Patents by Inventor Tomoki Inoue
Tomoki Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130335606Abstract: Provides an imaging device including, imaging element in which plural first lines arrayed with first phase difference detection pixels, and plural second lines arrayed with second phase difference detection pixels, are arrayed alternately; reading out section read out signals of the phase difference detection pixels; first correlation computing section carry out first correlation computation on signals read out from a set of the first and the second phase difference detection pixel; second correlation computing section carry out second correlation computation on signals read out from at least one set among a set of plural first phase difference detection pixels of the first line, and a set of plural second phase difference detection pixels of the second line; correcting section corrects results of the first correlation computation, by results of the second correlation computation; and focusing section control focusing based on the corrected correlation computation.Type: ApplicationFiled: August 23, 2013Publication date: December 19, 2013Applicant: FUJIFILM CorporationInventors: Takashi AOKI, Tomoki INOUE
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Patent number: 8609200Abstract: In a hose having a resin layer as an inner layer, a plasma treatment is performed on the inner surface of the inner layer and a connecting portion of an end part of the hose to thereby perform surface modification. Then, a sealing layer made of an elastic material is coated on and bonded to the inner surface of the connecting portion.Type: GrantFiled: April 6, 2009Date of Patent: December 17, 2013Assignee: Tokai Rubber Industries, Ltd.Inventors: Tomoki Inoue, Kazutaka Katayama
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Publication number: 20130329095Abstract: An imaging device includes an image pick-up device including phase difference detection pixel pairs, each formed from a pair of phase difference detection pixels respectively having their openings eccentrically formed on opposite sides of a main axis of an imaging lens, and imaging pixel pairs; a reading section that reads out signals from the pixels arrayed in the image pick-up device using a rolling shutter method; a first correlation computation section that performs correlation computation on the signals from the phase difference detection pixel pairs; a second correlation computation section that performs correlation computation on the signals from the imaging pixel pairs; a correction section that corrects a result from the first correlation computation section using a result from the second correlation computation section; and a focusing section that performs focus control using the corrected result.Type: ApplicationFiled: August 14, 2013Publication date: December 12, 2013Applicant: FUJIFILM CorporationInventors: Takashi AOKI, Tomoki INOUE
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Publication number: 20130272493Abstract: A radiographic imaging device includes a compression plate, irradiation detection sections, and a correction section. The compression plate that compresses an imaging site of a subject between the compression plate and an imaging face of an imaging table, and that inclines with respect to the imaging face in accordance with the imaging site during the compression. The irradiation detection sections, each of which is provided at a different position on the imaging face and detects an irradiation amount of irradiated radiation. The correction section that corrects detection results from the plural irradiation detection sections using correction coefficients that are based on the thickness of the imaging site compressed by the compression plate and on the positions of the plural irradiation detection sections.Type: ApplicationFiled: April 4, 2013Publication date: October 17, 2013Applicant: FUJIFILM CorporationInventors: Shinji OTOKUNI, Tomoki Inoue
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Patent number: 8534711Abstract: Piping unit for transporting a fuel is constructed by connecting a resin tube and a connector for connecting the resin tube to a mating pipe. The connector has a connector body including a retainer holding portion and a retainer for engaging with the mating pipe. The resin tube has a multilayered construction including an inner fuel barrier layer and an outer layer covered with a protective layer. The outer layer has a small outer diameter (od) up to 6 mm, the fuel barrier layer and the outer layer have a wall-thickness (t), and a ratio of the outer diameter (od)/the wall thickness (t) is in a range of 4 to 8.Type: GrantFiled: December 1, 2008Date of Patent: September 17, 2013Assignee: Tokai Rubber Industries, Ltd.Inventors: Tomoki Inoue, Masayuki Sasagawa
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Patent number: 8371409Abstract: A piping structure for transporting a fuel arranged between an engine and a fuel tank, is constructed by use of a resin tube that is formed in a straight tubular shape. The resin tube is flexed and bent at one or more points along a longitudinal direction of the resin tube to define one or more bent portions and thereby is provided with a predetermined bent shape. The resin tube is fixed in a motor vehicle body so as to retain the bent portions and thereby assembled in the motor vehicle body.Type: GrantFiled: September 13, 2010Date of Patent: February 12, 2013Assignee: Tokai Rubber Industries, Ltd.Inventors: Tomoki Inoue, Masayuki Sasagawa
