Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: The present disclosure is directed to an in situ closed-loop radio frequency (RF) power management on RF processes such as a plasma etch process, a plasma chemical vapor deposition process, a plasma physical vapor deposition process, a plasma clean process, or the like. An RF power measurement device according to one or more embodiments of the present disclosure assists the in situ closed-loop RF power management on RF processes. In some embodiments, the RF power measurement device includes a coil-shaped current sensor that is wound around the path between an RF generator and a chamber. The coil-shaped current sensor senses the current flowing through this path so that the power of the RF generator may be calibrated without having to separate the RF generator for separate analysis and calibration. The RF power measurement device allows management of RF power in an in situ closed-loop manner.

Abstract: Provided are organic light emitting devices (OLED) comprising an anode; a cathode, and an organic layer between the anode and the cathode, the organic layer comprising a light-emitting dopant within a host material, the light-emitting dopant being an optically active Pt complex comprising a tetradentate ligand; wherein one enantiomer of the optically active Pt complex is present in an enantiomeric excess (ee) of at least 5%. Further provided are OLEDs comprising an anode, a cathode, and an organic layer between the anode and the cathode, the organic layer the organic layer comprising a light-emitting chiral dopant within a chiral host material, the light-emitting chiral dopant being an optically active complex; wherein one enantiomer of the optically active complex of the chiral dopant is present in an ee of at least 5%, and wherein one enantiomer of the chiral host material is present in an ee of at least 5%.

Abstract: A full-automatic detection apparatus and system for important zoonotic pathogen, and a control method therefor. The full-automatic detection apparatus for important zoonotic pathogen includes: a base capable of moving; an air collection device, configured to collect a to-be-detected sample in air along with the movement of the base; a nucleic acid detection and analysis device, configured to detect the to-be-detected sample collected by the air collection device to determine whether an infectious pathogen exists in the to-be-detected sample; an intelligent mobile device, configured to plan and control a moving path of the base; and a control device, configured to control the intelligent mobile device to plan and control the moving path of the base and to control a sampling period of the air collection device according to a control instruction of the terminal, and transmit a detection result from the nucleic acid detection and analysis device to the terminal.

Abstract: A Mg—Li—Al—Zn alloy is disclosed. The Mg—Li—Al—Zn alloy comprises, in weight percent: 5-15% Li, 1.5-9.0% Al, 0.5-1.5% Zn, 0.4-1.3% Y, 0.18-1.01% Nd, 0.09-0.65% Ce, and the balance Mg and incidental impurities. Experimental data have proved that, this novel Mg—Li—Al—Zn alloy has a flashover temperature in a range between 620° C. and 700° C., such that the flashover temperature of the specifically-designed Mg—Li—Al—Zn alloy is greater than that of commercial LAZ521, LAZ721, LAZ771, LAZ921, and LAZ1491 alloys. Therefore, the Mg—Li—Al—Zn alloy of the present invention can be processed to be a structural article through air melt and casting process.

Abstract: A memory structure includes a substrate; a first gate structure, a second gate structure and a third gate structure disposed on the substrate, separated from each other along the first direction and respectively extending along the second direction and the third direction; channel bodies separated from each other and passing through the first gate structure, the second gate structure and the third gate structure along the first direction; dielectric films disposed between the first gate structure, the second gate structure, the third gate structure and the channel bodies; and a first side plug electrically connected to the substrate and the channel bodies. The first gate structure, the second gate structure and the third gate structure surround each of the dielectric films and each of the channel bodies, and the dielectric films do not include a charge storage structure.

Abstract: A transistor based on topological insulators is provided. In an embodiment a topological insulator is used to form both the channel as well as the source/drain regions, wherein the channel has a first thickness such that the topological insulator material has properties of a semiconductor material and the source/drain regions have a second thickness such that the topological insulator has properties of a conductive material.

Abstract: The present invention provides novel allergens isolated from grass carp Ctenopharyngodon idella, recombinant or modified polypeptides comprising such allergens, nucleic acids encoding the polypeptides as well as related compositions. Also provided are methods and kits for diagnosing fish allergy.

Abstract: The present invention provides methods and compositions for improved diagnosis of shrimp allergies.

