Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.

Abstract: A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

Abstract: A method for detecting defects in a GaN high electron mobility transistor is disclosed. The method includes steps of measuring a plurality of electrical characteristics of a GaN high electron mobility transistor, measuring the plurality of electrical characteristics after performing a deterioration test on the GaN high electron mobility transistor, irradiating the GaN high electron mobility transistor in turns with a plurality of light sources with different wavelengths and measuring the plurality of electrical characteristics after each irradiation of the GaN high electron mobility transistor by each of the plurality of light sources, and comparing changes of the plurality of electrical characteristics measured in the above steps to determine the defect location of the GaN high electron mobility transistor.

Abstract: A method for drying a wafer at room temperature includes a cleaning step, a reacting step and a pressure releasing step. The cleaning step includes putting a processing workpiece into a cleaning solvent. The reacting step includes putting the processing workpiece along with the cleaning solvent into a reaction chamber, implanting a supercritical fluid into the reaction chamber, and increasing a pressure of the reaction chamber to dissolve the cleaning solvent in the supercritical fluid. A critical temperature of the supercritical fluid is below room temperature. The pressure releasing step includes releasing the pressure of the reaction chamber and discharging the supercritical fluid together with the cleaning solvent out of the reaction chamber, after completely dissolving the cleaning solvent in the supercritical fluid.

Abstract: A p-GaN high electron mobility transistor is disclosed. The p-GaN high electron mobility transistor includes a substrate, a channel layer located on the substrate, a supply layer laminated on the channel layer, and a doped layer laminated on the supply layer. A doping concentration of the doped layer is gradually distributed, in which the doping concentration in a first doped region close to the supply layer is lower than a doping concentration in a second doped region distant from the supply layer. A gate electrode is located on the doped layer. A source electrode and a drain electrode are respectively electrically connected to the channel layer and the supply layer.

Abstract: A GaN high electron mobility transistor is disclosed. The GaN high electron mobility transistor includes a substrate, a buffer layer located on the substrate, a barrier layer laminated on the buffer layer, a channel layer laminated on the barrier layer, a supply layer laminated on the channel layer. The barrier layer has either a p-type semiconductor or a wide band gap material. A gate electrode is located on the supply layer. A source electrode and a drain electrode are electrically connected to the channel layer and the supply layer.

Abstract: A structure to increase the breakdown voltage of the high electron mobility transistor is provided to solve the problem of function loss under a high voltage state. The structure includes a substrate, a conducting layer located on the substrate, a gate insulating layer and an electric-field-dispersion layer. The upper portion of the conducting layer is an electron supply layer, and the lower portion of the conducting layer is an electron tunnel layer. The gate insulating layer is laminated on the electron supply layer. The electric-field-dispersion layer is laminated on the gate insulating layer. The dielectric constant of the electric-field-dispersion layer is smaller than that of the gate insulating layer. A gate electrode is located between the electric-field-dispersion layer and the gate insulating layer. A source and a drain electrodes are respectively electrically connected to the electric-field-dispersion layer, the gate insulating layer, the electron supply layer, and the electron tunnel layer.

Abstract: A gas sensor and a method for manufacturing the gas sensor are disclosed. The gas sensor includes a substrate, a heating member disposed on the substrate, a sensing layer covering the heating member, and two electrodes respectively electrically connected to the sensing layer. The sensing layer includes a doping element with an electronegativity greater than 2. The method for manufacturing the gas sensor includes a deposition process stacking a heating member, a sensing layer, and two electrodes on a substrate by deposition, and a doping process introducing a doping gas when depositing the sensing layer.

Abstract: A resistive random access memory and an initialization method thereof are disclosed. The initialization method includes irradiating a memory device with an electromagnetic wave and manipulating a switching voltage to switch the memory device between a high resistance state and a low resistance state. The electromagnetic wave has a frequency of above 1016 Hertz. The resistive random access memory includes a plurality of memory devices and a switching circuit respectively electrically connected to the plurality of memory devices. Each of the plurality of memory devices has a resistance-changing layer and two electrode layers respectively located on an upper surface and a lower surface of the resistance-changing layer.