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Patent number: 8319314Abstract: A semiconductor device comprises a first base layer of a first conductivity type; a plurality of second base layers of a second conductivity type, provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers, and formed to be deeper than the second base layers; an emitter layer formed along the trench on a surface of the second base layers; a collector layer of the second conductivity type, provided on a second surface of the first base layer opposite to the first surface; an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated from the second base layers and the emitter layer by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being deeper than the second base layers and being electrically isolated from the emitter layer and tType: GrantFiled: January 13, 2011Date of Patent: November 27, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Tsuneo Ogura, Masakazu Yamaguchi, Tomoki Inoue, Hideaki Ninomiya, Koichi Sugiyama
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Publication number: 20110101417Abstract: A semiconductor device comprises a first base layer of a first conductivity type; a plurality of second base layers of a second conductivity type, provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers, and formed to be deeper than the second base layers; an emitter layer formed along the trench on a surface of the second base layers; a collector layer of the second conductivity type, provided on a second surface of the first base layer opposite to the first surface; an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated from the second base layers and the emitter layer by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being deeper than the second base layers and being electrically isolated from the emitter layer and tType: ApplicationFiled: January 13, 2011Publication date: May 5, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tsuneo OGURA, Masakazu Yamaguchi, Tomoki Inoue, Hideaki Ninomiya, Koichi Sugiyama
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Patent number: 7932942Abstract: A solid-state imaging device is provided and has: three photoelectric conversion layers stacked above a semiconductor substrate 1, each detecting a different color; three signal charge accumulators in a semiconductor substrate for accumulating signal charges generated in each of the three photoelectric conversion layers: and a signal readout circuit in the semiconductor substrate for reading out signals corresponding to the signal charges accumulated in the signal charge accumulators. The three signal charge accumulators are arranged in a direction in the surface of the semiconductor substrate as a pixel and a plurality of the pixels are arranged in a square lattice pattern both in the direction and a direction perpendicular thereto. The three signal charge accumulators arranged in each pixel in an odd row are arranged such that an array of the signal charge accumulators in the first sub-row of each pixel has all of the three signal charge accumulators.Type: GrantFiled: February 14, 2006Date of Patent: April 26, 2011Assignee: Fujifilm CorporationInventors: Tomoki Inoue, Atsuhiko Ishihara
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Publication number: 20110031052Abstract: A piping structure for transporting a fuel arranged between an engine and a fuel tank, is constructed by use of a resin tube that is formed in a straight tubular shape. The resin tube is flexed and bent at one or more points along a longitudinal direction of the resin tube to define one or more bent portions and thereby is provided with a predetermined bent shape. The resin tube is fixed in a motor vehicle body so as to retain the bent portions and thereby assembled in the motor vehicle body.Type: ApplicationFiled: September 13, 2010Publication date: February 10, 2011Applicant: Tokai Rubber Industries, Ltd.Inventors: Tomoki Inoue, Masayuki Sasagawa
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Patent number: 7859010Abstract: A semiconductor substrate has a second conductivity type cathode layer formed thereon. The cathode layer has a first conductivity type base layer formed thereon. A first anode region of the second conductivity type is formed in the surface of the base layer. A second anode region of the first conductivity type is formed in the first anode region. A first semiconductor region of the first conductivity type is formed in contact with the semiconductor substrate. A second semiconductor region of the second conductivity type is formed adjacent to the first semiconductor region and in contact with the cathode layer. An intermediate electrode is formed on the surfaces of the first semiconductor region and the contact region.Type: GrantFiled: January 15, 2008Date of Patent: December 28, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Tomoki Inoue
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Patent number: 7806213Abstract: A piping structure for transporting a fuel arranged between an engine and a fuel tank, is constructed by use of a resin tube that is formed in a straight tubular shape. The resin tube is flexed and bent at one or more points along a longitudinal direction of the resin tube to define one or more bent portions and thereby is provided with a predetermined bent shape. The resin tube is fixed in a motor vehicle body so as to retain the bent portions and thereby assembled in the motor vehicle body.Type: GrantFiled: December 15, 2005Date of Patent: October 5, 2010Assignee: Tokai Rubber Industries, Ltd.Inventors: Tomoki Inoue, Masayuki Sasagawa
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Patent number: 7800168Abstract: A semiconductor device includes a base layer of a first conductivity type, a barrier layer of a first conductivity type formed on the base layer, a trench formed from the surface of the barrier layer to such a depth as to reach a region in the vicinity of an interface between the barrier layer and the base layer, a gate electrode formed in the trench via a gate insulating film, a contact layer of a second conductivity type selectively formed in a surface portion of the barrier layer, a source layer of the first conductivity type selectively formed in the surface portion of the barrier layer so as to contact the contact layer and a side wall of the gate insulating film in the trench, and a first main electrode formed so as to contact the contact layer and the source layer.Type: GrantFiled: August 3, 2007Date of Patent: September 21, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Tsuneo Ogura, Tomoki Inoue, Hideaki Ninomiya, Koichi Sugiyama
