Abstract: A transparent conductive film includes a polymeric film substrate and a transparent conductive layer on at least one of main surfaces of the polymeric film substrate. The transparent conductive layer is a crystalline transparent conductive layer comprising an indium tin composite oxide. The transparent conductive layer has a residual stress of less than or equal to 600 MPa. The transparent conductive layer has a specific resistance of 1.1×10?4 ?·cm to 3.0×10?4 ?·cm. The transparent conductive layer has a thickness of 15 nm to 40 nm.

Abstract: In a sputtering device, a supply-side film roll chamber includes a supply-side vacuum pump and a supply-side main valve. A storage-side film roll chamber includes a storage-side vacuum pump and a storage-side main valve. A supply-side load-lock valve is provided between the supply-side film roll chamber and a layer forming chamber. A storage-side load-lock valve is provided between the storage-side film roll chamber and the layer forming chamber. In a method for replacing a film roll, a supply-side main valve and a supply-side load-lock valve are closed when replacing a supply-side film roll. A storage side-main valve and a storage-side load-lock valve are closed when replacing a storage-side film roll.

Abstract: There is provided a transparent conductive film having a transparent conductor layer with a high level of pen input durability and high-temperature, high-humidity reliability. The transparent conductive film of the present invention is a transparent conductive film, comprising: a transparent film substrate; a transparent conductor layer that is provided on one side of the transparent film substrate and has a thickness d of 15 nm to 35 nm and an average surface roughness Ra of 0.37 nm to 1 nm; and at least a single layer of an undercoat layer interposed between the transparent film substrate and the transparent conductor layer.

Abstract: A maintenance method for a sputtering device includes the steps of: moving a cathode carriage to take a plurality of targets and a plurality of cathodes out of a vacuum chamber; operating a plurality of cathode rotating apparatuses to rotate the targets and the cathodes so as to cause the targets to face upwards; operating a plurality of cathode sliding apparatuses to move the targets and the cathodes located in places at high height to places at low height; removing the targets from the cathodes to attach a plurality of new targets to the cathodes; returning the targets and the cathodes to an original height thereof; returning the targets and the cathodes to original rotation angles; and putting the targets and the cathodes back into the vacuum chamber.

Abstract: The present invention provides a transparent conductive film in which occurrence of scratches during sliding is suppressed even when transparent conductive layer forming surfaces are so arranged as to face each other. Provided is a transparent conductive film comprising a transparent film base; at least one dielectric layer formed on a first main surface of the transparent film base; and a transparent conductive layer formed on the dielectric layer, wherein the transparent conductive layer is patterned; and the surface on the first main surface of the transparent conductive film has an arithmetical mean roughness Ra of 22 nm or more, and has 140/mm2 or more of protrusions having heights of 250 nm or higher at a pattern-opening part in which the transparent conductive layer is not formed.

Abstract: Provided is a transparent conductive film that can drastically improving an electrical characteristic of a transparent conductive layer after crystallizing process with resped to the transparent conductive layer before the crystallizing process and can achieve a lower resistivity. The transparent conductive film (1) is provided with a film substrate (2) and a crystalline transparent conductive layer (3) formed on one of the main surfaces (2a) of the said substrate. The amorphous transparent conductive layer before the crystallizing process has a carrier density na×1019 of (10 to 60)×1019/cm3 and Hall mobility ?a of 10 to 25 cm2/V·s, the crystalline transparent conductive layer after the crystallizing process has a carrier density nc×1019 of (80 to 150)×1019/cm3 and Hall mobility t of 20 to 40 cm2/V·s, and the length of motion L defined by {(nc?na)2+(?c??a)2}1/2 is 50 to 150.

Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the fed substrate; forming a first material film on the first surface of the degassed substrate in a first film formation chamber; forming a second material film on the first material film in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the material films formed thereon; unrolling and feeding the taken up substrate from the first roll chamber in the direction, using a second surface opposite the first surface of the substrate as a surface for film formation; and repeating all the above treatments.

Abstract: There is provided a transparent conductive film which comprises: a film substrate; a plurality of transparent conductor patterns formed on the film substrate; and a pressure-sensitive adhesive layer wherein the transparent conductor patterns are embedded. The plurality of transparent conductor patterns respectively have a two-layer structure wherein a first indium tin oxide layer and a second indium tin oxide layer are laminated on the film substrate in this order, and the first indium tin oxide layer has a greater tin oxide content than the second indium tin oxide layer does. The first indium tin oxide layer has a smaller thickness than the second indium tin oxide layer does.

