Abstract: A posture control apparatus, comprising a control unit that determines, on a basis of a static acceleration component, a gravity direction in a holding apparatus holding an object to be held, the static acceleration component being computed on a basis of a first acceleration detection signal and a second acceleration detection signal, the first acceleration detection signal being acquired by detecting a dynamic acceleration component acting on the holding apparatus, the second acceleration detection signal being acquired by detecting the dynamic acceleration component and the static acceleration component acting on the holding apparatus, and controls, by controlling posture of the holding apparatus on a basis of the gravity direction, posture of the object to be held.

Abstract: An attitude control device is provided and includes a control unit that determines a gravity direction in a flying object on a basis of static acceleration components computed on a basis of a first acceleration detection signal obtained by detecting dynamic acceleration components acting on the flying object and a second acceleration detection signal obtained by detecting the dynamic acceleration components and the static acceleration components acting on the flying object, and controls an attitude of the flying object on a basis of the gravity direction.

Abstract: A lubricating oil composition which can reduce the occurrence frequency of LSPI and which can ensure detergency. The lubricating oil composition which includes a lubricant base oil, a compound having calcium and/or magnesium, a compound having molybdenum and/or phosphorus, and an ashless dispersant having nitrogen and which satisfies X??0.85 and Y?0.18 (wherein X is calculated according to formula (1): X=([Ca]+0.5[Mg])×8?[Mo]×8?[P]×30 and Y is calculated according to formula (2): Y=[Ca]+1.65[Mg]+[N]). The lubricating oil composition for use in an internal combustion engine, more particularly, a lubricating oil composition for use in a supercharged gasoline engine.

Abstract: The reinforced polarizing optical film laminate comprises a polarizing film laminate containing an iodine concentration for the polarizing film and a water content for the polarizing film laminate which fall within a region surrounded, in an x-y orthogonal coordinate system in which the iodine concentration of the polarizing film is plotted on the x-axis, and the water content of the polarizing film laminate is plotted on the y-axis, by: a first line segment connecting a first point and a second point; a second line segment connecting the second point and a third point; a third line segment connecting the third point and a fourth point; a fourth line segment connecting the fourth point and a fifth point; and a fifth line segment connecting the first point and the fifth point, wherein the reinforced film laminate has a breaking strength in a MD direction of 135 N/10 mm or more.

Abstract: A toner containing a toner particle that contains a binder resin and a crystalline material, wherein, in measurement of powder dynamic viscoelasticity of the toner, when T(A)° C. is taken as an onset temperature for a storage elastic modulus E? obtained at a ramp rate of 20° C./min, EA?(100) Pa is taken as a storage elastic modulus at 100° C. obtained at a ramp rate of 20° C./min, and T(B)° C. is taken as an onset temperature for a storage elastic modulus E? obtained at a ramp rate of 5° C./min, T(A)?T(B) is 3.0° C. or less, T(A) is from 45.0° C. to 70.0° C., and EA?(100) is from 4.0×109 Pa to 6.5×109 Pa.

Abstract: The polarizing film laminate contains an iodine concentration for the polarizing film and a water content for the polarizing film laminate which fall within a region surrounded, in an x-y orthogonal coordinate system in which the iodine concentration of the polarizing film is plotted on the x-axis, and the water content of the polarizing film laminate is plotted on the y-axis, by: a first line segment connecting a first coordinate point and a second coordinate point; a second line segment connecting the second coordinate point and a third coordinate point; a third line segment connecting the third coordinate point and a fourth coordinate point; a fourth line segment connecting the fourth coordinate point and a fifth coordinate point; and a fifth line segment connecting the first coordinate point and the fifth coordinate point.