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Patent number: 7781869Abstract: A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.Type: GrantFiled: August 4, 2006Date of Patent: August 24, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Tomoki Inoue, Koichi Sugiyama, Hideaki Ninomiya, Tsuneo Ogura
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Patent number: 7750439Abstract: An ESD protection device includes: a semiconductor substrate of a first conductivity type having a first major surface and a second major surface; a signal input electrode formed on the first major surface of the semiconductor substrate; a base region of a second conductivity type formed on a surface region of the second major surface of the semiconductor substrate; a diffusion region of the first conductivity type; a resistor layer formed on the second major surface of the semiconductor substrate of the first conductivity type; a signal output electrode electrically connected to the diffusion region of the first conductivity type; and a ground electrode electrically connected to the resistor layer. The diffusion region is selectively formed on a surface region of the base region of the second conductivity type in the semiconductor substrate of the first conductivity type. The resistor layer is electrically connected to the diffusion region of the first conductivity type.Type: GrantFiled: November 28, 2006Date of Patent: July 6, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Tomoki Inoue
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Patent number: 7733403Abstract: A driving section 4 supplies a reading pulse of ‘H’ to electrodes V1 and V5 simultaneously with completion of exposure to read out electric charges to empty packets below electrodes V1, V2, V5, and V6. Then, the driving section 4 supplies a driving pulse of ‘M’ to electrodes V3 and V7 and a multiplication pulse to the electrodes V2 and V6. At this time, a level of the multiplication pulse supplied to the electrodes V2 and V6 is set so that a potential difference between the electrodes V1 and V3 and the electrode V2 and a potential difference between the electrodes V5 and V7 and the electrode V6 become values required to cause avalanche multiplication. Electric charges accumulated below the electrodes V1 to V3 move into packets formed below the electrodes V2 and V6. The avalanche multiplication occurs at the time of movement. Thus, the electric charges are multiplied.Type: GrantFiled: June 4, 2007Date of Patent: June 8, 2010Assignee: FUJIFILM CORPORATIONInventor: Tomoki Inoue
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Patent number: 7642599Abstract: A semiconductor device disclosed herein comprises: a first base region which is of a first conductivity type; a second base region which is of a second conductivity type and which is selectively formed on a major surface of the first base region; a stopper region which is of a first conductivity type and which is formed on the major surface of the first base region, the stopper region being a predetermined distance away from the second base region and surrounding the second base region; and a ring region which is of a second conductivity type which is formed on the major surface of the first base region between the second base region and the stopper region, the ring region being spirally around the second base region and electrically connected to the second base region and the stopper region.Type: GrantFiled: January 13, 2006Date of Patent: January 5, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Ninomiya, Tomoki Inoue
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Patent number: 7639061Abstract: According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control electrode, a current flowing between the first and second main electrodes being controlled by a control signal which is input between the control electrode and the second main electrode; and a capacitor formed by providing an insulating layer between the second main electrode and the control electrode of the semiconductor element.Type: GrantFiled: October 30, 2006Date of Patent: December 29, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Sugiyama, Tomoki Inoue
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Publication number: 20090293974Abstract: Piping unit for transporting a fuel is constructed by connecting a resin tube and a connector for connecting the resin tube to a mating pipe. The connector has a connector body including a retainer holding portion and a retainer for engaging with the mating pipe. The resin tube has a multilayered construction including an inner fuel barrier layer and an outer layer covered with a protective layer. The outer layer has a small outer diameter (od) up to 6 mm, the fuel barrier layer and the outer layer have a wall-thickness (t), and a ratio of the outer diameter (od)/the wall thickness (t) is in a range of 4 to 8.Type: ApplicationFiled: December 1, 2008Publication date: December 3, 2009Applicant: TOKAI RUBBER INDUSTRIES, LTD.Inventors: Tomoki Inoue, Masayuki Sasagawa
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Publication number: 20090197016Abstract: In a hose having a resin layer as an inner layer, a plasma treatment is performed on the inner surface of the inner layer and a connecting portion of an end part of the hose to thereby perform surface modification. Then, a sealing layer made of an elastic material is coated on and bonded to the inner surface of the connecting portion.Type: ApplicationFiled: April 6, 2009Publication date: August 6, 2009Applicant: TOKAI RUBBER INDUSTRIES, LTD.Inventors: Tomoki Inoue, Kazutaka Katayama