Abstract: A system and method for forming a memory having at least 16 megabits (224 bits) and only a single deposition layer of highly conductive interconnects. The resulting semiconductor die or chip fits within existing industry-standard packages with little or no speed loss over previous double metal deposition layered DRAM physical architectures. This is accomplished using a die orientation that allows for a fast single metal speed path. The architecture can be easily replicated to provide larger size memory devices. In addition, a method is described for reducing parasitic resistance in an n-sense amplifier.

Abstract: In a semiconductor memory device, a die architecture is provided that arranges memory arrays into a long, narrow configuration. Bond pads may then be placed along a long side of a correspondingly shaped die. As a result, this architecture is compatible with short lead frame “fingers” for use with wide data busses as part of high speed, multiple band memory integrated circuits.

Abstract: In a semiconductor memory device, a die architecture is provided that arranges memory arrays into a long, narrow configuration. Bond pads may then be placed along a long side of a correspondingly shaped die. As a result, this architecture is compatible with short lead frame “fingers” for use with wide data busses as part of high speed, multiple band memory integrated circuits.

Abstract: A high output, high efficiency charge pump is disclosed and claimed. The charge pump includes a charge storage device. A pre-charge circuit is connected to the charge storage device to charge the charge storage device to a charge level to provide a predetermined output voltage from the charge pump. A blocking circuit is provided to prevent charge leakage from the charge storage device to the pre-charge circuit.

Abstract: A voltage level translator is disclosed which translates a CMOS input signal into a CMOS output signal where the low voltage level of the output signal is equal to the high voltage level of the input signal. The voltage level translator is described in an integrated circuit such as memory circuits, including DRAMs. Specifically, the voltage level translator produces an output signal which can be used as a gate voltage on a pre-charge transistor for a booted circuit where the gate voltage need only drop to the high voltage level of the input signal to shut the transistor off. The voltage level translator described, therefore, reduces the time and power required to translate an input signal by limiting the voltage swing of the output signal.

Abstract: In a semiconductor memory device, a die architecture is provided that arranges memory arrays into a long, narrow configuration. Bond pads may then be placed along a long side of a correspondingly shaped die. As a result, this architecture is compatible with short lead frame “fingers” for use with wide data busses as part of high speed, multiple band memory integrated circuits.

Abstract: In a semiconductor memory device, a die architecture is provided that arranges memory arrays into a long, narrow configuration. Bond pads may then be placed along a long side of a correspondingly shaped die. As a result, this architecture is compatible with short lead frame “fingers” for use with wide data busses as part of high speed, multiple band memory integrated circuits.

Abstract: A multiplexing arrangement for transferring data retrieved from a memory array to data outputs of a semiconductor memory, including a multiplexing circuit that is responsive to latency select signals to cause data retrieved sequentially from the memory array to be loaded into and read from data latch circuits of a data output register in a sequence that establishes a known delay between the time that data is retrieved from the memory array and stored in the data output register and the time that the data is read from the data output register. The delay allows data to be held in the data output register when the data is available and to be passed to the data outputs of the memory when desired.

Abstract: A memory having a control circuit for initiating a read or a write operation in response to a combination of input signals during a setup time is described. The setup time is a specified time period during which all inputs must remain valid before a next appearance of a rising edge of a clock signal. The control circuit uses the setup time to send a signal from one part of the memory to another part of the memory to avoid the propagation delay time. Further, a circuit is provided which prepares the memory for a write operation prior to the setup time.

Abstract: Charge pump circuits are described that transfer a voltage signal in an output stage without signal-level degradation. Where a voltage signal may cause damage to circuitry or semiconductor breakdown, at least one bypass technique is engaged to inhibit such damage or breakdown.

Abstract: The present invention reduces the area on a die required for rows and columns of redundant memory cells by sharing compare circuitry with banks of redundant memory cells based on division of the primary memory array into two or more “planes.” Pass gates or multiplexers coupled between at least two banks of fuses and one compare circuit selectively couple the appropriate fuse bank to the compare circuit. Preferably, a bit in the address (e.g., address bit RA9 in a row address word having address bits A0-RA9) is received by and controls the multiplexer to select between the two banks of fuses. Additionally, the planes span blocks of memory in the memory array, where each block is divided by shared sense amplifiers. As a result, while eight lines are coupled to 16 rows or columns, only eight rows or columns will be active at any one time because isolation gates will enable only eight of the 16 rows or columns within two planes of memory.