Abstract: A thin film transistor is used to solve a problem of low process efficiency of the conventional thin film transistor in preventing hydrogen diffusion. The thin film transistor includes a substrate, multilayer thin films laminated on the substrate, and at least one fluorine-containing thin film laminated in substitution for the multilayer thin films. Each of the multilayer thin films is a gate insulating layer, an active layer, a buffer layer, and a dielectric layer or a protective layer. Each of the at least one fluorine-containing thin film is a fluorine-doped insulating layer, a fluorine-doped active layer, a fluorine-doped buffer layer, and a fluorine-doped dielectric layer or a fluorine-doped protective layer. The invention further discloses a method for manufacturing the thin film transistor.

Abstract: A method for processing a biomedical material using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. The biomedical material in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

Abstract: A structure to increase the breakdown voltage of the high electron mobility transistor is provided to solve the problem of function loss under a high voltage state. The structure includes a substrate, a conducting layer located on the substrate, a gate insulating layer and an electric-field-dispersion layer. The upper portion of the conducting layer is an electron supply layer, and the lower portion of the conducting layer is an electron tunnel layer. The gate insulating layer is laminated on the electron supply layer. The electric-field-dispersion layer is laminated on the gate insulating layer. The dielectric constant of the electric-field-dispersion layer is smaller than that of the gate insulating layer. A gate electrode is located between the electric-field-dispersion layer and the gate insulating layer. A source and a drain electrodes are respectively electrically connected to the electric-field-dispersion layer, the gate insulating layer, the electron supply layer, and the electron tunnel layer.

Abstract: A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

Abstract: In some examples, a computing device may include a swipeable portion with a material having a textured surface. A primary sensor may receive motion-generated data when a swipe gesture is performed on the swipeable portion and send primary data to an embedded controller (EC). The primary sensor may be mounted between two layers of vibration damping material. The EC may filter the primary data to create filtered data. The EC may determine that the filtered data satisfies one or more criteria to determine that the swipe gesture was performed. In response, the EC may perform one or more associated actions, such as determining and displaying a battery level of a battery of the computing device.

Abstract: In some examples, a computing device may include a swipeable portion with a material having a textured surface. A primary sensor may receive motion-generated data when a swipe gesture is performed on the swipeable portion and send primary data to an embedded controller (EC). The primary sensor may be mounted between two layers of vibration damping material. The EC may filter the primary data to create filtered data. The EC may determine that the filtered data satisfies one or more criteria to determine that the swipe gesture was performed. In response, the EC may perform one or more associated actions, such as determining and displaying a battery level of a battery of the computing device.

Abstract: A method for bonding a first component to a second component includes placing the first and second components in a cavity. Each of the first and second components has a bonding portion, and the bonding portion of the first component faces the bonding portion of the second component. A supercritical fluid is then introduced into the cavity with a temperature of 40-400° C. and a pressure of 1,500-100,000 psi, and a pressure of 4-100,000 psi is applied on both the first and second components, assuring the bonding portion of the first component bond to the bonding portion of the second component. Moreover, a method for separating a first component from a second component includes placing a composite in a cavity. The composite includes the first component, the second component and a connecting layer by which the first component joins to the second component. The supercritical is then introduced into the cavity.

Abstract: A reaction method with a homogeneous-phase supercritical fluid includes introducing a first fluid into a mixing chamber. A mass is less than or equal to that can be absorbed by the molecular sieve component, totally absorbing the first fluid by the molecular sieve component. A second fluid is introduced into the mixing chamber with a mass being greater than that can be absorbed by the molecular sieve component. A temperature and a pressure in the mixing chamber are adjusted to a critical temperature and a critical pressure of the second fluid, respectively, releasing the first fluid in supercritical phase from the molecular sieve component into the mixing chamber, followed by homogeneously mixing with the second fluid in supercritical phase in the mixing chamber to obtain a homogeneous-phase mixing fluid. The homogeneous-phase mixing fluid is then introduced into a reaction chamber connected to the mixing chamber.

Abstract: A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.