Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn +Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation, and subsequently compacting by charging the granule into a mold, followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.

Abstract: A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10?3 ?·cm to 8.0×10?3 ?·cm a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.

Abstract: There are provided: a thin film transistor substrate provided with an amorphous transparent conductive film in which residue due to etching hardly occurs; a liquid crystal display device which utilizes the thin film transistor substrate; and a method for manufacturing a thin film transistor substrate in which the thin film transistor substrate can be efficiently obtained. Provided is a thin film transistor substrate in which there is provided a transparent substrate, on the transparent substrate there are formed a gate electrode, a semiconductor layer, a source electrode, a drain electrode, a transparent pixel electrode, and a transparent electrode, and the transparent pixel electrode is formed with a transparent conductive film and is electrically connected to the source electrode or the drain electrode, wherein the transparent conductive film which constitutes the transparent pixel electrode is composed of an indium oxide containing gallium.

Abstract: Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element. The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.

Abstract: A capacitive touch panel, which is capable of providing high quality display, without a problem of position detection, even in the case where a production process with lower cost and higher heat load is adopted, by application of a transparent conductive film with high heat resistance; a manufacturing method therefor, and a liquid crystal display apparatus.

Abstract: A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a ?-Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 ?m, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.

Abstract: A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10?3?·cm to 8.0×10?3?·cm, a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.

Abstract: In an absorption type multi-layer film ND filter having a thin substrate and provided thereon first and second absorption type multi-layer films which attenuate transmitted light, the first and second absorption type multi-layer films are constituted of multi-layer films each consisting essentially of dielectric layers formed of SiO2, Al2O3 or a mixture of these and metal film layers formed of Ni alone or an Ni alloy; the layers being alternately layered on the substrate; and the first and second absorption type multi-layer films are so formed on one side and the other side, respectively, of the substrate as to have a film structure in which they are symmetrical to each other interposing the substrate between them, and the warpage of the substrate has been controlled at a curvature of radius of 500 mm or more.

Abstract: A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10?3 ?·cm to 8.0×10?3 ?·cm a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.

Abstract: In an absorption type multi-layer film ND filter having a thin substrate and provided thereon first and second absorption type multi-layer films which attenuate transmitted light, the first and second absorption type multi-layer films are constituted of multi-layer films each consisting essentially of dielectric layers formed of SiO2, Al2O3 or a mixture of these and metal film layers formed of Ni alone or an Ni alloy; the layers being alternately layered on the substrate; and the first and second absorption type multi-layer films are so formed on one side and the other side, respectively, of the substrate as to have a film structure in which they are symmetrical to each other interposing the substrate between them, and the warpage of the substrate has been controlled at a curvature of radius of 500 mm or more.

Abstract: The oxide sintered body mainly consists of gallium, indium, and oxygen, and a content of the gallium is more than 65 at. % and less than 100 at. % with respect to all metallic elements, and the density of the sintered body is 5.0 g/cm3 or more. The oxide film is obtained using the oxide sintered body as a sputtering target, and the shortest wavelength of the light where the light transmittance of the film itself except the substrate becomes 50% is 320 nm or less. The transparent base material is obtained by forming the oxide film on one surface or both surfaces of a glass plate, a quartz plate, a resin plate or resin film where one surface or both surfaces are covered by a gas barrier film, or on one surface or both surfaces of a transparent plate selected from a resin plate or a resin film where the gas barrier film is inserted in the inside.

Abstract: A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a ?-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400)/?-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.

Abstract: The oxide sintered body mainly consists of gallium, indium, and oxygen, and a content of the gallium is more than 65 at. % and less than 100 at. % with respect to all metallic elements, and the density of the sintered body is 5.0 g/cm3 or more. The oxide film is obtained using the oxide sintered body as a sputtering target, and the shortest wavelength of the light where the light transmittance of the film itself except the substrate becomes 50% is 320 nm or less. The transparent base material is obtained by forming the oxide film on one surface or both surfaces of a glass plate, a quartz plate, a resin plate or resin film where one surface or both surfaces are covered by a gas barrier film, or on one surface or both surfaces of a transparent plate selected from a resin plate or a resin film where the gas barrier film is inserted in the inside.

Abstract: The transparent conductive film 1 includes laminated transparent conductive thin films 10 and 20 of at least two layers. The transparent conductive thin film of the uppermost layer is an amorphous oxide thin film composed of gallium, indium, and oxygen, a gallium content ranges from 49.1 atom % to 65 atom % with respect to all metallic atoms, a work function is 5.1 eV or more, and a surface resistance is 100 ?/? or less. The transparent conductive base material includes a transparent substrate and the transparent conductive film 1 formed one or both surfaces of the transparent substrate.

Abstract: A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a ?-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400)/?-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.

Abstract: Provided are an oxide sintered body having zinc oxide as a main component and still more containing magnesium, a target obtained by processing the same, a transparent conductive film having excellent chemical resistance and low resistance, obtained by a direct-current sputtering method or an ion plating method by using the same, and a transparent conductive substrate. Provided are an oxide sintered body having zinc oxide and magnesium, wherein content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Mg); still more, an oxide sintered body having zinc oxide, magnesium, gallium and/or aluminum, wherein content of gallium and/or aluminum is over 0 and equal to or lower than 0.09 as atom number ratio of (Ga+Al)/(Zn+Ga+Al), and content of magnesium is from 0.02 to 0.30 as atom number ratio of Mg/(Zn+Ga+Al+Mg); a target obtained by processing these oxide sintered bodies; and a transparent conductive film formed on a substrate by a sputtering method or an ion plating method, by using this target.

Abstract: A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a ?-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400)/?-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.

Abstract: A new transparent conductive laminated thin film is provided which not only has a high transmittance of light in the visible region and a low surface resistance (6-500 ?/?), but also combines high transmittances of light in the visible region of short wavelengths of 380-400 nm and the near-ultraviolet region of shorter wavelengths of 300-380 nm. The transparent conductive film has a lamination structure that the surfaces of the metallic thin film 11 are coated with the transparent oxide thin films 10 and 12. Each of the transparent oxide thin film 10 and 12 is an amorphous oxide thin film chiefly composed of gallium, indium, and oxygen or composed of gallium and oxygen, and the gallium content of each transparent oxide thin film ranges from 35 at. % to 100 at. % with respect to all metallic atoms.

Abstract: A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10?3 ?·cm to 8.0×10?3 ?·cm, a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.

Abstract: The present invention relates to the oxide sintered body substantially containing zinc, tin and oxygen, useful as a target, which can be sputtered under charging of high DC power, without generation of arcing or crack, and a manufacturing method for an oxide transparent conductive film formable in high-speed, and the oxide transparent conductive film excellent in chemical resistance. The oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.