Abstract: A pressure sensor including a sensor chip; a differential pressure diaphragm provided in the center portion of the sensor chip; a first differential pressure gauge formed along a radial direction relative to the center of the differential pressure diaphragm, provided on a first edge of the differential pressure diaphragm; a second differential pressure gauge formed along a circumferential direction, which is perpendicular to the radial direction, provided in the vicinity of the first differential pressure gauge on the first edge of the differential pressure diaphragm; and a static pressure diaphragm disposed between an edge portion of the sensor chip and one of the edges, other than the first edge, of the differential pressure diaphragm, provided to the outside of the differential pressure diaphragm.

Abstract: A pressure sensor comprising: a sensor chip; a differential pressure diaphragm provided in the center portion of the sensor chip; a differential pressure gauge provided in the differential pressure diaphragm; a static pressure diaphragm provided at the outer peripheral portion of the differential pressure diaphragm; a first static pressure gauge formed at an edge portion of the static pressure diaphragm; and a second static pressure gauge formed at a center portion of the static pressure diaphragm.

Abstract: A pressure sensor is provided with a sensor chip having a first semiconductor layer and a second semiconductor layer wherein a pressure-sensitive region is a diaphragm. In the pressure-sensitive region, an open section is formed on the first semiconductor layer, and a recessed section is formed on the second semiconductor layer in the pressure-sensitive region. The recessed section on the second semiconductor layer is larger than the opening section on the first semiconductor layer. An insulating layer may be arranged between the first semiconductor layer and the second semiconductor layer.

Abstract: The pressure sensor according to the present invention has a sensor chip having a first semiconductor layer that has an opening portion, and a second semiconductor layer, formed on the first semiconductor layer, having a recessed portion that forms a diaphragm and a base, having a pressure guiding hole that is connected to the opening portion, bonded to the sensor chip. The recessed portion in the second semiconductor layer is larger than the opening portion of the first semiconductor layer. The opening portion of the first semiconductor layer has an opening diameter on the second semiconductor layer side that is larger than the opening diameter on the base side.

Abstract: A diaphragm is formed at a predetermined location of a sensor chip made of semiconductor material, and a sensor gauge for differential pressure or pressure sensing-use is provided on the sensor chip that includes at least the diaphragm. The sensor gauge has a plurality of sensor gauges synergistically forming a bridge circuit, and are connected to one another with semiconductor resistors, the semiconductor resistors and the sensor gauges are covered with an insulating film, and the number of contact holes, passing through a portion of the insulating film, for electrode line-out use for forming contacts electrically connected to the semiconductor resistors does not exceed the number of sensor gauges.

Abstract: A pressure sensor according to the present invention comprises: a differential pressure diaphragm; a static pressure diaphragm, which is provided to an outer perimeter part of the differential pressure diaphragm; a first static pressure gauge pair that is formed in the end part of the static pressure diaphragm and comprises two static pressure gauges, which are disposed such that they sandwich the differential pressure diaphragm; and a second static pressure gauge pair that is formed in the center part of the static pressure diaphragm and comprises two static pressure gauges which are disposed such that they sandwich the differential pressure diaphragm.

Abstract: A pressure sensor according to the present invention comprises: a differential pressure diaphragm, which is provided to a center part of a sensor chip; a differential pressure gauge, which is provided to a perimeter edge part of the differential pressure diaphragm and is formed in radial directions; a differential pressure gauge, which is disposed at a position at which it opposes the differential pressure gauge and, together with the first differential pressure gauge, sandwiches the differential pressure diaphragm and is formed in perimeter directions, which are perpendicular to the radial directions; a differential pressure gauge, which is provided in the vicinity of the differential pressure gauge and is provided in the perimeter directions; a differential pressure gauge, which is disposed at a position at which it opposes the differential pressure gauge and, together with the differential pressure gauge, sandwiches the differential pressure diaphragm and is formed in the radial directions; a static pressu

Abstract: To provide a gas sensor chip, and a gas sensor provided therewith, capable of producing stable output characteristics over an extended period of time even when installed in a harsh environment such as a boiler smokestack carrying exhaust gasses. There is a backside structure wherein a catalyst carrier that contacts a gas to be measured is disposed on one side of a thermal conductor, a temperature sensing portion is disposed in a location that does not contact the gas to be measured, on the other side of the thermal conductor, and the temperature sensing portion measures the temperature corresponding to the temperature of the catalyst carrier through the thermal conductor, to enable the sensing of the amount of flow over an extended period of time without the temperature sensing portion being negatively affected by the gas to be measured.

Abstract: In a pressure sensor comprising a diaphragm formed on a portion of a chip made of semiconductor material and that senses pressure on the diaphragm by electrically converting the displacement corresponding to that pressure, the provision of the diaphragm with an aspect ratio of at least a size such that the derivative of the characteristic curve of the allowable pressure resistance of the pressure sensor, defined by setting the aspect ratio obtained by dividing the length of one side of the diaphragm by the thickness of the diaphragm as the horizontal axis and by setting the allowable pressure resistance of the pressure sensor as the vertical axis, becomes nearly zero, enables a pressure sensor having high sensitivity and high pressure resistance.

Abstract: In a pressure sensor comprising a diaphragm formed on a portion of a chip made of semiconductor material and that senses pressure on the diaphragm by electrically converting the displacement corresponding to that pressure, the provision of the diaphragm with an aspect ratio of at least a size such that the derivative of the characteristic curve of the allowable pressure resistance of the pressure sensor, defined by setting the aspect ratio obtained by dividing the length of one side of the diaphragm by the thickness of the diaphragm as the horizontal axis and by setting the allowable pressure resistance of the pressure sensor as the vertical axis, becomes nearly zero, enables a pressure sensor having high sensitivity and high pressure resistance.

Abstract: A diaphragm is formed at a predetermined location of a sensor chip made of semiconductor material, and a sensor gauge for differential pressure or pressure sensing-use is provided on the sensor chip that includes at least the diaphragm. The sensor gauge has a plurality of sensor gauges synergistically forming a bridge circuit, and are connected to one another with semiconductor resistors, the semiconductor resistors and the sensor gauges are covered with an insulating film, and the number of contact holes, passing through a portion of the insulating film, for electrode line-out use for forming contacts electrically connected to the semiconductor resistors does not exceed the number of sensor gauges.