Patents by Inventor Tobin J. Marks

Tobin J. Marks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR MATERIALS AND METHODS OF PREPARATION AND USE THEREOF
    Publication number: 20110136333
    Abstract: Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
    Type: Application
    Filed: May 29, 2009
    Publication date: June 9, 2011
    Applicants: BASF SE, POLYERA CORPORATION
    Inventors: Antonio Facchetti, Zhihua Chen, Florian Doetz, Marcel Kastler, Tobin J. Marks, He Yan, Yan Zheng
  • SEMICONDUCTOR MATERIALS PREPARED FROM RYLENE-(PI-ACCEPTOR)COPOLYMERS
    Publication number: 20110120558
    Abstract: Disclosed are new semiconductor materials prepared from rylene-(?-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
    Type: Application
    Filed: February 5, 2009
    Publication date: May 26, 2011
    Inventors: Antonio Facchetti, Zhihua Chen, He Yan, Shaofeng Lu, Tobin J. Marks, Yan Zheng, Marcel Kastler, Subramanian Vaidyanathan, Florian Doetz, Silke Annika Koehler
  • Organic semiconductor materials and methods of preparing and use thereof
    Patent number: 7947837
    Abstract: Solution-processable organic n-type semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the organic n-type semiconductor materials also are provided.
    Type: Grant
    Filed: October 24, 2007
    Date of Patent: May 24, 2011
    Assignee: Polyera Corporation
    Inventors: Tobin J. Marks, Antonio Facchetti, He Yan
  • n-Type thiophene semiconductors
    Publication number: 20110118483
    Abstract: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, ?,?-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
    Type: Application
    Filed: November 29, 2010
    Publication date: May 19, 2011
    Inventors: Tobin J. Marks, Antonio Facchetti
  • Conjugated monomers and polymers and preparation and use thereof
    Patent number: 7928249
    Abstract: Disclosed are new conjugated compounds (e.g., monomers and polymers) that include ladder-type moieties which can be used for preparing semiconducting materials. Such conjugated compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. Compounds of the present teachings also can exhibit ambipolar semiconducting activity. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability in ambient conditions.
    Type: Grant
    Filed: July 31, 2008
    Date of Patent: April 19, 2011
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti, Hakan Usta
  • Transparent nanowire transistors and methods for fabricating same
    Patent number: 7910932
    Abstract: Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.
    Type: Grant
    Filed: June 2, 2008
    Date of Patent: March 22, 2011
    Assignees: Northwestern University, Purdue Research Foundation, University of Southern California
    Inventors: Tobin J. Marks, David B. Janes, Sanghyun Ju, Peide Ye, Chongwu Zhou, Antonio Facchetti
  • Transparent Conducting Components and Related Electro-Optic Modulator Devices
    Publication number: 20110058766
    Abstract: New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.
    Type: Application
    Filed: November 15, 2010
    Publication date: March 10, 2011
    Inventors: Tobin J. Marks, Seng-Tiong Ho, Jing Ma, Guoyang Xu
  • Diimide-based semiconductor materials and methods of preparing and using the same
    Patent number: 7902363
    Abstract: Diimide-based semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the diimide-based semiconductor materials also are provided.
    Type: Grant
    Filed: November 19, 2007
    Date of Patent: March 8, 2011
    Assignee: Polyera Corporation
    Inventors: Antonio Facchetti, Tobin J. Marks, He Yan
  • Acene-based organic semiconductor materials and methods of preparing and using the same
    Patent number: 7892454
    Abstract: Acene-based compounds that can be used to prepare n-type semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including n-type semiconductor materials prepared from these compounds also are provided.
    Type: Grant
    Filed: November 19, 2007
    Date of Patent: February 22, 2011
    Assignees: Polyera Corporation, Northwestern University
    Inventors: Antonio Facchetti, Tobin J. Marks, Zhiming M. Wang
  • Methods for preparing arene-BIS (dicarboximide)-based semiconducting materials and related intermediates for preparing same
    Patent number: 7893265
    Abstract: The present teachings provide compounds of formulae I and II: where Q, Ra, R1, W, and n are as defined herein. The present teachings also provide methods of preparing compounds of formulae I and II, including methods of preparing compounds of formula II from compounds of formula I. The compounds disclosed herein can be used to prepare semiconductor materials and related composites and electronic devices.
    Type: Grant
    Filed: January 7, 2008
    Date of Patent: February 22, 2011
    Assignee: Polyera Corporation
    Inventors: Antonio Facchetti, Tobin J. Marks, He Yan
  • Organoactinide-, Organolanthanide-, and OrganoGroup-4-Mediated Hydrothiolation of Terminal Alkynes with Aliphatic, Aromatic and Benzylic Thiols
    Publication number: 20110040098
    Abstract: An efficient and highly Markovnikov selective organoactinide-, organolanthanide-, and organozirconium-catalyzed addition of aryl, benzyl, and aliphatic thiols to terminal alkynes is described. The corresponding vinyl sulfides are produced with little or no side-products.
