Abstract: It is an object of the present invention to provide a polarizing plate which has high productivity and can suppress water-induced unevenness, and a method for producing the same. A polarizing plate includes: a retardation film provided on one surface of a polarizer with an adhesive layer interposed therebetween; and a protective film provided on the other surface of the polarizer with an adhesive layer interposed therebetween. The retardation film contains a cellulose resin. After the polarizing plate is immersed in water at 23° C. for 24 hours in a state where the polarizing plate is bonded to a glass plate, and taken out from the water, the polarizing plate has a dimensional change rate of 0.1% or less after 1 minute under an atmosphere of a temperature of 23° C. and humidity of 55%.

Abstract: A bearing constituent member includes a base material including steel and a carbonitrided layer that is a surface layer on the steel, the steel including 0.3 to 0.45 mass % of carbon, 0.5 mass % or lower of silicon, 0.4 to 1.5 mass % of manganese, 0.3 to 2 mass % of chromium, 0.1 to 0.35 mass % of molybdenum, 0.2 to 0.4 mass % of vanadium, and a remainder of iron and unavoidable impurities. Surface Vickers hardness at a position at a depth of 50 ?m from a surface of a rolling sliding surface is 700 to 800, internal hardness is 550 to 690 in terms of Vickers hardness, and an amount of residual austenite in a range from the surface to a depth of 10 ?m is at least 30 vol %.

Abstract: A semiconductor device includes: a fin that is a portion of a semiconductor substrate, protrudes from a main surface of the semiconductor substrate, has a width in a first direction, and extends in a second direction; a control gate electrode that is arranged on the fin via a first gate insulating film and extends in the first direction; and a memory gate electrode that is arranged on the fin via a second gate insulating film and extends in the first direction. Further, a width of the fin in a region in which the memory gate electrode is arranged via the second gate insulating film having a film thickness larger than the first gate insulating film is smaller than a width of the fin in a region in which the control gate electrode is arranged via the first gate insulating film.

Abstract: An ink jet recording method comprising ejecting an ink from a recording head to record an image on a recording medium using an ink jet recording apparatus. The ink jet recording apparatus includes a main tank having an air communication part, a sub tank, and a recording head. The ratio of the maximum ink storage amount of the main tank to the maximum ink storage amount of the sub tank is 3.0 or more to 50.0 or less. The temperature of the ink in the sub tank is higher than the temperature of the ink in the main tank. The ink contains a coloring material and a particular surfactant.

Abstract: An ink jet recording method uses an apparatus including plural aqueous inks including cyan, magenta and yellow inks; a recording head that thermally ejects the inks; a first ink storage portion having an atmosphere communicating portion; a second ink storage portion which is a resinous housing and is directly bonded to the head; and a tube that supplies the inks from the first to second ink storage portions and includes first, second and third tubes corresponding to the respective inks, the second tube having a portion sandwiched between and joined to the first and third tubes. The method includes ejecting the inks from the head to record an image on a recording medium. The difference between the maximum and minimum values of water molar fractions of the cyan, magenta and yellow inks is 5.0% or less. The tube corresponding to the magenta ink is the second tube.

Abstract: Resistance of a gate electrode is reduced in a split gate MONOS memory configured by a fin FET. A memory gate electrode of a split gate MONOS memory is formed of a first polysilicon film, a metal film, and a second polysilicon film formed in order on a fin. A trench between fins adjacent to each other in a lateral direction of the fins is filled with a stacked film including the first polysilicon film, the metal film, and the second polysilicon instead of the first polysilicon film only.

Abstract: A cold forged part having a high cold forgeability and having a high endurance ratio due to work hardening by cold forging and age-hardening after cold forging, characterized by having a predetermined chemical composition, having an amount of solute Nb/amount of solute V of 0.03 or more and having a structure, by area ratio, of ferrite of 85% or more and a total of bainite and martensite of 5% or less.

Abstract: An magnetic material is a magnetic material expressed by a composition formula: (R1-xYx)aMbTcAd, which includes a main phase consisting of a ThMn12 type crystal phase. 30 atomic percent or more of the element M in the composition formula is Fe.

Abstract: An magnetic material is a magnetic material expressed by a composition formula 1: (R1-xYx)aMbTc, which includes a main phase consisting of a ThMn12 type crystal phase. 30 atomic percent or more of the element M in the composition formula 1 is Fe.

Abstract: A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

Abstract: It is an object of the present invention to provide a polarizing plate which can suppress display unevenness even when being incorporated into a liquid crystal display device, has neutral hue, and can maintain cross property even when a low water-vapor permeable protective film is used. It is another object of the present invention to provide a method for manufacturing the same. The polarizing plate includes: a polarizing film; an adhesive layer; and a protective film provided on at least one surface of the polarizing film with the adhesive layer interposed therebetween. A ratio (I285/I480) of absorbance I285 of the polarizing film at 285 nm to absorbance I480 thereof at 480 nm is 1.2 or less. The polarizing plate has a hue b value of 4 or less. The protective film has a water-vapor permeability of 100 g/m2·day or less.

