Patents by Inventor Ting-Hau Wu
Ting-Hau Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8106470Abstract: An integrated circuit structure includes a substrate having a top surface; a first conductive layer over and contacting the top surface of the substrate; a dielectric layer over and contacting the first conductive layer, wherein the dielectric layer includes an opening exposing a portion of the first conductive layer; and a proof-mass in the opening and including a second conductive layer at a bottom of the proof-mass. The second conductive layer is spaced apart from the portion of the first conductive layer by an air space. Springs anchor the proof-mass to portions of the dielectric layer encircling the opening. The springs are configured to allow the proof-mass to make three-dimensional movements.Type: GrantFiled: March 31, 2010Date of Patent: January 31, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Wen Cheng, Chun-Ren Cheng, Shang-Ying Tsai, Jung-Huei Peng, Jiou-Kang Lee, Allen Timothy Chang
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Publication number: 20120007220Abstract: A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the opening, wherein substantially no portion of the organic material is outside of the opening and on the back surface of the wafer; and baking the organic material to cause a contraction of the organic material.Type: ApplicationFiled: September 22, 2011Publication date: January 12, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng
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Patent number: 8053377Abstract: System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sacrificial material comprises (i) a polymer and (ii) a foaming agent or special function group. The structure can be formed by forming a trench in a substrate and filling the trench with a sacrificial material. The sacrificial material includes (i) a polymer and (ii) a foaming agent or special function group. After further process steps are completed, the sacrificial material is removed from the trench.Type: GrantFiled: September 28, 2010Date of Patent: November 8, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Ying Tsai, Chun-Ren Cheng, Jiou-Kang Lee, Jung-Huei Peng, Ting-Hau Wu
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Patent number: 8053336Abstract: A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the opening, wherein substantially no portion of the organic material is outside of the opening and on the back surface of the wafer; and baking the organic material to cause a contraction of the organic material.Type: GrantFiled: November 2, 2009Date of Patent: November 8, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng
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Publication number: 20110263106Abstract: One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of posts separated from each other by removing a first portion of the first amorphous layer and a first portion of the second amorphous layer. At least some of the plurality of posts each comprises a second portion of the first amorphous layer, a first portion of the first glue layer, and a second portion of the second amorphous layer.Type: ApplicationFiled: July 5, 2011Publication date: October 27, 2011Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jiou-Kang Lee, Chun-Ren "Sean" Cheng, Shang-Ying Tsai, Ting-Hau Wu, Hsiang-Fu "Benior" Chen
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Patent number: 7998775Abstract: When a native oxide grows on a polysilicon member of, e.g., a MEMS device, delamination between the polysilicon member and subsequently formed layers may occur because the native oxide is undercut during removal of sacrificial oxide layers. Nitriding the native oxide increases the etch selectivity relative the sacrificial oxide layers. Undercutting and delamination is hence reduced or eliminated altogether.Type: GrantFiled: November 16, 2009Date of Patent: August 16, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Ying Tsai, Chun-Ren Cheng, Jung-Huei Peng, Jiou-Kang Lee, Ting-Hau Wu
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Patent number: 7999257Abstract: A circuit structure includes a substrate; a first amorphous silicon layer over the substrate; a first glue layer over and adjoining the first amorphous silicon layer; and a second amorphous silicon layer over and adjoining the first glue layer.Type: GrantFiled: June 12, 2008Date of Patent: August 16, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jiou-Kang Lee, Chun-Ren “Sean” Cheng, Shang-Ying Tsai, Ting-Hau Wu, Hsiang-Fu “Benior” Chen
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Publication number: 20110156245Abstract: An integrated circuit, a method of operating the integrated circuit, and a method of fabricating the integrated circuit are disclosed. According to one of the broader forms of the invention, a method and apparatus involve an integrated circuit that includes a heat transfer structure having a chamber that has a fluid disposed therein and that extends between a heat generating portion and a heat absorbing portion. Heat is absorbed into the fluid from the heat generating portion, and the fluid changes from a first phase to a second phase different from the first phase when the heat is absorbed. Heat is released from the fluid to the heat absorbing portion, and the fluid changes from the second phase to the first phase when the heat is released.Type: ApplicationFiled: December 31, 2009Publication date: June 30, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Chun-Wen Cheng, Jiou-Kang Lee, Jung-Huei Peng, Shang-Ying Tsai, Te-Hsi Lee
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Patent number: 7923379Abstract: A method of forming an integrated circuit structure includes forming an opening in a substrate, with the opening extending from a top surface of the substrate into the substrate. The opening is filled with a filling material until a top surface of the filling material is substantially level with the top surface of the substrate. A device is formed over the top surface of the substrate, wherein the device includes a storage opening adjoining the filling material. A backside of the substrate is grinded until the filling material is exposed. The filling material is removed from the channel until the storage opening of the device is exposed.Type: GrantFiled: December 31, 2008Date of Patent: April 12, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jiou-Kang Lee, Ting-Hau Wu, Shang-Ying Tsai, Jung-Huei Peng, Chun-Ren Cheng
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Publication number: 20110081740Abstract: System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sacrificial material comprises (i) a polymer and (ii) a foaming agent or special function group. The structure can be formed by forming a trench in a substrate and filling the trench with a sacrificial material. The sacrificial material includes (i) a polymer and (ii) a foaming agent or special function group. After further process steps are completed, the sacrificial material is removed from the trench.Type: ApplicationFiled: September 28, 2010Publication date: April 7, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: SHANG-YING TSAI, CHUN-REN CHENG, JIOU-KANG LEE, JUNG-HUEI PENG, TING-HAU WU
