Abstract: A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

Abstract: The present invention provides a polarizing plate and an image display system capable of lowering the reflectivity and improving the visibility of a public display. The present invention relates to a polarizing plate which is disposed on a visual recognition side of an image display devise that emits circularly polarized light and which converts the circularly polarized light into linearly polarized light. The polarizing plate preferably has a first optical element and a first polarizer in this order from an incident side of the circularly polarized light. The polarizing plate preferably has a ?/4 plate disposed closer to the visual recognition side than the first polarizer.

Abstract: A semiconductor device includes: a fin that is a portion of a semiconductor substrate, protrudes from a main surface of the semiconductor substrate, has a width in a first direction, and extends in a second direction; a control gate electrode that is arranged on the fin via a first gate insulating film and extends in the first direction; and a memory gate electrode that is arranged on the fin via a second gate insulating film and extends in the first direction. Further, a width of the fin in a region in which the memory gate electrode is arranged via the second gate insulating film having a film thickness larger than the first gate insulating film is smaller than a width of the fin in a region in which the control gate electrode is arranged via the first gate insulating film.

Abstract: A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

Abstract: An ink jet ink set including three aqueous inks of a cyan ink, a magenta ink and a yellow ink, wherein any two inks of the cyan ink, the magenta ink and the yellow ink are inks satisfying the following condition A, and the other ink is an ink satisfying the following condition B: Condition A: an ink containing a first self-dispersible pigment having a functional group that contains a phosphonic acid group and another atomic group and is bonded to a particle surface of the pigment; and Condition B: an ink containing a second self-dispersible pigment having a functional group that contains at least one of a sulfonic acid group and a carboxylic acid group and is bonded to a particle surface of the pigment.

Abstract: It is an object of the present invention to provide a polarizing plate which can suppress display unevenness and yellow discoloration even when being applied to a liquid crystal panel and prevent a change in oblique hue, and a liquid crystal display device including the polarizing plate. A polarizing plate includes: a polyvinyl alcohol-based polarizer; a transparent protective film provided on one surface of the polyvinyl alcohol-based polarizer with an adhesive layer interposed therebetween; and a retardation film provided on the other surface of the polarizer with an adhesive layer interposed therebetween. The transparent protective film contains a (meth)acrylic resin and an ultraviolet absorber. The retardation film contains a cellulose resin and has an in-plane retardation of 5 nm or less and a thickness-direction retardation of 10 nm or less.

Abstract: It is an object of the present invention to provide a polarizing plate which has high productivity and can suppress water-induced unevenness, and a method for producing the same. A polarizing plate includes: a retardation film provided on one surface of a polarizer with an adhesive layer interposed therebetween; and a protective film provided on the other surface of the polarizer with an adhesive layer interposed therebetween. The retardation film contains a cellulose resin. After the polarizing plate is immersed in water at 23° C. for 24 hours in a state where the polarizing plate is bonded to a glass plate, and taken out from the water, the polarizing plate has a dimensional change rate of 0.1% or less after 1 minute under an atmosphere of a temperature of 23° C. and humidity of 55%.

Abstract: An ink jet recording method comprising ejecting an ink from a recording head to record an image on a recording medium using an ink jet recording apparatus. The ink jet recording apparatus includes a main tank having an air communication part, a sub tank, and a recording head. The ratio of the maximum ink storage amount of the main tank to the maximum ink storage amount of the sub tank is 3.0 or more to 50.0 or less. The temperature of the ink in the sub tank is higher than the temperature of the ink in the main tank. The ink contains a coloring material and a particular surfactant.

Abstract: An ink jet recording method comprising ejecting an ink from a recording head to record an image on a recording medium using an ink jet recording apparatus. The ink jet recording apparatus includes a main tank, a sub tank, and a recording head. The ratio of the maximum ink storage amount of the main tank to the maximum ink storage amount of the sub tank is 3.0 or more to 50.0 or less. The ink contains a pigment and a particular water-soluble organic solvent. The ratio of the water-soluble organic solvent content to the pigment content is 2.0 or more to 10.0 or less. The ink has a temperature at which the ratio of the viscosity of the ink in the recording head to the viscosity of the ink at a temperature of 25° C. is 0.8 or less.

Abstract: A polarizing plate includes: a polyvinyl alcohol-based polarizer; and transparent protective films provided on both surfaces of the polyvinyl alcohol-based polarizer with an adhesive layer interposed between each of the transparent protective films and the polyvinyl alcohol-based polarizer. A first transparent protective film contains a (meth)acrylic resin and an ultraviolet absorber, the (meth)acrylic resin having an unsaturated carboxylic acid alkyl ester unit and a glutarimide unit represented by the general formula (1), having an imidization ratio of 2.5 to 5.0% and an acid value of 0.10 to 0.50 mmol/g, and having an acrylic ester unit of less than 1% by weight. A second transparent protective film contains a cycloolefin-based resin. R1 and R2 each independently represent hydrogen or an alkyl group; and R3 represents an alkyl group, a cycloalkyl group, or an aryl group.

Abstract: To provide a semiconductor device having improved performance and reduce a production cost. The semiconductor device has a plurality of photodiodes placed in array form on the main surface of a semiconductor substrate, a p+ type semiconductor region surrounding each photodiode in plan view, and a plurality of transistors placed between the direction-Y adjacent photodiodes. A method of manufacturing the semiconductor device includes forming the p+ type semiconductor region by implanting a p type impurity into the semiconductor substrate through a mask layer opened at a p+ type semiconductor region formation region and implanting an n type impurity into the semiconductor substrate through the mask layer. In the latter step, in the main surface of the semiconductor substrate, an impurity ion is implanted into a region between photodiode formation regions adjacent in the Y direction but not into a region between the photodiode formation regions adjacent in the X direction.

