Patents by Inventor Tomoshi Taniyama
Tomoshi Taniyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11155920Abstract: Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.Type: GrantFiled: April 8, 2020Date of Patent: October 26, 2021Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari Yoshida, Tomoshi Taniyama, Takayuki Nakada
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Publication number: 20210305067Abstract: There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.Type: ApplicationFiled: March 25, 2021Publication date: September 30, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Daigi KAMIMURA, Tomoshi TANIYAMA, Kenji SHIRAKO, Hironori SHIMADA, Akira HORII, Takayuki NAKADA, Norihiro YAMASHIMA
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Patent number: 11124873Abstract: A substrate processing apparatus including a transfer chamber; upper gas supply mechanism that supplies a gas into an upper region of the transfer chamber through a first gas supply port; and lower gas supply mechanism that supplies the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber disposed at a back surface of the first gas supply port; a pair of upper ducts disposed at both sides of the first buffer chamber; and a first ventilation unit disposed at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber disposed at a back surface of the second gas supply port; a lower duct disposed at lower surface of the second buffer chamber; and a second ventilation unit disposed at a lower end of the lower duct.Type: GrantFiled: December 30, 2019Date of Patent: September 21, 2021Assignee: Kokusai Electric CorporationInventors: Takayuki Nakada, Tomoshi Taniyama, Kenji Shirako
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Patent number: 11104997Abstract: Described herein is a technique capable of substantially cancelling out a machine difference of a pressure control valve. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a sensor detecting a valve opening degree; a first control circuit outputting a valve opening degree control signal based on a valve opening degree value detected by the sensor and a deviation between a pressure of the process chamber and a target vacuum pressure value; a second control circuit outputting an electropneumatic control signal based on the valve opening degree control signal; and a span adjustment circuit adjusting the first or second control circuit so that an upper limit value of the valve opening degree is set to a predetermined full opening degree less than a physically defined full opening degree.Type: GrantFiled: September 4, 2019Date of Patent: August 31, 2021Assignee: Kokusai Electric CorporationInventors: Naoya Miyashita, Tomoshi Taniyama
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Publication number: 20210254211Abstract: A substrate processing apparatus including a transfer chamber; upper gas supply mechanism that supplies a gas into an upper region of the transfer chamber through a first gas supply port; and lower gas supply mechanism that supplies the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber disposed at a back surface of the first gas supply port; a pair of upper ducts disposed at both sides of the first buffer chamber; and a first ventilation unit disposed at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber disposed at a back surface of the second gas supply port; a lower duct disposed at lower surface of the second buffer chamber; and a second ventilation unit disposed at a lower end of the lower duct.Type: ApplicationFiled: May 6, 2021Publication date: August 19, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Takayuki NAKADA, Tomoshi TANIYAMA, Kenji SHIRAKO
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Publication number: 20210217634Abstract: A substrate processing apparatus includes a first processing module including a first processing module, a second processing module, a first utility system adjacent to a back surface of the first processing module, and a second utility system adjacent to a back surface of the second processing module, a first exhaust box of the first utility system and a second exhaust box of the second utility system being disposed to face each other across a maintenance area located behind a part of the back surface of the first processing module that is close to the second processing module and behind a part of the back surface of the second processing module that is close to the first processing module, and a first supply box of the first utility system and a second supply box of the second utility system being disposed to face each other across the maintenance area.Type: ApplicationFiled: March 31, 2021Publication date: July 15, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Daigi KAMIMURA, Tomoshi TANIYAMA, Takashi NOGAMI
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Patent number: 11062918Abstract: A substrate processing apparatus includes a first processing module including a first processing module, a second processing module, a first utility system adjacent to a back surface of the first processing module, and a second utility system adjacent to a back surface of the second processing module, a first exhaust box of the first utility system and a second exhaust box of the second utility system being disposed to face each other across a maintenance area located behind a part of the back surface of the first processing module that is close to the second processing module and behind a part of the back surface of the second processing module that is close to the first processing module, and a first supply box of the first utility system and a second supply box of the second utility system being disposed to face each other across the maintenance area.Type: GrantFiled: September 16, 2019Date of Patent: July 13, 2021Assignee: KOKUSAI ELECTRIC CORPOTATIONInventors: Daigi Kamimura, Tomoshi Taniyama, Takashi Nogami
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Publication number: 20210207265Abstract: According to one aspect of the technique, there is provided a substrate processing apparatus including: a substrate retainer supporting substrates; a reaction tube accommodating the substrate retainer, including: a ceiling closing an upper end thereof; and an opening provided at a lower end thereof; a heater provided around the reaction tube and heating an inside of the reaction tube; a gas supplier supplying a process gas to the substrates; a gas discharger communicating with the inside of the reaction tube and exhausting an inner atmosphere of the reaction tube; and a break filter provided in middle of a gas flow path from the gas supplier to the gas discharger in the reaction tube, disposed more downstream than the substrates along the gas flow path and configured to receive heat from an exhaust gas, wherein an inert gas is supplied into the reaction tube through the break filter.Type: ApplicationFiled: March 18, 2021Publication date: July 8, 2021Inventors: Hironori SHIMADA, Tomoshi TANIYAMA
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Publication number: 20210159083Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.Type: ApplicationFiled: February 3, 2021Publication date: May 27, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari YOSHIDA, Shigeru ODAKE, Tomoshi TANIYAMA, Takayuki NAKADA
