Patents by Inventor Ting-Chun Wang

Ting-Chun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130207098
    Abstract: A semiconductor device including a first wafer assembly having a first substrate and a first oxide layer over the first substrate. The semiconductor device further includes a second wafer assembly having a second substrate and a second oxide layer over the second substrate. The first oxide layer and the second oxide layer are bonded together by van der Waals bonds or covalent bonds. A method of bonding a first wafer assembly and a second wafer assembly including forming a first oxide layer over a first substrate. The method further includes forming a second oxide layer over a second wafer assembly. The method further includes forming van der Waals bonds or covalent bonds between the first oxide layer and the second oxide layer.
    Type: Application
    Filed: February 10, 2012
    Publication date: August 15, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tung-Ti YEH, Chung-Yi HUANG, Ya Wen WU, Hui-Mei JAO, Ting-Chun WANG, Shiu-Ko JiangJian, Chia-Hung CHUNG
  • Publication number: 20130154060
    Abstract: A wafer including a substrate, a dielectric layer over the substrate, and a conductive layer over the dielectric layer is disclosed. The substrate has a main portion. A periphery of the dielectric layer and the periphery of the main portion of the substrate are separated by a first distance. A periphery of the conductive layer and the periphery of the main portion of the substrate are separated by a second distance. The second distance ranges from about a value that is 0.5% of a diameter of the substrate less than the first distance to about a value that is 0.5% of the diameter greater than the first distance.
    Type: Application
    Filed: December 16, 2011
    Publication date: June 20, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tung-Ti YEH, Wu-Chang LIN, Chung-Yi HUANG, Ya Wen WU, Hui-Mei JAO, Ting-Chun WANG, Chia-Hung CHUNG
  • Publication number: 20120326312
    Abstract: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
    Type: Application
    Filed: June 24, 2011
    Publication date: December 27, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Ting-Chun Wang, Szu-An Wu
  • Publication number: 20090265484
    Abstract: A method for enhancing USB transmission rate is disclosed. The method produces a second packet before receiving a callback signal corresponding to a first packet, thereby reducing the waiting time for receiving the callback signal and thus enhancing USB transmission rate.
    Type: Application
    Filed: December 19, 2008
    Publication date: October 22, 2009
    Applicant: RALINK TECHNOLOGY CORP.
    Inventors: Cheng-Lung Tsai, Ting-Chun Wang, Yue-Lang Tang
  • Publication number: 20090193152
    Abstract: An external device includes a controller, a connector, a function circuit, and a storage device. The storage device stores firmware and an image file. The image file includes an installation program and a driver. The external device is coupled to a host via the connector. The firmware can drive the controller to generate a virtual optical disc drive in the host and load the image file to the virtual optical disc drive so as to start the installation program. When the host does not have the driver, the installation program can install the driver in the host. When the host has the driver, the host can drive the function circuit to work.
    Type: Application
    Filed: November 3, 2008
    Publication date: July 30, 2009
    Inventors: Ting-Chun Wang, Jui-Chu Peng, Kuo-Pin Chiou
  • Patent number: 7304728
    Abstract: A novel test device and method for calibrating the alignment of a laser beam emitted from a laser metrology tool with respect to a target area on a substrate. The test device includes a laser-sensitive material having a calibration pattern that includes a target point. When the tool is properly adjusted, the laser beam strikes the target point and is released to production. If the laser beam misses the target point, the tool is re-adjusted and re-tested until the laser beam strikes the target point.
    Type: Grant
    Filed: September 15, 2004
    Date of Patent: December 4, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Tzung Chang, Yu-Ku Lin, Shih-Ho Lin, Kei-Wei Chen, Ting-Chun Wang, Ching-Hwan Su, Ying-Lang Wang
  • Publication number: 20060055928
    Abstract: A novel test device and method for calibrating the alignment of a laser beam emitted from a laser metrology tool with respect to a target area on a substrate. The test device includes a laser-sensitive material having a calibration pattern that includes a target point. When the tool is properly adjusted, the laser beam strikes the target point and is released to production. If the laser beam misses the target point, the tool is re-adjusted and re-tested until the laser beam strikes the target point.
