Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive feature and a protection layer surrounding the semiconductor die. The chip package also includes a dielectric layer arranged over the semiconductor die and the protection layer and partially covering the conductive feature. The conductive feature is arranged accessibly from the protection layer and the dielectric layer. The chip package further includes a conductive layer penetrating through the dielectric layer and electrically connected to the conductive feature of the semiconductor die. The conductive feature has a first portion covered by the dielectric layer and a second portion accessibly exposed from the dielectric layer, and the second portion has a surface roughness greater than that of the first portion.

Abstract: Structures and formation methods of a chip package are provided. The method includes forming multiple conductive structures over a carrier substrate and disposing a semiconductor die over the carrier substrate. The method also includes disposing a mold over the carrier substrate. The method further includes forming a protection layer between the mold and the carrier substrate to surround the semiconductor die and the conductive structures. In addition, the method includes removing the mold.

Abstract: The present disclosure provides a semiconductor package, including a semiconductor die and a substrate having a first surface electrically coupled to the semiconductor die and a second surface opposing to the first surface. The first surface includes a core region having a plurality of landing pads and a periphery region surrounding the core region and having a plurality of landing traces. A pitch of the landing pads is from about 55 ?m to about 280 ?m. The semiconductor die includes a third surface facing the first surface of the substrate and a fourth surface opposing to the third surface. The third surface includes a plurality of elongated bump positioned correspondingly to the landing pads and the landing traces of the substrate, and the elongated bump includes a long axis and a short axis perpendicular to the long axis on a cross section thereof.

Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure includes a conductive structure formed in the trench and on the protection layer. The conductive structure is electrically connected to the conductive pad, and the conductive structure has a concave top surface, and the lowest point of the concave top surface is higher than the top surface of the protection layer.

Abstract: A semiconductor device has a top metal layer, a first passivation layer over the top metal layer, a first redistribution layer over the first passivation layer, a first polymer layer, and a first conductive via extending through the first polymer layer. The first polymer layer is in physical contact with the first passivation layer.

Abstract: A method for fabricating an integrated fan-out package is provided. The method includes the following steps. A plurality of conductive posts are placed in apertures of a substrate. A carrier having an adhesive thereon is provided. The conductive posts are transferred to the carrier in a standing orientation by adhering the conductive posts in the apertures to the adhesive. An integrated circuit component is mounted onto the adhesive having the conductive posts adhered thereon. An insulating encapsulation is formed to encapsulate the integrated circuit component and the conductive posts. A redistribution circuit structure is formed on the insulating encapsulation, the integrated circuit component, and the conductive posts, wherein the redistribution circuit structure is electrically connected to the integrated circuit component and the conductive posts. The carrier is removed. At least parts of the adhesive are removed (e.g. patterned or entirely removed) to expose surfaces of the conductive posts.

Abstract: A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

Abstract: A method includes forming a first through-via from a first conductive pad of a first device die, and forming a second through-via from a second conductive pad of a second device die. The first and second conductive pads are at top surfaces of the first and the second device dies, respectively. The first and the second conductive pads may be used as seed layers. The second device die is adhered to the top surface of the first device die. The method further includes encapsulating the first and the second device dies and the first and the second through-vias in an encapsulating material, with the first and the second device dies and the first and the second through-vias encapsulated in a same encapsulating process. The encapsulating material is planarized to reveal the first and the second through-vias. Redistribution lines are formed to electrically couple to the first and the second through-vias.

Abstract: A bump-on-trace interconnection structure utilizing a lower volume solder joint for joining a conductive metal pillar and a metal line trace includes a conductive metal pillar having a bonding surface having a width WP and a metal line trace, provided on a package substrate, having a top surface with a width WT, where WP is greater than WT. The solder joint is bonded to the bonding surface by wetting across the width WP and bonded predominantly only to the top surface of the metal line trace by wetting predominantly only to the top surface across the width WT.

Abstract: In some embodiments, the present disclosure relates to a method of integrated chip bonding. The method is performed by forming a metal layer on a substrate, and forming a solder layer on the metal layer. The solder layer is reflowed. The metal layer and the solder layer have sidewalls defining a recess that is at least partially filled by the solder layer during reflowing of the solder layer.