Abstract: A transistor based on topological insulators is provided. In an embodiment a topological insulator is used to form both the channel as well as the source/drain regions, wherein the channel has a first thickness such that the topological insulator material has properties of a semiconductor material and the source/drain regions have a second thickness such that the topological insulator has properties of a conductive material.

Abstract: A transistor based on topological insulators is provided. In an embodiment a topological insulator is used to form both the channel as well as the source/drain regions, wherein the channel has a first thickness such that the topological insulator material has properties of a semiconductor material and the source/drain regions have a second thickness such that the topological insulator has properties of a conductive material.

Abstract: A semiconductor device includes a channel, source/drain structures, and a gate stack. The source/drain structures are on opposite sides of the channel. The gate stack is over the channel, and the gate stack includes a gate dielectric layer, a doped ferroelectric layer, and a gate electrode. The gate dielectric layer is over the channel. The doped ferroelectric layer is over the gate dielectric layer. The gate electrode is over the doped ferroelectric layer. A dopant concentration of the doped ferroelectric layer varies in a direction from the gate electrode toward the channel.

Abstract: A semiconductor device includes a channel, source/drain structures, and a gate stack. The source/drain structures are on opposite sides of the channel. The gate stack is over the channel, and the gate stack includes a gate dielectric layer, a doped ferroelectric layer, and a gate electrode. The gate dielectric layer is over the channel. The doped ferroelectric layer is over the gate dielectric layer. The gate electrode is over the doped ferroelectric layer. A dopant concentration of the doped ferroelectric layer varies in a direction from the gate electrode toward the channel.

Abstract: A transistor based on topological insulators is provided. In an embodiment a topological insulator is used to form both the channel as well as the source/drain regions, wherein the channel has a first thickness such that the topological insulator material has properties of a semiconductor material and the source/drain regions have a second thickness such that the topological insulator has properties of a conductive material.

Abstract: The present invention provides novel allergens isolated from grass carp Ctenopharyngodon Idella, recombinant or modified polypeptides comprising such allergens, nucleic acids encoding the polypeptides as well as related compositions. Also provided are methods and kits for diagnosing fish allergy.

Abstract: A semiconductor device includes a source and a drain and a channel disposed between the source and the drain, a first gate dielectric layer disposed on the channel, a first gate electrode disposed on the first gate dielectric layer, a second gate dielectric layer disposed on the first gate electrode, and a second gate electrode disposed on the second gate dielectric layer. The second gate dielectric layer is made of a ferroelectric material. A first area of a bottom surface of the first gate electrode which is in contact with the first gate dielectric layer where the is greater than a second area of a bottom surface of the second gate dielectric layer which is in contact with the first gate electrode.

Abstract: Doped titanium niobate is provided, which has a chemical structure of Ti(1-x)M1xNb(2-y)M2yO(7-z)Qz or Ti(2-x?)M1x?Nb(10-y?)M2y?O(29-z?)Qz?, wherein M1 is Li, Mg, or a combination thereof; M2 is Fe, Mn, V, Ni, Cr, or a combination thereof; Q is F, Cl, Br, I, S, or a combination thereof; 0?x?0.15; 0?y?0.15; 0.01?z?2; 0?x??0.3; 0?y??0.9; and 0.01?z??8.

Abstract: A transistor based on topological insulators is provided. In an embodiment a topological insulator is used to form both the channel as well as the source/drain regions, wherein the channel has a first thickness such that the topological insulator material has properties of a semiconductor material and the source/drain regions have a second thickness such that the topological insulator has properties of a conductive material.

Abstract: Semiconductor devices and methods of forming the same are provided. A first gate electrode layer is formed over a substrate. A first gate dielectric layer is formed over the first gate electrode layer. A first channel layer is formed over the first gate dielectric layer. An isolation layer is formed over the first channel layer. A second channel layer is formed over the isolation layer. A second gate dielectric layer is formed over the second channel layer. The second gate dielectric layer, the second channel layer, the isolation layer and the first channel layer are patterned to form a first opening, the first opening extending through the first gate dielectric layer, the second channel layer and the isolation layer, and into the first channel layer. A first source/drain region is formed in the first opening.