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Publication number: 20210147978Abstract: According to the technique of the disclosure, there is provided a substrate processing apparatus including: a substrate retainer; a heat insulating assembly; a process chamber; a gas supplier including openings bored toward the wafer; a gas discharger including main exhaust openings bored toward the wafer; an exhaust port; an intermediate exhaust opening provided on a side wall of the process chamber at a position facing the heat insulating assembly; and a supply chamber exhaust port provided on the side wall of the process chamber at a height corresponding to the intermediate exhaust opening. The heat insulating assembly includes a constriction at a position corresponding to the intermediate exhaust opening, wherein its outer diameter is smaller than that of a portion of the heat insulating assembly above the position and that of another portion of the heat insulating assembly below the position.Type: ApplicationFiled: January 8, 2021Publication date: May 20, 2021Inventors: Sadao HISAKADO, Tomoshi TANIYAMA
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Patent number: 10950457Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.Type: GrantFiled: September 5, 2019Date of Patent: March 16, 2021Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari Yoshida, Shigeru Odake, Tomoshi Taniyama, Takayuki Nakada
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Publication number: 20210043485Abstract: There is provided a technique that includes: a substrate holder; a reaction tube accommodating the substrate holder; a furnace body surrounding the reaction tube; a gas supplier including inlets corresponding to substrates held in the reaction tube and supplying gases from the inlets in parallel to surfaces of the substrates; and a gas exhauster including an outlet facing lateral sides of the substrates and exhausting the gases flowing on the surfaces of the substrates, wherein the substrate holder includes: annular members each arranged concentrically with the rotation axis at a predetermined pitch on planes orthogonal to the rotation axis; columns each arranged along a circumscribed circle substantially coinciding with outer circumferences of the annular members, and holding the plurality of annular members; and supports supporting the substrates at positions between two adjacent annular members.Type: ApplicationFiled: August 7, 2020Publication date: February 11, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Shuhei Saido, Hironori Shimada, Tomoshi Taniyama, Daigi Kamimura, Takafumi Sasaki
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Publication number: 20210002768Abstract: Described herein is a technique capable of improving a uniformity of a semiconductor manufacturing process by placing a substrate at an appropriate position on the basis of actual installation dimensions of a reaction tube. According to one aspect of the technique, there is provided a substrate processing apparatus including: a boat on which substrates are placed; a process furnace including a reaction tube into which the boat is to be inserted, wherein a film is formed on the substrates placed on the boat in the reaction tube; and a substrate transport device configured to transfer the substrates into the boat, wherein the substrates are transferred into the boat by the substrate transport device referring to a virtual center axis of the reaction tube measured in advance.Type: ApplicationFiled: September 22, 2020Publication date: January 7, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Motoya TAKEWAKI, Tomoshi TANIYAMA
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Publication number: 20200407845Abstract: There is provided a technique that includes: removing a deposit adhering to an inside of a process container by supplying a cleaning gas into the process container after performing a process of forming a film on a substrate in the process container, wherein the act of removing the deposit includes sequentially and repeatedly performing: a first process of supplying the cleaning gas into the process container until a predetermined first pressure is reached in the process container; a second process of stopping the supply of the cleaning gas and exhausting the cleaning gas and a reaction product generated by the cleaning gas remaining in the process container; and a third process of cooling an exhaust pipe that connects the process container and a vacuum pump, while maintaining a pressure inside the process container at a second pressure, which is lower than the first pressure, or lower.Type: ApplicationFiled: August 21, 2020Publication date: December 31, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Naoya MIYASHITA, Koei KURIBAYASHI, Tomoshi TANIYAMA
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Patent number: 10811271Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.Type: GrantFiled: September 30, 2014Date of Patent: October 20, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari Yoshida, Shigeru Odake, Tomoshi Taniyama, Takayuki Nakada
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Publication number: 20200240019Abstract: Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.Type: ApplicationFiled: April 8, 2020Publication date: July 30, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari YOSHIDA, Tomoshi TANIYAMA, Takayuki NAKADA
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Patent number: 10689758Abstract: Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.Type: GrantFiled: March 2, 2018Date of Patent: June 23, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hidenari Yoshida, Tomoshi Taniyama, Takayuki Nakada
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Publication number: 20200131631Abstract: A substrate processing apparatus including a transfer chamber; upper gas supply mechanism that supplies a gas into an upper region of the transfer chamber through a first gas supply port; and lower gas supply mechanism that supplies the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber disposed at a back surface of the first gas supply port; a pair of upper ducts disposed at both sides of the first buffer chamber; and a first ventilation unit disposed at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber disposed at a back surface of the second gas supply port; a lower duct disposed at lower surface of the second buffer chamber; and a second ventilation unit disposed at a lower end of the lower duct.Type: ApplicationFiled: December 30, 2019Publication date: April 30, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Takayuki NAKADA, Tomoshi TANIYAMA, Kenji SHIRAKO
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Patent number: 10636681Abstract: A substrate processing apparatus includes a first processing module including a first processing module, a second processing module, a first utility system adjacent to a back surface of the first processing module, and a second utility system adjacent to a back surface of the second processing module, a first exhaust box of the first utility system and a second exhaust box of the second utility system being disposed to face each other across a maintenance area located behind a part of the back surface of the first processing module that is close to the second processing module and behind a part of the back surface of the second processing module that is close to the first processing module, and a first supply box of the first utility system and a second supply box of the second utility system being disposed to face each other across the maintenance area.Type: GrantFiled: December 28, 2018Date of Patent: April 28, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Daigi Kamimura, Tomoshi Taniyama, Takashi Nogami
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Patent number: D939459Type: GrantFiled: December 10, 2019Date of Patent: December 28, 2021Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hironori Shimada, Daigi Kamimura, Tomoshi Taniyama, Shuhei Saido, Takafumi Sasaki