Abstract: A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a fin structure over a substrate in a first direction, forming a first gate stack, a second gate stack and a third gate stack across the fin structure, removing the first gate stack to form a trench, depositing a cutting structure in the trench, and forming a first contact plug between the cutting structure and the second gate stack and a second contact plug between the second gate stack and the third gate stack. The fin structure is cut into two segments by the trench. A first dimension of the first contact plug in the first direction is greater than a second dimension of the second contact plug in the first direction.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a first trench in the base and between the first fin and the second fin. The method includes forming an isolation layer over the base and in the first trench. The first fin and the second fin are partially in the isolation layer. The method includes forming a first gate stack over the first fin and the isolation layer. The method includes forming a second gate stack over the second fin and the isolation layer. The method includes removing a bottom portion of the base. The isolation layer passes through the base after the bottom portion of the base is removed.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate. The second semiconductor fin is wider than the first semiconductor fin. The method also includes forming a gate stack over the semiconductor substrate, and the gate stack extends across the first semiconductor fin and the second semiconductor fin. The method further includes forming a first source/drain structure on the first semiconductor fin, and the first source/drain structure is p-type doped. In addition, the method includes forming a second source/drain structure on the second semiconductor fin, and the second source/drain structure is n-type doped.

Abstract: Provided are embodiments for providing analytics indicative of object detection or fill-level detection at or near real-time based on video data captured during an unloading or loading process. A computerized system may detect and classify, using an object-detection machine learning (ML) model, an object based on the video data. A computerized system may further determine, using a fill-level ML model, a fill-level of the storage compartment based on a comparison of edges of the storage compartment to a total dimension corresponding to the edge. In this manner, the various implementations described herein provide a technique for computing systems employing image processing and machine learning techniques to a video data stream to generate analytics associated with the unloading or loading process at or near real-time.

Abstract: A coaxial laser light source apparatus includes at least one laser light source module, a beam homogenizer, and optical path adjusting elements. The laser light source module includes multiple laser light sources arranged along a first direction, and each of the laser light sources is configured to emit a laser light along a second direction. The first direction is substantially perpendicular to the second direction, and the laser lights have different properties. The laser lights travel along the second direction toward the beam homogenizer coaxially. The optical path adjusting elements are located between the laser light sources and the beam homogenizer, and the optical path adjusting elements are configured to adjust traveling directions of the laser lights.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: A coaxial laser light source apparatus includes at least one laser light source module, a beam homogenizer, and optical path adjusting elements. The laser light source module includes multiple laser light sources arranged along a first direction, and each of the laser light sources is configured to emit a laser light along a second direction. The first direction is substantially perpendicular to the second direction, and the laser lights have different properties. The laser lights travel along the second direction toward the beam homogenizer coaxially. The optical path adjusting elements are located between the laser light sources and the beam homogenizer, and the optical path adjusting elements are configured to adjust traveling directions of the laser lights.

Abstract: An operation method of a remote laser projection device includes emitting multiple first lights to an optical transmission module through multiple light source modules, the optical transmission module includes multiple optical fibers, and each of the light source modules includes to a plurality of optical fibers; and transmitting the first lights to the projection head through the optical fiber of the corresponding optical transmission module.

Abstract: An operation method of a remote laser projection device includes emitting a first light to an optical transmission module through at least one light source module; transmitting the first light to at least one projection head through the optical transmission module, wherein total light energy of the first light is allocated to the projection head through the optical transmission module, such that energy of a light transmitted to the projection device is E/N, and wherein E is total light energy of the at least one light module, and N is a number of the at least one projection device.

Abstract: A projecting method includes: outputting, by a projection display apparatus, a projected image to a projection screen through a shifting device, wherein the projected image includes multiple frames; outputting, by a processing circuit, a control signal to drive the shifting device to rotate multiple first angles along a first axis or to rotate multiple second angles along a second axis, wherein combination of the first and the second angles corresponds to multiple projected positions; and when the projection display apparatus outputs multiple frames sequentially, rotating the shifting device sequentially according to the control signal to make multiple frames projected to the corresponding one of projected positions, wherein a number of the first angles or the second angles is at least four.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: An operation method of a remote laser projection device includes emitting a first light to an optical transmission module through at least one light source module; transmitting the first light to at least one projection head through the optical transmission module, wherein total light energy of the first light is allocated to the projection head through the optical transmission module, such that energy of a light transmitted to the projection device is E/N, and wherein E is total light energy of the at least one light module, and N is a number of the at least one projection device.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: A semiconductor device includes a substrate, a gate disposed over the substrate, a source/drain disposed in the substrate at two sides of the gate, and an insulating layer disposed over sidewalls of the gate and at least a portion of a surface of the source/drain. In some embodiments, the insulating layer includes a first side facing the gate or the source, and includes a second side opposite to the first side. The insulating layer includes dopants, and a concentration of the dopants is reduced from the second side to the first side of the insulating layer.

Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.

Abstract: A projection device includes a laser source and a birefringent depolarizer. The birefringent depolarizer is a single wedge shape and is arranged in front of a projection lens. The laser source is configured to emit a laser beam to penetrate the birefringent depolarizer to be a projection beam having multiple polarization patterns different from polarization patterns of the laser beam. The projection beam is projected onto a projection screen through the projection lens. The polarization patterns are multiple different polarization directions.

Abstract: A projecting method includes: outputting, by a projection display apparatus, a projected image to a projection screen through a shifting device, wherein the projected image includes multiple frames; outputting, by a processing circuit, a control signal to drive the shifting device to rotate multiple first angles along a first axis or to rotate multiple second angles along a second axis, wherein combination of the first and the second angles corresponds to multiple projected positions; and when the projection display apparatus outputs multiple frames sequentially, rotating the shifting device sequentially according to the control signal to make multiple frames projected to the corresponding one of projected positions, wherein a number of the first angles or the second angles is at least four.

Abstract: A semiconductor device includes a substrate, a gate disposed over the substrate, a source/drain disposed in the substrate at two sides of the gate, and an insulating layer disposed over sidewalls of the gate and at least a portion of a surface of the source/drain. In some embodiments, the insulating layer includes a first side facing the gate or the source, and includes a second side opposite to the first side. The insulating layer includes dopants, and a concentration of the dopants is reduced from the second side to the first side of the insulating layer.

Abstract: A projection device includes a laser source and a birefringent depolarizer. The birefringent depolarizer is a single wedge shape and is arranged in front of a projection lens. The laser source is configured to emit a laser beam to penetrate the birefringent depolarizer to be a projection beam having multiple polarization patterns different from polarization patterns of the laser beam. The projection beam is projected onto a projection screen through the projection lens. The polarization patterns are multiple different polarization directions.