Abstract: It is an object of the present invention to provide a polarizing plate which can suppress display unevenness even when being incorporated into a liquid crystal display device, has neutral hue, and can maintain cross property even when a low water-vapor permeable protective film is used. It is another object of the present invention to provide a method for manufacturing the same. The polarizing plate includes: a polarizing film; an adhesive layer; and a protective film provided on at least one surface of the polarizing film with the adhesive layer interposed therebetween. A ratio (I285/I480) of absorbance I285 of the polarizing film at 285 nm to absorbance I480 thereof at 480 nm is 1.2 or less. The polarizing plate has a hue b value of 4 or less. The protective film has a water-vapor permeability of 100 g/m2·day or less.

Abstract: The present invention improves the performance of an image sensor. In a planar view, fluorine is introduced into a part overlapping with a channel region in a gate electrode GE1 of an amplification transistor and is not introduced into the interior of a semiconductor substrate 1S. Concretely as shown in FIG. 20, a resist film FR1 is patterned in the manner of opening the part planarly overlapping with the channel region in the gate electrode GE1. Then fluorine is injected into the interior of the gate electrode GE1 exposed from an opening OP1 by an ion implantation method using the resist film FR1 in which the opening OP1 is formed as a mask.

Abstract: To enhance the performance of a semiconductor device. In a method for manufacturing a semiconductor device, a metal film is formed over a semiconductor substrate having an insulating film formed on a surface thereof, and then the metal film is removed in a memory cell region, whereas, in a part of a peripheral circuit region, the metal film is left. Next, a silicon film is formed over the semiconductor substrate, then the silicon film is patterned in the memory cell region, and, in the peripheral circuit region, the silicon film is left so that an outer peripheral portion of the remaining metal film is covered with the silicon film. Subsequently, in the peripheral circuit region, the silicon film, the metal film, and the insulating film are patterned for forming an insulating film portion formed of the insulating film, a metal film portion formed of the metal film, and a conductive film portion formed of the silicon film.

Abstract: The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation area of photodiodes, which are included in each of a plurality of pixels that form an image pickup device, is expanded. In the semiconductor device, the gate electrode of an amplification transistor is formed by both a gate electrode part over an active region and a large width part that covers the boundary between the active region and an element isolation region and the active region near the boundary and that has a gate length larger than that of the gate electrode part.

Abstract: To enhance the performance of a semiconductor device. In a method for manufacturing a semiconductor device, a metal film is formed over a semiconductor substrate having an insulating film formed on a surface thereof, and then the metal film is removed in a memory cell region, whereas, in a part of a peripheral circuit region, the metal film is left. Next, a silicon film is formed over the semiconductor substrate, then the silicon film is patterned in the memory cell region, and, in the peripheral circuit region, the silicon film is left so that an outer peripheral portion of the remaining metal film is covered with the silicon film. Subsequently, in the peripheral circuit region, the silicon film, the metal film, and the insulating film are patterned for forming an insulating film portion formed of the insulating film, a metal film portion formed of the metal film, and a conductive film portion formed of the silicon film.

Abstract: To provide a semiconductor device having improved performance and reduce a production cost. The semiconductor device has a plurality of photodiodes placed in array form on the main surface of a semiconductor substrate, a p+ type semiconductor region surrounding each photodiode in plan view, and a plurality of transistors placed between the direction-Y adjacent photodiodes. A method of manufacturing the semiconductor device includes forming the p+ type semiconductor region by implanting a p type impurity into the semiconductor substrate through a mask layer opened at a p+ type semiconductor region formation region and implanting an n type impurity into the semiconductor substrate through the mask layer. In the latter step, in the main surface of the semiconductor substrate, an impurity ion is implanted into a region between photodiode formation regions adjacent in the Y direction but not into a region between the photodiode formation regions adjacent in the X direction.

Abstract: MISFETs after the 32 nm technology node have a High-k gate insulating film and a metal gate electrode. Such MISFETs have the problem that the absolute value of the threshold voltage of n-MISFET and p-MISFET inevitably increases by the subsequent high temperature heat treatment. The threshold voltage is therefore controlled by forming various threshold voltage adjusting metal films on a High-k gate insulating film and introducing a film component from them into the High-k gate insulating film. The present inventors have however revealed that lanthanum or the like introduced into the High-k gate insulating film of the n-MISFET is likely to transfer to the STI region by the subsequent heat treatment. The semiconductor integrated circuit device according to the present invention is provided with an N channel threshold voltage adjusting element outward diffusion preventing region in the surface portion of the element isolation region below and at the periphery of the gate stack of the n-MISFET.

Abstract: The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation area of photodiodes, which are included in each of a plurality of pixels that form an image pickup device, is expanded. In the semiconductor device, the gate electrode of an amplification transistor is formed by both a gate electrode part over an active region and a large width part that covers the boundary between the active region and an element isolation region and the active region near the boundary and that has a gate length larger than that of the gate electrode part.

Abstract: The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation area of photodiodes, which are included in each of a plurality of pixels that form an image pickup device, is expanded. In the semiconductor device, the gate electrode of an amplification transistor is formed by both a gate electrode part over an active region and a large width part that covers the boundary between the active region and an element isolation region and the active region near the boundary and that. has a gate length larger than that of the gate electrode part.