Patents by Inventor Ting Chen
Ting Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240301061Abstract: The present disclosure provides for multi-specific antibodies and antigen-binding fragments thereof that bind to human CLDN6 and CD3, a pharmaceutical composition comprising said antibody or antigen-binding fragments thereof, and use of the multi-specific antibody or antigen-binding fragments thereof or the composition for treating a disease, such as cancer.Type: ApplicationFiled: March 28, 2024Publication date: September 12, 2024Applicant: BeiGene Switzerland GmbHInventors: Zhitao WAN, Dan LI, Xiaoyan TANG, Yun CHEN, Ming LEI, Ting SHAO, Liu XUE, Yao DING, Ruyue JI, Qiming XU, Hui GUO
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Publication number: 20240304705Abstract: A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.Type: ApplicationFiled: May 16, 2024Publication date: September 12, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Wei-Chih Chuang, Chia-Jong Liu, Kuang-Hsiu Chen, Chung-Ting Huang, Chi-Hsuan Tang, Kai-Hsiang Wang, Bing-Yang Jiang, Yu-Lin Cheng, Chun-Jen Chen, Yu-Shu Lin, Jhong-Yi Huang, Chao-Nan Chen, Guan-Ying Wu
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Publication number: 20240305162Abstract: A damper device and an electronic apparatus are provided. The damper device includes a first holder, a first damper component and a first gel. The first damper component includes a first protrusion part and a first bar part. The first protrusion part includes a first surface. The first bar part includes a first free end and a first fixed end. The first protrusion part is fixed on the first free end, the first fixed end is fixed on the first holder and the first surface protrudes outward from the first free end. The first free end and the first protrusion part are inserted into the first gel, and the first gel moves along the radial direction of the first bar part relative to the first bar part.Type: ApplicationFiled: November 7, 2023Publication date: September 12, 2024Inventors: Chia-Ching HSU, Fu Yuan WU, Shang Yu HSU, Shao Chung CHANG, Meng Ting LIN, Chun Kai CHEN
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Patent number: 12087590Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.Type: GrantFiled: December 15, 2022Date of Patent: September 10, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Hao Kung, Hui-Chi Huang, Kei-Wei Chen, Yen-Ting Chen
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Patent number: 12087619Abstract: A method for manufacturing a semiconductor device, including the following steps. A plurality of first vias are formed in a first dielectric layer in a memory cell region and a peripheral region. A surface treatment is performed on the plurality of first vias to form a plurality of sacrificial layers. The plurality of sacrificial layers are removed to form a plurality of recesses. A plurality of protective layers are formed in the plurality of recesses. A memory device is formed on the first dielectric layer in the memory cell region. A second dielectric layer is formed on the memory device and on the first dielectric layer. A plurality of second vias is formed in the second dielectric layer in the memory cell region and the peripheral region to electrically connect the memory device in the memory cell region and the first vias in the peripheral region, respectively.Type: GrantFiled: December 22, 2022Date of Patent: September 10, 2024Assignee: Winbond Electronics Corp.Inventors: Chi-Ching Liu, Yu-Ting Chen, Chang-Tsung Pai, Shun-Li Lan, Yen-De Lee, Chih-Jung Ni
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Patent number: 12087641Abstract: A method for forming a semiconductor structure is provided. The method includes forming first and second fin structures, wherein each of the first and the second fin structurez include first semiconductor layers and second semiconductor layers alternatingly stacked, and forming a first mask structure to cover the second fin structure. The first mask structure includes a first dielectric layer and a second dielectric layer over the first mask structure, and the first dielectric layer and the second dielectric layer are made of different materials. The method also includes forming a first source/drain feature in the first fin structure, removing the first mask structure, forming a second source/drain feature in the second fin structure, removing the first semiconductor layers of the first fin structure and the second fin structure, thereby forming first nanostructures and second nanostructures, and forming a gate stack around the first and second nanostructures.Type: GrantFiled: April 22, 2021Date of Patent: September 10, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chung-Ting Ko, Wen-Ju Chen, Tai-Chun Huang
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Patent number: 12087837Abstract: In an exemplary aspect, the present disclosure is directed to a device. The device includes a fin-shaped structure extending lengthwise along a first direction. The fin-shaped structure includes a stack of semiconductor layers arranged one over another along a second direction perpendicular to the first direction. The device also includes a first source/drain feature of a first dopant type on the fin-shaped structure and spaced away from the stack of semiconductor layers. The device further includes a second source/drain feature of a second dopant type on the fin-shaped structure over the first source/drain feature along the second direction and connected to the stack of semiconductor layers. The second dopant type is different from the first dopant type. Furthermore, the device additionally includes an isolation feature interposing between the first source/drain feature and the second source/drain features.Type: GrantFiled: July 14, 2021Date of Patent: September 10, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ting-Yeh Chen, Yen-Ting Chen, Wei-Yang Lee, Chia-Pin Lin