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Publication number: 20110012247Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a first substrate; bonding a second substrate to the first substrate, the second substrate including a microelectromechanical system (MEMS) device; and bonding a third substrate to the first substrate.Type: ApplicationFiled: August 6, 2009Publication date: January 20, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventor: Ting-Hau Wu
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Publication number: 20100308424Abstract: An integrated circuit structure includes a substrate having a top surface; a first conductive layer over and contacting the top surface of the substrate; a dielectric layer over and contacting the first conductive layer, wherein the dielectric layer includes an opening exposing a portion of the first conductive layer; and a proof-mass in the opening and including a second conductive layer at a bottom of the proof-mass. The second conductive layer is spaced apart from the portion of the first conductive layer by an air space. Springs anchor the proof-mass to portions of the dielectric layer encircling the opening. The springs are configured to allow the proof-mass to make three-dimensional movements.Type: ApplicationFiled: March 31, 2010Publication date: December 9, 2010Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Wen Cheng, Chun-Ren Cheng, Shang-Ying Tsai, Jung-Huei Peng, Jiou-Kang Lee, Allen Timothy Chang
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Publication number: 20100301433Abstract: An integrated circuit structure includes a triple-axis accelerometer, which further includes a proof-mass formed of a semiconductor material; a first spring formed of the semiconductor material and connected to the proof-mass, wherein the first spring is configured to allow the proof-mass to move in a first direction in a plane; and a second spring formed of the semiconductor material and connected to the proof-mass. The second spring is configured to allow the proof-mass to move in a second direction in the plane and perpendicular to the first direction. The triple-axis accelerometer further includes a conductive capacitor plate including a portion directly over, and spaced apart from, the proof-mass, wherein the conductive capacitor plate and the proof-mass form a capacitor; an anchor electrode contacting a semiconductor region; and a transition region connecting the anchor electrode and the conductive capacitor plate, wherein the transition region is slanted.Type: ApplicationFiled: March 31, 2010Publication date: December 2, 2010Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Shang-Ying Tsai, Jiou-Kang Lee, Jung-Huei Peng
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Publication number: 20100258883Abstract: A metal-ceramic multilayer structure is provided. The underlying layers of the metal/ceramic multilayer structure have sloped sidewalls such that cracking of the metal-ceramic multilayer structure may be reduced or eliminated. In an embodiment, a layer immediately underlying the metal-ceramic multilayer has sidewalls sloped less than 75 degrees. Subsequent layers underlying the layer immediately underlying the metal/ceramic layer have sidewalls sloped greater than 75 degrees. In this manner, less stress is applied to the overlying metal/ceramic layer, particularly in the corners, thereby reducing the cracking of the metal-ceramic multilayer. The metal/ceramic multilayer structure includes one or more alternating layers of a metal seed layer and a ceramic layer.Type: ApplicationFiled: January 22, 2010Publication date: October 14, 2010Applicant: Taiwan Semiconductor Manfacturing Company, Ltd.Inventors: Ting-Hau Wu, Chun-Ren Cheng, Shang-Ying Tsai, Jung-Huei Peng, Jiou-Kang Lee
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Publication number: 20100225708Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.Type: ApplicationFiled: January 7, 2010Publication date: September 9, 2010Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jung-Huei Peng, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Ting-Hau Wu
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Publication number: 20100203664Abstract: When a native oxide grows on a polysilicon member of, e.g., a MEMS device, delamination between the polysilicon member and subsequently formed layers may occur because the native oxide is undercut during removal of sacrificial oxide layers. Nitriding the native oxide increases the etch selectivity relative the sacrificial oxide layers. Undercutting and delamination is hence reduced or eliminated altogether.Type: ApplicationFiled: November 16, 2009Publication date: August 12, 2010Inventors: Shang-Ying Tsai, Chun-Ren Cheng, Jung-Huei Peng, Jiou-Kang Lee, Ting-Hau Wu
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Publication number: 20100178732Abstract: Methods and structures using laser bonding for stacking semiconductor substrates are described. In one embodiment, a method of forming a semiconductor device includes forming a trench in a first substrate, and a bond pad on a second substrate comprising active circuitry. A top surface of the bond pad includes a first material. The first substrate is aligned over the second substrate to align the trench over the bond pad. An electromagnetic beam is directed into the trench to form a bond between the first material on the bond pad and a second material at a bottom surface of the first substrate.Type: ApplicationFiled: November 13, 2009Publication date: July 15, 2010Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng
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Publication number: 20100175479Abstract: A gyroscope sensor includes a gyro disk. A first light source is configured to provide a first light beam adjacent to a first edge of the gyro disk. A first light receiver is configured to receive the first light beam for sensing a vibration at a first direction of the gyro disk.Type: ApplicationFiled: January 12, 2009Publication date: July 15, 2010Applicant: Taiwan Semiconductor Manufacturing CompanyInventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Jung-Huei Peng, Shang-Ying Tsai
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Publication number: 20100120202Abstract: A method of forming an integrated circuit structure including providing a wafer comprising a front surface and a back surface, wherein the wafer comprises a chip; forming an opening extending from the back surface into the chip; filling an organic material in the opening, wherein substantially no portion of the organic material is outside of the opening and on the back surface of the wafer; and baking the organic material to cause a contraction of the organic material.Type: ApplicationFiled: November 2, 2009Publication date: May 13, 2010Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng
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Publication number: 20100117168Abstract: An integrated circuit structure includes a capacitor, which further includes a first capacitor plate formed of polysilicon, and a second capacitor plate substantially encircling the first capacitor plate. The first capacitor plate has a portion configured to vibrate in response to an acoustic wave. The second capacitor plate is fixed and has slanted edges facing the first capacitor plate.Type: ApplicationFiled: December 31, 2008Publication date: May 13, 2010Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Jung-Huei Peng