Patents by Inventor Ting-Hau Wu
Ting-Hau Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9138994Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.Type: GrantFiled: January 7, 2010Date of Patent: September 22, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jung-Huei Peng, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Ting-Hau Wu
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Publication number: 20150191350Abstract: The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during over etching periods of DRIE processes.Type: ApplicationFiled: March 23, 2015Publication date: July 9, 2015Inventors: Ting-Hau Wu, Kuei-Sung Chang
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Patent number: 8987845Abstract: The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during overetching periods of DRIE processes.Type: GrantFiled: November 9, 2012Date of Patent: March 24, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ting-Hau Wu, Kuei-Sung Chang
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Publication number: 20150054161Abstract: A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material.Type: ApplicationFiled: November 3, 2014Publication date: February 26, 2015Inventors: Kuei-Sung Chang, Nien-Tsung Tsai, Ting-Hau Wu, Yi Heng Tsai
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Patent number: 8878355Abstract: A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material.Type: GrantFiled: October 25, 2012Date of Patent: November 4, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuei-Sung Chang, Nien-Tsung Tsai, Ting-Hau Wu, Yi Heng Tsai
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Publication number: 20140283369Abstract: A method of forming a structure for a gyroscope sensor includes forming a first dielectric over a substrate and a material layer over the first dielectric layer. A first portion of the material layer is removed to form a recess and a second portion of the material layer is removed to define a first channel between a gyro disk and a frame. A second channel is formed in the substrate corresponding to the first channel, and a portion of the first dielectric is removed to form a second dielectric between the gyro disk and the substrate.Type: ApplicationFiled: June 10, 2014Publication date: September 25, 2014Inventors: Ting-Hau WU, Chun-Ren CHENG, Jiou-Kang LEE, Jung-Huei PENG, Shang-Ying TSAI
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Patent number: 8776600Abstract: A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk. A second light source is configured to provide a second light beam substantially parallel with the first light beam. A second light receiver is configured to receive the second light beam for sensing a vibration in a second direction of the gyro disk. The second direction is different from the first direction.Type: GrantFiled: September 11, 2012Date of Patent: July 15, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Jung-Huei Peng, Shang-Ying Tsai
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Publication number: 20140193949Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a first substrate; bonding a second substrate to the first substrate, the second substrate including a microeelectromechanical system (MEMS) device; and bonding a third substrate to the first substrate.Type: ApplicationFiled: March 11, 2014Publication date: July 10, 2014Applicant: Taiwan Semiconductor Manufacturing Company Ltd.Inventor: Ting-Hau Wu
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Publication number: 20140131818Abstract: The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during overetching periods of DRIE processes.Type: ApplicationFiled: November 9, 2012Publication date: May 15, 2014Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.Inventors: Ting-Hau Wu, Kuei-Sung Chang
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Publication number: 20140117510Abstract: A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material.Type: ApplicationFiled: October 25, 2012Publication date: May 1, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kuei-Sung Chang, Nien-Tsung Tsai, Ting-Hau Wu, Yi Heng Tsai
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Patent number: 8563400Abstract: Methods and structures using laser bonding for stacking semiconductor substrates are described. In one embodiment, a method of forming a semiconductor device includes forming a trench in a first substrate, and a bond pad on a second substrate comprising active circuitry. A top surface of the bond pad includes a first material. The first substrate is aligned over the second substrate to align the trench over the bond pad. An electromagnetic beam is directed into the trench to form a bond between the first material on the bond pad and a second material at a bottom surface of the first substrate.Type: GrantFiled: February 4, 2013Date of Patent: October 22, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng
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Patent number: 8455999Abstract: A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the opening, wherein substantially no portion of the organic material is outside of the opening and on the back surface of the wafer; and baking the organic material to cause a contraction of the organic material.Type: GrantFiled: September 22, 2011Date of Patent: June 4, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng
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Patent number: 8367516Abstract: Methods and structures using laser bonding for stacking semiconductor substrates are described. In one embodiment, a method of forming a semiconductor device includes forming a trench in a first substrate, and a bond pad on a second substrate comprising active circuitry. A top surface of the bond pad includes a first material. The first substrate is aligned over the second substrate to align the trench over the bond pad. An electromagnetic beam is directed into the trench to form a bond between the first material on the bond pad and a second material at a bottom surface of the first substrate.Type: GrantFiled: November 13, 2009Date of Patent: February 5, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng