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Publication number: 20240297638Abstract: Disclosed is an electronic device including a tunable element, a first power supply circuit, and a second power supply circuit. The first power supply circuit and the second power supply circuit are electrically connected to the tunable element. The first power supply circuit drives the tunable element during a first time period. The second power supply circuit drives the tunable element during a second time period.Type: ApplicationFiled: May 14, 2024Publication date: September 5, 2024Applicant: Innolux CorporationInventors: Yi-Hung Lin, Chung-Le Chen, Shuo-Ting Hong, Yu-Ti Huang, Yu-Hsiang Chiu, Nai-Fang Hsu
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Publication number: 20240297053Abstract: A method includes attaching an integrated circuit die adjacent to a first substrate, the integrated circuit die comprising: an active device in a second substrate; a pad adjacent to the second substrate; and a first dielectric layer adjacent to the second substrate, the first dielectric layer comprising a polyimide with an ester group; forming an encapsulant around the integrated circuit die; and removing the first dielectric layer.Type: ApplicationFiled: May 6, 2024Publication date: September 5, 2024Inventors: Ting-Chen Tseng, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
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Publication number: 20240295766Abstract: A display module includes a back plate, a light guide plate, a rubber frame and a display panel, the light guide plate is fixed on a bearing surface, a connecting line between two end portions of the bearing surface forms a first curve. The first curve includes a circular arc segment and a transition curve segment, and bends in a direction away from the display panel; the circular arc segment is located at the middle, at least one end of the circular arc segment is provided with the transition curve segment; the transition curve segment is located at a first position, the first position being a position of the bearing surface opposite to a second position, the second position being a position where light leaks from the display panel, the radius of curvature of the transition curve increases along a direction close to an end portion of the first curve.Type: ApplicationFiled: April 29, 2022Publication date: September 5, 2024Applicants: FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Han Zhang, Shuwen Lai, Kai Diao, Long Hu, Liangliang Ren, Yuhang Lin, Lian Fang, Cheungkun Liu, Dingjie Zheng, Zhijie Guo, Zhiying Chen, Ting Cui
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Publication number: 20240294614Abstract: Provided is an anti-Henipavirus monoclonal antibody having broad spectrum neutralization activity, wherein the antibody comprises a macaque variable region and a human constant region. The antibody of the present invention has good binding activity to both Nipah virus glycoprotein G and Hendra virus glycoprotein G, can effectively neutralize Nipahpseudovirus and Hendra pseudovirus, and can be used for preparing drugs for treating Henipavirus diseases.Type: ApplicationFiled: June 27, 2021Publication date: September 5, 2024Applicant: ACADEMY OF MILITARY MEDICAL SCIENCE, PLAInventors: Wei Chen, Changming Yu, Yujiao Liu, Pengfei Fan, Guanying Zhang, Yaohui Li, Jianmin Li, Xiangyang Chi, Meng Hao, Ting Fang, Yunzhu Dong, Xiaohong Song, Yi Chen, Shuling Liu
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Publication number: 20240297143Abstract: A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.Type: ApplicationFiled: May 3, 2024Publication date: September 5, 2024Inventors: CHIH-YUAN CHIU, SHIH-YEN CHEN, CHI-CHUN PENG, HONG-KUN CHEN, HUI-TING LIN
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Patent number: 12076840Abstract: The invention relates to a power tool that can be held with one hand for reversing, comprising: a casing having a grip part and a manipulation port; a driving device having a control member; the control member is capable of controlling an actuation direction of the driving device; a power source disposed below the driving device and capable of driving the driving device; a reversing assembly disposed at a periphery of the power source and having a reversing member; the reversing member controls the control member to generate changes of displacement, a driving direction of the driving device is changed by action of turning the reversing assembly that is away from the driving device, and there is an appropriate manipulating distance between the grip part and the manipulation port, so that a user is capable of manipulating by holding and reversing the power tool with one hand at a same position.Type: GrantFiled: May 27, 2022Date of Patent: September 3, 2024Assignee: TECHWAY INDUSTRIAL CO., LTD.Inventors: Fu-Hsiang Chung, Wei-Ting Chen, Zong Hua Li, Kai Chien Yang
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Patent number: 12078528Abstract: Systems, and methods for automatically identifying an underground optical fiber cable length from DFOS systems in real time and pair it with GPS coordinates that advantageously eliminate the need for in-field inspection/work by service personnel to make such real-time distance/location determinations. As such, inefficient, error-prone and labor-intensive prior art methods are rendered obsolete. Operationally, our method disclosure involves driving vehicles including GPS to generate traffic patterns and automatically mapping traffic trajectory signals from a deployed buried fiber optic cable to locate geographic location(s) of the buried fiber optic cable. Traffic patterns are automatically recognized; slack in the fiber optic cable is accounted for; location of traffic lights and other traffic control devices/structures may be determined; and turns in the fiber optic cable may likewise be determined.Type: GrantFiled: July 20, 2022Date of Patent: September 3, 2024Assignee: NEC CorporationInventors: Ming-Fang Huang, Shaobo Han, Yuheng Chen, Milad Salemi, Ting Wang
