Patents by Inventor Tobin J. Marks

Tobin J. Marks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Naphthalene-based semiconductor materials and methods of preparing and use thereof
    Patent number: 7569693
    Abstract: Provided are mono- and diimide naphthalene compounds for use in the fabrication of various device structures. In some embodiments, the naphthalene core of these compounds are mono-, di-, or tetra-substituted with cyano group(s) or other electron-withdrawing substituents or moieties. Such mono- and diimide naphthalene compounds also can be optionally N-substituted.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: August 4, 2009
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Michael R. Wasielewski, Antonio Facchetti, Brooks A. Jones
  • Carbonyl-functionalized thiophene compounds and related device structures
    Patent number: 7528176
    Abstract: Carbonyl-functionalized oligo/polythiophene compounds, and related semiconductor components and related device structures.
    Type: Grant
    Filed: September 14, 2005
    Date of Patent: May 5, 2009
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti
  • HOLE TRANSPORT LAYER COMPOSITIONS AND RELATED DIODE DEVICES
    Publication number: 20090062440
    Abstract: Hole transport layer compositions comprising a silylated aryl amine and a polymeric component, to enhance performance of an associated electroluminescent device.
    Type: Application
    Filed: November 7, 2008
    Publication date: March 5, 2009
    Inventors: Tobin J. Marks, He Yan, Qinglan Huang
  • Transparent Nanowire Transistors and Methods for Fabricating Same
    Publication number: 20090050876
    Abstract: Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.
    Type: Application
    Filed: June 2, 2008
    Publication date: February 26, 2009
    Inventors: Tobin J. Marks, David B. Janes, Sanghyun Ju, Peide Ye, Chongwu Zhou, Antonio Facchetti
  • Conjugated monomers and polymers and preparation and use thereof
    Publication number: 20090036643
    Abstract: Disclosed are new conjugated compounds (e.g., monomers and polymers) that include ladder-type moieties which can be used for preparing semiconducting materials. Such conjugated compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. Compounds of the present teachings also can exhibit ambipolar semiconducting activity. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability in ambient conditions.
    Type: Application
    Filed: July 31, 2008
    Publication date: February 5, 2009
    Inventors: Tobin J. Marks, Antonio Facchetti, Hakan Usta
  • Layer by layer self-assembly of large response molecular electro-optic materials by a desilylation strategy
    Patent number: 7476345
    Abstract: The preparation of robust, thin film materials with large second-order optical nonlinearities through the covalent self-assembly of chromophoric compositions and innovative use of silyl chemistry.
    Type: Grant
    Filed: February 10, 2005
    Date of Patent: January 13, 2009
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Milko E. van der Boom
  • n-Type Thiophene Semiconductors
    Publication number: 20080293937
    Abstract: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, ?,?-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
    Type: Application
    Filed: May 1, 2008
    Publication date: November 27, 2008
    Inventors: Tobin J. Marks, Antonio Facchetti
  • Hole transport layer compositions and related diode devices
    Patent number: 7449509
    Abstract: Hole transport layer compositions comprising a silylated aryl amine and a polymeric component, to enhance performance of an associated electroluminescent device.
    Type: Grant
    Filed: December 10, 2004
    Date of Patent: November 11, 2008
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, He Yan, Qinglan Huang
  • Organic semiconductor materials and precursors thereof
    Publication number: 20080249309
    Abstract: The present teachings provide novel organic semiconductor compounds and their soluble precursors, methods for preparing these compounds and precursors, as well as compositions, materials, articles, structures, and devices that incorporate such compounds.
    Type: Application
    Filed: January 23, 2008
    Publication date: October 9, 2008
    Inventors: Antonio Facchetti, Tobin J. Marks, He Yan
  • Gate dielectric structures, organic semiconductors, thin film transistors and related methods
    Publication number: 20080224127
    Abstract: Gate dielectric structures comprising an organic polymeric component, and organic semiconductor components, as can be used to fabricate thin film transistor devices.
