Abstract: A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a ?-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400)/?-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.

Abstract: The oxide sintered body mainly consists of gallium, indium, and oxygen, and a content of the gallium is more than 65 at. % and less than 100 at. % with respect to all metallic elements, and the density of the sintered body is 5.0 g/cm3 or more. The oxide film is obtained using the oxide sintered body as a sputtering target, and the shortest wavelength of the light where the light transmittance of the film itself except the substrate becomes 50% is 320 nm or less. The transparent base material is obtained by forming the oxide film on one surface or both surfaces of a glass plate, a quartz plate, a resin plate or resin film where one surface or both surfaces are covered by a gas barrier film, or on one surface or both surfaces of a transparent plate selected from a resin plate or a resin film where the gas barrier film is inserted in the inside.

Abstract: An absorption type multi-layer film ND filter having a substrate and an optical multi-layer member consisting essentially of metal layers each composed chiefly of nickel (Ni) and dielectric layers each formed of any one of SiO2, Al2O3 and a mixture of these; the layers being alternately layered on the substrate. An Ni type metallic material having a small wavelength dependence of transmittance in the visible spectral range is used in the metal layers serving as light attenuation layers, and this enables materialization of an ND filter which can attain transmittance attenuation that is flat for wavelengths.

Abstract: The transparent conductive film 1 includes laminated transparent conductive thin films 10 and 20 of at least two layers. The transparent conductive thin film of the uppermost layer is an amorphous oxide thin film composed of gallium, indium, and oxygen, a gallium content ranges from 49.1 atom % to 65 atom % with respect to all metallic atoms, a work function is 5.1 eV or more, and a surface resistance is 100 ?/? or less. The transparent conductive base material includes a transparent substrate and the transparent conductive film 1 formed one or both surfaces of the transparent substrate.

Abstract: There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 ?m so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 ?m; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C.

Abstract: In an absorption type multi-layer film ND filter having a thin substrate and provided thereon first and second absorption type multi-layer films which attenuate transmitted light, the first and second absorption type multi-layer films are constituted of multi-layer films each consisting essentially of dielectric layers formed of SiO2, Al2O3 or a mixture of these and metal film layers formed of Ni alone or an Ni alloy; the layers being alternately layered on the substrate; and the first and second absorption type multi-layer films are so formed on one side and the other side, respectively, of the substrate as to have a film structure in which they are symmetrical to each other interposing the substrate between them, and the warpage of the substrate has been controlled at a curvature of radius of 500 mm or more.

Abstract: An absorption type multi-layer film ND filter having a substrate and an optical multi-layer member consisting essentially of metal layers each composed chiefly of nickel (Ni) and dielectric layers each formed of any one of SiO2, Al2O3 and a mixture of these; the layers being alternately layered on the substrate. An Ni type metallic material having a small wavelength dependence of transmittance in the visible spectral range is used in the metal layers serving as light attenuation layers, and this enables materialization of an ND filter which can attain transmittance attenuation that is flat for wavelengths.

Abstract: There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 ?m so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 ?m; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C.