Abstract: The techniques described herein relate to ultrasonic welding and related techniques for luggage. In some embodiments, a method of manufacturing a luggage component is provided that includes orienting a first component adjacent to a second component, wherein a first surface of the first component adjacent a second surface of the second component comprises a flat portion with one or more protrusions extending from the flat portion, and applying, via a horn sized to receive the first component, an ultrasonic vibration to melt the one or more protrusions to ultrasonically weld the first component to the second component.

Abstract: An apparatus for inspecting wafer carriers is disclosed. In one example, the apparatus includes: a housing; a load port; a robot arm inside the housing; and a processor. The load port is configured to load a wafer carrier into the housing. The robot arm is configured to move a first camera connected to the robot arm. The first camera is configured to capture a plurality of images of the wafer carrier. The processor is configured to process the plurality of images to inspect the wafer carrier.

Abstract: In accordance with an aspect of the present disclosure, a radio frequency front end system is provided. The radio frequency front end system comprises an RF path configured to propagate an RF signal between ports of the RF path, an RF coupler configured to extract a portion of a power of the RF signal propagating between the ports of the RF path, and a first RF coupler circuit. The first RF coupler circuit is coupled to the RF coupler and includes a first isolator configured to isolate at least one of a switching transient impedance and a charge spur from the RF path.

Abstract: A digital envelope tracking (DET) supply modulator is provided. The DET supply modulator includes a switching converter, a dynamic switched-capacitor circuit and a digital control circuit. The switching converter converts an input supply voltage into an output envelope tracking (ET) voltage according to a first control signal. The dynamic switched-capacitor circuit outputs multiple supplement voltages for supplementing alternating current (AC) components of the output ET voltage by multiple stages. More particularly, the dynamic switched-capacitor circuit comprises multiple switched-capacitor cells and a selection circuit, wherein the selection circuit is coupled to the multiple switched-capacitor cells. In detail, the multiple switched-capacitor cells generate the multiple supplement voltages, respectively, and the selection circuit controls switching of each of the multiple switched-capacitor cells according to a second control signal.

Abstract: A power supply system includes a primary side circuit, a secondary side circuit, an auxiliary winding, a blocking module, a control module, and a controller. The auxiliary winding is magnetically coupled to the secondary side winding and includes a first sub winding and a second sub winding in series. The auxiliary winding has a first tap at the dotted end of the first sub winding, a second tap at the dotted end of the second sub winding, and a ground tap coupling the second sub winding to the ground. The blocking module receives a first auxiliary voltage and a second auxiliary voltage and outputs a selected voltage. The control module controls the blocking module according to the second auxiliary voltage to output the first auxiliary voltage or the second auxiliary voltage as the selected voltage. The controller is electrically coupled to the blocking module and the control module.

Abstract: Techniques pertaining to anti-motion and anti-interference frame exchange sequences in wireless communications are described. A station (STA), such as a Wi-Fi equipment, determines to enable a frame exchange sequence (FES). The STA then communicates with one or more other STAs by utilizing the FES in which preamble puncturing sounding and data transmission are performed in a same transmission opportunity (TXOP).

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Abstract: A bench seat training structure with adjustable resistance includes: a base frame extending in a horizontal direction and including first and second support portions on opposite ends thereof in the horizontal direction as well as a bench portion, the first and second support portions and the bench portion jointly defining a bottom space; a transmission unit disposed on the base frame and including a pull cord having a free end and a fixed end; and an adjustable resistance unit disposed in the bottom space, with the fixed end being directly or indirectly connected thereto so that when an operational force is applied to the free end, the pull cord is dragged to move and a resistance is applied to the fixed end. Therefore, an operator can apply a force onto either side of the base frame to select various training modes and to adjust the resistance at will.

Abstract: Disclosed herein are hemostasis seals with low pass-through friction force. The disclosed seals are configured for use with transcatheter delivery systems or vascular access sheath systems. The seals are a unitary design that provide low pass-through friction when passing a catheter through the seal. The specifics of the design that provides the desirable low pass-through friction include the physical configuration of the seals and the material used for the seals. The disclosed seals include an outer portion, an inner annular portion, and a webbing portion connecting the outer portion to the inner annular portion, forming a suspended O-ring. The suspended O-ring provides an opening through which a delivery device can be passed and applies a relatively low friction force on the delivery device as it is passed through the opening.

Abstract: A method for forming a polyurethane foam with reduced emissions is provided. The method includes a step of reacting a mixture comprising a polyol composition, an isocyanate composition, and a butylated triphenyl phosphate ester, The reaction forms a polyurethane foam. Characteristically, the butylated triphenyl phosphate ester is present in a sufficient amount to inhibit emission of propionaldehyde, formaldehyde, and acetaldehyde.

Abstract: A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids. The substrate processing method comprises supplying a first process fluid containing a precursor and a first supercritical fluid to a reactor to raise a pressure of the reactor to a first pressure equal to or greater than a critical pressure, subsequently, first venting the reactor to lower the pressure in the reactor to a second pressure, subsequently, supplying a second process fluid containing a reducing fluid to the reactor to raise the pressure in the reactor to a third pressure, subsequently, second venting the reactor to lower the pressure in the reactor to a fourth pressure.