    Type: Application
    Filed: August 22, 2007
    Publication date: September 18, 2008
    Inventors: Tobin J. Marks, Antonio Facchetti, Myung-Han Yoon
  • Transparent conducting components and related electro-optic modulator devices
    Publication number: 20080212914
    Abstract: New electro-optic (EO) phase modulator devices and geometries, as can be constructed using a transparent conductive component.
    Type: Application
    Filed: August 1, 2007
    Publication date: September 4, 2008
    Inventors: Tobin J. Marks, Seng-Tiong Ho, Jing Ma, Guoyang Xu
  • Acene-based organic semiconductor materials and methods of preparing and using the same
    Publication number: 20080185555
    Abstract: Acene-based compounds that can be used to prepare n-type semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including n-type semiconductor materials prepared from these compounds also are provided.
    Type: Application
    Filed: November 19, 2007
    Publication date: August 7, 2008
    Inventors: Antonio Facchetti, Tobin J. Marks, Zhiming M. Wang
  • Diimide-based semiconductor materials and methods of preparing and using the same
    Publication number: 20080185577
    Abstract: Diimide-based semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the diimide-based semiconductor materials also are provided.
    Type: Application
    Filed: November 19, 2007
    Publication date: August 7, 2008
    Inventors: Antonio Facchetti, Tobin J. Marks, He Yan
  • Methods for preparing arene-BIS (dicarboximide)-based semiconducting materials and related intermediates for preparing same
    Publication number: 20080177073
    Abstract: The present teachings provide compounds of formulae I and II: where Q, Ra, R1, W, and n are as defined herein. The present teachings also provide methods of preparing compounds of formulae I and II, including methods of preparing compounds of formula II from compounds of formula I. The compounds disclosed herein can be used to prepare semiconductor materials and related composites and electronic devices.
    Type: Application
    Filed: January 7, 2008
    Publication date: July 24, 2008
    Inventors: Antonio Facchetti, Tobin J. Marks, He Yan
  • Vapor deposited electro-optic films self-assembled through hydrogen bonding
    Publication number: 20080171146
    Abstract: The present invention introduces a novel route toward microstructural orientation into organic films, using multiple hydrogen-bonding to self-assemble chromophore molecules into electro-optic films in a net polar orientation. High-quality, thick films (up to micrometers) with molecular net dipole orientations can be fabricated under vacuum in hours. The film microstructure is intrinsically acentric; and the orientation is robust.
    Type: Application
    Filed: November 6, 2007
    Publication date: July 17, 2008
    Inventors: Tobin J. Marks, Peiwang Zhu
  • Organic semiconductor materials and methods of preparing and use thereof
    Publication number: 20080167435
    Abstract: Solution-processable organic n-type semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the organic n-type semiconductor materials also are provided.
    Type: Application
    Filed: October 24, 2007
    Publication date: July 10, 2008
    Inventors: Tobin J. Marks, Antonio Facchetti, He Yan
  • High energy density nanocomposites and related methods of preparation
    Publication number: 20080166483
    Abstract: Metal oxide-polymer composites and methods of preparation.
    Type: Application
    Filed: November 19, 2007
    Publication date: July 10, 2008
    Inventors: Tobin J. Marks, Michael T. Lanagan, Neng Guo, Sara A. DiBenedetto
  • Photopolymer-based dielectric materials and methods of preparation and use thereof
    Publication number: 20080161524
    Abstract: Photopolymer-based dielectric materials are provided with methods for preparing the same. Composites and electronic devices including such dielectric materials also are provided.
    Type: Application
    Filed: November 28, 2007
    Publication date: July 3, 2008
    Inventors: He Yan, Antonio Facchetti, Tobin J. Marks
  • Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof
    Publication number: 20080161464
    Abstract: Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.
    Type: Application
    Filed: June 28, 2007
    Publication date: July 3, 2008
    Inventors: Tobin J. Marks, Antonio Facchetti, Zhiming Wang, Hyuk-Jin Choi
  • n-Type thiophene semiconductors
    Patent number: 7374702
    Abstract: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, ?,?-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.
    Type: Grant
    Filed: January 31, 2006
    Date of Patent: May 20, 2008
    Assignee: Northwestern University
    Inventors: Tobin J. Marks, Antonio Facchetti