    Type: Application
    Filed: September 15, 2004
    Publication date: March 16, 2006
    Inventors: Shih-Tzung Chang, Yu-Ku Lin, Shih-Ho Lin, Kei-Wei Chen, Ting-Chun Wang, Ching-Hwan Su, Ying-Lang Wang
  • Patent number: 6985222
    Abstract: A system and method for detecting chamber leakage by measuring the reflectivity of an oxidized thin film. In a preferred embodiment, a method of detecting leaks in a chamber includes providing a first monitor workpiece, placing the first monitor workpiece in the chamber, and forming at least one film on the first monitor workpiece. The reflectivity of the least one film of the first monitor workpiece is measured, wherein the reflectivity indicates whether there are leaks in the at least one seal of the chamber. In another embodiment, the method includes providing a second monitor workpiece, placing the second monitor workpiece in the chamber, and forming at least one film on the second monitor workpiece. The reflectivity of the at least one film of the second monitor workpiece is measured, and the second monitor workpiece film reflectivity is compared to the first monitor workpiece film reflectivity.
    Type: Grant
    Filed: April 25, 2003
    Date of Patent: January 10, 2006
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsi-Kuei Cheng, Chu-Chang Chen, Ting-Chun Wang, Szu-An Wu, Ying-Lang Wang, Hsien-Ping Feng
  • Patent number: 6863491
    Abstract: A new and improved wafer support for supporting wafers in a process chamber such as an edge bead removal (EBR) chamber. The wafer support comprises multiple wafer support units each including a gripper block that engages an edge portion or bevel of the wafer. The gripper block is attached to an engaging and disengaging mechanism for selectively causing engagement of the gripper blocks with the wafer to support the wafer and disengagement of the gripper blocks from the wafer to release the wafer for removal of the wafer from the chamber. The gripper blocks contact little or none of the surface area on the patterned surface of the wafer to prevent or substantially reduce the formation of contact-induced defects on the wafer.
    Type: Grant
    Filed: January 8, 2003
    Date of Patent: March 8, 2005
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Hsi-Kuei Cheng, Chun-Tse Lin, Ting-Chun Wang, Yu-Ku Lin, Ying-Lang Wang
  • Patent number: 6828226
    Abstract: For 0.18 micron technology, it is common practice to use silicon oxynitride as an anti-reflective layer for defining the via etch patterns. It has however been found that, using current technology, residual particles of oxynitride get left behind. The present invention solves this problem by subjecting the surface from which the silicon oxynitride was removed to a high pressure rinse of an aqueous solution that includes a surfactant such as tetramethyl ammonium hydroxide or isopropyl alcohol. These surfactants serve to modify the hydrophobic behavior of the silicon oxynitride particles so that they no longer cling to the surface.
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: December 7, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company, Limited
    Inventors: Kei-Wei Chen, Kuo-Hsiu Wei, Yu-Kin Lin, Ting-Chun Wang, Ying-Lang Wang, Shih-Tzung Chang
  • Publication number: 20040212798
    Abstract: A system and method for detecting chamber leakage by measuring the reflectivity of an oxidized thin film. In a preferred embodiment, a method of detecting leaks in a chamber includes providing a first monitor workpiece, placing the first monitor workpiece in the chamber, and forming at least one film on the first monitor workpiece. The reflectivity of the least one film of the first monitor workpiece is measured, wherein the reflectivity indicates whether there are leaks in the at least one seal of the chamber. In another embodiment, the method includes providing a second monitor workpiece, placing the second monitor workpiece in the chamber, and forming at least one film on the second monitor workpiece. The reflectivity of the at least one film of the second monitor workpiece is measured, and the second monitor workpiece film reflectivity is compared to the first monitor workpiece film reflectivity.