Abstract: A toner including a toner particle including a binder resin and a crystalline material, wherein in powder dynamic viscoelasticity measurement of the toner, where an onset temperature of a storage elastic modulus E? obtained when a temperature is raised at 20° C./min is denoted by T(A)° C., and an onset temperature of a storage elastic modulus E? obtained when a temperature is raised at 5° C./min is denoted by T(B)° C., T(A)?T(B) is 3.0° C. or less, in DSC of the toner, a peak temperature of a maximum endothermic peak is from 50.0° C. to 90.0° C., and an amount of a tetrahydrofuran-insoluble component in the binder resin is from 15% by mass to 60% by mass.

Abstract: A toner comprising a toner particle including a binder resin, wherein the toner is such that (1) when a powder dynamic viscoelasticity measurement method is used, a measurement start temperature is set to 25° C., and a ramp rate is set to 20° C./min, on a curve of a storage elastic modulus E? (Pa) where a temperature (° C.) is plotted against an abscissa and the storage elastic modulus E? is plotted against an ordinate, a temperature at a time when the E? at a start of a measurement has decreased by 50% is from 60° C. to 90° C., and (2) a load at a yield point of a displacement-load curve which is determined by a nanoindentation method and where a load (mN) is plotted against an ordinate and a displacement amount (?m) is plotted against an abscissa, is 0.80 mN or more; and a method for producing thereof.

Abstract: A toner comprising a toner particle including a binder resin and a magnetic body, wherein in cross-sectional observation of the toner with a transmission electron microscope, where an area percentage occupied by the magnetic body in a region of 200 nm or less from a contour of a cross section of the toner particle to a centroid of the cross section is taken as A1, and an area percentage occupied by the magnetic body in a region of from 200 nm to 400 nm from the contour of the cross section of the toner particle to the centroid of the cross section is taken as A2, the area percentage A1 is from 38% to 85%, the area percentage A2 is from 0% to 37%, and a ratio A2/A1 of the area percentage A2 to the area percentage A1 is from 0 to 0.75.

Abstract: According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.

Abstract: An aluminum alloy clad material includes a core material, one side being clad with cladding material 1, the other side being clad with cladding material 2, the core material including an aluminum alloy that includes 0.5 to 1.8% of Mn, and limited to 0.05% or less of Cu, with the balance being Al and unavoidable impurities, the cladding material 1 including an aluminum alloy that includes 3 to 10% of Si, and 1 to 10% of Zn, with the balance being Al and unavoidable impurities, and the cladding material 2 including an aluminum alloy that includes 3 to 13% of Si, and limited to 0.05% or less of Cu, with the balance being Al and unavoidable impurities, wherein the Si content X (%) in the cladding material 1 and the Si content Y (%) in the cladding material 2 satisfy the value (Y?X) is ?1.5 to 9%.

Abstract: This power storage apparatus has a case accommodating an electrode assembly and an electrolytic solution, and a release valve present in the wall of the case. The electrode assembly includes electrodes which have different polarities and are insulated from each other. A shielding member is arranged between the inner surface of the wall and the end surface of the electrode assembly. A point located in a center of the case in a front view of the case taken in the stacking direction of the electrodes and located in a center of a dimension of the electrode assembly in the stacking direction is referred to as a center point, and a region surrounded by a plane connecting the center point and a contour of the pressure release valve at a shortest distance is referred to as a three-dimensional region. The shielding member includes a shielding portion that entirely covers a cross section of the three-dimensional region along the end face of the electrode assembly.

Abstract: Provided is a production method for an all-solid-state battery having a solid electrolyte layer between a positive electrode layer and a negative electrode layer, the production method including: coating or impregnating the positive electrode layer and/or the negative electrode layer with a solid electrolyte solution in which a boron hydride compound serving as the solid electrolyte has been dissolved in a solvent; and removing the solvent from the coated or impregnated solid electrolyte solution and causing the solid electrolyte to precipitate on the positive electrode layer and/or the negative electrode layer.

Abstract: A heat regenerating material particle of an embodiment contains a heat regenerating substance having a maximum value of specific heat at a temperature of 20 K or less is 0.3 J/cm3·K or more, and one metal element selected from the group consisting of calcium (Ca), magnesium (Mg), beryllium (Be), strontium (Sr), aluminum (Al), iron (Fe), copper (Cu), nickel (Ni), and cobalt (Co). The heat regenerating material particle includes a first region and a second region, the second region is closer to an outer edge of the heat regenerating material particle than the first region, and the second region has a higher concentration of the metal element than the first region.