Abstract: The present invention relates to a transparent conductive film which is excellent in dotting property under a heavy load and excellent in bending resistance. Provided is a transparent conductive film, comprising a flexible transparent base; and a transparent conductive layer formed on the flexible transparent base and including a crystalline indium/tin composite oxide, wherein a compressive residual stress of the transparent conductive layer is 0.4 to 2 GPa.

Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the fed substrate; forming a first material film on the first surface of the degassed substrate in a first film formation chamber; forming a second material film on the first material film in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the material films formed thereon; unrolling and feeding the taken up substrate from the first roll chamber in the direction, using a second surface opposite the first surface of the substrate as a surface for film formation; and repeating all the above treatments.

Abstract: A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.

Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the substrate fed in the first direction; forming a second material film on the first surface of the substrate in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the second material film formed thereon; unrolling and feeding the substrate from the second roll chamber in a second direction from the second roll chamber toward the first roll chamber; forming a first material film on the second material film in a first film formation chamber; taking up the substrate in a roll form in the first roll chamber.

Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the fed substrate; forming a first material film on a first surface in a first film formation chamber; guiding the substrate having the first material film formed thereon to a second film formation chamber in a second direction from the second roll chamber toward the first roll chamber; forming, in the second film formation chamber, a second material film on a second surface opposite the first surface of the substrate when it is being guided in the second direction; taking up, in a third roll chamber provided between the first roll chamber and the second roll chamber, the substrate in a roll state.

Abstract: Provided is an optical unit for a display panel device with a capacitive touch input function. In the optical unit, a touch panel laminate comprises: an optically transparent first substrate layer laminated to one surface of a transparent adhesive layer; a first transparent electrically conductive layer laminated, through a first undercoat layer, to a surface of the first substrate layer on a side opposite to the adhesive layer; an optically transparent second substrate layer laminated to the other surface of the adhesive layer; and a second transparent electrically conductive layer laminated, through a second undercoat layer, to a surface of the second substrate layer on a side opposite side to the adhesive layer.

Abstract: A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and further comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.

Abstract: A capacitive touch sensor laminate for use in a display panel device includes: a dielectric central substrate structure made of a transparent resin material and formed to have flat surfaces, respectively, on opposite sides thereof; a at least one-layer structured coat layer made of a transparent material, formed on each of the flat surfaces, and including at least one refractive index adjusting layer for suppressing visibility of an electrode pattern formed by the transparent electrically conductive layer; and a transparent electrically conductive layer formed on and in adjacent relation to the coat layer. The at least one-layer structured coat layers formed on respective ones of the flat surfaces are configured such that thicknesses of corresponding layers therein on respective opposite sides of the dielectric central substrate structure are set to allow the corresponding layers to become mutually symmetrical across the dielectric central substrate structure.

Abstract: A transparent conductive film comprises: a film substrate having two main surfaces; and a transparent conductor layer formed on one main surface of the film substrate. The transparent conductor layer is composed of three layers in which a first indium tin oxide layer, a second indium tin oxide layer, and a third indium tin oxide layer are laminated in this order from the film substrate side. The first indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has. The third indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has.

Abstract: A display panel device has a window, a touch panel laminate and a display panel. The touch panel laminate has: a transparent first substrate layer; a first transparent conductive layer laminated to the first substrate layer through a first undercoat layer; a transparent second substrate layer; and a second transparent conductive layer laminated to the second substrate layer through a second undercoat layer. The second conductive layer faces the first conductive layer through at least the first substrate layer and the first undercoat layer. The first conductive layer is closer to the window than the first substrate layer. A polarizing film layer is bonded to the window, and a ?/4 retardation film layer is disposed between the polarizing film layer and the touch panel laminate. The display panel is disposed on a side opposite to the window with respect to the touch panel laminate.

Abstract: A method for manufacturing a transparent conductive film that can reduce a heating time of crystallizing an amorphous layer containing an indium-based complex oxide is provided. The method for manufacturing a transparent conductive film according to the present invention includes a first step of laminating an amorphous layer formed of an indium-based complex oxide on a first side of a film base material having a thickness of 10 to 50 ?m, a second step of forming a transparent conductive layer by heating the film base material on which the amorphous layer is laminated to 160° C. or above to crystallize the amorphous layer during a process of conveying the film base material from a feed roller and taking up the film base material on a take-up roller, and a third step of forming an adhesive layer on a second side of the film base material.

Abstract: A transparent conductive film includes a film base and a polycrystalline layer of indium tin oxide formed on the film base. The polycrystalline layer has a thickness of 10 nm to 30 nm, an average value of gain size of 180 nm to 270 nm, and a carrier density of greater than 6×1020/cm3 and less than or equal to 9×1020/cm3.