Abstract: A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

Abstract: A polarizing film, comprising a polarizer; transparent protective films with a water-vapor permeability of 150 g/m2/24 hours or less provided on both sides of the polarizer; and adhesive layers each interposed between the polarizer and one of the transparent protective films, wherein the adhesive layers are formed by applying an active energy ray to an active energy ray-curable adhesive composition containing a radically polymerizable compound, and the transparent protective films are bonded to the polarizer with the adhesive layers.

Abstract: An ink jet recording method comprising ejecting an ink from a recording head to record an image on a recording medium using an ink jet recording apparatus. The ink jet recording apparatus includes a main tank, a sub tank, and a recording head. The ratio of the maximum ink storage amount of the main tank to the maximum ink storage amount of the sub tank is 3.0 or more to 50.0 or less. The ink contains a pigment and a particular water-soluble organic solvent. The ratio of the water-soluble organic solvent content to the pigment content is 2.0 or more to 10.0 or less. The ink has a temperature at which the ratio of the viscosity of the ink in the recording head to the viscosity of the ink at a temperature of 25° C. is 0.8 or less.

Abstract: To enhance the performance of a semiconductor device. In a method for manufacturing a semiconductor device, a metal film is formed over a semiconductor substrate having an insulating film formed on a surface thereof, and then the metal film is removed in a memory cell region, whereas, in a part of a peripheral circuit region, the metal film is left. Next, a silicon film is formed over the semiconductor substrate, then the silicon film is patterned in the memory cell region, and, in the peripheral circuit region, the silicon film is left so that an outer peripheral portion of the remaining metal film is covered with the silicon film. Subsequently, in the peripheral circuit region, the silicon film, the metal film, and the insulating film are patterned for forming an insulating film portion formed of the insulating film, a metal film portion formed of the metal film, and a conductive film portion formed of the silicon film.

Abstract: In one embodiment, a permanent magnet has a composition expressed by a composition formula: RNx(CrpSiqM1-p-q)z (R is at least one element selected from Y and rare-earth elements, M is at least one element selected from Fe and Co, and x, p, q, and z are atomic ratios satisfying 0.5?x?2.0, 0.005?p?0.2, 0.005?q?0.2, and 4?z?13, respectively). The permanent magnet has a density of 6.5 g/cm3 or more and satisfies the relationship of I(110)/{I(110)+I(303)}?0.05, in which I(303) represents a diffraction peak intensity from a (303) plane of a Th2Zn17 phase obtained through powder X-ray diffraction of the permanent magnet, and I(110) represents a diffraction peak intensity from a (110) plane of an ?-Fe phase obtained through the powder X-ray diffraction.

Abstract: A polarizing plate includes: a polyvinyl alcohol-based polarizer; and transparent protective films provided on both surfaces of the polyvinyl alcohol-based polarizer with an adhesive layer interposed between each of the transparent protective films and the polyvinyl alcohol-based polarizer. A first transparent protective film contains a (meth)acrylic resin and an ultraviolet absorber, the (meth)acrylic resin having an unsaturated carboxylic acid alkyl ester unit and a glutarimide unit represented by the general formula (1), having an imidization ratio of 2.5 to 5.0% and an acid value of 0.10 to 0.50 mmol/g, and having an acrylic ester unit of less than 1% by weight. A second transparent protective film contains a cycloolefin-based resin. R1 and R2 each independently represent hydrogen or an alkyl group; and R3 represents an alkyl group, a cycloalkyl group, or an aryl group.

Abstract: When a memory cell is formed over a first fin and a low breakdown voltage transistor is formed over a second fin, the depth of a first trench for dividing the first fins in a memory cell region is made larger than that of a second trench for dividing the second fins in a logic region. Thereby, in the direction perpendicular to the upper surface of a semiconductor substrate, the distance between the upper surface of the first fin and the bottom surface of an element isolation region in the memory cell region becomes larger than that between the upper surface of the second fin and the bottom surface of the element isolation region in the logic region.

Abstract: A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

Abstract: A bearing constituent member includes a base material including steel and a carbonitrided layer that is a surface layer on the steel, the steel including 0.3 to 0.45 mass % of carbon, 0.5 mass % or lower of silicon, 0.4 to 1.5 mass % of manganese, 0.3 to 2 mass % of chromium, 0.1 to 0.35 mass % of molybdenum, 0.2 to 0.4 mass % of vanadium, and a remainder of iron and unavoidable impurities. Surface Vickers hardness at a position at a depth of 50 ?m from a surface of a rolling sliding surface is 700 to 800, internal hardness is 550 to 690 in terms of Vickers hardness, and an amount of residual austenite in a range from the surface to a depth of 10 ?m is at least 30 vol %.