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Patent number: 8362578Abstract: An integrated circuit structure includes a triple-axis accelerometer, which further includes a proof-mass formed of a semiconductor material; a first spring formed of the semiconductor material and connected to the proof-mass, wherein the first spring is configured to allow the proof-mass to move in a first direction in a plane; and a second spring formed of the semiconductor material and connected to the proof-mass. The second spring is configured to allow the proof-mass to move in a second direction in the plane and perpendicular to the first direction. The triple-axis accelerometer further includes a conductive capacitor plate including a portion directly over, and spaced apart from, the proof-mass, wherein the conductive capacitor plate and the proof-mass form a capacitor; an anchor electrode contacting a semiconductor region; and a transition region connecting the anchor electrode and the conductive capacitor plate, wherein the transition region is slanted.Type: GrantFiled: March 31, 2010Date of Patent: January 29, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Shang-Ying Tsai, Jiou-Kang Lee, Jung-Huei Peng
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Publication number: 20130000409Abstract: A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk. A second light source is configured to provide a second light beam substantially parallel with the first light beam. A second light receiver is configured to receive the second light beam for sensing a vibration in a second direction of the gyro disk. The second direction is different from the first direction.Type: ApplicationFiled: September 11, 2012Publication date: January 3, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ting-Hau WU, Chun-Ren CHENG, Jiou-Kang LEE, Jung-Huei PENG, Shang-Ying TSAI
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Patent number: 8309441Abstract: One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of posts separated from each other by removing a first portion of the first amorphous layer and a first portion of the second amorphous layer. At least some of the plurality of posts each comprises a second portion of the first amorphous layer, a first portion of the first glue layer, and a second portion of the second amorphous layer.Type: GrantFiled: July 5, 2011Date of Patent: November 13, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jiou-Kang Lee, Chun-Ren Cheng, Shang-Ying Tsai, Ting-Hau Wu, Hsiang-Fu Chen
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Patent number: 8281658Abstract: A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam adjacent to a first edge of the gyro disk. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk.Type: GrantFiled: January 12, 2009Date of Patent: October 9, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Jung-Huei Peng, Shang-Ying Tsai
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Patent number: 8237235Abstract: A metal-ceramic multilayer structure is provided. The underlying layers of the metal/ceramic multilayer structure have sloped sidewalls such that cracking of the metal-ceramic multilayer structure may be reduced or eliminated. In an embodiment, a layer immediately underlying the metal-ceramic multilayer has sidewalls sloped less than 75 degrees. Subsequent layers underlying the layer immediately underlying the metal/ceramic layer have sidewalls sloped greater than 75 degrees. In this manner, less stress is applied to the overlying metal/ceramic layer, particularly in the corners, thereby reducing the cracking of the metal-ceramic multilayer. The metal/ceramic multilayer structure includes one or more alternating layers of a metal seed layer and a ceramic layer.Type: GrantFiled: January 22, 2010Date of Patent: August 7, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Shang-Ying Tsai, Jung-Huei Peng, Jiou-Kang Lee
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Patent number: 8237263Abstract: An integrated circuit, a method of operating the integrated circuit, and a method of fabricating the integrated circuit are disclosed. According to one of the broader forms of the invention, a method and apparatus involve an integrated circuit that includes a heat transfer structure having a chamber that has a fluid disposed therein and that extends between a heat generating portion and a heat absorbing portion. Heat is absorbed into the fluid from the heat generating portion, and the fluid changes from a first phase to a second phase different from the first phase when the heat is absorbed. Heat is released from the fluid to the heat absorbing portion, and the fluid changes from the second phase to the first phase when the heat is released.Type: GrantFiled: December 31, 2009Date of Patent: August 7, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Chun-Wen Cheng, Jiou-Kang Lee, Jung-Huei Peng, Shang-Ying Tsai, Te-Hsi Lee
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Patent number: 8218286Abstract: An integrated circuit structure includes a capacitor, which further includes a first capacitor plate formed of polysilicon, and a second capacitor plate substantially encircling the first capacitor plate. The first capacitor plate has a portion configured to vibrate in response to an acoustic wave. The second capacitor plate is fixed and has slanted edges facing the first capacitor plate.Type: GrantFiled: December 31, 2008Date of Patent: July 10, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng