Abstract: A display device includes the following: a resin substrate; a TFT layer disposed on the resin substrate, the TFT layer having a stack of, in sequence, a base coat film, a semiconductor film, a gate insulating film, a first metal film, an interlayer insulating film, a second metal film, and a flattening film; a light-emitting element disposed on the TFT layer and forming a display region; and a plurality of TFTs disposed in the TFT layer in the display region. The base coat film includes an amorphous silicon film disposed at least all over the display region.

Abstract: An active matrix substrate including a resin substrate including a plurality of external connection terminals arranged near a display region, the active matrix substrate includes: a plurality of first lead wires each extending from one of the external connection terminals to the display region; and a plurality of second lead wires each extending from one of the external connection terminals to a separation line, the second lead wires being arranged with an arrangement pitch along the separation line, and the arrangement pitch of the second lead wires being greater than an arrangement pitch of the first lead wires.

Abstract: A display device includes: a resin substrate; a TFT layer; and a light-emitting element. A bending portion is provided with a first resin film formed of the same material and in the same layer as those of a first flattening film, and the first resin film fills a slit. An upper face of the first resin film is provided with a plurality of first connection wiring lines formed of a third metal film, and the plurality of first connection wiring lines extend in parallel to each other in a direction intersecting the extending direction of the bending portion. The plurality of first connection wiring lines are electrically connected to a plurality of first lead-out wiring lines, respectively in a display region side of the slit, and electrically connected to a plurality of second lead-out wiring lines, respectively in a terminal portion side of the slit.

Abstract: A first data signal line connected to one of two subpixels that emit light of the same color, a second data signal line connected to the other of the two subpixels, and a correction circuit electrically connected to the first data signal line and the second data signal line are included. When the second data signal line is at a floating potential, the correction circuit allows electrical conduction between the first data signal line and the second data signal line to correct the floating potential.

Abstract: An organic EL display device includes a TFT layer, and a light-emitting element layer provided on the TFT layer. A light emission control transistor of the TFT layer includes a conduction electrode connected to a first electrode of the light-emitting element layer through a contact hole of a flattening film. The TFT layer includes an emission control wiring line connected to the light emission control transistor, an interlayer insulating film provided between the emission control wiring line and the conduction electrode, and a dummy electrode covered with the interlayer insulating film and having an island shape. The dummy electrode overlaps the first electrode, the contact hole, and the conduction electrode in a plan view.

Abstract: Provided is an organic EL display device including a resin substrate layer, a TFT layer provided on the resin substrate layer, and a light-emitting element that is provided on the TFT layer and constitutes a display region. The resin substrate layer includes a first resin layer, an inorganic layer, and a second resin layer, which are provided in that order from a side opposite to the TFT layer. The interior of the first resin layer contains a plurality of air bubbles.

Abstract: A display device includes the following: a resin substrate; a TFT layer disposed on the resin substrate, the TFT layer having a stack of, in sequence, a base coat film, a semiconductor film, a gate insulating film, a first metal film, an interlayer insulating film, a second metal film, and a flattening film; a light-emitting element disposed on the TFT layer and forming a display region; and a plurality of TFTs disposed in the TFT layer in the display region. The base coat film includes an amorphous silicon film disposed at least all over the display region.

Abstract: A display devise includes: a resin substrate; a TFT layer; and a light-emitting element. A bending portion is provided with a first resin film formed of the same material and in the same layer as those of a first flattening film, and the first resin film fills a slit. An upper face of the first resin film is provided with a plurality of first connection wiring lines formed of a third metal film, and the plurality of first connection wiring lines extend in parallel to each other in a direction intersecting the extending direction of the bending portion. The plurality of first connection wiring lines are electrically connected to a plurality of first lead-out wiring lines, respectively in a display region side of the slit, and electrically connected to a plurality of second lead-out wiring lines, respectively in a terminal portion side of the slit.

Abstract: A display device includes: a sealing film provided so as to cover light-emitting elements at least partially constituting a display area and including a first inorganic film, an organic film, and a second inorganic film stacked in this order; and a first damming wall in a frame area around the display area, the first damming wall surrounding the display area and overlapping a peripheral portion of the organic film, wherein at least one inorganic insulation film in a TFT layer has an upwardly open, first opening at least in a part of an area between the display area and the first damming wall, and the organic film is provided so as to fill in the first opening.

Abstract: An active matrix substrate including a resin substrate including a plurality of external connection terminals arranged near a display region, the active matrix substrate includes: a plurality of first lead wires each extending from one of the external connection terminals to the display region; and a plurality of second lead wires each extending from one of the external connection terminals to a separation line, the second lead wires being arranged with an arrangement pitch along the separation line, and the arrangement pitch of the second lead wires being greater than an arrangement pitch of the first lead wires.

Abstract: Provided is an organic EL display device including a resin substrate layer, a TFT layer provided on the resin substrate layer, and a light-emitting element that is provided on the TFT layer and constitutes a display region. The resin substrate layer includes a first resin layer, an inorganic layer, and a second resin layer, which are provided in that order from a side opposite to the TFT layer. The interior of the first resin layer contains a plurality of air bubbles.

Abstract: Reliability of a resin substrate is further enhanced. A first resin layer is made of polymer resin having a long-axis direction. A second resin layer is made of polymer resin having a long-axis direction slanted with respect to the long-axis direction in a plan view.

Abstract: The present application provides a display device and a driving method thereof which can drive a driving transistor with lower power consumption when displaying an image. An organic EL display device applies voltage to switch on/off a driving transistor (M1) to a bottom gate electrode (2) of the driving transistor (M1) having a double gate structure, and applies a data voltage (Vdata) depending on data signals to a top gate electrode (6) as back gate voltage (Vbg). With this configuration, variation width of the voltage value can be smaller in comparison with a case to apply the data voltage to the bottom gate electrode (2).

Abstract: The present application provides a display device and a driving method thereof which can drive a driving transistor with lower power consumption when displaying an image. An organic EL display device applies voltage to switch on/off a driving transistor to a bottom gate electrode of the driving transistor having a double gate structure, and applies a data voltage depending on data signals to a top gate electrode as back gate voltage. With this configuration, variation width of the voltage value can be smaller in comparison with a case to apply the data voltage to the bottom gate electrode.

Abstract: An active matrix substrate is provided with a gate driver including a multi-stage shift register (240). Each stage of the multi-stage shift register has a plurality of oxide semiconductor TFTs, a first input terminal for receiving a set signal, a second input terminal for receiving a clock signal, a third input terminal for receiving a clear signal, and an output terminal for outputting a gate output signal to one of the plurality of gate bus lines. The clock signal and the clear signal have the same high-level potential, and the clock signal and the clear signal have the same low-level potential. The plurality of oxide semiconductor TFTs include a first TFT (101) having a back-gate structure. The main gate electrode of the first TFT (101) is coupled to the third input terminal or a negative power supply voltage VSS. The back-gate electrode of the first TFT has a potential set to a positive power supply voltage VDD or a ground potential GND.

Abstract: The disclosure provides a production method for an EL device including a base material, a TFT layer, and an EL layer; the production method including: forming at least a portion of the base material from a first resin film obtained by curing a first solution applied and a second resin film obtained by curing a second solution applied, wherein a viscosity of the first solution is made higher than a viscosity of the second solution.

Abstract: Reliability of a resin substrate is further enhanced. A first resin layer is made of polymer resin having a long-axis direction. A second resin layer is made of polymer resin having a long-axis direction slanted with respect to the long-axis direction in a plan view.

Abstract: The disclosure provides a production method for an EL device including a base material, a TFT layer, and an EL layer; the production method including: forming at least a portion of the base material from a first resin film obtained by curing a first solution applied and a second resin film obtained by curing a second solution applied, wherein a viscosity of the first solution is made higher than a viscosity of the second solution.

Abstract: A TFT circuit (101) includes a first node (N1) to which a first low potential (Vc) is supplied, a depression-type first TFT (21) which is arranged between the first node (N1) and low-potential wiring (11) for supplying a second low potential (Va) higher than the first low potential (Vc), and in which a drain terminal is connected to the first node, and a depression-type second TFT (22) which is arranged between the first TFT (21) and the low potential wiring (11) and in which a source terminal is connected to a source terminal of the first TFT, in which the first low potential (Vc) is supplied to a gate terminal of the second TFT, a second node (N2) enterable a floating state is formed between the source terminal of the first TFT and the source terminal of the second TFT, and the second node (N2) is connected to a sub-circuit (SC1) which is settable a potential of the second node (N2) to be lower than the second low potential (Va) and higher than the first low potential (Vc).

Abstract: An active matrix substrate is provided with a gate driver including a multi-stage shift register (240). Each stage of the multi-stage shift register has a plurality of oxide semiconductor TFTs, a first input terminal for receiving a set signal, a second input terminal for receiving a clock signal, a third input terminal for receiving a clear signal, and an output terminal for outputting a gate output signal to one of the plurality of gate bus lines. The clock signal and the clear signal have the same high-level potential, and the clock signal and the clear signal have the same low-level potential. The plurality of oxide semiconductor TFTs include a first TFT (101) having a back-gate structure. The main gate electrode of the first TFT (101) is coupled to the third input terminal or a negative power supply voltage VSS. The back-gate electrode of the first TFT has a potential set to a positive power supply voltage VDD or a ground potential GND.