    Type: Application
    Filed: August 13, 2010
    Publication date: February 17, 2011
    Inventors: Tobin J. Marks, Charles J. Weiss, Stephen D. Wobser
  • Crosslinked Polymeric Dielectric Materials And Electronic Devices Incorporating Same
    Publication number: 20110024729
    Abstract: Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.
    Type: Application
    Filed: April 20, 2010
    Publication date: February 3, 2011
    Inventors: Tobin J. Marks, Antonio Facchetti, Zhiming Wang, Hyuk-Jin Choi, Nae-Jeong Suh
  • n-Type thiophene semiconductors
    Patent number: 7842198
    Abstract: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, ?,?-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
    Type: Grant
    Filed: May 1, 2008
    Date of Patent: November 30, 2010
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti
  • Transparent conducting components and related electro-optic modulator devices
    Patent number: 7835597
    Abstract: New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.
    Type: Grant
    Filed: August 1, 2007
    Date of Patent: November 16, 2010
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Seng-Tiong Ho, Jing Ma, Guoyang Xu
  • Twisted ?-electron system chromophore compounds with very large molecular hyperpolarizabilities and related compositions and devices
    Patent number: 7824582
    Abstract: Unconventional twisted ?-electron system electro-optic (EO) chromophores/compounds, compositions and related device structures. Crystallographic analysis of several non-limiting chromophores reveals, for instance, large ring-ring dihedral twist angles and a highly charge-separated zwitterionic structure in the ground state, in both solution phase and solid-state.
    Type: Grant
    Filed: March 24, 2006
    Date of Patent: November 2, 2010
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Hu Kang
  • TWISTED PI-ELECTRON SYSTEM CHROMOPHORE COMPOUNDS WITH VERY LARGE MOLECULAR HYPERPOLARIZABILITIES AND RELATED COMPOSITIONS AND DEVICES
    Publication number: 20100273919
    Abstract: Unconventional twisted ?-electron system electro-optic (EO) chromophores/compounds, compositions and related device structures. Crystallographic analysis of several non-limiting chromophores reveals, for instance, large ring-ring dihedral twist angles and a highly charge-separated zwitterionic structure in the ground state, in both solution phase and solid-state.
    Type: Application
    Filed: June 14, 2010
    Publication date: October 28, 2010
    Inventors: Tobin J. Marks, Hu Kang
  • Silole-based polymers and semiconductor materials prepared from the same
    Patent number: 7816480
    Abstract: The present teachings provide silole-based polymers that can be used as p-type semiconductors. More specifically, the present teachings provide polymers that include a repeating unit of Formula I: wherein R1, R2, R3, R4, R5R6, Z, x, and x? are as defined herein. The present teachings also provide methods of preparing these polymers, and relate to various compositions, composites, and devices that incorporate these polymers.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: October 19, 2010
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti, Gang Lu, Hakan Usta, Joseph Letizia
  • ORGANIC PHOTOVOLTAIC DEVICE WITH INTERFACIAL LAYER AND METHOD OF FABRICATING SAME
    Publication number: 20100252113
    Abstract: An organic photovoltaic device and method of forming same. In one embodiment, the organic photovoltaic device has an anode, a cathode, an active layer disposed between the anode and the cathode; and an interfacial layer disposed between the anode and the active layer, the interfacial layer comprising 5,5?-bis [(p-trichlorosilylpropylphenyl) phenylamino]-2,2?-bithiophene (PABTSi2).
    Type: Application
    Filed: April 30, 2010
    Publication date: October 7, 2010
    Applicant: Northwestern University
    Inventors: Tobin J. Marks, Alexander W. Hains
  • Electron-blocking layer / hole-transport layer for organic photovoltaics and applications of same
    Patent number: 7799990
    Abstract: The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode; an active organic layer comprising an electron-donating organic material and an electron-accepting organic material; a semiconducting layer formed between the anode and the active organic layer; and an electron-blocking layer (EBL) formed between the semiconducting layer and the active organic layer, where the EBL is transparent and adapted for blocking electron leakage from the active organic layer to the anode while transporting holes from the active organic layer to the anode.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: September 21, 2010
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Alexander W. Hains, Michael D. Irwin, He Yan
  • NANOSCALE, SPATIALLY-CONTROLLED GA DOPING OF UNDOPED TRANSPARENT CONDUCTING OXIDE FILMS
    Publication number: 20100230814
    Abstract: An article of manufacture comprising a nanowire and methods of making the same. In one embodiment, the nanowire includes a Ga-doped trace formed on a surface of an indium oxide layer having a thickness in nano-scale, and wherein the Ga-doped trace is formed with a dimension that has a depth is less than a quarter of the thickness of the indium oxide layer. In one embodiment, the indium oxide layer, which is optically transparent and electrically insulating, comprises an In2O3 film, and the thickness of the indium oxide layer is about 40 nm, and the depth of the nanowire is less than 10 nm.
    Type: Application
    Filed: June 22, 2009
    Publication date: September 16, 2010
    Applicant: NORTHWESTERN UNIVERSITY
    Inventors: Tobin J. Marks, Mark C. Hersam, Norma E. S. Cortes