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Patent number: 12077417Abstract: An embedded bionic winch for sampling and exploration of a polar sub-glacial lake, including an actuating chamber, a power chamber, a transition chamber, a sensor chamber, a cable arranging chamber and a slip ring chamber, where the actuating chamber, the power chamber, the transition chamber, the sensor chamber, the cable arranging chamber and the slip ring chamber are arranged in sequence, and are coaxially connected; the power chamber provides a power for the winch, and realizes sealing of motors located therein under water with a certain depth; the transition chamber realizes a power transmission between the power chamber and the cable arranging chamber; the sensor chamber is used for mounting of a tension sensor; the cable arranging chamber realizes retraction and release of a cable through the precise cooperation of a drum and a lead screw, and the slip ring chamber contains a slip ring.Type: GrantFiled: May 26, 2021Date of Patent: September 3, 2024Assignee: JILIN UNIVERSITYInventors: Youhong Sun, Jianhua Wang, Pavel Talalay, Jixin Wang, Tianlong Lei, Zhigang Wang, Xiaopeng Fan, Nan Zhang, Bing Li, Da Gong, Rusheng Wang, Yanji Chen, Ting Wang
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Patent number: 12082421Abstract: A semiconductor device includes a bottom electrode, a top electrode, a sidewall spacer, and a data storage element. The sidewall spacer is disposed aside the top electrode. The data storage element is located between the bottom electrode and the top electrode, and includes a ferroelectric material. The data storage element has a peripheral region which is disposed beneath the sidewall spacer and which has at least 60% of ferroelectric phase. A method for manufacturing the semiconductor device and a method for transforming a non-ferroelectric phase of a ferroelectric material to a ferroelectric phase are also disclosed.Type: GrantFiled: May 26, 2023Date of Patent: September 3, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu
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Publication number: 20240289565Abstract: An information handling system has a SIM card slot that accepts a micro SIM card and also accepts a nano SIM card when inserted in an adapter having an outer perimeter of a micro SIM card. The adapter holds contact pads of the nano SIM card in alignment with spring contacts of SIM card socket. When the adapter is inserted into the SIM card socket without a nano SIM card, a contact cover coupled to an eject member has an opening through which spring contacts extend against contact pads, and when the eject member is pressed inward to eject the SIM card adapter, the contact cover moves inward to press down on the spring contacts so that the SIM card adapter is kept clear of the spring contact through ejection.Type: ApplicationFiled: February 24, 2023Publication date: August 29, 2024Applicant: Dell Products L.P.Inventors: Chia-Ting Hu, Chun-Po Chen, Bo-Wei Chu
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Publication number: 20240284846Abstract: A method for obtaining regenerated seedlings of Brassica campestris L. ssp. chinensis from embryonic tip tissues, including the following steps. A seed is inoculated to a germination medium for dark culture for 60 h. The testa, root tip, two cotyledons and middle growing point of the resultant germinated seed are removed, and an embryonic tip with a length of 3-5 mm is retained as an explant. The explant is sequentially subjected to low-temperature pre-culture in a pre-culture medium for 36 h, room-temperature shaking culture in a liquid bud induction culture medium for 10 min, and bud induction culture in a bud induction culture medium for 20 d. A regenerated plant with 5-6 leaves is transferred to a rooting medium for rooting culture for about 2 weeks, and a well-rooted plant is collected, and subjected to hardening and transplantation into a filed.Type: ApplicationFiled: April 30, 2024Publication date: August 29, 2024Inventors: Guohu CHEN, Qian YIN, Ting LI, Chenggang WANG, Xiaoyan TANG, Ying WANG, Xueqing LIU, Hongwei WEN, Siwen WU
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Publication number: 20240290711Abstract: The present disclosure provides an electronic device including a conductive element, a first insulating layer, an extending element, and a second insulating layer disposed on a substrate. At least a portion of the first insulating layer is located between the conductive element and the extending element. The second insulating layer is disposed on the conductive element and the extending element. In a cross-sectional view, a thickness of the first insulating layer is different from a thickness of the second insulating layer. In a top view, the extending element has a first portion extending to an edge of the substrate, the extending element has a second portion connecting the first portion and disposed between the first portion and the conductive element, and the first minimum width of the first portion is less than the second minimum width of the second portion.Type: ApplicationFiled: May 7, 2024Publication date: August 29, 2024Applicant: InnoLux CorporationInventors: Chiu-Yuan Huang, Pei-Chieh Chen, Yu-Ting Liu, Tsung-Yeh Ho
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Patent number: D1041657Type: GrantFiled: June 13, 2023Date of Patent: September 10, 2024Assignee: BIOGEND THERAPEUTICS CO., LTD.Inventors: Chao-Ping Chen, Po-Wei Lee, Shih-Ting Hsu