    Type: Application
    Filed: April 25, 2003
    Publication date: October 28, 2004
    Inventors: Hsi-Kuei Cheng, Chu-Chang Chen, Ting-Chun Wang, Szu-An Wu, Ying-Lang Wang, Hsien-Ping Feng
  • Patent number: 6769959
    Abstract: A method and system is disclosed for reducing slurry usage in a chemical mechanical polishing operation utilizing at least one polishing pad thereof. Slurry can be intermittently supplied to a chemical mechanical polishing device. The slurry is generally flushed so that a portion of said slurry is trapped in a plurality of pores of at least one polishing pad associated with said chemical mechanical polishing device, wherein only a minimum amount of said slurry necessary is utilized to perform said chemical mechanical polishing operation, thereby reducing slurry usage and maintaining a consistent level of slurry removal rate performance and a decrease in particle defects thereof. The present invention thus discloses a method and system for intermittently delivering slurry to a chemical mechanical polishing device in a manner that significantly conserves slurry usage.
    Type: Grant
    Filed: January 15, 2002
    Date of Patent: August 3, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Kei-Wei Chen, Ting-Chun Wang, Shih-Tzung Chang, Yu-Ku Lin, Ying-Lang Wang, Ming-Wen Chen, Kuo-Hsiu Wei
  • Publication number: 20040147116
    Abstract: A new method is provided for polishing, using methods of Chemical Mechanical Polishing, of copper surfaces, particularly where these surface are adjacent to the surface of a layer of barrier material comprising TaN. The invention provides for reducing the chemical force early in the polishing process by adding DIW during the early polishing phase and for additional control of the chemical force during the polishing process by controlling the pH of the slurry applied during polishing, especially for polishing the interface between interconnect copper and barrier material TaN.
    Type: Application
    Filed: January 29, 2003
    Publication date: July 29, 2004
    Applicant: Taiwan Semiconductor Manufacturing Company
    Inventors: Kei-Wei Chen, Ting-Chun Wang, Kuo-Hsiu Wei, Yu-Ku Lin, Ying-Lang Wang
  • Publication number: 20040131460
    Abstract: A new and improved wafer support for supporting wafers in a process chamber such as an edge bead removal (EBR) chamber. The wafer support comprises multiple wafer support units each including a gripper block that engages an edge portion or bevel of the wafer. The gripper block is attached to an engaging and disengaging mechanism for selectively causing engagement of the gripper blocks with the wafer to support the wafer and disengagement of the gripper blocks from the wafer to release the wafer for removal of the wafer from the chamber. The gripper blocks contact little or none of the surface area on the patterned surface of the wafer to prevent or substantially reduce the formation of contact-induced defects on the wafer.
    Type: Application
    Filed: January 8, 2003
    Publication date: July 8, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsi-Kuei Cheng, Chun-Tse Lin, Ting-Chun Wang, Yu-Ku Lin, Ying-Lang Wang
  • Patent number: 6682605
    Abstract: An apparatus and a method for removing coating layers from the top of alignment marks on a wafer are described. The apparatus includes a cleaning chamber that is a cavity and a lid member suspended in the cavity, a wafer chuck that is rotatably mounted in the lid member for holding a wafer in an upside down position such that the alignment marks are facing downwardly, and at least two solvent dispensing arms mounted in an outer peripheral area of the lid member that are immediately adjacent to the chuck for dispensing a flow of solvent upwardly toward the active surface of the wafer when the wafer is held in a stationary position, each of the at least two solvent dispensing arms are positioned corresponding to a position of one of the alignment marks.
    Type: Grant
    Filed: January 7, 2002
    Date of Patent: January 27, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Aaron Cheng, Ting-Chun Wang, Yu-Ku Lin, Chun-Chang Chen, Yi-Lang Wang
  • Patent number: 6645825
    Abstract: An improved and new process for fabricating a planarized structure of shallow trench isolation (STI) embedded in a silicon substrate has been developed. The planarizing method comprises a two-step CMP process in which the first CMP step comprises chemical-mechanical polishing of silicon oxide using a first polishing slurry which is selective to silicon oxide. The time of the second CMP step is determined by selecting an overpolish thickness based on the percentage of substrate area occupied by the trench. High manufacturing yield and superior planarity for silicon oxide STI are achieved.