Abstract: A semiconductor integrated circuit includes a plurality of programmable elements, each having a first terminal connected to a first power supply potential, and a second terminal. Each of a plurality of first semiconductor switching elements has a first terminal respectively connected to the second terminal of a corresponding one of the plurality of programmable elements and has a second terminal. Each of a plurality of second semiconductor switching elements has a first terminal connected in common to selected ones of the second terminals of the plurality of first semiconductor switching elements and has a second terminal connected to a second power supply potential.

Abstract: A multiplexing arrangement for transferring data retrieved from a memory array to data outputs of a semiconductor memory, including a multiplexing circuit that is responsive to latency select signals to cause data retrieved sequentially from the memory array to be loaded into and read from data latch circuits of a data output register in a sequence that establishes a known delay between the time that data is retrieved from the memory array and stored in the data output register and the time that the data is read from the data output register. The delay allows data to be held in the data output register when the data is available and to be passed to the data outputs of the memory when desired.

Abstract: A voltage level translator is disclosed which translates a CMOS input signal into a CMOS output signal where the low voltage level of the output signal is equal to the high voltage level of the input signal. The voltage level translator is described in an integrated circuit such as memory circuits, including DRAMs. Specifically, the voltage level translator produces an output signal which can be used as a gate voltage on a precharge transistor for a booted circuit where the gate voltage need only drop to the high voltage level of the input signal to shut the transistor off. The voltage level translator described, therefore, reduces the time and power required to translate an input signal by limiting the voltage swing of the output signal.

Abstract: A programmable counter circuit for use in semiconductor memories for generating both sequential and interleave address sequences for block data accesses is disclosed. The output and complementary output of a burst counter circuit are multiplexed to send the proper carry bit information to the row/column counter of a memory device. In interleave mode, the carry bit is forced to match that of the burst counter, thus forcing the row/column counter of the memory device to count in an interleave address sequence. In sequential mode, the start address of the memory access is captured and held. Either the output or complementary output of the burst counter is used to control the column counter based on the captured start address bit. The counter can be programmed to automatically increment the memory address in both a binary and interleave sequence in order to increase the access speed for blocks of sequential data in semiconductor memories.

Abstract: A method and apparatus for transmitting signals between electronic circuits having different power supplies. In one preferred embodiment, an input buffer is provided to a first circuit that uses a first power supply for receiving input signals from a second circuit that uses a second power supply. The input buffer translates the input signal from the second signal level used in the second circuit so as to be compatible with the first circuit. Also, in the preferred embodiment, the input buffer includes a reference voltage generator that generates the reference signal at a level corresponding to a logical threshold or “trip point” voltage level between the high and low voltage states of the second power supply. In particular, the voltage threshold is dynamically self-adjusted in proportion to the second power supply voltage level used in the second circuit.

Abstract: A memory having a control circuit for initiating a read or a write operation in response to a combination of input signals during a setup time is described. The setup time is a specified time period during which all inputs must remain valid before a next appearance of a rising edge of a clock signal. The control circuit uses the setup time to send a signal from one part of the memory to another part of the memory to avoid the propagation delay time. Further, a circuit is provided which prepares the memory for a write operation prior to the setup time.

Abstract: A system and method for forming a memory having at least 16 megabits (224 bits) and only a single deposition layer of highly conductive interconnects. The resulting semiconductor die or chip fits within existing industry-standard packages with little or no speed loss over previous double metal deposition layered DRAM physical architectures. This is accomplished using a die orientation that allows for a fast single metal speed path. The architecture can be easily replicated to provide larger size memory devices. In addition, a method is described for reducing parasitic resistance in an n-sense amplifier.

Abstract: An integrated circuit memory device has a plurality of nonvolatile programmable elements which are used to store a pass/fail status bit at selected milestones in a test sequence. At selected points in the test process an element may be programmed to indicate that the device has passed the tests associated with the selected point in the process. Prior to performing further tests on the device, the element is read to verify that it passed previous tests in the test process. If the appropriate elements are not programmed, the device is rejected. A rejected device may be retested according to the previous test steps. Laser fuses, electrically programmable fuses or antifuses are used to store test results. The use of electrically writeable nonvolatile memory elements allows for programming of the elements after the device has been packaged.

Abstract: A semiconductor device includes a plurality of conductive layers that are formed on the substrate. Two electrically intercoupled sections of a read-only storage element, such as a fuse element, which together compose the storage element, are each formed in a different one of the conductive layers. The storage element has a storage state, and each section has a conductivity. One can change the storage state of the storage element by changing the conductivity of one of the sections. Additionally, multiple storage elements may be coupled in parallel to form a storage module. Each of the storage elements of the storage module may include multiple storage sections that are each formed in a different conductive layer. The storage elements may store the version number of the mask set used to form the semiconductor device. Alternatively, a conductive layer is formed on a substrate, and one or more read-only storage elements are formed in the conductive layer.