Abstract: A device package is provided. The device package includes a first die and a second die. A top surface of the first die is offset from a top surface of the second die in a direction that is parallel to a sidewall of the first die. A molding compound extends along sidewalls of the first die and the second die, where at least a portion of a top surface of the molding compound includes an inclined surface. A polymer layer contacts the top surface of the molding compound, the top surface of the first die, and the top surface of the second die. A top surface of the polymer layer is substantially level. A first conductive feature is in the polymer layer, where the first conductive feature is electrically connected to the first die.

Abstract: A method for fabricating an integrated fan-out package is provided. The method includes the following steps. A plurality of conductive posts are placed in apertures of a substrate. A carrier having an adhesive thereon is provided. The conductive posts are transferred to the carrier in a standing orientation by adhering the conductive posts in the apertures to the adhesive. An integrated circuit component is mounted onto the adhesive having the conductive posts adhered thereon. An insulating encapsulation is formed to encapsulate the integrated circuit component and the conductive posts. A redistribution circuit structure is formed on the insulating encapsulation, the integrated circuit component, and the conductive posts, wherein the redistribution circuit structure is electrically connected to the integrated circuit component and the conductive posts. The carrier is removed. At least parts of the adhesive are removed (e.g. patterned or entirely removed) to expose surfaces of the conductive posts.

Abstract: A package component includes a dielectric layer and a metal pad over the dielectric layer. A plurality of openings is disposed in the metal pad. The first plurality of openings is separated from each other by portions of the metal pad, with the portions of the metal pad interconnected to form a continuous metal region.

Abstract: A semiconductor device has a top metal layer, a first passivation layer over the top metal layer, a first redistribution layer over the first passivation layer, a first polymer layer, and a first conductive via extending through the first polymer layer. The first polymer layer is in physical contact with the first passivation layer.

Abstract: A method for fabricating an integrated fan-out package is provided. The method includes the following steps. A plurality of conductive posts are placed in apertures of a substrate. A carrier having an adhesive thereon is provided. The conductive posts are transferred to the carrier in a standing orientation by adhering the conductive posts in the apertures to the adhesive. An integrated circuit component is mounted onto the adhesive having the conductive posts adhered thereon. An insulating encapsulation is formed to encapsulate the integrated circuit component and the conductive posts. A redistribution circuit structure is formed on the insulating encapsulation, the integrated circuit component, and the conductive posts, wherein the redistribution circuit structure is electrically connected to the integrated circuit component and the conductive posts. The carrier is removed. At least parts of the adhesive are removed (e.g. patterned or entirely removed) to expose surfaces of the conductive posts.

Abstract: A package component includes a dielectric layer and a metal pad over the dielectric layer. A plurality of openings is disposed in the metal pad. The first plurality of openings is separated from each other by portions of the metal pad, with the portions of the metal pad interconnected to form a continuous metal region.

Abstract: In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure may have a first conductive structure and a second conductive structure arranged over a first substrate. A bump structure is arranged between the first conductive structure and a second substrate. A solder layer is configured to electrically couple the first conductive structure and the bump structure. The bump structure has a recess that is configured to reduce a protrusion of the solder layer in a direction extending from the first conductive structure to the second conductive structure.

Abstract: The present disclosure provides a method for manufacturing a semiconductor package. The method includes (1) determining a die warpage value under a predetermined temperature range; (2) determining a difference between a density of a top metal and a density of a bottom metal of a substrate according to the die warpage value; and (3) joining the die and the substrate under the predetermined temperature range. The top metal includes all metal layers overlying a middle layer, and the bottom metal includes all metal layers underlying the middle layer. The middle layer includes a core or a metal layer.

Abstract: Structures and formation methods of a chip package are provided. The method includes forming multiple conductive structures over a carrier substrate and disposing a semiconductor die over the carrier substrate. The method also includes disposing a mold over the carrier substrate. The method further includes forming a protection layer between the mold and the carrier substrate to surround the semiconductor die and the conductive structures. In addition, the method includes removing the mold.

Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure includes a conductive structure formed in the trench and on the protection layer. The conductive structure is electrically connected to the conductive pad, and the conductive structure has a concave top surface, and the lowest point of the concave top surface is higher than the top surface of the protection layer.