    Type: Grant
    Filed: July 12, 2000
    Date of Patent: November 11, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chin Kun Lan, Ting Chun Wang, Tong-Hua Kuan, Ying-Lang Wang
  • Patent number: 6626741
    Abstract: A method for improving thickness uniformity on a semiconductor wafer during a chemical mechanical polishing process capable of eliminating a wafer edge collapsing defect is described. In the method, slurry solution is removed from a peripheral edge portion of less than 10 mm wide on the surface of the polishing pad such that a concentration of the slurry can be effectively reduced in the peripheral region. The reduced slurry solution leads to a reduction in the removal rate on the wafer surface. The removal of slurry from the peripheral region can further be achieved by a mechanical means. A suitable width of the peripheral region of the polishing pad to be sprayed by an edge sprayer is less than 10 mm, and preferably between about 3 mm and about 5 mm. A suitable solvent to be sprayed is deionized water.
    Type: Grant
    Filed: July 20, 2001
    Date of Patent: September 30, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Ting-Chun Wang, Kei-Wei Chen, Shih-Tzung Chang, Yu-Ku Lin, Ying-Lang Wang
  • Publication number: 20030143924
    Abstract: A method and system is disclosed for reducing slurry usage in a chemical mechanical polishing operation utilizing at least one polishing pad thereof. Slurry can be intermittently supplied to a chemical mechanical polishing device. The slurry is generally flushed so that a portion of said slurry is trapped in a plurality of pores of at least one polishing pad associated with said chemical mechanical polishing device, wherein only a minimum amount of said slurry necessary is utilized to perform said chemical mechanical polishing operation, thereby reducing slurry usage and maintaining a consistent level of slurry removal rate performance and a decrease in particle defects thereof. The present invention thus discloses a method and system for intermittently delivering slurry to a chemical mechanical polishing device in a manner that significantly conserves slurry usage.
    Type: Application
    Filed: January 15, 2002
    Publication date: July 31, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kei-Wei Chen, Ting-Chun Wang, Shih-Tzung Chang, Yu-Ku Lin, Ying-Lang Wang, Ming-Wen Chen, Kuo-Hsiu Wei
  • Publication number: 20030127107
    Abstract: An apparatus and a method for removing coating layers from the top of alignment marks on a wafer are described. The apparatus includes a cleaning chamber that is a cavity and a lid member suspended in the cavity, a wafer chuck that is rotatably mounted in the lid member for holding a wafer in an upside down position such that the alignment marks are facing downwardly, and at least two solvent dispensing arms mounted in an outer peripheral area of the lid member that are immediately adjacent to the chuck for dispensing a flow of solvent upwardly toward the active surface of the wafer when the wafer is held in a stationary position, each of the at least two solvent dispensing arms are positioned corresponding to a position of one of the alignment marks.
    Type: Application
    Filed: January 7, 2002
    Publication date: July 10, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Aaron Cheng, Ting-Chun Wang, Yu-Ku Lin, Chun-Chang Chen, Yi-Lang Wang
  • Publication number: 20030017784
    Abstract: A method for improving thickness uniformity on a semiconductor wafer during a chemical mechanical polishing process capable of eliminating a wafer edge collapsing defect is described. In the method, slurry solution is removed from a peripheral edge portion of less than 10 mm wide on the surface of the polishing pad such that a concentration of the slurry can be effectively reduced in the peripheral region. The reduced slurry solution leads to a reduction in the removal rate on the wafer surface. The removal of slurry from the peripheral region can further be achieved by a mechanical means. A suitable width of the peripheral region of the polishing pad to be sprayed by an edge sprayer is less than 10 mm, and preferably between about 3 mm and about 5 mm. A suitable solvent to be sprayed is deionized water.
    Type: Application
    Filed: July 20, 2001
    Publication date: January 23, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ting-Chun Wang, Kei-Wei Chen, Shih-Tzung Chang, Yu-Ku Lin, Ying-Lang Wang