first via; and a second conductive connector coupled to a second side of the second redistribution line, the second conductive connector disposed along a longitudinal axis of the second via.

Abstract: A method includes forming a first through-via from a first conductive pad of a first device die, and forming a second through-via from a second conductive pad of a second device die. The first and second conductive pads are at top surfaces of the first and the second device dies, respectively. The first and the second conductive pads may be used as seed layers. The second device die is adhered to the top surface of the first device die. The method further includes encapsulating the first and the second device dies and the first and the second through-vias in an encapsulating material, with the first and the second device dies and the first and the second through-vias encapsulated in a same encapsulating process. The encapsulating material is planarized to reveal the first and the second through-vias. Redistribution lines are formed to electrically couple to the first and the second through-vias.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive feature and a protection layer surrounding the semiconductor die. The chip package also includes a dielectric layer arranged over the semiconductor die and the protection layer and partially covering the conductive feature. The conductive feature is arranged accessibly from the protection layer and the dielectric layer. The chip package further includes a conductive layer penetrating through the dielectric layer and electrically connected to the conductive feature of the semiconductor die. The conductive feature has a first portion covered by the dielectric layer and a second portion accessibly exposed from the dielectric layer, and the second portion has a surface roughness greater than that of the first portion.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate including a plurality of conductive traces and a recess filled with a conductive material electrically coupled to at least one of the plurality of conductive traces. The semiconductor structure also includes semiconductor chip. The semiconductor chip includes a plurality of conductive pads correspondingly electrically connected with the plurality of conductive traces through a plurality of conductive bumps. A height of each of the plurality of conductive bumps is determined by a minimum distance between the plurality of conductive pads and the corresponding conductive traces thereof.

Abstract: A package component includes a dielectric layer and a metal pad over the dielectric layer. A plurality of openings is disposed in the metal pad. The first plurality of openings is separated from each other by portions of the metal pad, with the portions of the metal pad interconnected to form a continuous metal region.

Abstract: A pillar structure, and a method of forming, for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.

Abstract: Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices are disclosed. A method of forming a device includes forming a conductive trace over a first substrate, the conductive trace having first tapering sidewalls, forming a conductive bump over a second substrate, the conductive bump having second tapering sidewalls and a first surface distal the second substrate, and attaching the conductive bump to the conductive trace via a solder region. The solder region extends from the first surface of the conductive bump to the first substrate, and covers the first tapering sidewalls of the conductive trace. The second tapering sidewalls of the conductive bump are free of the solder region.

Abstract: A method for forming through vias comprises the steps of forming a dielectric layer over a package and forming an RDL over the dielectric layer, wherein forming the RDL includes the steps of forming a seed layer, forming a first patterned mask over the seed layer, and performing a first metal plating. The method further includes forming through vias on top of a first portion of the RDL, wherein forming the through vias includes forming a second patterned mask over the seed layer and the RDL, and performing a second metal plating. The method further includes attaching a chip to a second portion of the RDL, and encapsulating the chip and the through vias in an encapsulating material.

Abstract: A method includes forming a through-via from a first conductive pad of a first device die. The first conductive pad is at a top surface of the first device die. A second device die is adhered to the top surface of the first device die. The second device die has a surface conductive feature. The second device die and the through-via are encapsulated in an encapsulating material. The encapsulating material is planarized to reveal the through-via and the surface conductive feature. Redistribution lines are formed over and electrically coupled to the through-via and the surface conductive feature.

Abstract: A package includes a package substrate, which includes a middle layer selected from the group consisting of a core and a middle metal layer, a top metal layer overlying the middle layer, and a bottom metal layer underlying the middle layer. All metal layers overlying the middle layer have a first total metal density that is equal to a sum of all densities of all metal layers over the middle layer. All metal layers underlying the middle layer have a second total metal density that is equal to a sum of all densities of all metal layers under the middle layer. An absolute value of a difference between the first total metal density and the second total metal density is lower than about 0.1.

Abstract: A method includes forming a first through-via from a first conductive pad of a first device die, and forming a second through-via from a second conductive pad of a second device die. The first and second conductive pads are at top surfaces of the first and the second device dies, respectively. The first and the second conductive pads may be used as seed layers. The second device die is adhered to the top surface of the first device die. The method further includes encapsulating the first and the second device dies and the first and the second through-vias in an encapsulating material, with the first and the second device dies and the first and the second through-vias encapsulated in a same encapsulating process. The encapsulating material is planarized to reveal the first and the second through-vias. Redistribution lines are formed to electrically couple to the first and the second through-vias.

Abstract: A pillar structure, and a method of forming, for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die and a protection layer encapsulating the semiconductor die. The chip package also includes a conductive structure in the protection layer and separated from the semiconductor die by the protection layer. The chip package further includes an interconnection structure over the conductive structure and the protection layer. The interconnection structure has a protruding portion between the conductive structure and the semiconductor die, and the protruding portion extends into the protection layer.

Abstract: A method includes forming a through-via from a first conductive pad of a first device die. The first conductive pad is at a top surface of the first device die. A second device die is adhered to the top surface of the first device die. The second device die has a surface conductive feature. The second device die and the through-via are encapsulated in an encapsulating material. The encapsulating material is planarized to reveal the through-via and the surface conductive feature. Redistribution lines are formed over and electrically coupled to the through-via and the surface conductive feature.