Abstract: A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids.

Abstract: Disclosed are HfO2—ZrO2 superlattice heterostructures such as a gate stack (24), stabilized with mixed ferroelectric-antiferroelectric order. directly integrated onto silicon (Si) transistors and scaled down to ˜20 ?. the same gate oxide thickness required for high-performance transistors. The overall equivalent oxide thickness in metal-oxide-semiconductor capacitors is ˜6.5 ? effective SiO2 thickness, which is even smaller than the interfacial SiO2 thickness (8.0-8.5 ?) itself. and the resulting large capacitance cannot be achieved in conventional HfO2-based high-? dielectric gate stacks without scavenging the interfacial SiO2. which has adverse effects on the electron transport and gate leakage current. Accordingly. the disclosed gate stacks (24), which do not require such scavenging.

Abstract: A multihull module is provided. The multihull module includes multiple power floats, an actuation interface controller, and a vehicle controller. The power floats are disposed on a vehicle. The actuation interface controller is coupled to the power floats, and is configured to control the power floats. The vehicle controller is coupled to the actuation interface controller, and is configured to provide a control signal to the actuation interface controller. The actuation interface controller controls the power floats according to the control signal.

Abstract: A device calculates a memory oversubscription threshold for a virtual machine (VM). Based on the memory oversubscription threshold, the device determines a first memory size to be physically allocated to the VM, and a second memory size to be oversubscribed to the VM. The device configures a first virtual non-uniform memory access (NUMA) node comprising a virtual processor and a first virtual memory having the first memory size. The device allocates a first physical memory to back the first virtual memory. The device configures a second virtual NUMA node comprising a second virtual memory having the second memory size. The second virtual NUMA node is a computeless NUMA node. The device configures the VM to use the first virtual NUMA node and the second virtual NUMA node. Based on the second virtual NUMA node being computeless, the VM funnels a memory access to the first virtual memory.

Abstract: A ship docking system and a ship docking method are provided. The ship docking system includes a computing device, an unmanned aerial vehicle communicating wirelessly with the computing device and pre-docked on a charging platform, and a display device communicating wirelessly with the computing device. When the computing device determines that the ship is performing a port entry operation, the computing device controls the unmanned aerial vehicle to move to a preset height above the ship and to obtain a panoramic image of the ship. The unmanned aerial vehicle transmits the panoramic image to the computing device, so that the computing device analyzes the panoramic image to perform a collision prediction of the ship, and transmits a collision prediction result to the display device.

Abstract: Display devices are provided. The display device includes a substrate, first to third light emitting units, and first and second spacers disposed on the substrate. The first to third light emitting units are configured to emit a first light with a first color respectively. The first light emitting unit is adjacent to the second and third light emitting units. The first spacer is disposed between the first light emitting unit and the second light emitting unit. The second spacer is disposed between the first light emitting unit and the third light emitting unit. The extending line of the first long axis of the first spacer passes through the first light emitting unit and the second light emitting unit. The extending line of the second long axis of the second spacer passes through the first light emitting unit and the third light emitting unit.

Abstract: Provided is a substrate treatment apparatus using a supercritical fluid, the apparatus capable of depositing a conformal film in a trench with a high aspect ratio and capable of performing void-free complete gap-filling. The substrate treatment apparatus includes: an upper vessel including a first body and a supply port formed in the first body and supplying a process fluid; a baffle plate installed in the upper vessel and supplying the process fluid supplied through the supply port to a treatment space by diffusing the process fluid; a lower vessel including a second body and an exhaust port formed in the second body and exhausting the process fluid from the treatment space; and a support plate installed in the lower vessel to face the baffle plate and supporting a substrate, wherein while a supercritical process is performed in the treatment space, the support plate is heated so that the temperature of the support plate is higher than that of the first body.

Abstract: A floating image device includes a collimating optical assembly, a light source assembly, an imaging unit, and a microlens array. The light source assembly is suitable for emitting a beam to the collimating optical assembly, the beam is converted into a collimated beam by the collimating optical assembly, and a spread angle of the collimated beam at a half-intensity position is smaller than +/?15°. The imaging unit is arranged on one side of the collimating optical assembly that is away from the light source assembly, and the collimated beam is suitable for being converted into an image beam by the imaging unit in a collimated manner; and the microlens array is arranged on one side of the imaging unit. The microlens array focuses the image beam and projects a focused image beam into a floating image. The floating image device is capable of making the floating image clear.

Abstract: An endoscope module includes a non-metallic main body, a plurality of lighting devices and an image-obtaining device. The non-metallic main body includes a body and a plurality of extending portions. The body has a first surface. The extending portions are respectively connected with the first surface. The extending portions define a space therebetween. The lighting devices are respectively disposed on a side of a corresponding one of the extending portions away from the first surface. Each of the lighting devices has a light-emitting surface located on a side of a corresponding one of the lighting devices away from the first surface. The image-obtaining device is at least partially located in the space and connected with the first surface. The image-obtaining device has a light-transmitting surface located on a side of the image-obtaining device away from the first surface.