Abstract: A semiconductor device includes: a fin that is a portion of a semiconductor substrate, protrudes from a main surface of the semiconductor substrate, has a width in a first direction, and extends in a second direction; a control gate electrode that is arranged on the fin via a first gate insulating film and extends in the first direction; and a memory gate electrode that is arranged on the fin via a second gate insulating film and extends in the first direction. Further, a width of the fin in a region in which the memory gate electrode is arranged via the second gate insulating film having a film thickness larger than the first gate insulating film is smaller than a width of the fin in a region in which the control gate electrode is arranged via the first gate insulating film.

Abstract: A planet gear support shaft includes a cylindrical body that is open at both ends in a central axis direction. The cylindrical body has an inlet port through which lubricating oil is introduced into a hollow portion of the cylindrical body, and a discharge port through which the lubricating oil introduced into the hollow portion is discharged, the inlet port and the discharge port being open to an inner peripheral surface of the hollow portion at different positions in the central axis direction. An oil guide groove is provided between a first opening of the inlet port and a second opening of the discharge port in the inner peripheral surface. The oil guide groove is configured to guide the lubricating oil between the first opening and the second opening.

Abstract: A planetary gear support shaft is provided in a shaft hole of a planetary gear to support the planetary gear. The planetary gear is disposed between an internal gear and an external gear supported coaxially so as to be rotatable relative to each other. The planetary gear support shaft includes a body made of a tubular steel pipe with two open ends, and a pair of lid bodies that block opening portions at the two ends of the body. The body has an in-flow hole that allows lubricating oil to flow into a hollow portion between the pair of lid bodies and an out-flow hole through which the lubricating oil is supplied from the hollow portion into the shaft hole.

Abstract: The steel material for a carburized bearing part according to the present invention contains, by mass %, C: 0.25 to 0.45%, Si: 0.15 to 0.45%, Mn: 0.40 to 1.50%, P: 0.015% or less, S: 0.005% or less, Cr: 0.60 to 2.00%, Mo: 0.10 to 0.35%, V: 0.20 to 0.40%, Al: 0.005 to 0.100%, Ca: 0.0002 to 0.0010%, N: 0.0300% or less and O: 0.0015% or less, with the balance being Fe and impurities, and satisfies Formulae (1) to (3). 1.20<0.4Cr+0.4Mo+4.5V<2.75??(1) A1/A2>0.50??(2) 2.7C+0.4Si+Mn+0.45Ni+0.8Cr+Mo+V>2.55??(3) Formula (2) shows an area fraction of sulfides containing Ca in an amount of 1 mol % or more among sulfides having an equivalent circular diameter of 1 ?m or more.

Abstract: When a memory cell is formed over a first fin and a low breakdown voltage transistor is formed over a second fin, the depth of a first trench for dividing the first fins in a memory cell region is made larger than that of a second trench for dividing the second fins in a logic region. Thereby, in the direction perpendicular to the upper surface of a semiconductor substrate, the distance between the upper surface of the first fin and the bottom surface of an element isolation region in the memory cell region becomes larger than that between the upper surface of the second fin and the bottom surface of the element isolation region in the logic region.

Abstract: On the upper surface of a fin projecting from the upper surface of a semiconductor substrate, there are formed a control gate electrode through a gate insulating film and a memory gate electrode through a gate insulating film. A semiconductor region is formed in the fin beside the control gate electrode. On the semiconductor region, an insulating film, a first interlayer insulating film, and a second interlayer insulating film are formed. A plug reaching the semiconductor region is formed in the second interlayer insulating film, the first interlayer insulating film, and the insulating film. A cap film is formed between the control gate electrode and the interlayer insulating film, and the plug is positioned also right above the cap film.